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NST848BF3T5G
NPN General Purpose
Transistor
The NST848BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−1123
surface mount package. This device is ideal for low−power surface
mount applications where board space is at a premium.
Features
• h
, 200−450
FE
• Low V
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Collector −Emitter Voltage V
Collector −Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
THERMAL CHARACTERISTICS
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 3
Junction and Storage Temperature Range TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
, ≤ 0.25 V
CE(sat)
Rating Symbol Value Unit
CEO
CBO
EBO
C
Characteristic Symbol Max Unit
P
D
(Note 1)
R
q
JA
(Note 1)
P
D
(Note 2)
R
q
JA
(Note 2)
R
Y
JL
(Note 2)
stg
30 Vdc
30 Vdc
5.0 Vdc
100 mAdc
290
2.3
432 °C/W
347
2.8
360 °C/W
143 °C/W
−55 to
+150
mW
mW/°C
mW
mW/°C
°C
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COLLECTOR
3
1
BASE
2
EMITTER
NST848BF3T5G
3
2
1
1
SOT−1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
Y M
Y = Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
NST848BF3T5G SOT−1123
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
8000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1 Publication Order Number:
NST848BF3/D
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NST848BF3T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
= 10 mA) V
C
Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage (IC = 10 mA)
Emitter−Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz) C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
obo
ibo
T
30 − − V
30 − − V
30 − − V
5.0 − − V
−
−
−
200
−
−
−
−
580
−
−
−
150
290
−
−
0.7
0.9
660
−
15
5.0
−
450
0.25
0.6
−
−
700
770
100 − − MHz
− − 4.5 pF
− − 10 pF
NF − − 10 dB
nA
mA
−
V
V
mV
0.18
IC/IB = 10
0.16
0.14
0.12
V
CE(sat)
= 150°C
0.10
0.08
, COLLECTOR−EMITTER
0.06
SATURATION VOLTAGE (V)
CE(sat)
0.04
V
25°C
−55°C
0.02
0.0001
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
−55°C (5.0 V)
200
, DC CURRENT GAIN (V)
−55°C (1.0 V)
FE
100
h
0
0.10.010.001
0.0001 0.01
Figure 2. DC Current Gain vs. Collector Current
0.001
IC, COLLECTOR CURRENT (A)
0.1
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NST848BF3T5G
1.0
IC/IB = 10
0.9
−55°C
0.8
0.7
25°C
0.6
, BASE−EMITTER
0.5
BE(sat)
V
SATURATION VOLTAGE (V)
0.4
150°C
0.3
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
, COLLECTOR−EMITTER
0.2
SATURATION VOLTAGE (V)
CE(sat)
0.1
V
0
0.00001
30 mA
10 mA
Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)
50 mA
Figure 5. Saturation Region Figure 6. Input Capacitance
IC = 100 mA
0.10.010.0010.0001
0.010.0010.0001
1.0
0.9
0.8
0.7
0.6
VOLTAGE (V)
0.5
, BASE−EMITTER TURN−ON
0.4
BE(on)
V
0.3
7.0
6.5
6.0
5.5
5.0
4.5
4.0
, INPUT CAPACITANCE (pF)
ibo
3.5
C
3.0
VCE = 2.0 V
−55°C
25°C
150°C
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
C
ib
3.0 3.5 5.0
0.10.010.0010.0001
4.54.02.51.5 2.01.00.50
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
, OUTPUT CAPACITANCE (pF)
obo
0.9
C
0.7
C
ob
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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302520151050
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NST848BF3T5G
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA−01
ISSUE A
−X−
b1
D
−Y−
1
2
3
e
E
b
0.08 (0.0032) XY
A
c
H
E
L
SOLDERING FOOTPRINT*
0.35
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.15 0.20 0.25
b1 0.10 0.15 0.20 0.004 0.006 0.008
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
e 0.35 0.014
H
0.95 1.00 1.05
E
L 0.05 0.10 0.15
INCHES
MIN NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.002 0.004 0.006
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.30
0.25
0.90
DIMENSIONS: MILLIMETERS
0.40
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST848BF3/D
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