Datasheet ntd5862n-d Datasheet

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NTD5862N

N-Channel Power MOSFET 60 V, 90 A, 5.7 mW

Features

• Low R

• High Current Capability

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Gate−to−Source Voltage

− Non−Repetitive (tp < 10 ms)

Continuous Drain Current (R

Power Dissipation (R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Case (Drain)

Junction−to−Ambient − Steady State (Note 2)

1. Limited by package to 50 A continuous.

2. Surface−mounted on FR4 board using 1 in sq pad size

DS(on)

= 25°C unless otherwise noted)

Parameter Symbol Value Unit

) (Note 1)

)

(Cu area = 1.127 in sq [2 oz] including traces.

Steady

State

Parameter Symbol Value Unit

TC = 25°C

TC = 100°C 57

TC = 25°C P

= 10 ms

DSS

stg

60 V

"20 V

"30 V

96 W

335 A

−55 to 150

90 A

205 mJ

260 °C

1.3

°C

°C/W

http://onsemi.com

(BR)DSS

60 V

DPAK

CASE 369C

(Surface Mount)

STYLE 2

DS(on)

5.7 mW @ 10 V

N−CHANNEL MOSFET

MARKING DIAGRAMS

& PIN ASSIGNMENT

Drain

YWW5862NG

Drain

Gate

Source

Y = Year WW = Work Week 5862N = Device Code G = Pb−Free Package

MAX ID MAXV

90 A

DPAK

CASE 369D

(Straight Lead)

STYLE 2

Drain

YWW5862NG

Drain

Gate

Source

August, 2010 − Rev. 0

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

1 Publication Order Number:

NTD5862N/D

Page 2

NTD5862N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 60 V

TJ = 25°C 1.0 mA

TJ = 150°C 100

VDS = 0 V, VGS = ±20 V ±100 nA

60 V

47 mV/°C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 45 A 4.4 5.7

2.0 4.0 V

−9.7 mV/°C

Forward Transconductance gFS VDS = 15 V, ID = 10 A 18 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

G(TOT)

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Gate Resistance R

iss

oss

rss

G(TH)

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

VGS = 10 V, VDS = 48 V,

ID = 45 A

5050 6000

500 600

300 420

5.2

0.6

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 10 V, VDD = 48 V,

ID = 45 A, R

= 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

VGS = 0 V,

IS = 45 A

Reverse Recovery Time t

Charge Time ta 20

Discharge Time tb 18

Reverse Recovery Charge Q

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 45 A

TJ = 25°C 0.9 1.2

TJ = 100°C 0.75

40 nC

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Order Number Package Shipping

NTD5862N−1G DPAK (Straight Lead)

75 Units / Rail

(Pb−Free)

NTD5862NT4G DPAK

2500 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 3

NTD5862N

TYPICAL CHARACTERISTICS

200

TJ = 25°C

160

120

, DRAIN CURRENT (A)

012345

VGS = 10 V

6.2 V

6.0 V

5.8 V

5.6 V

5.2 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.030 ID = 45 A

0.025

0.020

TJ = 25°C

200

VDS ≥ 5 V

180

160

140

120

100

, DRAIN CURRENT (A)

34567

TJ = 125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = −55°C

Figure 2. Transfer Characteristics

0.006

VGS = 10 V

TJ = 25°C

0.005

0.015

0.010

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

0.000

45678910

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate Voltage

2.0

ID = 45 A

1.8 VGS = 10 V

1.6

1.4

1.2

1.0

0.8

0.004

, DRAIN−TO−SOURCE RESISTANCE (W)

0.003 10 20 30 40 50 60 70 80

DS(on)

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current

100000

VGS = 0 V

TJ = 150°C

10000

, LEAKAGE (nA)

DSS

TJ = 125°C

90 100

0.6

−50 −25 0 25 50 75 100 125 150

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1000

10 20 30 40 50 60

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NTD5862N

TYPICAL CHARACTERISTICS

6000

VGS = 0 V TJ = 25°C

5000

iss

4000

3000

2000

C, CAPACITANCE (pF)

1000

rss

oss

0 102030405060

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 48 V ID = 45 A VGS = 10 V

100

t, TIME (ns)

d(off)

d(on)

, GATE−TO−SOURCE VOLTAGE (V)

01020304050

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source vs. Total Charge

100

VGS = 0 V TJ = 25°C

VDS = 48 V ID = 45 A TJ = 25°C

60 70 80 90

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

10 ms

100

10 ms

1 ms

100 ms

VGS = 10 V SINGLE PULSE TC = 25°C

, DRAIN CURRENT (A)

DS(on)

LIMIT

THERMAL LIMIT

0.1

PACKAGE LIMIT

0.1 1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

, SOURCE CURRENT (A)

0.50 0.60 0.70 0.80 1.000.90 1.10

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

210

180

150

120

AVALANCHE ENERGY (mJ)

25 50 75 100 125 150

TJ, STARTING JUNCTION TEMPERATURE

ID = 37 A

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

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Page 5

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

NTD5862N

TYPICAL CHARACTERISTICS

0.01 SINGLE PULSE

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

0.001

JC(t)

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

0.01

t, PULSE TIME (s)

Figure 13. Thermal Response

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Page 6

12 3

0.005 (0.13) C

DETAIL A

NTD5862N

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.102

3.00

0.118

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

5.80

0.228

1.60

0.063

SCALE 3:1

6.17

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Page 7

NTD5862N

PACKAGE DIMENSIONS

DPAK

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

D 3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD5862N/D