Page 1
NSS20200W6
20 V, 3.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (T
Rating
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
= 25°C
T
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 4 @ 100 mm
2. FR− 4 @ 500 mm
= 25°C)
A
2
, 1 oz. copper traces.
2
, 1 oz. copper traces.
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1) 426
R
(Note 1)
q
JA
PD (Note 2) 555
R
(Note 2)
q
JA
TJ, T
stg
−20 Vdc
−20 Vdc
−7.0 Vdc
−2.0 A
−3.0 A
3.4
293 °C/W
4.4
225 °C/W
−55 to
+150
CE(sat)
mW
mW/°C
mW
mW/°C
°C
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−20 VOLTS, 3.0 AMPS
PNP LOW V
CE(sat)
EQUIVALENT R
3
BASE
1
DEVICE MARKING
6
1
VC = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
NSS20200W6T1G SC−88
TRANSISTOR
DS(on)
COLLECTOR
1, 2, 5, 6
4
EMITTER
SC−88/SOT−363
CASE 419B
STYLE 20
VC M
G
(Pb−Free)
65 mW
†
3000/
Tape & Reel
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS20200W6/D
Page 2
NSS20200W6
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(I
= −0.1 mAdc, IE = 0)
C
Emitter−Base Breakdown Voltage
(I
= −0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= −20 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= −7.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
−20 − −
−20 − −
−7.0 − −
− − −0.1
− − −0.1
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
= −10 mA, VCE = −2.0 V)
C
= −500 mA, VCE = −2.0 V)
(I
C
(I
= −1.0 A, VCE = −2.0 V)
C
(I
= −2.0 A, VCE = −2.0 V)
C
Collector−Emitter Saturation Voltage (Note 3)
(I
= −0.1 A, IB = −0.010 A) (Note 4)
C
= −1.0 A, IB = −0.100 A)
(I
C
(I
= −1.0 A, IB = −0.010 A)
C
(I
= −2.0 A, IB = −0.200 A)
C
(I
= −2.0 A, IB = −0.020 A)
C
Base −Emitter Saturation Voltage (Note 3)
(I
= −1.0 A, IB = −0.01 A)
C
Base −Emitter Turn−on Voltage (Note 3)
(I
= −1.0 A, VCE = −2.0 V)
C
Cutoff Frequency
(I
= −100 mA, VCE = −5.0 V, f = 100 MHz)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
250
220
200
160
−
−
−
−
−
370
325
290
245
−0.010
−0.067
−0.102
−0.128
−0.177
−
−
−
−
−0.014
−0.092
−0.126
−0.165
−0.215
− − −0.900
− − −0.900
f
T
100 − −
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 330 pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 90 pF
SWITCHING CHARACTERISTICS
Delay (V
= −10 V, IC = 750 mA, IB1 = 15 mA) t
CC
Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) t
Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) t
Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) t
d
r
s
f
− − 65 ns
− − 100 ns
− − 320 ns
− − 125 ns
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
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2
Page 3
NSS20200W6
TYPICAL CHARACTERISTICS
0.16
0.14
0.12
0.10
0.08
0.06
, COLLECTOR−EMITTER
0.04
SATURATION VOLTAGE (V)
CE(sat)
0.02
V
IC/IB = 10
0
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
720
680
640
600
560
520
480
25°C (5.0 V)
440
400
360
25°C (2.0 V)
320
, DC CURRENT GAIN
280
FE
−55°C (5.0 V)
h
240
200
−55°C (2.0 V)
160
120
150°C (2.0 V)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
150°C (5.0 V)
Figure 3. DC Current Gain vs. Collector
Current
150°C
−55°C
25°C
1010.10.010.001
1010.10.010.001
0.20
0.18
0.16
0.14
0.12
0.10
0.08
, COLLECTOR−EMITTER
0.06
SATURATION VOLTAGE (V)
CE(sat)
0.04
V
0.02
1.1
1.0
0.9
0.8
0.7
, BASE−EMITTER
0.6
0.5
BE(sat)
V
SATURATION VOLTAGE (V)
0.4
0.3
IC/IB = 100
150°C
−55°C
25°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
−55°C
25°C
150°C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1010.10.010.001
1010.10.010.001
1.0
0.9
0.8
0.7
0.6
, BASE−EMITTER
0.5
0.4
BE(sat)
V
SATURATION VOLTAGE (V)
0.3
0.2
IC/IB = 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
−55°C
25°C
150°C
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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1.0
0.9
0.8
0.7
0.6
0.5
VOLTAGE (V)
0.4
, BASE−EMITTER TURN ON
0.3
BE(on)
V
1010.10.010.001
0.2
3
−55°C
25°C
150°C
1010.10.010.001
Figure 6. Base Emitter Turn−On Voltage vs.
Collector Current
Page 4
NSS20200W6
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VOLTAGE (V)
0.3
COLLECTOR−EMITTER
0.2
CE
V
0.1
0
150
140
130
120
110
100
90
80
70
, OUTPUT CAPACITANCE (pF)
obo
60
C
50
10 mA
1 A 2 A
100 mA
200 mA
500 mA
0.10.010.0010.00010.00001
Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)
330
310
290
270
250
230
210
190
, INPUT CAPACITANCE (pF)
170
ibo
C
150
130
Figure 7. Saturation Region Figure 8. Input Capacitance
10
C
(pF)
obo
1
0.1
Thermal Limit
0.01
, COLLECTOR CURRENT (A)
87651312 1514
Vcb, COLLECTOR BASE VOLTAGE (V)
1110943210
Figure 9. Output Capacitance
C
I
0.001
Single Pulse Test @ TA = 25°C
1 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
C
(pF)
ibo
6543210
1 ms
10 ms
100 ms
1 s
100.10.01
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Page 5
NSS20200W6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
D
e
654
H
E
123
−E−
b
6 PL
MM
E0.2 (0.008)
A3
A
ISSUE W
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b 0.10 0.21 0.30
C 0.10 0.14 0.25
D 1.80 2.00 2.20
E 1.15 1.25 1.35
e 0.65 BSC
L 0.10 0.20 0.30
H
STYLE 20:
0.20 REF 0.008 REF
2.00 2.10 2.20
E
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
INCHES
MIN NOM MAX
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
ǒ
inches
0.025
mm
Ǔ
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
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NSS20200W6/D
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