Datasheet ntb5405n Datasheet

NTB5405N

Power MOSFET

40 V, 116 A, Single N−Channel, D2PAK

Features

• Low R

• High Current Capability

• Low Gate Charge

• These are Pb−Free Devices

Applications

• Electronic Brake Systems

• Electronic Power Steering

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current − R

Power Dissipation − R

Continuous Drain Current − R

Power Dissipation − R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) Pulsed I

Single Pulse Drain−to Source Avalanche Energy − (V L = 1 mH, R

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Junction−to−Case (Drain) R

Junction−to−Ambient (Note 1) R

1. Surface mounted on FR4 board using 1 sq in pad size,

DS(on)

= 25°C unless otherwise stated)

J

Parameter



JC



JC

(Note 1)



JA

(Note 1)



JA

= 50 V, VGS = 10 V, IPK = 40 A,

DD

= 25 )

G

(Cu Area 1.127 sq in [2 oz] including traces).

Steady

State

Steady

State

Steady

State

Steady

State

Parameter Symbol Max Unit

TC = 25°C

TC = 100°C 82

TC = 25°C

TA = 25°C I

TA = 100°C I

TA = 25°C P

tp = 10 s

Symbol Value Unit

DSS

GS

I

D

P

D

I

DM

T

STG

S

EAS 800 mJ

T

L

θ

JC

θ

JA

40 V

±20 V

116

150 W

16.5

11.6

3.0 W

280 A

−55 to 175

75 A

260 °C

1.0 °C/W

50 °C/W

A

°C

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ID MAX

V

(BR)DSS

40 V 4.9 mΩ @ 10 V 116 A

G

R

TYP

DS(ON)

N−Channel

D

S

(Note 1)

MARKING DIAGRAM

1

2

3

D2PAK

CASE 418B

STYLE 2

NTB5405N = Specific Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week

NTB5405NG AYWW

1

ORDERING INFORMATION

Device Package Shipping†

NTB5405NG D2PAK

(Pb−Free)

NTB5405NT4G D2PAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

50 Units / Rail

800 / Tape & Reel

August, 2010 − Rev. 4

1 Publication Order Number:

NTB5405N/D

NTB5405N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

GS

V

= 0 V,

GS

V

= 40 V

DS

V

= 0 V, V

DS

= 0 V, I

= 250 A

D

T

J

= ±30 V ±100 nA

GS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

= VDS, ID = 250 A

GS

V

= 10 V, I

GS

V

= 5.0 V, I

GS

V

= 10 V, I

GS

= 40 A 4.9 5.8 m

D

= 15 A 7.0 8.0

D

= 15 A 32 S

D

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 10 V, V

I

= 40 A

D

= 32 V

DS

= 32 V,

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= 10 V, V

= 40 A, R

DD

= 2.5 

G

= 32 V,

SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

= 20 A, R

I

D

= 5 V, V

DD

= 2.5 

G

= 20 V,

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

V

= 0 V,

GS

I

= 20 A

S

V

= 0 V, dISD/dt = 100 A/s,

GS

I

S

= 20 A

T

J

2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

40 V

39 mV/°C

= 25°C 1.0 A

J

= 100°C 10

1.5 3.5 V

−7.0 mV/°C

2700 4000 pF

700 1400

300 600

88

3.25

9.5

37

8.5

52

55

70

19

153

32

42

= 25°C 0.82 1.1

J

= 100°C TBD

66

35

31

113 nC

nC

ns

V

ns

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2

NTB5405N

TYPICAL PERFORMANCE CURVES

200

VGS = 6 V to 10 V

175

150

125

100

75

50

DRAIN CURRENT (AMPS)

D,

I

25

0

13 759

0

2

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

4

610

Figure 1. On−Region Characteristics

0.01

0.009

0.008

0.007

0.006

0.005

0.004

DRAIN−TO−SOURCE RESISTANCE ()

0.003 36

DS(on),

R

4

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

759

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

TJ = 25°C

5.5 V

125

VDS ≥ 10 V

100

5 V

75

4.5 V

50

4 V

3.5 V

DRAIN CURRENT (AMPS)

25

D,

I

TJ = 125°C

TJ = 25°C

0

8

12

3

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.01

ID = 40 A T

= 25°C

J

0.009

TJ = 25°C

0.008

0.007

0.006

0.005

0.004

0.003

DRAIN−TO−SOURCE RESISTANCE ()

0.002

86555

10

DS(on),

R

25 11535 45

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = −55°C

4

VGS = 5 V

VGS = 10 V

5

8670

10515 75 85 95

2

ID = 40 A V

= 10 V

GS

1.8

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

Figure 5. On−Resistance Variation with

75

50 175

125100

TJ, JUNCTION TEMPERATURE (°C)

Temperature

100000

10000

1000

, LEAKAGE (nA)

100

DSS

I

10

150

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3

VGS = 0 V

TJ = 175°C

TJ = 100°C

15 35 40

V

DS

20

302510

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTB5405N

TYPICAL PERFORMANCE CURVES

8000

VDS = 0 V VGS = 0 V

7000

C

iss

TJ = 25°C

6000

5000

C

4000

3000

2000

C, CAPACITANCE (pF)

rss

C

iss

C

oss

1000

C

0

V

GSVDS

rss

201010

30

40

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 32 V I

= 40 A

D

= 10 V

V

GS

t

100

t

d(off)

t, TIME (ns)

10

1

1 10 100

f

t

r

t

d(on)

R

, GATE RESISTANCE (OHMS)

G

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

12

10 30

V

8

DS

QT

V

GS

6

Q

GS

Q

GD

4

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

V

2

0

20 40 60

10 30

, TOTAL GATE CHARGE (nC)

Q

G

ID = 40 A

= 25°C

T

J

7050

80

Figure 8. Gate−To−Source and

Drain−To −Source Voltage vs. Total Charge

40

VGS = 0 V

35

T

= 25°C

J

30

25

20

15

10

, SOURCE CURRENT (AMPS)

S

5

I

0

0.4 0.70.5

V

SD

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.80.6

0.9 1

Figure 10. Diode Forward Voltage vs. Current

90

36

24

18

12

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6

0

1000

10 s

100

10 ms

1 ms

100 s

dc

10

VGS = 20 V Single Pulse TC = 25°C

, DRAIN CURRENT (A)

1

D

I

R

DS(on)

Limit

Thermal Limit

0.1

0.1 10 100

Package Limit

1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

800

700

600

500

400

300

200

AVALANCHE ENERGY (mJ)

100

0

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4

ID = 40 A

25 50 75 100 125 150 175

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

1.0

NTB5405N

TYPICAL PERFORMANCE CURVES

D = 0.5

0.2

0.1

0.02

(NORMALIZED)

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.1

0.05

SINGLE PULSE

0.01

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

t, TIME (s)

Figure 13. Thermal Response

R

(t) = r(t) R



JC



JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

2

(pk)

1

R

(t)



JC

1.0 100.10.010.0010.00010.00001

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5

−B−

4

231

−T−

SEATING PLANE

VARIABLE CONFIGURATION ZONE

G

M

S

D

3 PL

0.13 (0.005) T

M

R

L

M

NTB5405N

PACKAGE DIMENSIONS

D2PAK 3

CASE 418B−04

ISSUE K

C

E

V

W

A

K

H

M

B

N P

W

J

U

L

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

L

4. DRAIN

MILLIMETERSINCHES

F

VIEW W−W VIEW W−W VIEW W−W

123

F

SOLDERING FOOTPRINT*

10.49

8.38

16.155

2X

3.504

2X

1.016

5.080

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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6

NTB5405N

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTB5405N/D

7