Datasheet NSD914XV2T1 Datasheet (ON Semiconductor)

NSD914XV2T1

l

n

l

Preferred Device

High−Speed
Switching Diode

Features

• High−Speed Switching Applications

• Lead Finish: 100% Matte Sn (Tin)

• Qualified Maximum Reflow Temperature: 260°C

• Extremely Small SOD−523 Package

• Pb−Free Package is Available

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1

CATHODE

2

ANODE

MAXIMUM RATINGS (T

Reverse Voltage V
Forward Current I
Peak Forward Surge Current I

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C)

A

Rating Symbol Max Unit

R

F

FM(surge)

100 V
200 mAdc
500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board (Note 1)

TA = 25°C
Derate above 25°C

Thermal Resistance

Junction-to-Ambient

Junction and Storage Temperature TJ, T

1. FR−4 @ Minimum Pad.

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IBR = 100 mAdc)

Reverse Voltage Leakage Current

(VR = 20 Vdc)
(VR = 75 Vdc)

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

Forward Voltage

(IF = 10 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc)

P

D

R

q

JA

V

(BR)

I

R

C

D

V

F

t

rr

200

1.57mWmW/°C
635 °C/W

150 °C

stg

100 − Vdc

−−25

5.0

− 4.0 pF

− 1.0 Vdc

− 4.0 ns

nAdc
mAdc

2

1

SOD−523

CASE 502

PLASTIC

5D = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

MARKING
DIAGRAM

5D MG

12

G

ORDERING INFORMATION

Device Package Shipping†

NSD914XV2T1 SOD−523 3000/Tape & Ree
NSD914XV2T1G SOD−523

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

3000/Tape & Ree

© Semiconductor Components Industries, LLC, 2006

December, 2006 − Rev. 3

1 Publication Order Number:

NSD914XV2T1/D

+10 V

820 Ω

0.1 μF

2.0 k

100 μH

NSD914XV2T1

I

t

t

r

I

0.1 μF

F

p

10%

t

F

t

rr

t

50 Ω OUTPUT

PULSE

GENERATOR

100

10

1.0

, FORWARD CURRENT (mA)

F

I

0.1

DUT

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

Figure 1. Recovery Time Equivalent Test Circuit

TA = 85°C

TA = 25°C

VF, FORWARD VOLTAGE (VOLTS)

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

TA = −40°C

1.0 1.20.2 0.4 0.6 0.8

90%

V

R

INPUT SIGNAL

is equal to 10 mA.

R(peak)

10

1.0

m

0.1

0.01

, REVERSE CURRENT ( A)

R

I

0.001
0

i

= 1.0 mA

I

R

R(REC)

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at i

= 1.0 mA)

R(REC)

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

10 20 30 40 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward Voltage

0.68

0.64

0.60

0.56

, DIODE CAPACITANCE (pF)

D

C

0.52
0

Figure 3. Leakage Current

2.0 4.0 6.0 8.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

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2

NSD914XV2T1

SOD−523

PACKAGE DIMENSIONS

CASE 502−01

ISSUE B

12

D 2 PL

0.08 (0.003) X Y

M

J

−X−

A

−Y−

B

T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

DIM MIN NOM MAX

A 1.10 1.20 1.30
B 0.70 0.80 0.90
C 0.50 0.60 0.70
D 0.25 0.30 0.35
J 0.07 0.14 0.20
K 0.15 0.20 0.25
S 1.50 1.60 1.70

MILLIMETERS

INCHES

MIN NOM MAX

0.043 0.047 0.051

0.028 0.032 0.035

0.020 0.024 0.028

0.010 0.012 0.014

0.0028 0.0055 0.0079

0.006 0.008 0.010

0.059 0.063 0.067

C

K

S

−T−

SEATING
PLANE

SOLDERING FOOTPRINT*

1.40

0.0547

0.40

0.0157

0.0157

SCALE 10:1

0.40

mm

ǒ

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NSD914XV2T1/D

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