Page 1
NSS40201LT1G
40 V, 4.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Rating Symbol Max Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Electrostatic Discharge ESD HBM Class 3B
= 25°C)
A
CEO
CBO
EBO
C
CM
40 Vdc
40 Vdc
6.0 Vdc
2.0 A
4.0 A
MM Class C
CE(sat)
http://onsemi.com
40 VOLTS, 4.0 AMPS
NPN LOW V
CE(sat)
EQUIVALENT R
1
BASE
1
SOT−23 (TO−236)
TRANSISTOR
DS(on)
COLLECTOR
3
2
EMITTER
3
2
CASE 318
STYLE 6
44 mW
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
PD (Note 1) 460
R
(Note 1)
q
JA
PD (Note 2) 540
R
(Note 2)
q
JA
TJ, T
stg
−55 to
+150
mW
3.7
270 °C/W
4.3
230 °C/W
mW/°C
mW
mW/°C
°C
1 Publication Order Number:
MARKING DIAGRAM
VB M G
G
1
VB = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
NSS40201LT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000/Tape & Reel
NSS40201L/D
†
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NSS40201LT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
= 10 mAdc, IB = 0)
(I
C
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
40 − −
40 − −
6.0 − −
− − 0.1
− − 0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector − Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
Base − Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
Base − Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
200
200
180
180
−
−
−
−
−
370
−
−
0.006
0.044
0.085
0.082
−
−
−
−
0.011
0.060
0.115
0.115
− 0.760 0.900
− 0.760 0.900
f
T
150 − −
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 45 pF
SWITCHING CHARACTERISTICS
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
− − 100 ns
− − 100 ns
− − 750 ns
− − 110 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
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NSS40201LT1G
TYPICAL CHARACTERISTICS
0.25
IC/IB = 10
0.2
0.15
0.1
, COLLECTOR EMITTER
0.05
SATURATION VOLTAGE (V)
CE(sat)
V
0
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
700
600
500
400
, DC CURRENT GAIN
300
FE
h
200
100
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
150°C
−55°C
25°C
0.35
0.3
0.25
0.2
0.15
, COLLECTOR EMITTER
0.1
SATURATION VOLTAGE (V)
CE(sat)
0.05
V
1010.10.010.001
1.1
1.0
0.9
0.8
0.7
, BASE EMITTER
0.6
0.5
BE(sat)
V
SATURATION VOLTAGE (V)
0.4
1010.10.010.001
0.3
IC/IB = 100
0
150°C
−55°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
−55°C
25°C
150°C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
25°C
1010.10.010.001
1010.10.010.001
VOLTAGE (V)
, BASE EMITTER TURN−ON
BE(on)
V
1.0
VCE = 2.0 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
−55°C
25°C
150°C
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
, COLLECTOR−EMITTER VOLTAGE (V)
0
CE
V
1010.10.010.001
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3
10 mA
100 mA
Figure 6. Saturation Region
IC = 500 mA300 mA
1001010.10.01
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NSS40201LT1G
TYPICAL CHARACTERISTICS
400
375
350
325
300
275
250
225
, INPUT CAPACITANCE (pF)
ibo
200
C
175
80
C
ibo(pF)
6543210
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
70
60
50
40
30
, OUTPUT CAPACITANCE (pF)
20
obo
C
10
C
Figure 7. Input Capacitance Figure 8. Output Capacitance
10
100 ms
1 s
1
10 ms
1 ms
obo(pF)
35302520151050
0.1
Single Pulse Test
, COLLECTOR CURRENT (A)
C
I
0.01
at T
amb
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
Thermal Limit
= 25°C
1001010.10.01
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Page 5
A
l
A1
NSS40201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
H
SEE VIEW C
E
c
0.25
q
L
L1
VIEW C
3
E
12
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 6:
PIN 1. BASE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
mm
ǒ
inches
Ǔ
PUBLICATION ORDERING INFORMATION
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5
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Sales Representative
NSS40201L/D
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