Datasheet NTD4804N Datasheet (ON Semiconductor)

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Page 1

NTD4804N

)

Power MOSFET

30 V, 117 A, Single N−Channel, DPAK/IPAK

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Gate−to−Source Voltage V

Continuous Drain Current (R

Power Dissipation (R

) (Note 1)

Continuous Drain Current (R

Power Dissipation (R

) (Note 2)

Continuous Drain Current (R (Note 1)

Power Dissipation (R

) (Note 1)

Pulsed Drain Current Current Limited by Package TA = 25°C I Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, I

Lead Temperature for Soldering Purpos es (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise noted)

Parameter Symbol Value Unit

DSS

) (Note 1

) (Note 2

)

= 30 A, RG = 25 W)

L(pk)

Steady

State

tp=10ms

TA = 25°C TA = 85°C 15 TA = 25°C P

TA = 25°C TA = 85°C 11 TA = 25°C P

TC = 25°C TC = 85°C 91 TC = 25°C P

TA = 25°C I

DmaxPkg

stg

30 V

"20 V

2.5 W

14.5

1.43 W

117

93.75 W

230 A

45 A

− 55 to 175

78 A

450 mJ

260 °C

°C

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(BR)DSS

30 V

CASE 369C

DPAK

(Bent Lead)

STYLE 2

DS(on)

4.0 mW @ 10 V

5.5 mW @ 4.5 V

CASE 369AD

3 IPAK

(Straight Lead)

MAX

ID MAXV

117 A

N−Channel

CASE 369D

IPAK

(Straight Lead

DPAK)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Gate

Drain

YWW4804NG

Drain

Sourc

Drain

YWW4804NG

Drain

Gate

Drain

YWW4804NG

Drain

Source

Y = Year WW = Work Week 4804N = Device Code G = Pb−Free Package

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

February, 2007 − Rev. 4

1 Publication Order Number:

NTD4804N/D

Page 2

NTD4804N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2)

JC−TAB

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage

(BR)DSS

(BR)DSS/TJ

VGS = 0 V, ID = 250 mA

30 V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

DSS

GSS

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = "20 V "100 nA

TJ = 25°C 1.0 mA

TJ = 125°C 10

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V Negative Threshold Temperature

GS(TH)

GS(TH)/TJ

VGS = VDS, ID = 250 mA

1.5 2.5 V

Coefficient

Drain−to−Source On Resistance R

DS(on)

VGS = 10 to 11.5 V

ID = 30 A 3.4 4.0 mW ID = 15 A 3.4

VGS = 4.5 V

ID = 30 A 4.7 5.5 ID = 15 A 4.6

Forward Transconductance gFS VDS = 15 V, ID = 15 A 23 S

CHARGES AND CAPACITANCES

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q Total Gate Charge Q

iss

oss

rss

G(TOT)

G(TH)

GS GD

G(TOT)

VGS = 0 V, f = 1.0 MHz,

VDS = 12 V

VGS = 4.5 V, VDS = 15 V,

ID = 30 A

VGS = 11.5 V, VDS = 15 V,

4490

ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t Rise Time t Turn−Off Delay Time t Fall Time t Turn−On Delay Time t Rise Time t Turn−Off Delay Time t Fall Time t

d(on)

d(off)

d(on)

d(off)

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, R

= 3.0 W

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, R

= 3.0 W

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

1.6

3.5 60

105

26 mV/°C

7.6 mV/°C

952 556

30 40

5.5 13 13 73 nC

18 20 24

8 10 19 35

°C/W

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Page 3

NTD4804N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t Charge Time ta 19

VGS = 0 V, dIs/dt = 100 A/ms

Discharge Time tb 15 Reverse Recovery Time Q

TJ = 25°C 0.81 1.2

TJ = 125°C 0.72

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance L Drain Inductance, DPAK L Drain Inductance, IPAK L Gate Inductance L Gate Resistance R

S D D G G

TA = 25°C

30 nC

2.49

0.0164

1.88

3.46

0.6

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Page 4

NTD4804N

TYPICAL PERFORMANCE CURVES

240

200

160

120

, DRAIN CURRENT (AMPS)

0521

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10 V

6 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.010

0.009

0.008

0.007

0.006

0.005

0.004

, DRAIN−TO−SOURCE RESISTANCE (W)

