NM93C06
256-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as
16 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.
There are 7 instructions implemented on the NM93C06 for various
Read, Write, Erase, and Write Enable/Disable operations. This
device is fabricated using Fairchild Semiconductor floating-gate
CMOS process for high reliability, high endurance and low power
consumption.
“LZ” and “L” versions of NM93C06 offer very low standby current
making them suitable for low power applications. This device is
offered in both SO and TSSOP packages for small space considerations.
Functional Diagram
Features
■ Wide VCC 2.7V - 5.5V
■ Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
■ No Erase instruction required before Write instruction
■ Self timed write cycle
■ Device status during programming cycles
■ 40 year data retention
■ Endurance: 1,000,000 data changes
■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
NOTE: Pins designated as "NC" are typically unbonded pins. However some of them are bonded for special testing purposes. Hence if a signal is applied to these pins, care
should be taken that the voltage applied on these pins does not exceed the VCC applied to the device. This will ensure proper operation.
Power Supply
Ordering Information
NM93CXXLZEXXXLetter Description
PackageN8-pin DIP
Temp. RangeNone0 to 70°C
Voltage Operating RangeBlank4.5V to 5.5V
Density06256 bits
Interface93MICROWIRE
M88-pin SO
MT88-pin TSSOP
V-40 to +125°C
E-40 to +85°C
L2.7V to 5.5V
LZ2.7V to 5.5V and
<1µA Standby Current
CCMOS
CSData protect and sequential
read
Fairchild Memory Prefix
NM93C06 Rev. E
2
www.fairchildsemi.com
Page 3
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature-65°C to +150°C
All Input or Output Voltages+6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.)+300°C
Operating Conditions
Ambient Operating Temperature
NM93C060°C to +70°C
NM93C06E-40°C to +85°C
NM93C06V-40°C to +125°C
Power Supply (V
)4.5V to 5.5V
CC
ESD rating2000V
DC and AC Electrical Characteristics V
= 4.5V to 5.5V unless otherwise specified
CC
SymbolParameterConditionsMinMaxUnits
I
CCA
I
CCS
I
IL
I
OL
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
f
SK
t
SKH
t
SKL
t
SKS
t
CS
t
CSS
t
DH
t
DIS
t
CSH
t
DIH
t
PD
t
SV
t
DF
t
WP
Operating CurrentCS = VIH, SK=1.0 MHz1mA
Standby CurrentCS = V
IL
Input LeakageVIN = 0V to V
CC
50µA
±-1µA
Output Leakage(Note 2)
Input Low Voltage-0.10.8V
Input High Voltage2VCC +1
NM93C06L/LZ0°C to +70°C
NM93C06LE/LZE-40°C to +85°C
NM93C06LV/LZV-40°C to +125°C
Power Supply (V
)2.7V to 5.5V
CC
ESD rating2000V
DC and AC Electrical Characteristics V
= 2.7V to 5.5V unless otherwise specified
CC
SymbolParameterConditionsMinMaxUnits
I
CCA
I
CCS
I
IL
I
OL
V
IL
V
IH
V
OL
V
OH
f
SK
t
SKH
t
SKL
t
SKS
t
CS
t
CSS
t
DH
t
DIS
t
CSH
t
DIH
t
PD
t
SV
t
DF
t
WP
Capacitance TA = 25°C, f = 1 MHz (Note 5)
SymbolTestTypMaxUnits
C
OUT
C
IN
Operating CurrentCS = VIH, SK=1.0 MHz1mA
Standby CurrentCS = V
IL
L10µA
LZ (2.7V to 4.5V)1µA
Input LeakageVIN = 0V to V
Output Leakage(Note 2)
CC
Input Low Voltage-0.10.15V
Input High Voltage0.8V
CC
Output Low VoltageIOL = 10µA0.1V
Output High VoltageIOH = -10µA0.9V
CC
±1µA
CC
VCC +1
CC
SK Clock Frequency(Note 3)0250KHz
SK High Time1µs
SK Low Time1µs
SK Setup Time0.2µs
Minimum CS Low Time(Note 4)1µs
CS Setup Time0.2µs
DO Hold Time70ns
DI Setup Time0.4µs
CS Hold Time0ns
DI Hold Time0.4µs
Output Delay2µs
CS to Status Valid1µs
CS to DO in Hi-ZCS = V
IL
0.4µs
Write Cycle Time15ms
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Output Capacitance5pF
Input Capacitance5pF
Note 2: Typical leakage values are in the 20nA range.
