Datasheet NTD20P06LT4G Specification

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Page 1

NTD20P06L, NTDV20P06L

Power MOSFET

−60 V, −15.5 A, Single P−Channel, DP AK

Features

• Withstands High Energy in Avalanche and Commutation Modes

• Low Gate Charge for Fast Switching

• AEC Q101 Qualified − NTDV20P06L

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Bridge Circuits

• Power Supplies, Power Motor Controls

• DC−DC Conversion

(BR)DSS

−60 V

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TYP

DS(on)

130 mW @ −5.0 V

P−Channel

MAX

(Note 1)

−15.5 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V Gate−to−Source

Voltage

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Single Pulse Drain−to−Source Avalanche Energy (V L = 2.7 mH, R

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Non−Repetitive tp v10 ms V

= 25 V, V

= 25 W)

= 25°C unless otherwise noted)

Continuous V

Steady State TA = 25°C I

Steady State TA = 25°C P

tp = 10 ms

= 5 V, IPK = 15 A,

DSS

GSM

STG

−60 V

$20 V $30

−15.5 A

65 W

$50 A

−55 to 175

304 mJ

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.)

2.3 80

110

°C/W

MARKING DIAGRAMS

Gate

Drain

AYWW

Drain

AYWW

Drain

T20

P06LG

3 Source

P06LG

3 Source

DPAK

CASE 369C

STYLE 2

IPAK/DPAK CASE 369D

STYLE 2

20P06L Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

October, 2016 − Rev. 7

1 Publication Order Number:

NTD20P06L/D

Page 2

NTD20P06L, NTDV20P06L

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage

Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = −250 mA

TJ = 25°C −1.0 mA

TJ = 150°C −10

= 0 V,

= −60 V

VDS = 0 V, VGS = ±20 V ±100 nA

−60 −74 V

−64 mV/°C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage Gate Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g Drain−to−Source On−Voltage V

GS(TH)

DS(on)

VGS = VDS, ID = −250 mA

VGS = −5.0 V, ID = −7.5 A 0.130 0.150 W

= −5.0 V, ID = −15 A 0.143

= −10 V, ID = −7.5 A 11 S

VGS = −5.0 V,

ID = −7.5 A

TJ = 25°C −1.2

TJ = 150°C −1.9

−1.0 −1.5 −2.0 V

3.1 mV/°C

CHARGES AND CAPACITANCES

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = −25 V

= −5.0 V, V

ID = −18 A

= −48 V,

740 1190 207 300

66 120 15 26

4.0

7.0

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

VGS = −5.0 V, VDD = −30 V,

= −15 A, RG = 9.1 W

11 20 90 180 28 50 70 135

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

a b

VGS = 0 V, IS = −15 A

VGS = 0 V, dIS/dt = 100 A/ms,

= −12 A

TJ = 25°C 1.5 2.5

TJ = 150°C 1.3

60 39 21

0.13 nC

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%

4. Switching characteristics are independent of operating junction temperatures

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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Page 3

40 35

30 25 20 15

, DRAIN CURRENT (A)

−I

VGS = −10 V

VGS = −9 V

VGS = −8 V

VGS = −7 V

5 0

012345678910

−V

Figure 1. On−Region Characteristics

NTD20P06L, NTDV20P06L

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

VGS = −6 V

VGS = −5.5 V

VGS = −5 V

VGS = −4.5 V

VGS = −4 V

VGS = −3.5 V

VGS = −3 V

TJ = 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = −55°C

TJ = 25°C

, DRAIN CURRENT (A)

−I

0123456789

, GATE−TO−SOURCE VOLTAGE (V)

−V

TJ = 125°C

VDS w 10 V

Figure 2. Transfer Characteristics

0.5 VGS = −5 V

0.45

0.4

0.35

0.3

(W)

, DRAIN−TO−SOURCE RESISTANCE

DS(on)

0.25

0.2

0.15

0.1

0.05 0

0 5 10 15 20 25 30

TJ = 125°C

TJ = 25°C

TJ = −55°C

−ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus Drain Current

and Temperature

1.8

ID = −7.5 A

= −5 V

1.6

1.4

1.2 1

0.8

0.6

(NORMALIZED)

0.4

0.2

, DRAIN−TO−SOURCE RESISTANCE

DS(on)

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.25

0.225

0.175

0.125

0.075

0.025

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

TJ = 25°C

0.2

0.15

0.1

0.05

0 3 6 9 12 15 18 21 24

VGS = −5 V

VGS = −10 V

−ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10000

, LEAKAGE (nA)

−I

VGS = 0 V

1000

100

5 1015202530354045505560

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 150°C

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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Page 4

NTD20P06L, NTDV20P06L

2400

t, TIME (nS)

2200 2000 1800 1600 1400 1200 1000

800 600

C, CAPACITANCE (pF)

400 200

7.5

6.25

5.0

3.75

(V)

2.5

VDS = 0 V TJ = 25°C

iss

rss

VGS = 0 V

iss

oss

rss

−10 −5 0 5 10 15 20 25

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (V)

Figure 7. Capacitance Variation

ID = −15 A TJ = 25°C

(V)

, DRAIN−TO−SOURCE VOLTAGE

1.25

, GATE−TO−SOURCE VOLTAGE

−V

0481216

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge

1000

VDD = −30 V

= −15 A

= −5 V

100

1 10 100

d(off)

d(on)

Rg, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

VGS = 0 V

= 25°C

, SOURCE CURRENT (A)

−I

0 0.25 0.5 0.75 1 1.25 1.5 1.7

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

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Page 5

NTD20P06L, NTDV20P06L

1000

VGS = −15 V Single Pulse TC = 25°C

100

, DRAIN CURRENT (A)

−I

DS(on)

Limit

Thermal Limit

0.1

Package Limit

0.1 1 10 100

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

D = 0.5

0.2

0.1

0.05

0.1

0.02

10 ms

100

350

ID = −15 A

300

250

200

150

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

25 50 75 100 125 150

, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.01 Single Pulse

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

, EFFECTIVE TRANSIENT THERMAL RESPONSE

C/W)

jc(

Figure 13. Thermal Response

t, TIME (s)

ORDERING INFORMATION

Device Package Shipping

NTD20P06LG

NTD20P06LT4G 2500 / Tape & Reel

NTDV20P06LT4G 2500 / Tape & Reel

DPAK

(Pb−Free)

75 Units / Rail

NTDV20P06LT4G−VF01 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 6

DPAK (SINGLE GAUGE)

12 3

TOP VIEW

GAUGE PLANE

DETAIL A

ROTATED 90 CW5

NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

CASE 369C−01

ISSUE F

NOTE 7

0.005 (0.13) C

HDETAIL A

SIDE VIEW

SEATING

PLANE

BOTTOM VIEW

ALTERNATE

CONSTRUCTIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

7. OPTIONAL MOLD FEATURE.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.028 0.045 0.72 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

2.58

0.102

3.00

0.118

0.063

1.60

SCALE 3:1

6.17

0.243

inches

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Page 7

NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

IPAK

CASE 369D−01

ISSUE C

−T−

SEATING PLANE

123

3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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NTD20P06L/D