Datasheet ntd5865nl Datasheet

NTD5865NL

N--Channel Power MOSFET
60 V, 40 A, 16 mΩ

Features

 Low Gate Charge
 Fast Switching
 High Current Capability
 100% Avalanche Tested
 These Devices are Pb--Free, Halogen Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain--to--Source Voltage V

Gate--to--Source Voltage -- Continuous V

Gate--to--Source Voltage

-- Non--Repetitive (t

Continuous Drain
Current (R

Power Dissipation
(R

θ

JC

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,T

Source Current (Body Diode) I

Single Pulse Drain--to--Source
Avalanche Energy

Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

)

θ

JC

)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction--to--Case (Drain)

Junction--to--Ambient -- Steady State (Note 1)

1. Surface--mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.

=25C unless otherwise noted)

J

<10ms)

p

TC=25C

Steady

State

TC= 100C 26

TC=25C P

tp=10ms

(L =

0.1 m H)

Symbol Value Unit

DSS

GS

V

GS

I

D

D

I

DM

stg

S

E

AS

I

AS

T

L

R

θ

JC

R

θ

JA

60 V

20 V

30 V

40

52 W

137 A

-- 5 5 t o
150

40 A

36 mJ

27 A

260 C

2.4

42

A

C

C/W

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(BR)DSS

60 V

G

N--CHANNEL MOSFET

2

1

3

DPAK

CASE 369AA

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENT

4

Drain

YWW5865NLG

R

MAX IDMAXV

DS(on)

16 m Ω @10V

19 m Ω @4.5V

D

S

4

(Straight Lead)

40 A

1

2

3

IPAK

CASE 369D

STYLE 2

4

Drain

YWW5865NLG

4

 Semiconductor Components Industries, LLC, 2010

June, 2010 -- Rev. 1

2

Drain

1

Gate

3

Source

Y = Year
WW = Work Week
5865NL = Device Code
G = Pb-- Free Package

Gate

1

Drain

2

3

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

1 Publication Order Number:

NTD5865NL/D

NTD5865NL

ELECTRICAL CHARACTERISTICS (T

Parameter

=25C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage

Drain--to--Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate--to--Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS=0V,ID= 250 mA

60 V

55 mV/C

VGS=0V,

=60V

V

DS

TJ=25C 1.0

TJ= 150C 100

VDS=0V,VGS= 20 V 100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain--to--Source On Resistance R

Drain--to--Source on Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

DS(on)

VGS=VDS,ID= 250 mA

1.0 2.0 V

5.6 mV/C

VGS=10V,ID=20A 13 16

VGS=4.5V,ID=20A 16 19

Forward Transconductance gFS VDS=15V,ID=20A 15 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate--to--Source Charge Q

Gate--to--Drain Charge Q

Total Gate Charge Q

Gate Resistance R

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

G

VGS=0V,f=1.0MHz,

=25V

V

DS

VGS=10V,VDS=48V,

=40A

I

D

VGS=4.5V,VDS=48V,

=40A

I

D

1400

137

95

29

1.1

4

8

15 nC

1.3

SWITCHING CHARACTERISTICS (Note 3)

Turn--On Delay Time

Rise Time t

Turn--Off Delay Time t

Fall Time t

t

d(on)

d(off)

8.4

r

f

VGS=10V,VDD=48V,

I

=40A,RG=2.5Ω

D

12.4

26

4.4

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time ta 13

Discharge Time tb 7

Reverse Recovery Charge Q

V

SD

RR

VGS=0V,

=40A

I

S

VGS= 0 V, dIs/dt = 100 A/ms,

I

S

RR

TJ=25C 0.95 1.2

TJ= 125C 0.85

20

=40A

13 nC

2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.

