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NM93C46 Rev. E
NM93C46 1024-Bit Serial CMOS EEPROM
(MICROWIRE
TM
 Synchronous Bus)
Functional Description
A typical Microwire cycle starts by first selecting the device 
(bringing the CS signal high). Once the device is selected, a valid 
Start bit (“1”) should be issued to properly recognize the cycle. 
Following this, the 2-bit opcode of appropriate instruction should 
be issued. After the opcode bits, the 6-bit address information 
should be issued. For certain instructions, some of these 6 bits are 
don’t care values (can be “0” or “1”), but they should still be issued. 
Following the address information, depending on the instruction 
(WRITE and WRALL), 16-Bit data is issued. Otherwise, depending on the instruction (READ), the device starts to drive the output 
data on the DO line. Other instructions perform certain control 
functions and do not deal with data bits. The Microwire cycle ends 
when the CS signal is brought low. However during certain 
instructions, falling edge of the CS signal initiates an internal cycle 
(Programming), and the device remains busy till the completion of 
the internal cycle. Each of the 7 instructions is explained in detail 
in the following sections.
1) Read (READ)
READ instruction allows data to be read from a selected location 
in the memory array. Input information (Start bit, Opcode and 
Address) for this instruction should be issued as listed under 
Table1. Upon receiving a valid input information, decoding of the 
opcode and the address is made, followed by data transfer from 
the selected memory location into a 16-bit serial-out shift register. 
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB) 
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit 
(logical 0) precedes this 16-bit data output string. Output data 
changes are initiated on the rising edge of the SK clock. After 
reading the 16-bit data, the CS signal can be brought low to end 
the Read cycle. Refer 
Read cycle diagram
.
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable 
(WDS) state. Therefore, all programming operations must be 
preceded by a Write Enable (WEN) instruction. Once a Write 
Enable instruction is executed, programming remains enabled 
until a Write Disable (WDS) instruction is executed or VCC is 
completely removed from the part. Input information (Start bit, 
Opcode and Address) for this WEN instruction should be issued 
as listed under Table1. The device becomes write-enabled at the 
end of this cycle when the CS signal is brought low. Execution of 
a READ instruction is independent of WEN instruction. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in 
the memory with a specified data. This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this 
WRITE instruction should be issued as listed under Table1. After 
inputting the last bit of data (D0 bit), CS signal must be brought low 
before the next rising edge of the SK clock. This falling edge of the 
CS initiates the self-timed programming cycle. It takes tWP time 
(Refer appropriate DC and AC Electrical Characteristics table) for 
the internal programming cycle to finish. During this time, the 
device remains busy and is not ready for another instruction.
The status of the internal programming cycle can be polled at any 
time by bringing the CS signal high again, after t
CS
 interval. When 
CS signal is high, the DO pin indicates the READY/BUSY status 
of the chip. DO = logical 0 indicates that the programming is still 
in progress. DO = logical 1 indicates that the programming is 
finished and the device is ready for another instruction. It is not 
required to provide the SK clock during this status polling. While 
the device is busy, it is recommended that no new instruction be 
issued. Refer 
Write cycle diagram.
It is also recommended to follow this instruction (after the device 
becomes READY) with a Write Disable (WDS) instruction to 
safeguard data against corruption due to spurious noise, inadvertent writes etc.
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction 
except that WRALL instruction will simultaneously program all 
memory locations with the data pattern specified in the instruction. 
This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this 
WRALL instruction should be issued as listed under Table1. After 
inputting the last bit of data (D0 bit), CS signal must be brought low 
before the next rising edge of the SK clock. This falling edge of the 
CS initiates the self-timed programming cycle. It takes tWP time 
(Refer appropriate DC and AC Electrical Characteristics table) for 
the internal programming cycle to finish. During this time, the 
device remains busy and is not ready for another instruction. 
Status of the internal programming can be polled as described 
under WRITE instruction description. While the device is busy, it 
is recommended that no new instruction be issued. Refer 
Write All
cycle diagram.
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming operations and should follow all programming operations. Executing this 
instruction after a valid write instruction would protect against 
accidental data disturb due to spurious noise, glitches, inadvertent 
writes etc. Input information (Start bit, Opcode and Address) for this 
WDS instruction should be issued as listed under Table1. The 
device becomes write-disabled at the end of this cycle when the CS 
signal is brought low. Execution of a READ instruction is independent of WDS instruction. Refer 
Write Disable cycle diagram.
6) Erase (ERASE)
The ERASE instruction will program all bits in the specified 
location to a logical “1” state. Input information (Start bit, Opcode 
and Address) for this WDS instruction should be issued as listed 
under Table1. After inputting the last bit of data (A0 bit), CS signal 
must be brought low before the next rising edge of the SK clock. 
This falling edge of the CS initiates the self-timed programming 
cycle. It takes tWP time (Refer appropriate DC and AC Electrical 
Characteristics table) for the internal programming cycle to finish. 
During this time, the device remains busy and is not ready for 
another instruction. Status of the internal programming can be 
polled as described under WRITE instruction description. While 
the device is busy, it is recommended that no new instruction be 
issued. Refer 
Erase cycle diagram.