
NSR0320MW2T1G,
NSVR0320MW2T1G,
NSR0320MW2T3G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Features
Low Forward Voltage − 0.24 Volts (Typ) @ I
High Current Capability
ESD Rating:
Human Body Model: CLASS 3B
Machine Model: C
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
Rating
Reverse Voltage V
Peak Revese Voltage V
Forward Power Dissipation
@ T
= 25C
A
Derate above 25C
Forward Current (DC)
Continuous
Forward Current
t = 8.3 ms Half Sinewave
Junction Temperature Range T
Storage Temperature Range T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= 125C unless otherwise noted)
J
Symbol Value Unit
R
RM
P
F
I
F
I
F
J
stg
= 10 mAdc
F
20 Vdc
23 V
200
2.0
1
5
−55 to +125 C
−55 to +150 C
mW
mW/C
A
A
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HIGH CURRENT
SCHOTTKY BARRIER DIODE
SOD−323
CASE 477
STYLE 1
1
CATHODE
MARKING DIAGRAM
RD MG
RD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
NSR0320MW2T1G SOD−323
(Pb−Free)
NSVR0320MW2T1G SOD−323
(Pb−Free)
NSR0320MW2T3G SOD−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2
ANODE
G
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
Publication Order Number:
NSR0320MW2T1/D

NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25C unless otherwise noted)
A
Symbol Min Typ Max Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 15 V) I
Reverse Leakage (VR = 2.0 V @ 85C) I
Reverse Leakage (VR = 15.0 V @ 85C) I
Forward Voltage (IF = 10 mA) V
Forward Voltage (IF = 100 mA) V
Forward Voltage (IF = 900 mA) V
1000
10000
1000
100
150C
100
10
IF, FORWARD CURRENT (mA)
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
25C
85C
−45C
−55C
10
IR, REVERSE CURRENT (mA)
1
0 5 10 15 20 25
VF, FORWARD VOLTAGE (V)
T
R
R
R
F
F
F
150C
125C
− 25 29 pF
− 10 50
− 200 300
− 450 1000
− 0.24 0.27 V
− 0.30 0.35 V
− 0.45 0.50 V
85C
25C
VR, REVERSE VOLTAGE (V)
mA
mA
mA
Figure 1. Forward Voltage
140
120
100
80
60
40
CT, CAPACITANCE (pF)
20
0
0 5 10 15 20
Figure 2. Leakage Current
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2

C
NOTE 3
NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b 0.25 0.32 0.4
C 0.089 0.12 0.177
D 1.60 1.70 1.80
E 1.15 1.25 1.35
0.08
L
H
2.30 2.50 2.70
E
STYLE 1:
PIN 1. CATHODE
2. ANODE
0.031 0.035 0.040
0.000 0.002 0.004
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
1
L
NOTE 5
H
E
D
E
2b
A3
A
A1
INCHES
MIN NOM MAX
0.006 REF
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSR0320MW2T1/D