Datasheet ntd5865n-d Datasheet

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NTD5865N

N-Channel Power MOSFET 60 V, 38 A, 18 mW

Features

• Low Gate Charge

• Fast Switching

• High Current Capability

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Gate−to−Source Voltage

− Non−Repetitive (t

Continuous Drain Current (R

Power Dissipation (R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient − Steady State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces.

= 25°C unless otherwise noted)

< 10 ms)

TC = 25°C

Steady

State

TC = 100°C 24

TC = 25°C P

= 10 ms

L = 0.1 mH

Symbol Value Unit

DSS

stg

60 V

"20 V

"30 V

52 W

137 A

−55 to 150

38 A

36 mJ

27 A

260 °C

2.4

°C

°C/W

http://onsemi.com

(BR)DSS

60 V

DPAK

CASE 369C

(Surface Mount)

STYLE 2

DS(on)

18 mW @ 10 V

N−CHANNEL MOSFET

MARKING DIAGRAMS

& PIN ASSIGNMENT

Drain

YWW5865NG

Drain

Gate

Source

Y = Year WW = Work Week 5865N = Device Code G = Pb−Free Package

MAX ID MAXV

38 A

IPAK

CASE 369D

(Straight Lead)

STYLE 2

Drain

YWW5865NG

Drain

Gate

Source

May, 2010 − Rev. 0

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

1 Publication Order Number:

NTD5865N/D

Page 2

NTD5865N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 60 V

TJ = 25°C 1.0 mA

TJ = 150°C 100

VDS = 0 V, VGS = ±20 V ±100 nA

60 V

59.2 mV/°C

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 20 A 14 18

2.0 4.0 V

8.6 mV/°C

Forward Transconductance gFS VDS = 15 V, ID = 20 A 6.9 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Gate Resistance R

iss

oss

rss

G(TH)

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

VGS = 10 V, VDS = 48 V,

= 38 A

1261

136

1.5

6.7

7.7

1.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 10 V, VDD = 48 V,

= 38 A, R

= 2.5 W

3.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time ta 17

Discharge Time tb 6

Reverse Recovery Charge Q

VGS = 0 V,

= 38 A

VGS = 0 V, dIs/dt = 100 A/ms,

= 38 A

TJ = 25°C 0.94 1.2

TJ = 125°C 0.85

20 nC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Order Number Package Shipping

NTD5865N−1G DPAK (Straight Lead)

75 Units / Rail

(Pb−Free)

NTD5865NT4G DPAK

2500 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 3

NTD5865N

VGS = 10 V

, DRAIN CURRENT (A)

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

6 V

5.5 V

5.0 V

4.5 V

Figure 1. On−Region Characteristics

0.040

0.035

0.030

0.025

ID = 38 A

TJ = 25°C

VDS ≥ 10 V

, DRAIN CURRENT (A)

234567

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = 125°C

TJ = −55°C

Figure 2. Transfer Characteristics

0.018

VGS = 10 V

0.016

0.014

TJ = 25°C

0.020

0.015

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010 45678910

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate Voltage

2.2

ID = 38 A

2.0 VGS = 10 V

1.8

1.6

1.4

1.2

1.0

0.8

0.6

−50 −25 0 25 50 75 100 125 150

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.012

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010 5 10152025303540

DS(on)

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (mA)

DSS

100

10 20 30 40 50 60

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NTD5865N

1600

1400

iss

VGS = 0 V

TJ = 25°C

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

rss

oss

0 102030405060

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 48 V I

= 38 A

= 10 V

100

, GATE−TO−SOURCE VOLTAGE (V)

0 5 10 15 20 25

VDS = 48 V I

= 38 A

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source vs. Total Charge

VGS = 0 V

TJ = 25°C

= 25°C

d(off)

t, TIME (ns)

d(on)

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

VGS = 10 V SINGLE PULSE TC = 25°C

100

10 ms

1 ms

100 ms

, DRAIN CURRENT (A)

DS(on)

LIMIT

THERMAL LIMIT

0.1

PACKAGE LIMIT

0.1 1 10 100

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

, SOURCE CURRENT (A)

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

ID = 27 A

AVALANCHE ENERGY (mJ)

25 50 75 100 125 150

TJ, STARTING JUNCTION TEMPERATURE

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

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Page 5

NTD5865N

Duty Cycle = 0.5

0.1

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.01

JC(t)

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

t, PULSE TIME (s)

Figure 13. Thermal Response

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Page 6

NTD5865N

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA−01

ISSUE A

NOTES:

SEATING

−T−

PLANE

123

2 PL

0.13 (0.005) T

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.025 0.035 0.63 0.89 E 0.018 0.024 0.46 0.61 F 0.030 0.045 0.77 1.14 H 0.386 0.410 9.80 10.40 J 0.018 0.023 0.46 0.58 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.024 0.040 0.60 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

6.20

0.244

2.58

3.0

0.118

0.101

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Page 7

NTD5865N

PACKAGE DIMENSIONS

IPAK−3 (SINGLE GAUGE)

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD5865N/D