Datasheet ntd60n02r Datasheet

NTD60N02R

d)

4

Power MOSFET

62 A, 25 V, N−Channel, DPAK

Features

• Planar HD3e Process for Fast Switching Performance

• Low R

• Low C

• Low Gate Charge

• Optimized for High Side Switching Requirements in

High−Efficiency DC−DC Converters

• Pb−Free Packages are Available

to Minimize Conduction Loss

DS(on)

to Minimize Driver Loss

iss

(BR)DSS

25 V

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R

TYP

DS(on)

8.4 mW @ 10 V

N−Channel

D

ID MAXV

62 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Thermal Resistance

Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current

Continuous @ T

Continuous @ T Thermal Resistance

Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C

Thermal Resistance

Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C

Operating and Storage Temperature TJ, and

Single Pulse Drain−to−Source Avalanche Energy

− Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10.0 Vdc, IL = 11 Apk, L = 1.0 mH, RG = 25 W)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.

2. When surface mounted to an FR4 board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

JC D

JA D

L

25 Vdc

±20 Vdc

2.6 58

62 50 32

80

1.87

10.5

120

1.25

8.5

− 55 to 175

60 mJ

260 °C

= 25°C, Chip

C

= 25°C, Limited by Package

C

= 25°C, Limited by Wires

A

R

DSS

P

I I I

P

I

P

I

T E

T

GS

q

D D D

q

D

q

D

stg

AS

°C/W

W

A A A

C/W

W

A

°C/W

W

A

°C

G

4

2

1

3

CASE 369AA

DPAK

(Surface Mount)

STYLE 2

MARKING DIAGRAM

& PIN ASSIGNMENTS

4

Drain

T60

YWW

2

1

Drain

Gate

Y = Year WW = Work Week T60N02R = Device Code G = Pb−Free Package

1

CASE 369AC

3 IPAK

(Straight Lead)

N02RG

3 Source

S

4

2

3

Gate

1

2

CASE 369D

DPAK

(Straight Lea

STYLE 2

4

Drain

T60

YWW

N02RG

1

2

Drain

3 Source

3

December, 2006 − Rev. 12

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NTD60N02R/D

NTD60N02R

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V

= 0 Vdc, ID = 250 mAdc)

GS

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 3)

(VGS = 4.5 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 31 Adc)

Forward Transconductance (VDS = 10 Vdc, ID = 15 Adc) (Note 3) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance C

(VDS = 20 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t

(VGS = 10 Vdc, VDD = 10 Vdc,

ID = 31 Adc, RG = 3.0 W)

Fall Time t Gate Charge

(VGS = 4.5 Vdc, ID = 31 Adc,

VDS = 10 Vdc) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(IS = 31 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(IS = 31 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3)

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C

t

d(on)

d(off)

Q Q Q

V

t t t

FS

iss

oss

rss

GS GD

SD

rr

a b

25

−

27.5

25.5

−

mV/°C

mAdc

Vdc

−

1.5 10

− − ±100 nAdc

Vdc

1.0

−

1.5

4.1

2.0

−

mV/°C

mW

−

11.2

8.4

8.2

12.5

10.5

−

− 27 − Mhos

− 1000 1330

pF

− 480 640

− 180 225

− 7.0 −

r

− 33 −

ns

− 19 −

f T

− 9.0 −

− 9.5 14

nC

− 2.2 −

− 5.0 −

−

− 29.1 −

0.88

1.15

0.80

1.2

−

Vdc

− ns

− 13.6 −

− 15.5 −

rr

− 0.02 −

mC

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2

NTD60N02R

4

I

, DRAIN CURRENT (A)

R

, DRAIN−TO−SOURCE RESISTANCE (

)

R

, DRAIN−TO−SOURCE RESISTANCE

8

0

TYPICAL CHARACTERISTICS

140

120

100

80

60

40

D

20

0

W

0.05

0.04

0.03

VGS = 10 V

8.0 V

6.0 V

4.2 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V2.8 V

0246810

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

5.0 V

4.5 V

2.6 V

2.4 V

120

100

, DRAIN CURRENT (A)

D

I

Figure 1. On−Region Characteristics

0.05

ID = 62 A TJ = 25°C

0.04

0.03

VDS w 10 V

80

60

40

TJ = 175°C

20

0

0246

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = −55°C

Figure 2. Transfer Characteristics

TJ = 25°C

0.02

0.01

0

DS(on)

2

46

VGS, GATE−TO−SOURCE VOLTAGE (V)

