Datasheet ntd6414an Datasheet

NTD6414AN

N-Channel Power MOSFET 100 V, 32 A, 37 mW

Features

• Low R

• High Current Capability

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Continuous Drain Current R

Power Dissipation R

Pulsed Drain Current

Operating and Storage Temperature Range TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (V I

L(pk)

Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds

THERMAL RESISTANCE RATINGS

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

DS(on)

Compliant

= 25°C unless otherwise noted)

J

Parameter

Steady

q

JC

q

JC

= 50 Vdc, VGS = 10 Vdc,

DD

= 32 A, L = 0.3 mH, RG = 25 W)

(Cu Area 1.127 sq in [1 oz] including traces).

State

Steady

State

Parameter Symbol Max Unit

TC = 25°C

TC = 100°C 22

TC = 25°C P

tp = 10 ms

Symbol Value Unit

stg

100 V

$20 V

32

100 W

117 A

−55 to +175

32 A

154 mJ

260 °C

1.5

37

A

°C

°C/W

R

I

E

DSS

GS

I

D

DM

S

AS

T

L

q

JC

q

JA

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V

(BR)DSS

100 V 37 mW @ 10 V 32 A

2

1

DPAK

CASE 369AA

STYLE 2

R

MAX

DS(on)

N−Channel

D

G

S

4

1

3

2

IPAK

CASE 369D

STYLE 2

MARKING DIAGRAM

& PIN ASSIGNMENTS

4 Drain

YWW6414ANG

1

Gate

Drain

6414AN = Device Code Y = Year WW = Work Week G = Pb−Free Package

3

2

Source

Gate

4 Drain

YWW6414ANG

1

Drain

ID MAX

(Note 1)

4

3

3 Source

2

November, 2009 − Rev. 0

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NTD6414AN/D

NTD6414AN

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

(BR)DSS/TJ

VGS = 0 V, ID = 250 mA

100 V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

DSS

GSS

VGS = 0 V,

VDS = 100 V

VDS = 0 V, VGS = "20 V "100 nA

TJ = 25°C 1.0

TJ = 125°C 100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature

V

GS(TH)

V

GS(TH)/TJ

VGS = VDS, ID = 250 mA

2.0 4.0 V

Coefficient

Drain−to−Source On−Resistance R

DS(on)

VGS = 10 V, ID = 32 A 30 37

Forward Transconductance gFS VGS = 5.0 V, ID = 10 A 18

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

GP

G

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

VGS = 10 V, VDS = 80 V, ID = 32 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 10 V, VDD = 80 V,

= 32 A, RG = 6.1 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V, IS = 32 A

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 32 A

S

TJ = 25°C 0.87 1.2

TJ = 125°C 0.76

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

107 mV/°C

mA

8.3 mV/°C

mW

S

1450

pF

230

95

40

nC

1.7

8.0

20

5.9 V

1.9

11

W

ns

52

38

48

V

68

ns

51

16

195 nC

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2

NTD6414AN

TYPICAL CHARACTERISTICS

70

TJ = 25°C

60

50

10 V

7.5 V

6.5 V

6.0 V

40

30

20

, DRAIN CURRENT (A)

D

I

10

5.5 V

5.0 V

4.5 V

0

012345

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

0.07 ID = 32 A

T

= 25°C

0.06

0.05

J

70

VDS w 10 V

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

TJ = 125°C

TJ = 25°C

10

0

TJ = −55°C

2345678

V

, GATE−TO−SOURCE VOLTAGE (V)

GS

Figure 2. Transfer Characteristics

0.10 VGS = 10 V

0.08

0.06

TJ = 175°C

TJ = 125°C

0.04

0.03

, DRAIN−TO−SOURCE RESISTANCE (W)

0.02 5678910

DS(on)

R

, GATE−TO−SOURCE VOLTAGE (V)

V

GS

Figure 3. On−Region versus Gate Voltage

3

ID = 32 A

V

= 10 V

GS

2.5

2

1.5

(NORMALIZED)

1

, DRAIN−TO−SOURCE RESISTANCE

0.5

−50 −25 0 25 50 75 100 125 150 175

DS(on)

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

0.04 TJ = 25°C

0.02

, DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

0.00

10 3515

DS(on)

R

20 25 30

I

, DRAIN CURRENT (A)

D

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10000

, LEAKAGE (nA)

DSS

I

VGS = 0 V

TJ = 150°C

1000

100

TJ = 125°C

10

10 20 30 40 50 60 70 80 90 100

, DRAIN−TO−SOURCE VOLTAGE (V)

V

DS

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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NTD6414AN

TYPICAL CHARACTERISTICS

2800

2400

TJ = 25°C V

= 0 V

GS

2000

1600

C

iss

1200

800

C, CAPACITANCE (pF)

400

C

rss

0

C

oss

0 20406080100

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 7. Capacitance Variation

1000

VDS = 80 V

I

= 32 A

D

= 10 V

V

GS

100

t, TIME (ns)

10

t

f

t

d(off)

t

r

t

d(on)

10

8

V

DS

Q

gs

6

Q

T

V

GS

Q

gd

4

2

, GATE−TO−SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20

25 30 35 40

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

35

TJ = 25°C

30

V

= 0 V

GS

25

20

15

10

, SOURCE CURRENT (A)

S

I

5

ID = 32 A

T

= 25°C

J

100

80

60

40

20

0

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

V

1

1 10 100

, GATE RESISTANCE (W)

R

G

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

100

10 ms

10

100 ms

1 ms

VGS = 10 V SINGLE PULSE

1

, DRAIN CURRENT (A)

D

I

TC = 25°C

R

DS(on)

LIMIT

10 ms

dc

THERMAL LIMIT

0.1

PACKAGE LIMIT

1 10 100 1000

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0

0.5 0.6 0.7 0.8 0.90.4

V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Diode Forward Voltage versus

Current

160

140

ID = 32 A

120

100

80

60

40

AVALANCHE ENERGY (mJ)

20

0

25 50 75 100 125 150 175

TJ, STARTING JUNCTION TEMPERATURE

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

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NTD6414AN

TYPICAL CHARACTERISTICS

10

1

D = 0.5

0.2

0.1

0.05

0.02

R(t) (°C/W)

0.01

0.01 SINGLE PULSE

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (s)

Figure 13. Thermal Response

ORDERING INFORMATION

Device Package Shipping†

NTD6414ANT4G DPAK

(Pb−Free)

NTD6414AN−1G IPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

2500 / Tape & Reel

75 Units / Rail

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NTD6414AN

PACKAGE DIMENSIONS

DPAK

CASE 369AA−01

ISSUE A

NOTES:

SEATING

−T−

PLANE

B

V

S

R

4

123

A

H

C

E

Z

U

F

J

L

D

2 PL

0.13 (0.005) T

M

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.025 0.035 0.63 0.89 E 0.018 0.024 0.46 0.61

F 0.030 0.045 0.77 1.14

H 0.386 0.410 9.80 10.40

J 0.018 0.023 0.46 0.58

L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.024 0.040 0.60 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

2.58

0.101

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

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NTD6414AN

PACKAGE DIMENSIONS

DPAK

CASE 369D−01

ISSUE B

V

S

−T−

SEATING PLANE

F

B

R

4

123

G

A

K

3 PL

D

0.13 (0.005) T

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58

F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD6414AN/D

7