Datasheet nsba114ef3-d Datasheet

Page 1

NSBA114EF3T5G Series

Preferred Devices

Digital Transistors (BRT)

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−1123 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT−1123 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

• These are Halide−Free Devices

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PNP SILICON DIGITAL

TRANSISTORS

COLLECTOR

PIN 1

BASE

(INPUT)

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 3

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Base Voltage V

Collector-Emitter Voltage V

Collector Current I

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise noted)

CBO

CEO

50 Vdc

100 mAdc

SOT−1123

CASE 524AA

STYLE 1

MARKING DIAGRAM

x M

x = Device Code M = Date Code G or G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

NSBA114EFT5G SOT−1123

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

8000/Tape & Reel

†

September, 2008 − Rev. 2

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2 of this data sheet.

1 Publication Order Number:

NSBA114EF3/D

Page 2

NSBA114EF3T5G Series

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C

Thermal Resistance (Note 1) Junction-to-Ambient

Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C

Thermal Resistance (Note 2) Junction-to-Ambient

Thermal Resistance (Note 1) Junction-to-Lead 3

Junction and Storage Temperature TJ, T

1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 500 mm

, 1 oz. copper traces, still air.

ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES

Device Marking* R1 (k) R2 (k) Package Shipping

NSBA114EF3T5G F (0°) 10 10

NSBA124EF3T5G Y (0°) 22 22

NSBA144EF3T5G E (0°) 47 47

NSBA114YF3T5TG K (0°) 10 47

NSBA123TF3T5G F (90°) 2.2 ∞

NSBA143EF3T5G A (90°) 4.7 4.7

NSBA143ZF3T5G E (90°) 4.7 47

NSBA123JF3T5G J (90°) 2.2 47

NSBA144WF3T5G D (90°) 47 22

NSBA114TF3T5G L (90°) 10 ∞

NSBA115TF3T5G Q (90°) 100 ∞

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

*(XX°) = Degree rotation in the clockwise direction.

stg

SOT−1123

(Pb−Free)

254

2.0

mW/°C

493 °C/W

297

2.4

mW/°C

421 °C/W

193 °C/W

−55 to +150 °C

8000 / Tape & Reel

†

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Page 3

NSBA114EF3T5G Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0) I

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) I

Emitter−Base Cutoff Current NSBA114EF3T5G

(VEB = 6.0 V, IC = 0) NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G NSBA114TF3T5G

NSBA143EF3T5G

NSBA115T53T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain NSBA114EF3T5G

(VCE = 10 V, IC = 5.0 mA) NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA115TF3T5G/NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA114TF3T5G

Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YF3T5G/NSBA123TF3T5G/NSBA123JF3T5G NSBA144WF3T5G (IC = 10 mA, IB = 1 mA) NSBA143ZF3T5G/NSBA143EF3T5G/NSBA114TF3T5G (IC = 10 mA, IB = 5 mA) NSBA115TF3T5G

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBA114TF3T5G

NSBA114EF3T5G

NSBA124EF3T5G

NSBA114YF3T5G NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBA144EF3T5G (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBA144WF3T5G (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) NSBA115TF3T5G

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YEF3T5G/NSBA143ZF3T5G/NSBA123JF3TG NSBA144WF3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBA123TF3T5G/NSBA143EF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

CBO

CEO

EBO

(BR)CBO

(BR)CEO

CE(sat)

− − 100 nAdc

− − 500 nAdc

−

0.5

0.2

0.1

0.2

4.0

0.9

1.5

0.1

0.18

0.2

0.13

mAdc

50 − − Vdc

35 60 80 80

160

15 80 80 80

160

60 100 140 140 350

27 140 140 140 250

−

− − 0.25 Vdc

Vdc

−

0.2

4.9 − − Vdc

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Page 4

NSBA114EF3T5G Series

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Ty p Max Unit

Input Resistor NSBA114TF3T5C

Resistor Ratio

NSBA114EF3T5G/NSBA124EF3T5G/ NSBA144EF3T5G/NSBA143EF3T5G NSBA114YF3T5TG NSBA123TF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G

= 25°C unless otherwise noted) (Continued)

NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA115TF3T5G

R1 7.0

R1/R

7.0

15.4

32.9

7.0

1.5

3.3

1.54

32.9 70

0.8

0.17

−

0.055

0.038

1.7

10 10 22 47 10

2.2

4.7

2.2 47

100

1.0

0.21

−

0.1

0.047

2.1

13 13

28.6

61.1 13

2.9

6.1

2.86

61.1

130

1.2

0.25

−

0.185

0.056

2.6

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Page 5

NSBA114EF3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EF3T5G

VOLTAGE (V)

, COLLECTOR−TO−EMITTER SATURATION

CE(SAT)

1.0

IC/IB = 10

TA=25°C

TA= 150°C

0.10

TA= −55°C

0.01 0 5 10 15 20 25 30 35 40 45 50

IC, COLLECTOR CURRENT (mA)

Figure 1. V

2.4

2.2

2.0

1.8

1.6

1.4

CE(sat)

vs. I

1000

VCE = 10 V

100

150°C

25°C

, DC CURRENT GAIN

1.0

0.1 1 10 100

IC, COLLECTOR CURRENT (mA)

−55°C

Figure 2. DC Current Gain

100

150°C

1.0

−55°C

1.2

, OUTPUT CAPACITANCE (pF)

1.0

OBO

0.8 0 5 10 15 20 25 30 35 40 45 50

REVERSE BIAS VOLTAGE (V)

Figure 3. Output Capacitance

25°C

−55°C

1.0

, INPUT VOLTAGE (V)

0.1

150°C

0 5 10 15 20 25 30 35 40 45 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Input Voltage vs. Output Current

0.1

, COLLECTOR CURRENT (mA)

0.01

25°C

012345

Vin, INPUT VOLTAGE (V)

Figure 4. Output Current vs. Input Voltage

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Page 6

NSBA114EF3T5G Series

PACKAGE DIMENSIONS

SOT−1123

CASE 524AA−01

ISSUE B

−X−

−Y−

0.08 (0.0032) XY

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.34 0.37 0.40 b 0.15 0.22 0.28

b1 0.10 0.15 0.20 0.004 0.006 0.008

c 0.07 0.12 0.17 D 0.75 0.80 0.85 E 0.55 0.60 0.65 e −−− −−−−

0.35 0.40 0.014 0.016

0.95 1.00 1.05

L 0.05 0.10 0.15

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

INCHES

MIN NOM MAX

0.013 0.015 0.016

0.006 0.009 0.011

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.037 0.039 0.041

0.002 0.004 0.006

SOLDERING FOOTPRINT*

0.35

0.25

0.90

0.30

0.40

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NSBA114EF3/D