Datasheet ntd2955-p Datasheet

NTD2955, NTD2955P

Power MOSFET

-60 V, -12 A, P-Channel DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

(BR)DSS

-60 V

http://onsemi.com

R

TYP

DS(on)

155 mW @ -10 V, 6 A

ID MAXV

-12 A

Features

•Avalanche Energy Specified

•I

DSS

and V

Specified at Elevated Temperature

DS(on)

•Designed for Low-Voltage, High-Speed Switching Applications and

to Withstand High Energy in the Avalanche and Commutation Modes

•Pb-Free Packages are Available

MAXIMUM RATINGS (T

Rating

Drain-to-Source Voltage V

Gate-to-Source Voltage

- Continuous

- Non-repetitive (tp ≤ 10 ms)

Drain Current

Drain Current - Continuous @ T Drain Current - Single Pulse (t

Total Power Dissipation @ Ta = 25°C P

Operating and Storage Temperature

Range

Single Pulse Drain-to-Source Avalanche

Energy - Starting T

= 25 Vdc, VGS = 10 Vdc, Peak

(V

DD

I

= 12 Apk, L = 3.0 mH, RG = 25 W)

L

Thermal Resistance

- Junction-to-Case

- Junction-to-Ambient (Note 1)

- Junction-to-Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8 in. from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in pad size

(Cu area = 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu area = 0.412 in

= 25°C unless otherwise noted)

J

= 25°C

a

≤ 10 ms)

p

= 25°C

J

2

).

2

).

Symbol Value Unit

stg

-60 Vdc

±20 ±25

-12

-36

55 W

-55 to 175

216 mJ

2.73

71.4 100

260 °C

Vdc Vpk

Adc Apk

°C

°C/W

DSS

V

GSM

I

DM

TJ, T

E

R R R

T

q q q

GS

D

AS

JC JA JA

L

2

1

3

DPAK

CASE 369C

STYLE 2

1

2

3

DPAK-3

CASE 369D

STYLE 2

P-Channel

D

G

S

MARKING DIAGRAMS

4

Drain

YWWNT2955G

2

1

Gate

4

Y = Year WW = Work Week G = Pb-Free Package

Drain

3 Source

Gate

4

Drain

YWW

NTP

2

1

Drain

4

Drain

YWWNT2955G

1

2

Drain

2955G

3 Source

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 9

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

1 Publication Order Number:

NTD2955/D

NTD2955, NTD2955P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage (Note 3)

= 0 Vdc, ID = -0.25 mA)

(V

GS

(Positive Temperature Coefficient)

Zero Gate Voltage Drain Current

= 0 Vdc, VDS = -60 Vdc, TJ = 25°C)

(V

GS

= 0 Vdc, VDS = -60 Vdc, TJ = 150°C)

(V

GS

Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= VGS, ID = -250 mAdc)

(V

DS

(Negative Temperature Coefficient)

Static Drain-Source On-State Resistance

= -10 Vdc, ID = -6.0 Adc)

(V

GS

Drain-to-Source On-Voltage

= -10 Vdc, ID = -12 Adc)

(V

GS

= -10 Vdc, ID = -6.0 Adc, TJ = 150°C)

(V

GS

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = -25 Vdc, VGS = 0 Vdc,

F = 1.0 MHz)

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS (Notes 3 and 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

(V

= -30 Vdc, ID = -12 A,

DD

= -10 V, R

V

GS

= 9.1 W)

G

Fall Time t

Gate Charge

(VDS = -48 Vdc, VGS = -10 Vdc,

I

= -12 A)

D

DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3)

Diode Forward On-Voltage

= 12 Adc, VGS = 0 V)

(I

S

= 12 Adc, VGS = 0 V, TJ = 150°C)

(I

S

Reverse Recovery Time

(I

= 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)

S

Reverse Recovery Stored Charge Q

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

gFS

C

t

d(on)

d(off)

Q

V

t

iss

oss

rss

GS

GD

SD

rr

a

b

RR

-60

-

67

-

-10

-100

- - -100 nAdc

-2.0

-

-2.8

4.5

-4.0

-

- 0.155 0.180

-1.86

-

-2.6

-2.0

8.0 - Mhos

- 500 750

- 150 250

- 50 100

- 10 20

r

- 45 85

- 26 40

f

T

- 48 90

- 15 30

- 4.0 -

- 7.0 -

-

-1.6

-1.3

-2.5

-

- 50

- 40 -

- 10 -

- 0.10 -

Vdc

mV/°C

mAdc

Vdc

mV/°C

Vdc

pF

ns

nC

Vdc

ns

mC

W

http://onsemi.com

2

NTD2955, NTD2955P

TYPICAL PERFORMANCE CURVES (T

25

TJ = 25°C

20

15

10

DRAIN CURRENT (A)

D,

5

-I

0

012345

-V

DS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.50

VGS = -10 V

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

DRAIN-TO-SOURCE RESISTANCE (Ω)

