Datasheet ntb5605-p Datasheet

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Page 1

NTB5605P, NTB5605

Power MOSFET

-60 Volt, -18.5 Amp

P-Channel, D2PAK

Features

•Designed for Low R

DS(on)

•Withstands High Energy in Avalanche and Commutation Modes

•Pb-Free Packages are Available

Applications

•Power Supplies

•PWM Motor Control

•Converters

•Power Management

MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Single Pulse Drain-to-Source Avalanche Energy (V L = 3.0 mH, R

Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)

= 25 V, V

= 25 W)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Case (Drain) – Steady State

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.41 in

= 25°C unless otherwise noted)

Steady

State

Steady

State

= 5.0 V, IPK = 15 A,

TA = 25°C I

TA = 25°C P

tp = 10 ms

Symbol Value Unit

-60 V

$20 V

-18.5 A

88 W

-55 A

-55 to 175

338 mJ

260 °C

1.7 °C/W

°C

DSS

STG

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(BR)DSS

-60 V

DS(on)

120 mW @ -5.0 V

P-Channel

TYP

MAXV

-18.5 A

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

D2PAK

CASE 418B

STYLE 2

x = P or blank A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

NTB5605xG AYWW

Gate

Drain

3 Source

ORDERING INFORMATION

Device Package Shipping

NTB5605P D2PAK 50 Units/Rail

NTB5605PG D

NTB5605PT4 D

NTB5605PT4G D

NTB5605T4G D

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

PAK

(Pb-Free)

PAK 800 Tape & Reel

PAK

(Pb-Free)

PAK

(Pb-Free)

50 Units/Rail

800 Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 3

1 Publication Order Number:

NTB5605P/D

Page 2

NTB5605P, NTB5605

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

(Br)DSS

(Br)DSS/TJ

DSS

VGS = 0 V, ID = -250 mA

VGS = 0 V TJ = 25°C -1.0 mA

VDS = -60 V TJ = 125°C -10

Gate-to-Source Leakage Current I

GSS

VDS = 0 V, VGS = "20 V "100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain-to-Source On Resistance R

Forward Transconductance g

Drain-to-Source On Voltage V

GS(th)

DS(on)

VGS = VDS, ID = -250 mA

VGS = -5.0 V, ID = -8.5 A

VGS = -5.0 V, ID = -17 A

VDS = -10 V, ID = -8.5 A 12 S

VGS = -5.0 V, ID = -8.5 A -1.3 V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

iss

oss

rss

G(TOT)

VGS = 0 V, f = 1.0 MHz,

VDS = -25 V

VGS = -5.0 V, VDS = -48 V,

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = -5.0 V, VDD = -30 V,

ID = -17 A, RG = 9.1 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V I

= -17 A

VGS = 0 V, dIS/dt = 100 A/ms,

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

-60 V

-1.0 -1.5 -2.0 V

= -17 A

TJ = 25°C -1.55 -2.5

TJ = 125°C -1.4

= -17 A

-64 mV/°C

120

140

730 1190

211 300

67 120

13 22

4.0

7.0

12.5 25

122 183

29 58

75 150

0.14

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Page 3

NTB5605P, NTB5605

VGS = -10 V VGS = -9 V

VGS = -8 V VGS = -7 V

TJ = 25°C

, DRAIN CURRENT (AMPS)

-I 5

17539

0642

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-V

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.5 VGS = -5.0 V

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

10 30

-ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = -55°C

VGS = -6 V

VGS = -5.5 V

VGS = -5 V

VGS = -4.5 V

VGS = -4 V

, DRAIN CURRENT (AMPS)

VGS = -3.5 V

VGS = -3 V

810 6

252015

-I

0.225

0.175

0.125

0.075

0.025

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

VDS = -10 V

084

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

0.25 TJ = 25°C

0.2

0.15

0.1

0.05

TJ = -55°C

TJ = 25°C

TJ = 125°C

VGS = -5.0 V

VGS = -10 V

159321

8215793

18126024

Figure 3. On-Resistance vs. Drain Current and

Temperature

ID = -8.5 A

1.8 V

= -5.0 V

1.6

1.4

1.2

0.8

(NORMALIZED)

0.6

0.4

, DRAIN-TO-SOURCE RESISTANCE

0.2

DS(on)

-50 50250-25 75 125100

TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 5. On-Resistance Variation with

Temperature

10000

1000

, LEAKAGE (nA)

DSS

-I

150

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

100

530402010 50 60

TJ = 125°C

35 452515 55

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

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Page 4

NTB5605P, NTB5605

2400 2200 2000

VDS = 0 V

iss

VGS = 0 V

TJ = 25°C

1800

1600 1400

1200

1000

rss

iss

800

600

C, CAPACITANCE (pF)

400 200

rss

-V

155020

oss

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate-to-Source and

1000

d(off)

d(on)

100

t, TIME (ns)

VDD = -30 V I

= -17 A

= -5.0 V

1 10 100 0 0.750.50.25 1.25 1.75

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

, GATE-TO-SOURCE VOLTAGE (VOLTS)

25 0 8 124

-V Qg, TOTAL GATE CHARGE (nC)

Drain-to-Source Voltage vs. Total Charge

VGS = 0 V T

= 25°C

, SOURCE CURRENT (AMPS)

-I

-V

Figure 10. Diode Forward Voltage vs. Current

ID = -17 A T

1 1.5

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

= 25°C

-V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1000

VGS = -20 V SINGLE PULSE

400

350

TC = 25°C

100

300

250

10 ms

1 ms

, DRAIN CURRENT (AMPS)

-I

0.1

0.1 10 1001 25 125 1501007550

Limit

DS(on)

Thermal Limit Package Limit

100 ms

10 ms

200

150

100

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN-TO-SOURCE

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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ID = -15 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

Page 5

D = 0.5

0.2

0.1

0.05

0.01

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.1

r(t), EFFECTIVE TRANSIENT THERMAL

0.001

NTB5605P, NTB5605

t, TIME (s)

Figure 13. Thermal Response

di/dt

1100.10.010.0001

TIME

0.25 I

Figure 14. Diode Reverse Recovery Waveform

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Page 6

NTB5605P, NTB5605

PACKAGE DIMENSIONS

D2PAK

CASE 418B-04

ISSUE J

-B-

231

-T-

SEATING PLANE

VARIABLE CONFIGURATION ZONE

3 PL

0.13 (0.005) T

N P

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

VIEW W-W VIEW W-W VIEW W-W

123

SOLDERING FOOTPRINT*

8.38

0.33

10.66

0.42

17.02

0.67

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

1.016

3.05

0.12

SCALE 3:1

0.04

inches

5.08

0.20

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Page 7

NTB5605P, NTB5605

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTB5605P/D