810

Figure 3. On−Resistance versus

2.0 ID = 31 A

VGS = 10 V

1.8

1.6

1.4

1.2

(NORMALIZED)

1.0

0.8

DS(on)

0.6

−50 −25 0 25 50 75 100 125 150

Gate−to−Source Voltage

TJ, JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

100000

10000

, LEAKAGE (nA)

DSS

I

175

0.02

0.01

0

20 40 60 80 100 120

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 10 V

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 175°C

1000

100

10

0 6 12 18 2

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 100°C

14

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

versus Voltage

3

NTD60N02R

C, CAPACITANCE (pF)

t, TIME (ns)

V , DRAIN−TO−SOURCE VOLTAGE (V)

.8

2000

C

iss

TJ = 25°C

1500

C

iss

VDS = 0 V

VGS = 0 V

1000

C

rss

C

oss

500

C

rss

0

10 5 0 5 10 15 20

V

GSVDS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 10 V ID = 31 A VGS = 10 V

100

10

t

d(off)

t

d(on)

t

r

t

f

5

Q

T

4

Q

GS

Q

DS

3

V

DS

V

GS

2

1

, GATE−TO−SOURCE VOLTAGE (V)

GS

V

0

04610

28

ID = 31 A

TJ = 25°C

20

16

12

8

4

0

DS

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

80

VGS = 0 V

70

TJ = 25°C

60 50 40 30 20

, SOURCE CURRENT (A)

S

I

10

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

100

VGS = 20 V

SINGLE PULSE

TC = 25°C

10

, DRAIN CURRENT (A)

D

I

R

DS(ON)

LIMIT

THERMAL LIMIT

1

PACKAGE LIMIT

0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased Safe Operating Area

0

0.2 0.4 0.6 0.8 1.0 1.2

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

10 ms

100 ms

1 ms

10 ms

dc

1.4 1.6 1

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4

NTD60N02R

1.0 D = 0.5

0.2

0.1

0.05

0.1

0.02

(NORMALIZED)

0.01

SINGLE PULSE

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

Figure 12. Thermal Response

ORDERING INFORMATION

Order Number Package Shipping

NTD60N02R DPAK−3 75 Units / Rail NTD60N02RG DPAK−3

NTD60N02RT4 DPAK−3 2500 / Tape & Reel NTD60N02RT4G DPAK−3

NTD60N02R−1 DPAK−3 Straight Lead 75 Units / Rail NTD60N02R−1G DPAK−3 Straight Lead

NTD60N02R−35 DPAK−3 Straight Lead

NTD60N02R−35G DPAK−3 Straight Lead

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

(3.5 ± 0.15 mm)

P

t, TIME (s)

(Pb−Free)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

R

(t) = r(t) R

q

JC

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

2

(pk)

1

R

(t)

q

JC

1100.10.010.0010.00010.00001

†

75 Units / Rail

2500 / Tape & Reel

75 Units / Rail

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NTD60N02R

PACKAGE DIMENSIONS

DPAK

CASE 369AA−01

ISSUE A

NOTES:

SEATING

−T−

PLANE

B

V

S

R

4

123

A

H

C

E

Z

U

F

J

L

D

2 PL

0.13 (0.005) T

M

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.025 0.035 0.63 0.89 E 0.018 0.024 0.46 0.61 F 0.030 0.045 0.77 1.14 H 0.386 0.410 9.80 10.40 J 0.018 0.023 0.46 0.58 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.024 0.040 0.60 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

2.58

0.101

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

mm

ǒ

inches

Ǔ

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6

SEATING PLANE

NTD60N02R

PACKAGE DIMENSIONS

3 IPAK, STRAIGHT LEAD

CASE 369AC−01

ISSUE O

NOTES:

1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

B

V

R

C

E

A

W

F

G

K

J

H

D

3 PL

0.13 (0.005) W

2.. CONTROLLING DIMENSION: INCH.

3. SEATING PLANE IS ON TOP OF DAMBAR POSITION.

4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.043 0.94 1.09

G 0.090 BSC 2.29 BSC

H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.134 0.142 3.40 3.60 R 0.180 0.215 4.57 5.46 V 0.035 0.050 0.89 1.27

W 0.000 0.010 0.000 0.25

MILLIMETERSINCHES

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7

NTD60N02R

PACKAGE DIMENSIONS

DPAK

CASE 369D−01

ISSUE B

V

S

−T−

SEATING PLANE

F

B R

4

123

G

A

K

D 3 PL

0.13 (0.005) T

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88

E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45

S 0.025 0.040 0.63 1.01

V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD60N02R/D

8