0.003

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

TJ = 25°C

4.5 V

4 V

3.6 V

3.2 V

610

4 10

ID = 30 A TJ = 25°C

240

VDS ≥ 10 V

200

160

120

, DRAIN CURRENT (AMPS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.01 TJ = 25°C

0.0075

0.005

0.0025

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

Figure 4. On−Resistance vs. Drain Current and

Voltage

TJ = 125°C

TJ = 25°C

TJ = −55°C

VGS = 11.5 V

30 4020

ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

Gate Voltage

100

1.7 ID = 30 A

1.6

1.5

1.4

1.3

1.2

1.1

1.0

(NORMALIZED)

0.9

, DRAIN−TO−SOURCE RESISTANCE

0.8

0.7

DS(on)

= 10 V

−50 50250−25 75 125100 TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

100,000

10,000

, LEAKAGE (nA)

1000

DSS

150

175

100

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VGS = 0 V

TJ = 175°C

TJ = 125°C

151005

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Drain Voltage

Page 5

NTD4804N

6000

)

t, TIME (ns)

TYPICAL PERFORMANCE CURVES

iss

TJ = 25°C

5000

4000

3000

2000

rss

iss

C, CAPACITANCE (pF)

oss

rss

1000

VGS = 0 VVDS = 0 V

15 0 10 15 25

55 V

GATE−TO−SOURCE OR DRAI N−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = 15 V ID = 30 A VGS = 11.5 V

100

d(off)

d(on)

ID = 30 A TJ = 25°C

, GATE−TO−SOURCE VOLTAGE (VOLTS

105

3015

QG, TOTAL GATE CHARGE (nC)

3010

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

VGS = 0 V

TJ = 25°C

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

VGS = 20 V

, DRAIN CURRENT (AMPS)

SINGLE PULSE TC = 25°C

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

0.1 1 100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

, SOURCE CURRENT (AMPS)

0.2 0.4 1

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

500

400

300

200

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

50 75 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.6 0.8

100 125

ID = 30 A

150

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Page 6

100

, DRAIN CURRENT (AMPS)

NTD4804N

TYPICAL PERFORMANCE CURVES

25°C

125°C

100°C

1.0

D = 0.5

0.05

0.1

0.02

(NORMALIZED)

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.2

0.1

0.01

SINGLE PULSE

10001 100

PULSE WIDTH (ms)

Figure 13. Avalanche Characteristics

(pk)

(t) = r(t) R

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN

DUTY CYCLE, D = t1/t

READ TIME AT t T

− TC = P

J(pk)

(pk)

(t)

1.0E+00 1.0E+011.0E−011.0E−021.0E−031.0E−041.0E−05

t, TIME (ms)

Figure 14. Thermal Response

ORDERING INFORMATION

Order Number Package Shipping

NTD4804NT4G DPAK

(Pb−Free)

NTD4804N−1G IPAK

(Pb−Free)

2500/Tape & Reel

75 Units/Rail

NTD4804N−35G IPAK Trimmed Lead

(3.5 " 0.15 mm)

75 Units/Rail

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 7

NTD4804N

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE O

NOTES:

SEATING

−T−

PLANE

123

2 PL

0.13 (0.005) T

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

MILLIMETERSINCHES

6.20

0.244

3.0

0.118

2.58

0.101

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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Page 8

SEATING PLANE

NTD4804N

PACKAGE DIMENSIONS

3.5 MM IPAK, STRAIGHT LEAD

CASE 369AD−01

ISSUE O

0.13 T

NOTES:

1.. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2.. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND

0.30mm FROM TERMINAL TIP.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD GATE OR MOLD FLASH.

MILLIMETERS

DIM MIN MAX

A 2.19 2.38 A1 0.46 0.60 A2 0.87 1.10

b 0.69 0.89

b1 0.77 1.10

D 5.97 6.22 D2 4.80 −−−

E 6.35 6.73 E2 4.70 −−− E3 4.45 5.46

e 2.28 BSC

L 3.40 3.60 L1 −−− 2.10 L2 0.89 1.27

OPTIONAL

CONSTRUCTION

IPAK (STRAIGHT LEAD DPAK)

CASE 369D−01

ISSUE B

123

−T−

SEATING PLANE

D 3 PL

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88

E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45

S 0.025 0.040 0.63 1.01

V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

PUBLICATION ORDERING INFORMATION

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For additional information, please contact your local Sales Representative

NTD4804N/D