3. Switching characteristics are independent of operating junction temperatures.

mA

mΩ

mΩ

pF

nC

Ω

ns

V

ns

ORDERING INFORMATION

Order Number Package Shipping

NTD5865NL--1G IPAK (Straight Lead)

75 Units / Rail

(Pb--Free)

NTD5865NLT4G DPAK

2500 / Tape & Reel

(Pb--Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

NTD5865NL

TYPICAL CHARACTERISTICS

80

VGS=10V

70

4.5 V

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

012345

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

4V

3.8 V

3.6 V

3.4 V

3.2 V

3V

2.8 V

2.6 V

TJ=25C

Figure 1. On --Region Characteristics

0.030

ID=40A

0.025

0.020

TJ=25C

80

VDS 10 V

70

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

12345

TJ=25C

TJ= 125C

VGS, GATE--TO--SOURCE VOLTAGE (V)

TJ=--55C

Figure 2. Transfer Characteristics

0.018
TJ=25C

0.016

0.014

VGS=4.5V

0.015

, DRAIN--TO--SOURCE RESISTANCE (Ω)

0.010
2345678910

DS(on)

R

VGS, GATE--TO--SOURCE VOLTAGE (V)

Figure 3. On--Resistance vs. Gate Voltage

2.0

ID=40A

1.8

VGS=10V

1.6

1.4

1.2

1.0

0.8

0.6

--50 --25 0 25 50 75 100 125 150

, DRAIN--TO--SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

TJ, J UNCTION TEMPERATURE (C)

Figure 5. On --Resistance Variation with

Temperature

VGS=10V

0.012

, DRAIN--TO--SOURCE RESISTANCE (Ω)

0.010

DS(on)

5 10152025303540

R

ID, DRAIN CURRENT (A)

Figure 4. On--Resistance vs. Drain Current

10000

VGS=0V

TJ= 150C

1000

, LEAKAGE (mA)

DSS

I

100

10 20 30 40 50 60

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

TJ= 125C

Figure 6. Drain--to--Source Leakage Current

vs. Voltage

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3

NTD5865NL

TYPICAL CHARACTERISTICS

1800

1600

1400

C

iss

VGS=0V

TJ=25C

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

C

rss

0

C

oss

0 102030405060

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD=48V
I

=40A

D

V

=10V

GS

100

t

d(off)

10

Q

T

8

6

Q

4

gs

2

, GATE--TO--SOURCE VOLTAGE (V)

0

GS

V

0 5 10 15 20 25 30

Q

gd

VDS=48V
I

D

T

J

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate-- to--Source vs. Total Charge

40

VGS=0V

35

TJ=25C

30

25

20

=40A

=25C

t

t, TIME (ns)

10

r

t

f

t

d(on)

1

1 10 100

RG, G ATE RESISTANCE (Ω)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

VGS=10V
SINGLE PULSE
T

100

=25C

C

10 ms

100 ms

1ms

10 ms

10

dc

1

, DRAIN CURRENT (A)

D

I

R

DS(on)

LIMIT
THERMAL LIMIT
PACKAGE LIMIT

0.1

0.1 1 10 100

V

, DRAIN--TO--SOURCE VOLTAGE (V)

DS

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

15

10

, S OURCE CURRENT (A)

S

I

5

0

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

VSD, SOURCE --TO--DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

40

35

ID=27A

30

25

20

15

10

AVALANCHE ENERGY (mJ)

5

0

25 50 75 100 125 150

TJ, S TARTING JUNCTION TEMPERATURE

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

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4

NTD5865NL

TYPICAL CHARACTERISTICS

10

Duty Cycle = 0.5

1

0.1

THERMAL RESISTANCE

(C/W) EFFECTIVE TRANSIENT

0.01

JC(t)

θ

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

R

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

t, PULSE TIME (s)

Figure 13. Thermal Response

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5

NTD5865NL

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA--01

ISSUE A

NOTES:

SEATING

-- T --

PLANE

B

V

S

R

4

123

A

H

C

E

Z

U

F

J

L

D

2PL

0.13 (0.005) T

M

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.025 0.035 0.63 0.89
E 0.018 0.024 0.46 0.61
F 0.030 0.045 0.77 1.14
H 0.386 0.410 9.80 10.40
J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
U 0 . 0 2 0 -- -- -- 0 . 5 1 -- -- --
V 0.035 0.050 0.89 1.27
Z 0 . 1 5 5 -- -- -- 3 . 9 3 -- -- --

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

6.20

0.244

2.58

3.0

0.118

0.101

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243



inches

mm



*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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6

NTD5865NL

l

PACKAGE DIMENSIONS

IPAK

CASE 369D--01

ISSUE B

V

S

-- T --

SEATING
PLANE

F

B

R

4

123

G

A

K

3PL

D

0.13 (0.005) T

C

E

J

H

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G
H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 ------ 3.93 ------

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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NTD5865NL/D

7