Note 3: The shortest allowable SK clock period = 1/f
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both t
allowable to set 1/fSK = t
Note 4: CS (Chip Select) must be brought low (to V
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
SKHminimum
+ t
SKLminimum
(as shown under the fSK parameter). Maximum
SK
and t
limits must be observed. Therefore, it is not
SKH
SKL
for shorter SK cycle time operation.
) for an interval of tCS in order to reset all internal
This is an active high input pin to NM93C06 EEPROM (the device)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiate an internal programming after a write cycle. All activity on the
SK, DI and DO pins are ignored while CS is held low.
Serial Clock (SK)
This is an input pin to the device and is generated by the master that
is controlling the device. This is a clock signal that synchronizes the
communication between a master and the device. All input information (DI) to the device is latched on the rising edge of this clock input,
while output data (DO) from the device is driven from the rising edge
of this clock input. This pin is gated by CS signal.
Serial Input (DI)
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input information (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Serial Output (DO)
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Microwire Interface
A typical communication on the Microwire bus is made through the
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array, a set of 7 instructions are implemented on NM93C06.
The format of each instruction is listed under Table 1.
Instruction
Each of the 7 instructions is explained under individual instruction
descriptions.
Start bit
This is a 1-bit field and is the first bit that is clocked into the device
when a Microwire cycle starts. This bit has to be “1” for a valid cycle
to begin. Any number of preceding “0” can be clocked into the
device before clocking a “1”.
Opcode
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with 2 MSB of address field) select a
particular instruction to be executed.
Address Field
This is a 6-bit field and should immediately follow the Opcode bits.
In NM93C06, only the LSB bits are used for address decoding
during READ, WRITE and ERASE instructions. During these
three instructions (READ, WRITE and ERASE) the MSB 2 bits are
"don't care" (can be 0 or 1).During all other instructions, the MSB
2 bits are used to decode instruction (along with Opcode bits).
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
TM
Synchronous Bus)
Table 1. Instruction set
InstructionStart BitOpcode FieldAddress FieldData Field
READ11000A3 A2 A1 A0
WEN10011XXXX
WRITE10100A3 A2 A1 A0D15-D0
WRALL10001XXXX D15-D0
WDS10000XXXX
ERASE11100A3 A2 A1 A0
ERAL10010XXXX
NM93C06 Rev. E
5
www.fairchildsemi.com
Page 6
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (“1”) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 6-bit address information
should be issued. For certain instructions, some of these 6 bits are
don’t care values (can be “0” or “1”), but they should still be issued.
Following the address information, depending on the instruction
(WRITE and WRALL), 16-Bit data is issued. Otherwise, depending on the instruction (READ), the device starts to drive the output
data on the DO line. Other instructions perform certain control
functions and do not deal with data bits. The Microwire cycle ends
when the CS signal is brought low. However during certain
instructions, falling edge of the CS signal initiates an internal cycle
(Programming), and the device remains busy till the completion of
the internal cycle. Each of the 7 instructions is explained in detail
in the following sections.
1) Read (READ)
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. Refer
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable
(WDS) state. Therefore, all programming operations must be
preceded by a Write Enable (WEN) instruction. Once a Write
Enable instruction is executed, programming remains enabled
until a Write Disable (WDS) instruction is executed or VCC is
completely removed from the part. Input information (Start bit,
Opcode and Address) for this WEN instruction should be issued
as listed under Table1. The device becomes write-enabled at the
end of this cycle when the CS signal is brought low. Execution of
a READ instruction is independent of WEN instruction. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Read cycle diagram
.
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after t
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguard data against corruption due to spurious noise, inadvertent writes etc.
Write cycle diagram.
interval. When
CS
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memory locations with the data pattern specified in the instruction.
This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes tWP time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer
cycle diagram.
Write All
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming operations and should follow all programming operations. Executing this
instruction after a valid write instruction would protect against
accidental data disturb due to spurious noise, glitches, inadvertent
writes etc. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table1. The
device becomes write-disabled at the end of this cycle when the CS
signal is brought low. Execution of a READ instruction is independent of WDS instruction. Refer
Write Disable cycle diagram.
6) Erase (ERASE)
The ERASE instruction will program all bits in the specified
location to a logical “1” state. Input information (Start bit, Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. After inputting the last bit of data (A0 bit), CS signal
must be brought low before the next rising edge of the SK clock.
This falling edge of the CS initiates the self-timed programming
cycle. It takes tWP time (Refer appropriate DC and AC Electrical
Characteristics table) for the internal programming cycle to finish.
