Datasheet NM93C06 Datasheet (Fairchild)

Page 1
查询NM93C06供应商
February 2000
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
NM93C06 256-Bit Serial CMOS EEPROM (MICROWIRE™ Synchronous Bus)
General Description
NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as 16 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat­ible to many of standard Microcontrollers and Microprocessors. There are 7 instructions implemented on the NM93C06 for various Read, Write, Erase, and Write Enable/Disable operations. This device is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption.
“LZ” and “L” versions of NM93C06 offer very low standby current making them suitable for low power applications. This device is offered in both SO and TSSOP packages for small space consid­erations.
Functional Diagram
Features
■ Wide VCC 2.7V - 5.5V
■ Typical active current of 200µA
10µA standby current typical 1µA standby current typical (L)
0.1µA standby current typical (LZ)
■ No Erase instruction required before Write instruction
■ Self timed write cycle
■ Device status during programming cycles
■ 40 year data retention
■ Endurance: 1,000,000 data changes
■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
TM
Synchronous Bus)
CS
SK
DO
V
INSTRUCTION
DECODER
CONTROL LOGIC
16
16
16 BITS
AND CLOCK
GENERATORS
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
DI
INSTRUCTION
REGISTER
ADDRESS
REGISTER
DECODER
EEPROM ARRAY
READ/WRITE AMPS
DATA IN/OUT REGISTER
DATA OUT BUFFER
CC
V
SS
NM93C06 Rev. E
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Page 2
Connection Diagram
Dual-In-Line Package (N)
8–Pin SO (M8) and 8–Pin TSSOP (MT8)
CS
SK
DI
1
2
3
8
V
CC
7
NC
6
NC
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
TM
Synchronous Bus)
DO
4
5
GND
Top View
Package Number
N08E, M08A and MTC08
Pin Names
CS Chip Select
SK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
GND Ground
NC No Connect
V
CC
NOTE: Pins designated as "NC" are typically unbonded pins. However some of them are bonded for special testing purposes. Hence if a signal is applied to these pins, care should be taken that the voltage applied on these pins does not exceed the VCC applied to the device. This will ensure proper operation.
Power Supply
Ordering Information
NM 93 C XX LZ E XXX Letter Description
Package N 8-pin DIP
Temp. Range None 0 to 70°C
Voltage Operating Range Blank 4.5V to 5.5V
Density 06 256 bits
Interface 93 MICROWIRE
M8 8-pin SO MT8 8-pin TSSOP
V -40 to +125°C E -40 to +85°C
L 2.7V to 5.5V LZ 2.7V to 5.5V and
<1µA Standby Current
C CMOS CS Data protect and sequential
read
Fairchild Memory Prefix
NM93C06 Rev. E
2
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Page 3
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
Operating Conditions
Ambient Operating Temperature
NM93C06 0°C to +70°C NM93C06E -40°C to +85°C NM93C06V -40°C to +125°C
Power Supply (V
) 4.5V to 5.5V
CC
ESD rating 2000V
DC and AC Electrical Characteristics V
= 4.5V to 5.5V unless otherwise specified
CC
Symbol Parameter Conditions Min Max Units
I
CCA
I
CCS
I
IL
I
OL
V
IL
V
IH
V
OL1
V
OH1
V
OL2
V
OH2
f
SK
t
SKH
t
SKL
t
SKS
t
CS
t
CSS
t
DH
t
DIS
t
CSH
t
DIH
t
PD
t
SV
t
DF
t
WP
Operating Current CS = VIH, SK=1.0 MHz 1 mA
Standby Current CS = V
IL
Input Leakage VIN = 0V to V
CC
50 µA
±-1 µA
Output Leakage (Note 2)
Input Low Voltage -0.1 0.8 V Input High Voltage 2 VCC +1
