Page 1
NSS40301MDR2G
Dual Matched 40 V, 6.0 A,
Low V
CE(sat)
These transistors are part of the ON Semiconductor e2PowerEdge
family of Low V
transistors. They are assembled to create a pair
CE(sat)
of devices highly matched in all parameters, including ultra low
saturation voltage V
CE(sat)
voltage.
Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e
2
PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
• Current Gain Matching to 10%
• Base Emitter Voltage Matched to 2 mV
• This is a Pb−Free Device
NPN Transistor
, high current gain and Base/Emitter turn on
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40 VOLTS
6.0 AMPS
NPN LOW V
CE(sat)
EQUIVALENT R
COLLECTOR
7,8
2
BASE
1
EMITTER
TRANSISTOR
DS(on)
BASE
44 mW
COLLECTOR
5,6
4
3
EMITTER
MAXIMUM RATINGS (T
Rating
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Electrostatic Discharge ESD HBM Class 3B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= 25°C)
A
Symbol Max Unit
CEO
CBO
EBO
C
CM
40 Vdc
40 Vdc
6.0 Vdc
3.0 A
6.0 A
MM Class C
8
1
SOIC−8
CASE 751
STYLE 16
DEVICE MARKING
8
N40301
AYWWG
G
1
N40301 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
NSS40301MDR2G SOIC−8
(Pb−Free)
†
2500 /
Tape & Reel
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40301MD/D
Page 2
NSS40301MDR2G
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
SINGLE HEATED
Total Device Dissipation (Note 1)
= 25°C
T
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1)
= 25°C
T
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range TJ, T
1. FR− 4 @ 10 mm2, 1 oz. copper traces, still air.
2. FR− 4 @ 100 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
P
D
R
q
JA
P
D
R
q
JA
P
D
R
q
JA
P
D
R
q
JA
stg
576
4.6
mW
mW/°C
217 °C/W
676
5.4
mW
mW/°C
185 °C/W
653
5.2
mW
mW/°C
191 °C/W
783
6.3
mW
mW/°C
160 °C/W
−55 to +150 °C
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2
Page 3
NSS40301MDR2G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
(I
= 0.1 mAdc, IE = 0)
C
Emitter−Base Breakdown Voltage
(I
= 0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= 40 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 6.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
40 − −
40 − −
6.0 − −
− − 0.1
− − 0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
= 10 mA, VCE = 2.0 V)
C
= 500 mA, VCE = 2.0 V)
(I
C
(I
= 1.0 A, VCE = 2.0 V)
C
(I
= 2.0 A, VCE = 2.0 V)
C
(I
= 2.0 A, VCE = 2.0 V) (Note 5)
C
Collector−Emitter Saturation Voltage (Note 4)
(I
= 0.1 A, IB = 0.010 A)
C
= 1.0 A, IB = 0.100 A)
(I
C
(I
= 1.0 A, IB = 0.010 A)
C
(I
= 2.0 A, IB = 0.200 A)
C
Base −Emitter Saturation Voltage (Note 4)
(I
= 1.0 A, IB = 0.01 A)
C
Base −Emitter Turn−on Voltage (Note 4)
(I
= 0.1 A, VCE = 2.0 V)
C
= 0.1 A, VCE = 2.0 V) (Note 6)
(I
C
Cutoff Frequency
(I
= 100 mA, VCE = 5.0 V, f = 100 MHz)
C
h
h
FE(1)/hFE(2)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
BE(1) −
f
FE
200
200
180
180
0.9
−
−
−
−
400
350
340
320
0.99
0.008
0.044
0.080
0.082
−
−
−
−
−
0.011
0.060
0.115
0.115
− 0.780 0.900
V
BE(2)
T
−
−
0.650
0.3
0.750
2.0
100 − −
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − 320 450 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − 40 50 pF
SWITCHING CHARACTERISTICS
Delay (V
= 30 V, IC = 750 mA, IB1 = 15 mA) t
CC
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
− − 100 ns
− − 100 ns
− − 780 ns
− − 110 ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. h
FE(1)/hFE(2)
6. V
BE(1)
is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator.
− V
is the absolute difference of one transistor compared to the other transistor within the same package.
BE(2)
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
mV
MHz
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3
Page 4
NSS40301MDR2G
TYPICAL CHARACTERISTICS
0.16
IC/IB = 10
0.14
0.12
0.10
0.08
0.06
, COLLECTOR−EMITTER
0.04
SATURATION VOLTAGE (V)
CE(sat)
0.02
V
0
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
700
150°C (2.0 V)
600
500
25°C (5.0 V)
400
25°C (2.0 V)
300
, DC CURRENT GAIN
−55°C (5.0 V)
FE
h
−55°C (2.0 V)
200
100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
150°C (5.0 V)
Figure 3. DC Current Gain vs. Collector
Current
150°C
25°C
−55°C
1010.10.010.001
, COLLECTOR−EMITTER
V
1010.10.010.001
, BASE−EMITTER
BE(sat)
V
0.30
0.25
0.20
0.15
0.10
SATURATION VOLTAGE (V)
0.05
CE(sat)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
SATURATION VOLTAGE (V)
0.3
0.2
IC/IB = 100
150°C
25°C
−55°C
0
1010.10.010.001
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
−55°C
25°C
150°C
1010.10.010.001
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
VOLTAGE (V)
, BASE−EMITTER TURN−ON
BE(on)
V
1.0
0.9
VCE = +2.0 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A)
−55°C
25°C
150°C
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VOLTAGE (V)
0.3
, COLLECTOR−EMITTER
0.2
CE(sat)
V
0.1
1010.10.010.001
0
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4
100 mA
1 A
2 A
Figure 6. Saturation Region
3 A
0.10.010.0010.0001
Page 5
NSS40301MDR2G
TYPICAL CHARACTERISTICS
400
375
350
325
300
275
250
225
, INPUT CAPACITANCE (pF)
200
ibo
C
175
150
80
70
60
50
C
(pF)
ibo
6543210
VEB, EMITTER−BASE VOLTAGE (V) Vcb, COLLECTOR−BASE VOLTAGE (V)
40
30
, OUTPUT CAPACITANCE (pF)
20
obo
C
10
C
(pF)
obo
Figure 7. Input Capacitance Figure 8. Output Capacitance
1.0
0.1
(A)
C
I
0.01
10
1 s
Thermal Limit
1 ms
10 ms
100 ms
40
35302520151050
0.001
Single Pulse Test at TA = 25°C
(Vdc)
V
CE
Figure 9. Safe Operating Area
10
1001.00.10.01
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5
Page 6
−Y−
−Z−
NSS40301MDR2G
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
Y
M
N
X 45
ISSUE AJ
K
_
M
J
−X−
A
58
B
1
S
0.25 (0.010)
4
M
G
C
SEATING
PLANE
0.10 (0.004)
H
D
0.25 (0.010) Z
M
SXS
Y
SOLDERING FOOTPRINT*
1.52
0.060
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
____
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
INCHES
7.0
0.275
0.6
0.024
4.0
0.155
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NSS40301MD/D
6
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