During this time, the device remains busy and is not ready for
another instruction. Status of the internal programming can be
polled as described under WRITE instruction description. While
the device is busy, it is recommended that no new instruction be
issued. Refer
Erase cycle diagram.
TM
Synchronous Bus)
NM93C06 Rev. E
6
www.fairchildsemi.com
Page 7
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
7) Erase All (ERAL)
The Erase all instruction will program all locations to a logical “1”
state. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table1. After
inputting the last bit of data (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer
All cycle diagram.
Note: The Fairchild CMOS EEPROMs do not require an “ERASE” or “ERASE ALL”
instruction prior to the “WRITE” or “WRITE ALL” instruction, respectively. The
“ERASE” and “ERASE ALL” instructions are included to maintain compatibility with
earlier technology EEPROMs.Clearing of Ready/Busy status
WP
Erase
time
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is ‘cleared’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer
Clearing Ready Status
diagram.
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EEPROM.
TM
Synchronous Bus)
NM93C06 Rev. E
7
www.fairchildsemi.com
Page 8
;
;
;
Timing Diagrams
SYNCHRONOUS DATA TIMING
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
CS
t
SKS
t
CSS
t
SKH
t
SKL
SK
t
DIStDIH
DI
DO (Data Read)
Valid
Input
t
SV
t
PD
Valid
Input
Valid
Output
t
DH
DO (Status Read)
NORMAL READ CYCLE (READ)
CS
SK
DI
DO
93C06:
Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined)
110A5A4A1A0
Start
Bit
Opcode
Bits(2)
High - Z
Address
Bits(6)
0
Dummy
Bit
t
PD
Valid
Output
Valid Status
D15D1D0
t
CSH
TM
Synchronous Bus)
t
DF
t
DF
t
CS
NM93C06 Rev. E
WRITE ENABLE CYCLE (WEN)
CS
SK
DI
DO
93C06:
Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
100A5A4A1A0
Start
Bit
Opcode
Bits(2)
Address
Bits(6)
High - Z
8
t
CS
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Page 9
Timing Diagrams (Continued)
WRITE DISABLE CYCLE (WDS)
CS
SK
DI
DO
93C06:
Address bits pattern -> 0-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
CS
SK
DI
DO
93C06:
Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined)
Data bits pattern -> User defined
100A5A4A1A0
Start
Opcode
Bit
Bits(2)
101A5A4A1A0D15 D14D1D0
Start
Bit
Opcode
Bits(2)
Address
Bits(6)
Address
Bits(6)
High - Z
High - Z
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
t
CS
TM
Synchronous Bus)
t
CS
t
Data
Bits(16)
WP
Busy
Ready
NM93C06 Rev. E
WRITE ALL CYCLE (WRALL)
CS
SK
DI
DO
93C06:
Address bits pattern -> 0-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
Data bits pattern -> User defined
100A5A4A1A0D15 D14D1D0
Start
Bit
Opcode
Bits(2)
Address
Bits(6)
High - Z
9
Data
Bits(16)
t
CS
t
WP
Ready
Busy
www.fairchildsemi.com
Page 10
Timing Diagrams (Continued)
ERASE CYCLE (ERASE)
CS
SK
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
t
CS
TM
Synchronous Bus)
DI
DO
93C06:
Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined)
111A5A4A1A0
Start
Bit
Opcode
Bits(2)
High - Z
Address
Bits(6)
ERASE ALL CYCLE (ERAL)
CS
SK
DI
DO
93C06:
Address bits pattern -> 1-0-x-x-x-x
111A5A4A1A0
Start
Bit
Opcode
Bits(2)
High - Z
; (x -> Don't Care, can be 0 or 1)
Address
Bits(6)
t
WP
Ready
Busy
t
CS
t
WP
Ready
Busy
NM93C06 Rev. E
CLEARING READY STATUS
CS
SK
DI
DO
Note: This Start bit can also be part of a next instruction. Hence the cycle
can be continued (instead of getting terminated, as shown) as if a new
instruction is being issued.
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
EnglishTel: +44 (0) 1793-856856Kowloon. Hong KongTokyo, 113-0034 Japan
Français Tel: +33 (0) 1-6930-3696Tel; +852-2722-8338Tel: 81-3-3818-8840
ItalianoTel: +39 (0) 2-249111-1Fax: +852-2722-8383Fax: 81-3-3818-8841
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
13
NM93C06 Rev. E
www.fairchildsemi.com
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