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NST847BDP6T5G
Dual General Purpose
Transistor
The NST847BDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
, 200−450
FE
• Low V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
MAXIMUM RATINGS
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Electrostatic Discharge HBMMMESD
THERMAL CHARACTERISTICS
Characteristic (Single Heated) Symbol Max Unit
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3) Symbol Max Unit
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
3. Dual heated values assume total power is sum of two equally powered channels.
CE(sat)
, ≤ 0.25 V
Rating Symbol Value Unit
45 Vdc
50 Vdc
6.0 Vdc
100 mAdc
2
B
240
1.9mWmW/°C
520 °C/W
280
2.2mWmW/°C
446 °C/W
350
2.8mWmW/°C
357 °C/W
420
3.4mWmW/°C
297 °C/W
−55 to
+150
2
, 1 oz. copper traces, still air.
2
, 1 oz. copper traces, still air.
CEO
CBO
EBO
C
Class
P
D
R
q
JA
P
D
R
q
JA
P
D
R
q
JA
P
D
R
q
JA
stg
°C
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(3)
Q
1
(4) (5) (6)
NST847BDP6T5G
4
5
6
2
1
1
SOT−963
CASE 527AD
PLASTIC
(1)(2)
Q
2
3
MARKING DIAGRAM
J M G
G
1
J = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
NST847BDP6T5G SOT−963
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
8000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2008
April, 2008 − Rev. 0
1 Publication Order Number:
NST847BDP6/D
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NST847BDP6T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
= 10 mA) V
C
Collector−Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector−Base Breakdown Voltage (IC = 10 mA)
Emitter−Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain (I
= 2.0 mA, VCE = 5.0 V) h
C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (I
= 10 mA, VCE = 5.0 V)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) C
Noise Figure
(I
= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
C
Symbol Min Typ Max Unit
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
obo
ibo
NF
T
45 − − V
50 − − V
50 − − V
6.0 − − V
−
−
−
−
15
5.0
nA
mA
200 290 450 −
−
−
−
−
580
−
−
−
0.7
0.9
660
−
0.25
0.6
−
−
700
770
mV
100 − − MHz
− − 4.5 pF
− − 10 pF
dB
− − 10
V
V
0.18
IC/IB = 10
0.16
0.14
0.12
V
CE(sat)
= 150°C
0.10
0.08
, COLLECTOR−EMITTER
0.06
SATURATION VOLTAGE (V)
CE(sat)
0.04
V
25°C
−55°C
0.02
0.0001
, COLLECTOR CURRENT (A)
I
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
−55°C (5.0 V)
200
, DC CURRENT GAIN (V)
−55°C (1.0 V)
FE
100
h
0
0.10.010.001
0.0001 0.01
Figure 2. DC Current Gain vs. Collector Current
0.001
IC, COLLECTOR CURRENT (A)
0.1
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NST847BDP6T5G
1.0
0.9
0.8
0.7
0.6
, BASE−EMITTER
0.5
BE(sat)
V
SATURATION VOLTAGE (V)
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
, COLLECTOR−EMITTER
0.2
SATURATION VOLTAGE (V)
CE(sat)
0.1
V
0
0.00001
IC/IB = 10
−55°C
25°C
150°C
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
IC = 100 mA
50 mA
30 mA
10 mA
Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region Figure 6. Input Capacitance
0.10.010.0010.0001
0.010.0010.0001
1.0
0.9
0.8
0.7
0.6
VOLTAGE (V)
0.5
, BASE−EMITTER TURN−ON
0.4
BE(on)
V
0.3
7.0
6.5
6.0
5.5
5.0
4.5
4.0
, INPUT CAPACITANCE (pF)
ibo
3.5
C
3.0
VCE = 2.0 V
−55°C
25°C
150°C
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
C
ib
3.0 3.5 5.0
0.10.010.0010.0001
4.54.02.51.5 2.01.00.50
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
, OUTPUT CAPACITANCE (pF)
obo
0.9
C
0.7
C
ob
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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302520151050
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NST847BDP6T5G
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE B
D
456
12 3
e
A
B
A
E
C
L
H
E
C
6X
b
B
C0.08
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.37 0.40
b 0.10 0.15 0.20
C 0.07 0.12 0.17
D 0.95 1.00 1.05
E 0.75 0.80 0.85
e 0.35 BSC
L 0.05 0.10 0.15
H
E
0.95 1.00 1.05
INCHES
MIN NOM MAX
0.004 0.006 0.008
0.003 0.005 0.007
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.35
0.014
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
SCALE 20:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST847BDP6/D
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