Page 1
NSS20601CF8T1G
20 V, 8.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor's e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•This is a Pb-Free Device
MAXIMUM RATINGS (T
Rating
Collector‐Emitter Voltage V
Collector‐Base Voltage V
Emitter‐Base Voltage V
Collector Current - Continuous I
Collector Current - Peak I
Electrostatic Discharge ESD HBM Class 3B
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead #1
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ 100 mm
2. FR-4 @ 500 mm2, 1 oz copper traces.
= 25°C)
A
2
, 1 oz copper traces.
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1) 830
R
(Note 1)
q
JA
PD (Note 2) 1.4
R
(Note 2)
q
JA
R
(Note 2)
q
JL
TJ, T
stg
20 Vdc
20 Vdc
6.0 Vdc
6.0 Adc
8.0 A
MM Class C
6.7
150 °C/W
11.1WmW/°C
90 °C/W
15 °C/W
-55 to
+150
CE(sat)
mW
mW/°C
°C
http://onsemi.com
20 VOLTS, 8.0 AMPS
NPN LOW V
CE(sat)
EQUIVALENT R
4
BASE
8
1
MARKING DIAGRAM
VD= Specific Device Code
M = Month Code
G = Pb-Free Package
PIN CONNECTIONS
81
C
7
C
6
C
5
E
ORDERING INFORMATION
Device Package Shipping
NSS20601CF8T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
TRANSISTOR
5
STYLE 4
C
2
C
3
C
4
B
31 mW
DS(on)
COLLECTOR
1, 2, 3, 6, 7, 8
EMITTER
ChipFET]
CASE 1206A
VD M
G
ChipFET
(Pb-Free)
3000/
Tape & Reel
†
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 1
1 Publication Order Number:
NSS20601CF8/D
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NSS20601CF8T1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
= 10 mAdc, IB = 0)
(I
C
Collector-Base Breakdown Voltage
(I
= 0.1 mAdc, IE = 0)
C
Emitter-Base Breakdown Voltage
(I
= 0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= 20 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 6.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
20 - -
20 - -
6.0 - -
- - 0.1
- - 0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
= 2.0 A, VCE = 2.0 V)
(I
C
(I
= 3.0 A, VCE = 2.0 V)
C
Collector-Emitter Saturation Voltage (Note 3)
(I
= 0.1 A, IB = 0.010 A)
C
= 1.0 A, IB = 0.100 A)
(I
C
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.020 A)
(I
= 3.0 A, IB = 0.030 A)
C
(I
= 4.0 A, IB = 0.400 A)
C
Base-Emitter Saturation Voltage (Note 3)
(I
= 1.0 A, IB = 0.01 A)
C
Base-Emitter Turn-on Voltage (Note 3)
(I
= 2.0 A, VCE = 2.0 V)
C
Cutoff Frequency
(I
= 100 mA, VCE = 5.0 V, f = 100 MHz)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
200
200
200
200
200
-
-
-
-
-
-
-
-
365
-
-
0.007
0.031
0.060
0.090
0.110
0.110
-
-
-
-
-
0.010
0.065
0.080
0.110
0.130
0.130
- 0.760 0.900
- 0.720 0.900
f
T
140 - -
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 1100 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 100 pF
SWITCHING CHARACTERISTICS
Delay (V
= 15 V, IC = 750 mA, IB1 = 15 mA) t
CC
Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
- - 110 ns
- - 130 ns
- - 850 ns
- - 130 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
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NSS20601CF8T1G
TYPICAL CHARACTERISTICS
0.25
IC/IB = 10
0.20
0.15
0.10
, COLLECTOR EMITTER
0.05
SATURATION VOLTAGE (V)
CE(sat)
V
0
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
650
600
550
500
450
400
350
300
, DC CURRENT GAIN
FE
h
250
200
150
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
-55 °C (5.0 V)
-55 °C (2.0 V)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
25°C
150°C
-55 °C
0.30
0.25
0.20
0.15
0.10
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.05
CE(sat)
V
1010.10.010.001
1.3
1.2
1.1
1.0
0.9
0.8
0.7
, BASE EMITTER
0.6
BE(sat)
V
0.5
SATURATION VOLTAGE (V)
0.4
1010.10.010.001
0.3
IC/IB = 100
25°C
0
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
-55 °C
25°C
150°C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
150°C
-55 °C
1010.10.010.001
1010.10.010.001
1.1
1.0
VCE = 2.0 V
0.9
0.8
0.7
0.6
VOLTAGE (V)
0.5
, BASE EMITTER TURN-ON
0.4
0.3
BE(on)
V
0.2
-55 °C
25°C
150°C
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
, COLLECTOR-EMITTER VOLTAGE (V)
0
CE
V
1010.10.010.001
http://onsemi.com
3
10 mA
100 mA
Figure 6. Saturation Region
IC = 500 mA
300 mA
1001010.10.01
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NSS20601CF8T1G
TYPICAL CHARACTERISTICS
1000
950
900
850
800
750
700
650
600
, INPUT CAPACITANCE (pF)
550
ibo
C
500
450
140
C
(pF)
ibo
54
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
63210
130
120
110
100
90
80
70
, OUTPUT CAPACITANCE (pF)
obo
60
C
50
C
(pF)
obo
151050
Figure 7. Input Capacitance Figure 8. Output Capacitance
10
(A)
C
I
0.1
1.0 S
1
100 mS
Thermal Limit
1.0 mS
10 mS
2520
Single Pulse Test
at T
= 25°C
amb
0.01
0.01 1 10 100
0.1
VCE (Vdc)
Figure 9. Safe Operating Area
http://onsemi.com
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NSS20601CF8T1G
PACKAGE DIMENSIONS
ChipFETt
CASE 1206A-03
ISSUE H
e1
D
8765
H
E
1234
b
e
q
L
E
c
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
8765
1234
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
DIMAMIN NOM MAX MIN
b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42 0.011
H
E
q
STYLE 4:
PIN 1. COLLECTOR
MILLIMETERS
1.00 1.05 1.10 0.039
1.80 1.90 2.00 0.071 0.075 0.079
5° NOM
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
INCHES
NOM MAX
0.041 0.043
0.012 0.014
0.006 0.008
0.120 0.122
0.065 0.067
0.025 BSC
0.022 BSC
0.014 0.017
5° NOM
SOLDERING FOOTPRINT*
2.032
1
0.08
1
2.032
0.08
8X
2.362
0.093
0.457
0.018
0.635
0.025
2.362
0.093
PITCH
8X
0.66
0.026
ǒ
inches
mm
Ǔ
0.457
2X
0.018
Basic Style
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
Styles 1 and 4
2X
0.66
0.026
1.727
0.068
ǒ
inches
mm
Ǔ
Page 6
NSS20601CF8T1G
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
NSS20601CF8/D
6
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