Datasheet nta4151p_nte4151p Datasheet

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Page 1

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89

Features

• Low R

for Higher Efficiency and Longer Battery Life

DS(on)

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain Current

(Note 1) Power Dissipation (Note 1)

Pulsed Drain Current Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s) Gate−to−Source ESD Rating −

(Human Body Model, Method 3015)

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise stated)

Steady State I

SC−75 SC−89

Steady State

tp =10 ms

SC−75 SC−89

DSS

STG

ESD 1800 V

−20 V

±6.0 V

−760 mA

mW 301 313

±1000 mA

−55 to 150

−250 mA 260 °C

°C/W 415 400

°C

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TYP ID MAXV

(BR)DSS

−20 V

DS(on)

0.26 W @ −4.5 V

0.35 W @ −2.5 V

0.49 W @ −1.8 V

P−Channel MOSFET

−760 mA

MARKING DIAGRAM

& PIN ASSIGNMENT

SC−75 / SOT−416

CASE 463

STYLE 5

SC−89

CASE 463C

xx = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Gate

Drain

xx M G

Source

September, 2006 − Rev. 5

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

1 Publication Order Number:

NTA4151P/D

Page 2

NTA4151P, NTE4151P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Zero Gate Voltage Drain Current I Gate−to−Source Leakage Current I

(BR)DSS

DSS GSS

= 0 V, V

= 0 V, I

= 0 V, V

= −250 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VGS, ID = −250 mA

= −4.5 V, I

= −2.5 V, I

= −1.8 V, I

= −10 V, I

D D D

CHARGES AND CAPACITANCES

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= −5.0 V

= −4.5 V, VDD = −10 V,

= −0.3 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td Rise Time t Turn−Off Delay Time td Fall Time t

(ON)

(OFF)

= −4.5 V, V

= −200 mA, R

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

= 0 V, I

= −250 mA −0.72 −1.1 V

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 V

= −16 V −1.0 −100 nA

= ±4.5 V $1.0 $10

−0.45 V = −350 mA 0.26 0.36 W = −300 mA 0.35 0.45 = −150 mA 0.49 1.0

= −250 mA 0.4 S

156

28 18

2.1

0.125

0.325

0.5

= −10 V,

= 10 W

8.0

8.2 29

20.4

ORDERING INFORMATION

Device Marking Package Shipping

NTA4151PT1 TN SC−75 3000/Tape & Reel NTA4151PT1G TN SC−75

3000/Tape & Reel

(Pb−Free)

NTE4151PT1G TM SC−89

3000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 3

NTA4151P, NTE4151P

0.7

0.6

−I

DRAIN CURRENT (AMPS)

DRAIN−TO−SOURCE RESISTANCE (

)

DRAIN−TO−SOURCE

TYPICAL ELECTRICAL CHARACTERISTICS

TJ = 25°C

0.6

−1.5 V

0.5 VGS = −1.75 V to −4.5 V

0.4

0.3

−1.25 V

0.2

0.1

0 0.5 1.0 1.5 2.0 2.5 3.0

−1.0 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.6

VGS = −4.5 V

0.5

0.4

0.3

0.2

TJ = 125°C

TJ = 25°C TJ = −55°C

VDS w −10 V

0.5

0.4

0.3

0.2

DRAIN CURRENT (AMPS)

0.1

−I 0

0 0.4 0.8 1.2 1.6 2

TJ = 125°C

TJ = 25°C

TJ = −55°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.6 VGS = −2.5 V

0.5

0.4

0.3

0.2

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.6 ID = − 0.35 A

VGS = −4.5 V

1.4

1.2

1.0

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0 0.1 0.2 0.3 0.4 0.5 0.6 0

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

250

TJ = 25°C

200

ISS

150

100

C, CAPACITANCE (pF)

04812162

RSS

OSS

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Capacitance Variation

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Page 4

NTA4151P, NTE4151P

TYPICAL ELECTRICAL CHARACTERISTICS

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 1.6

−V

0.4 QG, TOTAL GATE CHARGE (nC)

0.8

1.2

Figure 7. Gate−to−Source Voltage vs. Total

Gate Charge

1.0 D = 0.5

0.2

0.1

0.05

VDS = −10 V ID = −0.3 A TA = 25°C

2.0 2.4

0.7 VGS = 0 V

0.6

0.5

0.4

0.3

0.2

, SOURCE CURRENT (AMPS)

0.1

−I 0

0 0.2 0.4 0.6 0.8 1.0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

Figure 8. Diode Forward Voltage vs. Current

0.02

0.01

SINGLE PULSE

0.001

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

Figure 9. Normalized Thermal Response

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Page 5

NTA4151P, NTE4151P

PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463−01

ISSUE F

3 PL

0.20 (0.008) D

−E−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

−D−

0.20 (0.008) E

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

DIM MIN NOM MAX

A 0.70 0.80 0.90

A1 0.00 0.05 0.10

0.15 0.20 0.30 0.006 0.008 0.012

C 0.10 0.15 0.25 D 1.55 1.60 1.65

0.70 0.80 0.90 0.027 0.031 0.035

e 1.00 BSC L 0.10 0.15 0.20

1.50 1.60 1.70

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

INCHES

MIN NOM MAX

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

0.004 0.006 0.008

0.061 0.063 0.065

SOLDERING FOOTPRINT*

0.356

0.014

1.803

0.071

0.787

0.031

0.508

0.020

1.000

0.039

SCALE 10:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Page 6

NTA4151P, NTE4151P

SC−89, 3 LEAD

CASE 463C−03

ISSUE C

−X−

−Y−

2 PL

0.08 (0.003) X

3 PL

SEATING

−T−

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.

MILLIMETERS

DIMAMIN NOM MIN NOM

1.50 1.60 1.70 0.059

B 0.75 0.85 0.95 0.030 C 0.60 0.70 0.80 0.024

D 0.23 0.28 0.33 0.009 G 0.50 BSC H 0.53 REF J 0.10 0.15 0.20 0.004 K 0.30 0.40 0.50 0.012 L 1.10 REF

M −−− −−− 10 −−−

N −−− −−− 10 −−− S 1.50 1.60 1.70 0.059

MAX MAX

INCHES

0.063 0.067

0.034 0.040

0.028 0.031

0.011 0.013

0.020 BSC

0.021 REF

0.006 0.008

0.016 0.020

0.043 REF

_ _

−−− 10

0.063 0.067

_ _

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTA4151P/D