Datasheet ntd5807n-d Datasheet

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Page 1

NTD5807N

Power MOSFET

40 V, 23 A, Single N−Channel, DPAK/IPAK

Features

• Low R

• High Current Capability

• Avalanche Energy Specified

• These are Pb−Free Devices

Applications

• CCFL Backlight

• DC Motor Control

• Class D Amplifier

• Power Supply Secondary Side Synchronous Rectification

DS(on)

(BR)DSS

40 V

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MAX ID MAXV

DS(on)

37 mW @ 4.5 V

31 mW @ 10 V

16 A

23 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Gate−to−Source Voltage

− Non−Repetitive (t

Continuous Drain Current (R (Note 1)

Power Dissipation (R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (V I

= 14 A, L = 0.3 mH, VDS = 40 V)

L(pk)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

)

) (Note 1)

= 50 V, VGS = 10 V, RG = 25 W,

= 25°C unless otherwise noted)

< 10 mS)

TC = 25°C

Steady

State

TC = 100°C 16

TC = 25°C P

= 10 ms

Symbol Value Unit

40 V

"20 V

"30 V

33 W

45 A

−55 to 175

23 A

29.4 mJ

260 °C

°C

DSS

stg

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient − Steady State (Note 1)

1. Surface−mounted on FR4 board using the minimum recommended pad size.

107

4.5

°C/W

N−CHANNEL MOSFET

DPAK

CASE 369AA

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENT

Drain

YWW5807NG

Drain

Gate

Source

Y = Year WW = Work Week 5807N = Device Code G = Pb−Free Package

IPAK

CASE 369D

(Straight Lead

DPAK)

Drain

YWW5807NG

Drain

Gate

Source

March, 2011 − Rev. 3

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NTD5807N/D

Page 2

NTD5807N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 40 V

TJ = 25°C 1.0 mA

TJ = 150°C 100

VDS = 0 V, VGS = ±20 V ±100 nA

40 V

38 mV/°C

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 5.0 A 20 31 mW

1.4 2.5 V

−5.8 mV/°C

VGS = 4.5 V, ID = 4.0 A 29 37

Forward Transconductance gFS VDS = 10 V, ID = 15 A 8.1 S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

iss

oss

rss

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz,

= 25 V

VGS = 10 V, VDS = 20 V,

= 5.0 A

603

12.6 20

0.76

2.2

3.1

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

d(on)

d(off)

VGS = 4.5 V, VDD = 20 V,

= 30 A, R

= 2.5 W

VGS = 10 V, VDD = 20 V,

= 30 A, R

= 2.5 W

11.2

111

11.2

3.2

6.7

20.4

15.6

2.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time ta 10.75

Discharge Time tb 5.0

Reverse Recovery Charge Q

VGS = 0 V,

= 10 A

TJ = 25°C 0.91 1.2

TJ = 150°C 0.76

15.7

VGS = 0 V, dIs/dt = 100 A/ms,

= 30 A

6.1 nC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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Page 3

NTD5807N

TYPICAL PERFORMANCE CHARACTERISTICS

10 V

, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.025

VGS = 10 V

0.023

0.021

0.019

0.017

, DRAIN−TO−SOURCE RESISTANCE (W)

0.015

DS(on)

Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and

VGS = 5 V

TJ = 25°C

ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)

TJ = 25°C

4.5 V

4.2 V

4.0 V

3.8 V

3.4 V

3.0 V

6543210

252015105

VDS ≥ 10 V

TJ = 25°C

, DRAIN CURRENT (A)

0.040

0.038

0.036

0.034

0.032

0.030

0.028

0.026

0.024

0.022

0.020

0.018

, DRAIN−TO−SOURCE RESISTANCE (W)

0.016

DS(on)

TJ = 150°C

TJ = 25°C

TJ = −55°C

VGS = 4.5 V

VGS = 10 V

20 40

Gate Voltage

65432

4535302515105

1.8

ID = 5 A

1.7

1.6

VGS = 10 V

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

125 150 175

1007550250−25−50

10,000,000

1,000,000

100,000

10,000

, LEAKAGE (mA)

DSS

1000

100

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VGS = 0 V

TJ = 150°C

TJ = 25°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

423222122

Page 4

TYPICAL PERFORMANCE CHARACTERISTICS

1500

VGS = 0 V

1250

TJ = 25°C

1000

750

500

C, CAPACITANCE (pF)

250

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

iss

rss

oss

VdsVgs

Figure 7. Capacitance Variation

3020 25

NTD5807N

, GATE−TO−SOURCE VOLTAGE (V)

4035151050510

61014

8420

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

ID = 5 A

TJ = 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

VDD = 32 V I

= 30 A

= 10 V

RG, GATE RESISTANCE (W)

vs. Gate Resistance

1000

100

, DRAIN CURRENT (A)

0.1

0.1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

d(on)

d(off)

100101

VGS = 10 V Single Pulse TC = 25°C

Limit

DS(on)

Thermal Limit Package Limit

Safe Operating Area

, SOURCE CURRENT (A)

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

10 ms

100 ms

1 ms

10 ms dc

VGS = 0 V

TJ = 25°C

1.41.21.00.80.60.4

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Page 5

NTD5807N

TYPICAL PERFORMANCE CHARACTERISTICS

D = 0.5

0.2

0.1

(°C/W)

0.05

0.02

0.01

0.1

r(t), Effective Transient Thermal Resistance

0.00001 0.0001 0.001 0.01 0.1 1

Single Pulse

t, PULSE TIME (s)

Figure 12. Thermal Response

ORDERING INFORMATION

Order Number Package Shipping

NTD5807NG IPAK (Straight Lead DPAK)

(Pb−Free)

NTD5807NT4G DPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

75 Units / Rail

2500 / Tape & Reel

†

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Page 6

12 3

0.005 (0.13) C

DETAIL A

NTD5807N

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA−01

ISSUE B

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.102

0.118

3.00

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

SEATING

PLANE

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78

L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC

L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

5.80

0.228

1.60

0.063

SCALE 3:1

6.17

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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Page 7

NTD5807N

PACKAGE DIMENSIONS

IPAK (STRAIGHT LEAD DPAK)

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58

F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD5807N/D