Page 1
NSS40601CF8T1G
40 V, 8.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor's e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•This is a Pb-Free Device
MAXIMUM RATINGS (T
Rating
Collector‐Emitter Voltage V
Collector‐Base Voltage V
Emitter‐Base Voltage V
Collector Current - Continuous I
Collector Current - Peak I
Electrostatic Discharge ESD HBM Class 3B
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead #1
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ 100 mm
2. FR-4 @ 500 mm
= 25°C)
A
2
, 1 oz copper traces.
2
, 1 oz copper traces.
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1) 830
R
(Note 1)
q
JA
PD (Note 2) 1.4
R
(Note 2)
q
JA
R
(Note 2)
q
JL
TJ, T
stg
40 Vdc
40 Vdc
6.0 Vdc
6.0 Adc
8.0 A
MM Class C
6.7
150 °C/W
11.1WmW/°C
90 °C/W
15 °C/W
-55 to
+150
CE(sat)
mW
mW/°C
°C
http://onsemi.com
40 VOLTS, 8.0 AMPS
NPN LOW V
CE(sat)
EQUIVALENT R
4
BASE
1
MARKING DIAGRAM
VB = Specific Device Code
M = Month Code
G = Pb-Free Package
PIN CONNECTIONS
81
C
7
C
6
C
5
E
ORDERING INFORMATION
Device Package Shipping
NSS40601CF8T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TRANSISTOR
DS(on)
COLLECTOR
1, 2, 3, 6, 7, 8
5
EMITTER
8
VB M
ChipFET
(Pb-Free)
CASE 1206A
G
2
3
4
ChipFET]
STYLE 4
C
C
C
B
31 mW
3000/
Tape & Reel
†
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 1
1 Publication Order Number:
NSS40601CF8/D
Page 2
NSS40601CF8T1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
= 10 mAdc, IB = 0)
(I
C
Collector-Base Breakdown Voltage
(I
= 0.1 mAdc, IE = 0)
C
Emitter-Base Breakdown Voltage
(I
= 0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= 40 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 6.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
40 - -
40 - -
6.0 - -
- - 0.1
- - 0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
= 2.0 A, VCE = 2.0 V)
(I
C
(I
= 3.0 A, VCE = 2.0 V)
C
Collector-Emitter Saturation Voltage (Note 3)
(I
= 0.1 A, IB = 0.010 A)
C
= 1.0 A, IB = 0.100 A)
(I
C
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(I
= 3.0 A, IB = 0.030 A)
C
(I
= 4.0 A, IB = 0.400 A)
C
Base-Emitter Saturation Voltage (Note 3)
(I
= 1.0 A, IB = 0.01 A)
C
Base-Emitter Turn-on Voltage (Note 3)
(I
= 2.0 A, VCE = 2.0 V)
C
Cutoff Frequency
(I
= 100 mA, VCE = 5.0 V, f = 100 MHz)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
200
200
200
200
200
-
-
-
-
-
-
-
-
395
-
-
0.008
0.031
0.060
0.075
0.100
0.090
-
-
-
-
-
0.010
0.075
0.075
0.110
0.150
0.135
- 0.760 0.900
- 0.720 0.900
f
T
140 - -
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 1200 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 100 pF
SWITCHING CHARACTERISTICS
Delay (V
= 30 V, IC = 750 mA, IB1 = 15 mA) t
CC
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
- - 110 ns
- - 130 ns
- - 1400 ns
- - 130 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
http://onsemi.com
2
Page 3
NSS40601CF8T1G
0.25
IC/IB = 10
0.2
0.15
0.1
, COLLECTOR EMITTER
0.05
SATURATION VOLTAGE (V)
CE(sat)
V
0
0.001 0.01 0.1 1 10
I
, COLLECTOR CURRENT (A)
C
V
CE(sat)
25°C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
700
650
600
550
500
450
400
350
, DC CURRENT GAIN
300
FE
h
250
200
150
0.001 0.01 0.1 1 10
25°C (5 V)
25°C (2 V)
IC, COLLECTOR CURRENT (A)
150°C (5 V)
150°C (2 V)
-55 °C (5 V)
-55 °C (2 V)
= 150°C
-55 °C
0.45
IC/IB = 100
0.4
0.35
0.3
0.25
0.2
0.15
, COLLECTOR EMITTER
0.1
SATURATION VOLTAGE (V)
CE(sat)
V
0.05
0
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
V
CE(sat)
25°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
1.20
1.00
-55 °C
0.80
, BASE EMITTER
BE(sat)
V
25°C
0.60
0.40
SATURATION VOLTAGE (V)
150°C
0.20
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
= 150°C
-55 °C
Figure 3. DC Current Gain vs.
Collector Current
1.0
VCE = 2.0 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
, BASE EMITTER TURN-ON VOLTAGE (V)
0.001 0.01 0.1 1 10
BE(on)
V
IC, COLLECTOR CURRENT (A)
-55 °C
25°C
150°C
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
, COLLECTOR-EMITTER VOLTAGE (V)
CE
V
0.0
http://onsemi.com
3
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
100 mA
10 mA
0.01 0.1 1 10 100
IB, BASE CURRENT (mA)
IC = 500 mA
300 mA
Figure 6. Saturation Region
Page 4
NSS40601CF8T1G
1050
C
(pF)
ibo
950
850
750
650
, INPUT CAPACITANCE (pF)
550
ibo
C
450
0123456
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1.0
100 mS
1.0 S
200
175
150
125
100
75
, OUTPUT CAPACITANCE (pF)
50
obo
C
25
0 5 10 15 20 25 30 35
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
1.0 mS
10 mS
C
(pF)
obo
(A)
C
I
Thermal Limit
0.1
Single Pulse Test
at T
= 25°C
amb
0.01
0.01 1.0 10 100
0.1
VCE (Vdc)
Figure 9. Safe Operating Area
http://onsemi.com
4
Page 5
e1
NSS40601CF8T1G
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A-03
D
8765
H
E
1234
b
e
q
L
E
c
ISSUE H
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
8765
1234
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
DIMAMIN NOM MAX MIN
b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42 0.011
H
E
q
STYLE 4:
PIN 1. COLLECTOR
MILLIMETERS
1.00 1.05 1.10 0.039
1.80 1.90 2.00 0.071 0.075 0.079
5° NOM
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
INCHES
NOM MAX
0.041 0.043
0.012 0.014
0.006 0.008
0.120 0.122
0.065 0.067
0.025 BSC
0.022 BSC
0.014 0.017
5° NOM
8X
2.362
0.093
0.457
0.018
1
Basic Style
SOLDERING FOOTPRINT*
2.032
0.08
0.635
0.025
2.362
0.093
PITCH
8X
0.66
0.026
ǒ
inches
mm
Ǔ
2X
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1
0.457
0.018
2.032
0.08
Styles 1 and 4
2X
0.66
0.026
1.727
0.068
ǒ
inches
mm
Ǔ
http://onsemi.com
5
Page 6
NSS40601CF8T1G
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS40601CF8/D
6
Loading...