Datasheet ntb25p06-d Datasheet

NTB25P06

s

Power MOSFET

−60 V, −27.5 A, P−Channel D2PAK

Designed for low voltage, high speed switching applications and to

withstand high energy in the avalanche and commutation modes.

Features

• Pb−Free Packages are Available

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

• Bridge Circuits

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tpv10 ms)

Drain Current

− Continuous @ T

− Single Pulse (t Total Power Dissipation @ TA = 25°C P Operating and Storage

Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25 V, VGS = 10 V,

(V

DD

I

= 20 A, L = 3 mH, RG = 25 W)

L(pk)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

v10 ms)

p

= 25°C

J

2

).

2

).

Symbol Value Unit

D

stg

JC JA JA

L

−60 V

"15 "20VVpk

27.5 80

Apk

120 W

−55 to +175

600 mJ

1.25

46.8

63.2

°C/W

260 °C

A

°C

DSS

V

GSM

I

DM

TJ, T

E

R R R

T

GS

D

AS

q

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(BR)DSS

−60 V

R

DS(on)

65 mW @ −10 V

P−Channel

G

TYP

D

S

MAXV

I

D

−27.5 A

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate

Drain

NTB

25P06G

AYWW

Drain

Source

2

1

3

2

D

CASE 418B

4

PAK

NTB25P06 = Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week

ORDERING INFORMATION

Device Package Shipping

NTB25P06 D2PAK 50 Units/Rail NTB25P06G D

NTB25P06T4 D2PAK 800/Tape & Reel NTB25P06T4G D2PAK

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD801 1/D.

2

PAK

(Pb−Free)

50 Units/Rail

800/Tape & Reel

†

June, 2006 − Rev. 3

1 Publication Order Number:

NTB25P06/D

NTB25P06

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V

= 0 V, ID = −250 mA)

GS

V

(Positive Temperature Coefficient)

Zero Gate Voltage Drain Current

= 0 V, VDS = −60 V, TJ = 25°C)

(V

GS

= 0 V, VDS = −60 V, , TJ = 150°C)

(V

GS

Gate−Body Leakage Current (VGS = ± 15 V, VDS = 0 V) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

DS

= V

ID = −250 mA)

GS,

(Negative Threshold Temperature Coefficient)

Static Drain−Source On−State Resistance

= −10 V, ID = −12.5 A)

(V

GS

= −10 V, ID = −25 A)

(V

GS

R

Forward Transconductance

= −10 V, ID = −12.5 A)

(V

DS

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance C

(VDS = −25 V, VGS = 0 V,

F = 1.0 MHz)

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t

(V

= −30 V, ID = −25 A,

DD

= −10 V RG = 9.1 W)

V

GS

Fall Time t Gate Charge

(VDS = −48 V, ID = −25 A,

V

= −10 V)

GS

BODY−DRAIN DIODE RATINGS (Note 3)

Diode Forward On−Voltage

(IS = −25 A, VGS = 0 V)

(I

= −25 A, VGS = 0 V, TJ = 150°C)

S

Reverse Recovery Time

(IS = −25 A, VGS = 0 V,

/dt = 100 A/ms)

dI

S

Reverse Recovery Stored Charge Q

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

(BR)DSS

I

DSS

GSS

V

GS(th)

DS(on)

gFS

C

iss

oss

rss

t

d(on)

r

d(off)

f

Q

T

Q

1

Q

2

V

SD

t

rr

t

a

t

b

RR

−60

−

64

−

−10

−100

− − ±100 nA

−2.0

−

−2.8

6.2

0.065

0.070

−4.0

−

0.075

0.082

− 13 −

− 1200 1680

− 345 480

− 90 180

− 14 24 ns

− 72 118 ns

− 43 68 ns

− 190 320 ns

− 33 50 nC

− 6.5 −

− 15 −

−

−1.8

−1.4

−2.5

−

− 70 −

− 50 −

− 20 −

− 0.2 −

V

mV/°C

mA

V

mV/°C

W

Mhos

pF

V

ns

mC

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2

NTB25P06

50

−I

, DRAIN CURRENT (AMPS)

R

, DRAIN−TO−SOURCE RESISTANCE (

)

R

, DRAIN−TO−SOURCE RESISTANCE

50

0

45 40

35 30

25 20

15

D

10

5 0

W

0.2

0.15

0.1

0.05

0642

VGS = −10 V

−9 V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

DS

−8 V

TJ = 25°C

−7 V

−6 V

−5.5 V

−5 V

−4.5 V

−4.2 V

810 6

, DRAIN CURRENT (AMPS)

−I

VDS ≥ 10 V

40

30

20

D

10

0

284

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

TJ = −55°C

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VGS = −10 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.095

0.085

0.075

TJ = 25°C

VGS = −10 V

VGS = −15 V

TJ = 125°C

0

DS(on)

0

10 50

−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.75 ID = −25 A

V

= −10 V

GS

1.5

1.25

1

(NORMALIZED)

0.75

0.5

DS(on)

−50 50250−25 75 125100 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

, DRAIN−TO−SOURCE RESISTANCE (W)

403020

0.065

DS(on)

R

40302010 50

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA)

DSS

−I

150

VGS = 0 V

1000

100

10

030402010 50 6

TJ = 150°C

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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3

NTB25P06

3000

2500

VDS = 0 V

C

iss

VGS = 0 V

2000

C

1500

rss

1000

C, CAPACITANCE (pF)

500

C

rss

0

10

−V

GS

5

DS

10

155020

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLT AGE

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

t

r

100

t, TIME (ns)

10

t

d(off)

t

d(on)

t

f

TJ = 25°C

C

10

8

6

iss

oss

25 0 15 2010 254

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

−V

4

2

0

25

20

15

10

Q

V

DS

Q

1

T

V

Q

2

GS

ID = −25 A T

J

Qg, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V T

= 25°C

J

= 25°C

30 35

VDD = −30 V I

= −25 A

D

= −10 V

V

1

1 10 100 0 0.750.50.25 1.25 1.75

GS

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

5

, SOURCE CURRENT (AMPS)

S

−I 0

−V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

1 1.5

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

1000

VGS = −20 V SINGLE PULSE

= 25°C

T

C

100

10

dc

10 ms

1 ms

1

, DRAIN CURRENT (AMPS)

D

−I

0.1

0.1 10 1001 25 125 1501007550

R

Limit

DS(on)

Thermal Limit Package Limit

100 ms

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

600

500

400

300

200

AVALANCHE ENERGY (mJ)

100

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

ID = −25 A

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NTB25P06

D2PAK

PACKAGE DIMENSIONS

CASE 418B−04

ISSUE J

−T−

SEATING PLANE

VARIABLE CONFIGURATION ZONE

M

−B−

G

C

E

V

4

W

231

S

K

D

3 PL

M

0.13 (0.005) T

R

M

B

N P

L

M

A

W

J

H

U

L

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89

E 0.045 0.055 1.14 1.40

F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79

J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79

L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF

P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF

S 0.575 0.625 14.60 15.88

V 0.045 0.055 1.14 1.40

MILLIMETERSINCHES

L

F

VIEW W−W VIEW W−W VIEW W−W

123

F

SOLDERING FOOTPRINT*

8.38

0.33

10.66

0.42

17.02

0.67

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

1.016

3.05

0.12

SCALE 3:1

0.04

ǒ

inches

5.08

0.20

mm

Ǔ

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5

NTB25P06

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