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NSL12AWT1G
High Current Surface Mount
PNP Silicon Low V
CE(sat)
Transistor for Battery
Operated Applications
Features
• High Current Capability (3 A)
• High Power Handling (Up to 650 mW)
• Low V
• Small Size
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (T
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge ESD HBM Class 3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 6
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
1. FR− 4, Minimum Pad, 1 oz Coverage
2. FR− 4, 1″ Pad, 1 oz Coverage
(170 mV Typical @ 1 A)
CE(s)
= 25°C)
A
Rating
Characteristic Symbol Max Unit
Symbol Max Unit
CEO
CBO
EBO
I
C
I
CM
PD (Note 1) 450
R
(Note 1)
q
JA
PD (Note 2) 650
R
(Note 2)
q
JA
R
q
JL
PD Single 1.4 W
TJ, T
stg
−12 Vdc
−12 Vdc
−5.0 Vdc
−2.0
−3.0
MM Class C
3.6
275 °C/W
5.2
192 °C/W
105 °C/W
−55 to +150 °C
Adc
mW
mW/°C
mW
mW/°C
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12 VOLTS
3.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
SC−88/SOT−363
1
MARKING DIAGRAM
6
1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
CASE 419B
STYLE 20
11 M G
G
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
1 Publication Order Number:
NSL12AW/D
Page 2
NSL12AWT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage, (I
= −10 mAdc, IB = 0) V
C
Collector− Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V
Emitter− Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V
Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) I
Collector−Emitter Cutoff Current, (V
Emitter Cutoff Current, (V
= −5.0 Vdc, IE = 0) I
CES
= −12 Vdc, IE = 0) I
CES
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
= −0.5 A, VCE = −1.5 V)
C
= −0.8 A, VCE = −1.5 V)
(I
C
(I
= −1.0 A, VCE = −1.5 V)
C
Collector− Emitter Saturation Voltage (Note 3)
(I
= −0.5 A, IB = −10 mA)
C
= −0.8 A, IB = −16 mA)
(I
C
(I
= −1.0 A, IB = −20 mA)
C
Base − Emitter Saturation Voltage (Note 3)
(I
= −1.0 A, IB = −20 mA)
C
Base − Emitter Turn−on Voltage (Note 3)
(I
= −1.0 A, VCE = −1.5 V)
C
Cutoff Frequency
(I
= −100 mA, VCE = −5.0 V, f = 100 MHz)
C
Output Capacitance
(V
= −1.5 V, f = 1.0 MHz)
CB
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%
Symbol Min Typ Max Unit
(BR)CEO
(BR)CBO
(BR)EBO
CBO
CES
EBO
h
FE
V
CE(sat)
V
BE(sat)
−12 −15 − Vdc
−12 −25 − Vdc
−5.0 −7.0 − Vdc
− −0.02 −0.1
− −0.03 −0.1
− −0.03 −0.1
100
100
100
180
165
160
−
300
−
mAdc
mAdc
mAdc
V
−
−
−
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
V
− −0.84 −0.95
V
BE(on)
V
− −0.81 −0.95
f
T
MHz
− 100 −
C
obo
pF
− 50 65
ORDERING INFORMATION
Device Package Shipping
NSL12AWT1G SOT−363
3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0.5
0.4
0.5
0.4
2 A
0.3
0.2
0.1
, COLLECTOR EMITTER VOLTAGE (V)
CE
0
V
1
IC = 100 mA
1 A
800 mA
500 mA
I
, BASE CURRENT (mA)
B
10010
0.3
0.2
0.1
, COLLECTOR EMITTER VOLTAGE (V)
0
CE
V
0.001 0.1 1
0.01
I
, COLLECTOR CURRENT (AMPS)
C
†
IC/IB = 100
IC/IB = 10
Figure 1. Collector Emitter Voltage vs Base Current Figure 2. Collector Emitter Voltage vs Collector Current
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NSL12AWT1G
400
125°C
300
25°C
200
, DC CURRENT GAIN
FE
100
h
TA = −55°C
0
0.001
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector
Current
1.0
0.9
VCE = 1.5 V
IC/IB = 10
1.0
0.9
TA = −55°C
0.8
0.7
25°C
0.6
0.5
125°C
, BASE EMITTER VOLTAGE (V)
0.4
BE
V
0.3
10.10.01
0.001 0.10.01 1
IC, COLLECTOR CURRENT (AMPS)
VCE = 1.5 V
Figure 4. Base Emitter Voltage versus
Collector Current
10
dc
1
1 s
1 ms10 ms100 ms
0.8
0.7
, BASE EMITTER SATURATION VOLTAGE (V)
0.6
BE(sat)
V
, COLLECTOR CURRENT (AMPS)
I
C
Figure 5. Base Emitter Saturation Voltage
versus Base Current
1
D = 0.50
D = 0.20
D = 0.10
0.1
D = 0.05
D = 0.02
D = 0.01
0.01
SINGLE PULSE
r(t), MINIMUM PAD NORMALIZED
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 1000
0.1
IC/IB = 100
10.010.001
0.1
, COLLECTOR CURRENT (A)
C
I
t, TIME (s)
SINGLE PULSE TA = 25°C
0.01
0.1 101
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 6. Safe Operating Area
1000.00001
Figure 7. Normalized Thermal Response
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NSL12AWT1G
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
e
654
H
E
123
−E−
b
A
6 PL
MM
E0.2 (0.008)
A3
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
DIM MIN NOM MAX
A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b 0.10 0.21 0.30
C 0.10 0.14 0.25
D 1.80 2.00 2.20
E 1.15 1.25 1.35
e 0.65 BSC
L 0.10 0.20 0.30
H
STYLE 20:
0.20 REF 0.008 REF
2.00 2.10 2.20
E
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
INCHES
MIN NOM MAX
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
ǒ
inches
0.025
mm
Ǔ
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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For additional information, please contact your local
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NSL12AW/D
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