Datasheet ntd3055-150 Datasheet

Page 1

NTD3055-150

Power MOSFET

9.0 A, 60 V, N−Channel DPAK

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

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Features

• Pb−Free Packages are Available

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Drain−to−Gate Voltage (RGS = 10 MW)

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tpv10 ms)

Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 100°C

− Single Pulse (tpv10 ms)

Total Power Dissipation @ T

Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc,

L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended pad size.

= 25°C unless otherwise noted)

Rating Symbol Value Unit

60 Vdc

"20 "30

9.0

3.0 27

28.8

0.19

2.1

1.5

−55 to 175 °C

30 mJ

5.2

71.4 100

260 °C

Vdc

Adc

Apk

W/°C

W W

°C/W

= 25°C

V V

R R R

DSS

DGR

GS GS

I I

q q q

D D

stg

JC JA JA

9.0 AMPERES, 60 VOLTS R

DS(on)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

= 122 mW (Typ)

N−Channel

MARKING

DIAGRAMS

DPAK

CASE 369C

STYLE 2

“SURFACE MOUNT”

Gate

DPAK−3

CASE 369D

STYLE 2

“STRAIGHT LEAD”

Gate

3150 = Device Code Y = Year WW = Work Week G = Pb−Free Package

Drain

YWW

Drain

YWW

Drain

3150G

3 Source

3150G

3 Source

May, 2010 − Rev. 4

1 Publication Order Number:

NTD3055−150/D

Page 2

NTD3055−150

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

= 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 Vdc, ID = 4.5 Adc)

Static Drain−to−Source On−Voltage (Note 3)

(VGS = 10 Vdc, ID = 9.0 Adc) (VGS = 10 Vdc, ID = 4.5 Adc, TJ = 150°C)

Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

= 48 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc,

RG = 9.1 W) (Note 3)

Fall Time t

Gate Charge

(VDS = 48 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3)

(IS = 19 Adc, VGS = 0 Vdc, TJ =

150°C)

Reverse Recovery Time

(IS = 9.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

(BR)DSS

DSS

GSS

GS(th)

DS(on)

d(on)

d(off)

iss

oss

rss

−

70.2

−

mV/°C

mAdc

Vdc

−

1.0 10

− − ±100 nAdc

Vdc

2.0

−

3.0

6.4

4.0

−

mV/°C

− 122 150

Vdc

−

1.4

1.1

1.9

−

− 5.4 − mhos

− 200 280

− 70 100

− 26 40

− 11.2 25

− 37.1 80

− 12.2 25

− 23 50

− 7.1 15

− 1.7 −

− 3.5 −

−

0.98

0.86

1.20

−

− 28.9 −

Vdc

− 21.6 −

− 7.3 −

− 0.036 −

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Page 3

NTD3055−150

VGS = 10 V

VGS = 9 V

VGS = 8 V

, DRAIN CURRENT (AMPS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

231

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.5

VGS = 10 V

0.4

0.3

4675

TJ = 100°C

VGS = 7 V

VGS = 6 V

VGS = 5 V

TJ = 25°C

, DRAIN CURRENT (AMPS)

TJ = 100°C

34 7

0.5

0.4

0.3

VDS ≥ 10 V

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VGS = 15 V

TJ = 100°C

0.2

0.1

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

4121624

TJ = 25°C

TJ = −55°C

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

2.2

ID = 4.5 A

1.8

1.6

1.4

1.2

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

0.6

DS(on)

−50 100750−25 125 175

= 10 V

5025

TJ, JUNCTION TEMPERATURE (°C)

150

0.2

0.1

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

TJ = 25°C

TJ = −55°C

84121624

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

, LEAKAGE (nA)

DSS

040302010 60

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 100°C

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−To−Source Leakage

Current versus Voltage

Page 4

NTD3055−150

560

480

iss

VGS = 0 VVDS = 0 V

TJ = 25°C

400

320

rss

240

iss

160

C, CAPACITANCE (pF)

rss

oss

20100

1555 78

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

100

VDS = 30 V ID = 9 A VGS = 10 V

, GATE−TO−SOURCE VOLTAGE (V)

01 6

2345

Qg, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage versus Total Charge

VGS = 0 V TJ = 25°C

ID = 9 A TJ = 25°C

d(off)

d(on)

t, TIME (ns)

10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

100

VGS = 20 V SINGLE PULSE TC = 25°C

100 ms

, DRAIN CURRENT (AMPS)

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1 ms 10 ms

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

10 ms

10 100

, SOURCE CURRENT (AMPS)

0.6 0.920.840.760.68 1

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus

Current

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN−TO−SOURCE

25 1251007550

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = 7.75 A

1751501

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Page 5

NTD3055−150

D = 0.5

0.2

0.1

0.05

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

SINGLE PULSE

0.1

0.00001 0.001 0.01 0.1 100.0001 1

t, TIME (s)

Figure 13. Thermal Response

ORDERING INFORMATION

Device Package Shipping

NTD3055−150 DPAK 75 Units/Rail

NTD3055−150G DPAK

NTD3055−150−1 DPAK−3 75 Units/Rail

NTD3055−150−1G DPAK−3

NTD3055−150T4 DPAK 2500 Tape & Reel

NTD3055−150T4G DPAK

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

(Pb−Free)

(pk)

DUTY CYCLE, D = t1/t

75 Units/Rail

2500 Tape & Reel

†

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Page 6

NTD3055−150

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE C

NOTES:

SEATING

−T−

PLANE

123

2 PL

0.13 (0.005) T

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58

F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89

L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

2.58

0.101

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

inches

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Page 7

NTD3055−150

PACKAGE DIMENSIONS

DPAK−3

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

D 3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88

E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45

S 0.025 0.040 0.63 1.01

V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

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NTD3055−150/D