0.05

0

03 6 15 24

DS(on),

R

VGS = -10 V

-9 V

-9.5 V

678910

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 125°C

25°C

-55°C

12 21 3 12 15

, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)

-I

D

189

-8 V

-7 V

-6.5 V

-6 V

-5.5 V

-5 V

= 25°C unless otherwise noted)

J

24 22 20

VDS ≥ -10 V

TJ = -55°C

25°C

125°C

18

16 14

12

10

8

DRAIN CURRENT (A)

6

D,

-I

4 2

0

24 6 810

3579

, GATE-TO-SOURCE VOLTAGE (VOLTS)

-V

GS

0.250 TJ = 25°C

0.225

0.200

0.175

VGS = -10 V

0.150

0.125

-15 V

0.100

0.075

DRAIN-TO-SOURCE RESISTANCE (Ω)

0.050

0 6 21 24

DS(on),

R

918

Figure 3. On-Resistance versus Drain Current

and Temperature

2.0

VGS = -10 V

1.8

I

= -6 A

D

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

-50

DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

-25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

J

Figure 5. On-Resistance Variation with

Temperature

1000

100

, LEAKAGE (nA)

10

DSS

-I

175

1

http://onsemi.com

3

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 125°C

100°C

15 30 40

10 25 5535 45

520 5060

Figure 6. Drain-To-Source Leakage

Current versus Voltage

NTD2955, NTD2955P

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

C

iss

C

rss

VDS = 0 V

VGS = 0 V

TJ = 25°C

C

iss

C

oss

C

rss

0

10 0 10 15 25

55

-V

GS

DS

20

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = -30 V I

= -12 A

D

= -10 V

V

GS

T

= 25°C

J

100

t

f

t

r

t

t, TIME (ns)

10

t

d(off)

d(on)

15

V

DS

12.5

Q

T

Q

GD

7.5

10

Q

GS

5

2.5

, GATE-TO-SOURCE VOLTAGE (V)-I

GS

0

-V

0

2468

Q

, TOTAL GATE CHARGE (nC)

T

Figure 8. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

15

VGS = 0 V T

= 25°C

J

10

5

ID = 12 A

= 25°C

T

J

V

14

-V

60

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

50

40

GS

30

20

10

0

1610 12

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

100

VGS = -15 V SINGLE PULSE TC = 25°C

10

100 ms

1 ms

1

R

, DRAIN CURRENT (AMPS)

D

I

0.1

0.1 1 10 100

DS(on)

THERMAL LIMIT PACKAGE LIMIT

10 ms

dc

LIMIT

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

, SOURCE CURRENT (AMPS)

S

0

0 0.25 0.75 1.75

0.5 1 1.25 1.5

, SOURCE-TO-DRAIN VOLTAGE (V)

-V

SD

Figure 10. Diode Forward Voltage versus Current

di/dt

I

S

t

rr

t

a

b

t

p

0.25 I

I

S

Figure 12. Diode Reverse Recovery Waveform

TIME

S

http://onsemi.com

4

NTD2955, NTD2955P

1.0

D = 0.5

0.2

0.1

0.05

0.1

0.02

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

SINGLE PULSE

0.01

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t, TIME (s)

Figure 13. Thermal Response

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

R

(t) = r(t) R

q

JC

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

2

(pk)

1

R

(t)

q

JC

http://onsemi.com

5

ORDERING INFORMATION

NTD2955, NTD2955P

Device Package Shipping

NTD2955 DPAK

NTD2955G DPAK

(Pb-Free)

NTD2955-001 DPAK-3

NTD2955-1G DPAK-3

(Pb-Free)

NTD2955T4 DPAK

NTD2955T4G DPAK

(Pb-Free)

NTD2955PT4G DPAK

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

75 Units / Rail

2500 / Tape & Reel

†

http://onsemi.com

6

NTD2955, NTD2955P

PACKAGE DIMENSIONS

DPAK

CASE 369C-01

ISSUE O

SEATING

-T-

PLANE

B

V

S

R

4

A

123

K

F

L

D

2 PL

G

0.13 (0.005) T

C

E

Z

U

J

H

M

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 --- 0.51 --- V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 ---

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

5.80

0.228

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

3.0

0.118

1.6

0.063

SCALE 3:1

6.172

0.243

mm

ǒ

inches

Ǔ

http://onsemi.com

7

NTD2955, NTD2955P

PACKAGE DIMENSIONS

DPAK-3

CASE 369D-01

ISSUE B

V

S

-T-

SEATING PLANE

F

B

R

4

123

G

A

K

3 PL

D

0.13 (0.005) T

0.228

J

M

5.80

C

E

H

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

3.0

0.118

1.6

0.063

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

Z

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 ---

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

6.172

0.243

MILLIMETERSINCHES

mm

ǒ

SCALE 3:1

inches

Ǔ

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800-282-9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81-3-5773-3850

http://onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

NTD2955/D

8