Page 1
NTD20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching
• These are Pb−Free Devices
Applications
• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source
Voltage
Continuous
Drain Current
(Note 1)
Power Dissipation (Note 1)
Pulsed Drain
Current
Operating Junction and Storage Temperature TJ,
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, V
L = 2.7 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Non−Repetitive tp v10 ms V
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfa ce−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
= 25°C unless otherwise noted)
J
Continuous V
Steady State TA = 25°C I
Steady State TA = 25°C P
tp = 10 ms
T
= 5 V, IPK = 15 A,
GS
R
R
R
DSS
GSM
I
DM
STG
E
T
q
q
q
GS
D
D
AS
L
JC
JA
JA
−60 V
$20 V
$30
−15.5 A
65 W
$50 A
−55 to
175
304 mJ
260 °C
°C/W
2.3
80
110
°C
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ID MAX
V
(BR)DSS
−60 V
R
TYP
DS(on)
130 mW @ −5.0 V
P−Channel
D
G
S
(Note 1)
−15.5 A
MARKING DIAGRAMS
Gate
Gate
1
1
4
Drain
AYWW
2
Drain
4
Drain
AYWW
2
Drain
T20
T20
P06LG
3
Source
P06LG
3
Source
4
2
1
3
DPAK
CASE 369C
STYLE 2
4
1
2
3
IPAK/DPAK
CASE 369D
STYLE 2
20P06L Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 5
1 Publication Order Number:
NTD20P06L/D
Page 2
NTD20P06L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS/TJ
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = −250 mA
V
= 0 V,
GS
V
= −60 V
DS
VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
Gate Threshold Temperature Coefficient V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
Drain−to−Source On−Voltage V
GS(TH)
DS(on)
FS
DS(on)
VGS = VDS, ID = −250 mA
VGS = −5.0 V, ID = −7.5 A 0.130 0.150 W
V
= −5.0 V, ID = −15 A 0.143
GS
V
= −10 V, ID = −7.5 A 11 S
DS
VGS = −5.0 V,
ID = −7.5 A
CHARGES AND CAPACITANCES
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
ISS
OSS
RSS
G(TOT)
GS
GD
VGS = 0 V, f = 1 MHz, VDS = −25 V
V
= −5.0 V, V
GS
ID = −18 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(ON)
r
d(OFF)
f
VGS = −5.0 V, VDD = −30 V,
ID = −15 A, RG = 9.1 W
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
RR
SD
a
b
RR
VGS = 0 V, IS = −15 A
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −12 A
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
−60 −74 V
−64 mV/°C
TJ = 25°C −1.0 mA
TJ = 150°C −10
−1.0 −1.5 −2.0 V
3.1 mV/°C
TJ = 25°C −1.2
TJ = 150°C −1.9
740 1190
207 300
66 120
15 26
= −48 V,
DS
4.0
7.0
11 20
90 180
28 50
70 135
TJ = 25°C 1.5 2.5
TJ = 150°C 1.3
60
39
21
0.13 nC
V
pF
nC
ns
V
ns
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2
Page 3
40
35
30
25
20
15
, DRAIN CURRENT (A)
10
D
−I
VGS = −10 V
VGS = −9 V
VGS = −8 V
VGS = −7 V
5
0
012345678910
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
NTD20P06L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
VGS = −6 V
VGS = −5.5 V
VGS = −5 V
VGS = −4.5 V
VGS = −4 V
VGS = −3.5 V
VGS = −3 V
TJ = 25°C
40
30
20
, DRAIN CURRENT (A)
10
D
−I
0
0123456789
−VDS, GATE−TO−SOURCE VOLTAGE (V)
TJ = −55°C
TJ = 25°C
TJ = 125°C
VDS w 10 V
Figure 1. On−Region Characteristics
0.5
VGS = −5 V
0.45
0.4
0.35
0.3
(W)
, DRAIN−TO−SOURCE RESISTANCE
DS(on)
R
0.25
0.2
0.15
0.1
0.05
0
0 5 10 15 20 25 30
TJ = 125°C
TJ = 25°C
TJ = −55°C
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
2
1.8
ID = −7.5 A
VGS = −5 V
1.6
1.4
1.2
1
0.8
0.6
(NORMALIZED)
0.4
0.2
, DRAIN−TO−SOURCE RESISTANCE
0
DS(on)
−50 −25 0 25 50 75 100 125 150
R
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 2. Transfer Characteristics
0.25
TJ = 25°C
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
, DRAIN−TO−SOURCE RESISTANCE (W)
0
03691215182124
DS(on)
R
VGS = −5 V
VGS = −10 V
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
, LEAKAGE (nA)
D
−I
VGS = 0 V
1000
100
10
1
5 1015202530354045505560
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 150°C
TJ = 125°C
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
Page 4
NTD20P06L
(
S)
2400
2200
2000
1800
1600
1400
1200
1000
800
600
C, CAPACITANCE (pF)
400
200
0
7.5
6.25
5.0
3.75
(V)
2.5
VDS = 0 V TJ = 25°C
C
iss
C
rss
VGS = 0 V
C
iss
C
oss
C
rss
−10 −50 5 10152025
−V
GS
−V
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
60
ID = −15 A TJ = 25°C
50
Q
G
V
DS
Q
gs
Q
GD
40
30
(V)
V
GS
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE
, GATE−TO−SOURCE VOLTAGE
GS
−V
1.25
0
10
0
0481216
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
1000
VDD = −30 V
ID = −15 A
VGS = −5 V
t
d(off)
R
t
F
t
d(on)
100
n
t, TIME
10
1
1 10 100
t
Rg, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
20
VGS = 0 V
TJ = 25°C
15
10
5
, SOURCE CURRENT (A)
S
−I
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
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4
Page 5
NTD20P06L
1000
VGS = −15 V
Single Pulse
TC = 25°C
100
10
, DRAIN CURRENT (A)
D
1
−I
0.1
0.1 1 10 100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
R
Limit
DS(on)
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
10 ms
100
dc
1
350
300
250
200
150
100
AVALANCHE ENERGY (mJ)
50
0
EAS, SINGLE PULSE DRAIN−TO−SOURCE
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = −15 A
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.01
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
, EFFECTIVE TRANSIENT THERMAL RESPONSE
C/W)
°
jc(
q
R
Single Pulse
t, TIME (s)
Figure 13. Thermal Response
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Page 6
NTD20P06L
ORDERING INFORMATION
Device Package Shipping
NTD20P06L−1G
NTD20P06LG 75 Units / Rail
NTD20P06LT4G 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DPAK
(Pb−Free)
75 Units / Rail
†
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6
Page 7
L3
L4
b2
e
E
b3
4
12 3
A
B
D
b
0.005 (0.13) C
DETAIL A
M
NTD20P06L
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
C
A
c2
H
c
GAUGE
L2
PLANE
L
L1
DETAIL A
ROTATED 90 CW5
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
A1
H
3.00
0.118
C
Z
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
DIM MIN MAX MIN MAX
A 0.086 0.094 2.18 2.38
A1 0.000 0.005 0.00 0.13
b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
5.80
0.228
1.60
0.063
SCALE 3:1
6.17
0.243
mm
ǒ
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
Page 8
NTD20P06L
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
V
S
−T−
SEATING
PLANE
F
B
R
4
123
G
A
K
D 3 PL
0.13 (0.005) T
C
E
J
H
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
0.090 BSC 2.29 BSC
G
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERSINCHES
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NTD20P06L/D
8
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