Datasheet ntd5406n Datasheet

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Page 1

NTD5406N

Power MOSFET

40 V, 70 A, Single N−Channel, DPAK

Features

• Low R

• High Current Capability

• Low Gate Charge

• These are Pb−Free Devices

Applications

• Electronic Brake Systems

• Electronic Power Steering

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current − R

Power Dissipation − R

Continuous Drain Current − R (Note 1)

Power Dissipation − R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) Pulsed I

Single Pulse Drain−to Source Avalanche Energy − (V L = 1 mH, R

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS (Note 1)

Junction−to−Case (Drain) R

Junction−to−Case (Note 1) R

1. Surface mounted on FR4 board using 1 sq in pad size,

DS(on)

= 25°C unless otherwise stated)

Parameter Symbol Value Unit



(Note 1)



= 50 V, VGS = 10 V, IPK = 30 A,

= 25 )

(Cu Area 1.127 sq in [2 oz] including traces).

Steady

State

Steady

State

Steady

State

Steady

State

Parameter

TC = 25°C

TC = 125°C 40

TC = 25°C

TA = 25°C

TA = 125°C 7.0

TA = 25°C P

tp = 10 s

DSS

STG

EAS 450 mJ

Symbol Max Unit

40 V

±20 V

100 W

12.2

3.0 W

150 A

−55 to 175

63.5 A

260 °C

1.5

°C

°C/W

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ID MAX

(BR)DSS

40 V 8.7 mΩ @ 10 V 70 A

DPAK

CASE 369C

STYLE 2

TYP

DS(ON)

N−Channel

Y = Year WW = Work Week 5406N = Specific Device Code G = Pb−Free Device

(Note 1)

MARKING DIAGRAM

YWW

06NG

ORDERING INFORMATION

Device Package Shipping†

NTD5406NG DPAK

(Pb−Free)

NTD5406NT4G DPAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

75 Units / Rail

2500 / Tape & Reel

August, 2010 − Rev. 4

1 Publication Order Number:

NTD5406N/D

Page 2

NTD5406N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V,

= 40 V

= 0 V, V

= 0 V, I

= 250 A

= ±30 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, ID = 250 A

= 10 V, I

= 5.0 V, I

= 10 V, I

= 30 A 8.7 10 m

= 10 A 13.2 17

= 10 A 19 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 10 V, V

= 30 A

= 32 V

= 32 V,

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 10 V, V

= 30 A, R

= 2.5 

= 32 V,

SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 5.0 V, V

= 30 A, R

= 2.5 

= 20 V,

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

= 0 V,

= 10 A

= 0 V, dISD/dt = 100 A/s,

= 10 A

2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

40 V

42 mV/°C

= 25°C 1.0 A

= 100°C 10

1.5 3.5 V

−7.0 mV/°C

1375 2500 pF

370 700

160 300

2.0

5.4

7.2

147

= 25°C 0.82 1.1

= 125°C 0.67

65 nC

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Page 3

NTD5406N

TYPICAL PERFORMANCE CURVES

VGS = 7 V to 10 V

TJ = 25°C

DRAIN CURRENT (AMPS)

13 759

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

610

Figure 1. On−Region Characteristics

0.03

0.025

0.02

0.015

0.01

DRAIN−TO−SOURCE RESISTANCE ()

0.005 36

DS(on),

, GATE−TO−SOURCE VOLTAGE (VOLTS)

759

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

6 V

5 V

4.8 V

4.6 V

VDS ≥ 10 V

4.4 V 30

4.2 V 20

DRAIN CURRENT (AMPS)

4 V

3.8 V

3.6 V

TJ = 100°C

TJ = 25°C

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

DRAIN−TO−SOURCE RESISTANCE ()

0.004

DS(on),

TJ = 25°C

VGS = 5 V

VGS = 10 V

20 30 40

ID, DRAIN CURRENT (AMPS)

ID = 30 A T

= 25°C

8 6050

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

8670

ID = 10 A V

= 10 V

1.8

1.6

1.4

1.2

DRAIN−TO−SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

Figure 5. On−Resistance Variation with

50 175

125100

TJ, JUNCTION TEMPERATURE (°C)

Temperature

10000

1000

100

, LEAKAGE (nA)

DSS

150

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VGS = 0 V

TJ = 175°C

TJ = 100°C

468

10 18

16142

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 4

NTD5406N

TYPICAL PERFORMANCE CURVES

3600

VDS = 0 V VGS = 0 V

3000

iss

TJ = 25°C

2400

rss

1800

iss

1200

C, CAPACITANCE (pF)

600

GSVDS

rss

oss

251555 35

201010

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 32 V I

= 30 A

= 10 V

100

t, TIME (ns)

1 10 100

d(off)

d(on)

, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

, GATE-TO-SOURCE VOLTAGE (VOLTS)

10 30

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To −Source Voltage vs. Total Charge

VGS = 0 V T

= 25°C

, SOURCE CURRENT (AMPS)

0.4 0.70.5

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

ID = 30 A T

20 40

0.80.6

= 25°C

0.9 1

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1000

VGS = 10 V SINGLE PULSE TC = 25°C

100

, DRAIN CURRENT (A)

DS(on)

LIMIT

THERMAL LIMIT

0.1

PACKAGE LIMIT

0.1 1 10 100

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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10 s

100 s

1 ms

10 ms

Page 5

NTD5406N

TYPICAL PERFORMANCE CURVES

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

SINGLE PULSE

0.01

0.00001 0.0001 0.001 0.01 0.1 1

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

Figure 12. Thermal Response

(pk)

DUTY CYCLE, D = t1/t

t, TIME (s)

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

(pk)

(t)



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Page 6

12 3

0.005 (0.13) C

DETAIL A

NTD5406N

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C−01

ISSUE D

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

SEATING

PLANE

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

MILLIMETERSINCHES

6.20

0.244

2.58

3.00

0.118

0.102

5.80

0.228

1.60

0.063

SCALE 3:1

6.17

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD5406N/D