Page 1
NSS1C201LT1G
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low V
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Rating
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 4 @ 100 mm
2. FR− 4 @ 500 mm
= 25°C)
A
2
, 1 oz. copper traces.
2
, 1 oz. copper traces.
Symbol Max Unit
CEO
CBO
EBO
C
CM
PD (Note 1) 490
R
(Note 1)
q
JA
PD (Note 2) 710
R
(Note 2)
q
JA
TJ, T
stg
100 Vdc
140 Vdc
7.0 Vdc
2.0 A
3.0 A
3.7
255 °C/W
4.3
176 °C/W
−55 to
+150
CE(sat)
mW
mW/°C
mW
mW/°C
°C
http://onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW V
CE(sat)
1
BASE
1
SOT−23 (TO−236)
MARKING DIAGRAM
1
VT = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
NSS1C201LT1G SOT−23
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Pb−Free)
TRANSISTOR
COLLECTOR
3
2
EMITTER
3
2
CASE 318
STYLE 6
VT MG
G
†
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 2
1 Publication Order Number:
NSS1C201L/D
Page 2
NSS1C201LT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(I
= 0.1 mAdc, IE = 0)
C
Emitter−Base Breakdown Voltage
(I
= 0.1 mAdc, IC = 0)
E
Collector Cutoff Current
(V
= 140 Vdc, IE = 0)
CB
Emitter Cutoff Current
(V
= 6.0 Vdc)
EB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
100
140
7.0
100
50
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
= 500 mA, VCE = 2.0 V)
(I
C
(I
= 1.0 A, VCE = 2.0 V)
C
(I
= 2.0 A, VCE = 2.0 V)
C
Collector−Emitter Saturation Voltage (Note 3)
(I
= 0.1 A, IB = 0.01 A)
C
= 0.5 A, IB = 0.05 A)
(I
C
(I
= 1.0 A, IB = 0.100 A)
C
(I
= 2.0 A, IB = 0.200 A)
C
Base − Emitter Saturation Voltage (Note 3)
(I
= 1.0 A, IB = 0.100 A)
C
Base − Emitter Turn−on Voltage (Note 3)
(I
= 1.0 A, VCE = 2.0 V)
C
Cutoff Frequency
(I
= 100 mA, VCE = 5.0 V, f = 100 MHz)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
150
120
240 360
80
40
0.030
0.060
0.090
0.150
0.950
0.850
f
T
110
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 230 pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 14 pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Vdc
Vdc
Vdc
nAdc
nAdc
V
V
V
MHz
0.8
0.7
0.6
0.5
0.4
0.3
0.2
, POWER DERATING (W)
D
P
0.1
0
TYPICAL CHARACTERISTICS
Note 2
Note 1
140120100806040200
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
Page 3
NSS1C201LT1G
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
, DC CURRENT GAIN
100
FE
h
50
0
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
IC/IB = 10
0.1
150°C
25°C
−55°C
25°C
VCE = 2 V
150°C
400
350
300
250
200
150
, DC CURRENT GAIN
100
FE
h
50
1010.10.010.001
0.1
0
1
IC/IB = 20
150°C
25°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
150°C
25°C
VCE = 4 V
1010.10.010.001
SATURATION (V)
, COLLECTOR−EMITTER
CE(sat)
V
0.01
1.2
1.0
0.8
0.6
0.4
, BASE−EMITTER SATURATION (V)
0.2
BE(sat)
V
−55°C
, COLLECTOR CURRENT (A)
I
C
Figure 4. Collector−Emitter Saturation Voltage
IC/IB = 10
−55°C
25°C
150°C
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
−55°C
, COLLECTOR−EMITTER SATURATION (V)
0.01
1010.10.010.001
CE(sat)
V
, COLLECTOR CURRENT (A)
I
C
1010.10.010.001
Figure 5. Collector−Emitter Saturation Voltage
1.2
IC/IB = 50
1.0
−55°C
0.8
0.6
0.4
, BASE−EMITTER SATURATION (V)
0.2
BE(sat)
V
1010.10.010.001
I
, COLLECTOR CURRENT (A)
C
25°C
150°C
1010.10.010.001
Figure 7. Base−Emitter Saturation Voltage
http://onsemi.com
3
Page 4
NSS1C201LT1G
TYPICAL CHARACTERISTICS
1.2
VCE = 2 V
1.0
0.8
0.6
, BASE−EMITTER VOLTAGE (V)
0.4
BE(on)
V
0.2
400
350
300
250
200
150
100
, INPUT CAPACITANCE (pF)
IB
50
C
0
−55°C
25°C
150°C
IC, COLLECTOR CURRENT (A)
Figure 8. Base Emitter Voltage
TJ = 25°C
f
TEST
V
, EMITTER BASE VOLTAGE (V)
EB
Figure 10. Input Capacitance
= 1 MHz
76543210
1010.10.010.001
8
1
0.1
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
CE(sat)
V
0.01
50
45
40
35
30
25
20
15
10
, OUTPUT CAPACITANCE (pF)
OB
5
C
0
2 A
3 A
1 A
0.5 A
IC = 0.1 A
IB, BASE CURRENT (A)
Figure 9. Collector Saturation Region
TJ = 25°C
f
= 1 MHz
TEST
60 70 100
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
10.10.010.0010.0001
908050403020100
140
TJ = 25°C
120
f
= 1 MHz
TEST
= 2 V
V
CE
100
80
60
40
20
, CURRENT GAIN BANDWIDTH (MHz)
Ta u
0
f
I
, COLLECTOR CURRENT (A)
C
Figure 12. Current−Gain Bandwidth Product
10
1
0.1
, COLLECTOR CURRENT (A)
C
I
0.01
10.10.010.001
http://onsemi.com
4
10 mS
100 mS
1 mS
Thermal Limit
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
1001010.1
Page 5
NSS1C201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
STYLE 6:
PIN 1. BASE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
E
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
mm
ǒ
inches
Ǔ
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NSS1C201L/D
Loading...