Datasheet ntd5414n Datasheet

NTD5414N

Power MOSFET

24 Amps, 60 Volts Single N−Channel DPAK

Features

• Low R

• High Current Capability

• Avalanche Energy Specified

• These are Pb−Free Devices

Applications

• LED Lighting and LED Backlight Drivers

• DC−DC Converters

• DC Motor Drivers

• Power Supplies Secondary Side Synchronous Rectification

DS(on)

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V

(BR)DSS

60 V 24 A

R

MAX

DS(ON)

37 mW @ 10 V

N−Channel

D

MAX

I

D

(Note 1)

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Gate−to−Source Voltage − Nonrepetitive

< 10 ms)

(T

P

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating and Storage Temperature Range TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy − Starting T (V L = 0.3 mH, R

Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds

(Note 1)

q

JC

= 50 Vdc, V

DD

q

JC

GS

= 25 W)

G

J

= 25°C Unless otherwise specified)

J

Steady

State

Steady

State

= 25°C

= 10 V, I

TC = 25°C

TC = 100°C 16

TC = 25°C P

tp = 10 ms

= 24 A,

L(pk)

Symbol Value Unit

stg

60 V

$20 V

$30 V

24

55 W

75 A

−55 to +175

24 A

86.4 mJ

260 °C

A

°C

V

I

E

DSS

GS

I

D

DM

S

AS

T

L

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain) Steady State (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces).

R

q

JC

R

q

JA

58.6

2.7

°C/W

G

S

MARKING

DIAGRAMS

4

Drain

4

2

1

3

5414N = Device Code Y = Year WW = Work Week G = Pb−Free Device

DPAK

CASE 369AA

STYLE 2

Gate

1

YWW

2

Drain

5414N

3 Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

October, 2008 − Rev. 0

1 Publication Order Number:

NTD5414N/D

NTD5414N

ELECTRICAL CHARACTERISTICS (T

Characteristics

= 25°C Unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−Body Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VDS = 0 V, ID = 250 mA

VGS = 0 V

V

= 60 V

DS

VDS = 0 V, VGS = $20 V $100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On−Voltage V

V

GS(th)

GS(th)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 24 A 0.7 1.16

VGS = 10 V, ID = 12 A, 150°C 0.7

Drain−to−Source On−Resistance R

Forward Transconductance g

DS(on)

FS

VGS = 10 V, ID = 24 A 28.4 37

VDS = 15 V, ID = 20 A 24 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

VDS = 25 V, VGS = 0 V,

f = 1 MHz

VGS = 10 V, VDS = 48 V,

I

= 24 A

D

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

r

d(off)

f

VGS = 10 V, VDD = 48 V,

= 24 A, RG = 9.1 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage (Note 2)

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Stored Charge Q

V

SD

rr

a

b

RR

VGS = 0 V

I

= 24 A

S

IS = 24 Adc, VGS = 0 Vdc,

/dt = 100 A/ms

dI

S

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

60 V

67.3 mV/°C

TJ = 25°C 1.0 mA

TJ = 150°C 50

2.0 3.2 4.0 V

0.74 mV/°C

800 1200

165

75

25 48

1.1

4.8

11.3

12

58

47

69

TJ = 25°C 0.92 1.15

TJ = 125°C 0.8

45.7

31.7

14

76 nC

V

mW

pF

nC

ns

V

ns

ORDERING INFORMATION

Device Package Shipping

NTD5414NT4G DPAK

2500 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

NTD5414N

TYPICAL PERFORMANCE CURVES

40

35

30

7 V

10 V

6 V

TJ = 25°C

5.5 V

25

20

5 V

15

10

, DRAIN CURRENT (A)

D

I

5

0

4.8 V

4.5 V

VGS = 4.2 V

012345

, DRAIN−TO−SOURCE VOLTAGE (V)

V

DS

Figure 1. On−Region Characteristics

0.08

0.07

0.06

0.05

ID = 24 A

T

= 25°C

J

40

VDS ≥ 10 V

35

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

345 62

, GATE−TO−SOURCE VOLTAGE (V)

V

GS

Figure 2. Transfer Characteristics

0.040

TJ = 25°C

0.030

TJ = 125°C

TJ = 25°C

TJ = −55°C

VGS = 10 V

0.04

0.03

, DRAIN−TO−SOURCE RESISTANCE (W)

0.02 567 8 910

DS(on)

R

V

, GATE−TO−SOURCE VOLTAGE (V)

GS

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.5 ID = 24 A V

= 10 V

GS

2.0

1.5

(NORMALIZED)

1.0

, DRAIN−TO−SOURCE RESISTANCE

0.5

DS(on)

R

−50 −25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (°C)

T

J

Figure 5. On−Resistance Variation with

Temperature

0.020

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010

DS(on)

10 20 30 4015 45

R

25 35

I

, DRAIN CURRENT (A)

D

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

, LEAKAGE (nA)

DSS

I

10

51015202530354045505560

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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3

NTD5414N

TYPICAL PERFORMANCE CURVES

1500

TJ = 25°C

1000

VGS = 0 V

C

iss

500

C, CAPACITANCE (pF)

C

rss

0

oss

0 102030405060

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 7. Capacitance Variation

1000

100

t, TIME (ns)

10

V

DD

I

= 24 A

D

V

GS

= 48 V

= 10 V

t

f

t

d(off)

t

r

t

d(on)

10

Q

T

8

Q

1

6

Q

2

4

2

, GATE−TO−SOURCE VOLTAGE (V)

GS

0

V

0 5 10 15 20 25

Q

, TOTAL GATE CHARGE (nC)

g

Figure 8. Gate−to−Source Voltage vs. Total

Charge

25

VGS = 0 V T

= 25°C

J

20

15

10

ID = 24 A T

= 25°C

J

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

0 V ≤ VGS ≤ 10 V Single Pulse TC = 25°C

100

1 ms

100 ms

10 ms

10

, DRAIN CURRENT (A)

1

D

I

R

DS(on)

dc

Limit

Thermal Limit

0.1

0.1 10 100

Package Limit

1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

, SOURCE CURRENT (A)

5

S

I

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0

V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Diode Forward Voltage vs. Current

90

80

ID = 24 A

70

60

50

40

30

20

AVALANCHE ENERGY (mJ)

10

0

25 50 75 100 125 150 175

, STARTING JUNCTION TEMPERATURE (°C)

T

J

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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4

NTD5414N

TYPICAL PERFORMANCE CURVES

100

D = 0.5

0.2

10

0.1

0.05

0.02

1

0.01

0.1

r(t), (°C/W)

0.01

0.001

Single Pulse

Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, PULSE TIME (s)

Figure 13. Thermal Response

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5

NTD5414N

PACKAGE DIMENSIONS

DPAK

CASE 369AA−01

ISSUE A

NOTES:

SEATING

−T−

PLANE

B

V

S

R

4

123

A

H

C

E

Z

U

F

J

L

D

2 PL

0.13 (0.005) T

M

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.025 0.035 0.63 0.89 E 0.018 0.024 0.46 0.61 F 0.030 0.045 0.77 1.14 H 0.386 0.410 9.80 10.40 J 0.018 0.023 0.46 0.58 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.024 0.040 0.60 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2.58

0.101

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

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NTD5414N/D