Output Low Voltage IOL = 2.1 mA 0.4 V Output High Voltage IOH = -400 µA 2.4
Output Low Voltage IOL = 10 µA 0.2 V Output High Voltage IOH = -10 µAV
CC
- 0.2
SK Clock Frequency (Note 3) 1 MHz
SK High Time 0°C to +70°C 250 ns
-40°C to +125°C 300
SK Low Time 250 ns
SK Setup Time 50 ns
Minimum CS Low Time (Note 4) 250 ns
CS Setup Time 100 ns
DO Hold Time 70 ns
DI Setup Time 100 ns
CS Hold Time 0 ns
DI Hold Time 20 ns
Output Delay 500 ns
CS to Status Valid 500 ns
CS to DO in Hi-Z CS = V
IL
100 ns
Write Cycle Time 10 ms
TM
Synchronous Bus)
NM93C06 Rev. E
3
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Page 4
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
Operating Conditions
Ambient Operating Temperature
NM93C06L/LZ 0°C to +70°C NM93C06LE/LZE -40°C to +85°C NM93C06LV/LZV -40°C to +125°C
Power Supply (V
) 2.7V to 5.5V
CC
ESD rating 2000V
DC and AC Electrical Characteristics V
= 2.7V to 5.5V unless otherwise specified
CC
Symbol Parameter Conditions Min Max Units
I
CCA
I
CCS
I
IL
I
OL
V
IL
V
IH
V
OL
V
OH
f
SK
t
SKH
t
SKL
t
SKS
t
CS
t
CSS
t
DH
t
DIS
t
CSH
t
DIH
t
PD
t
SV
t
DF
t
WP
Capacitance TA = 25°C, f = 1 MHz (Note 5)
Symbol Test Typ Max Units
C
OUT
C
IN
Operating Current CS = VIH, SK=1.0 MHz 1 mA
Standby Current CS = V
IL
L 10 µA LZ (2.7V to 4.5V) 1 µA
Input Leakage VIN = 0V to V Output Leakage (Note 2)
CC
Input Low Voltage -0.1 0.15V Input High Voltage 0.8V
CC
Output Low Voltage IOL = 10µA 0.1V Output High Voltage IOH = -10µA 0.9V
CC
±1 µA
CC
VCC +1
CC
SK Clock Frequency (Note 3) 0 250 KHz
SK High Time 1 µs
SK Low Time 1 µs
SK Setup Time 0.2 µs
Minimum CS Low Time (Note 4) 1 µs
CS Setup Time 0.2 µs
DO Hold Time 70 ns
DI Setup Time 0.4 µs
CS Hold Time 0 ns
DI Hold Time 0.4 µs
Output Delay 2 µs
CS to Status Valid 1 µs
CS to DO in Hi-Z CS = V
IL
0.4 µs
Write Cycle Time 15 ms
Note 1: Stress above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Output Capacitance 5 pF
Input Capacitance 5 pF
Note 2: Typical leakage values are in the 20nA range.
Note 3: The shortest allowable SK clock period = 1/f
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated in the datasheet. Within this SK period, both t allowable to set 1/fSK = t
Note 4: CS (Chip Select) must be brought low (to V device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
SKHminimum
+ t
SKLminimum
(as shown under the fSK parameter). Maximum
SK
and t
limits must be observed. Therefore, it is not
SKH
SKL
for shorter SK cycle time operation.
) for an interval of tCS in order to reset all internal
IL
AC Test Conditions
VCC Range VIL/V
Input Levels Timing Level Timing Level
IH
2.7V ≤ VCC ≤ 5.5V 0.3V/1.8V 1.0V 0.8V/1.5V ±10µA
(Extended Voltage Levels)
4.5V ≤ VCC ≤ 5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (CL = 100 pF)
VIL/V
IH
VOL/V
OH
IOL/I
OH
TM
Synchronous Bus)
V
V
NM93C06 Rev. E
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Page 5
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Pin Description
Chip Select (CS)
This is an active high input pin to NM93C06 EEPROM (the device) and is generated by a master that is controlling the device. A high level on this pin selects the device and a low level deselects the device. All serial communications with the device is enabled only when this pin is held high. However this pin cannot be permanently tied high, as a rising edge on this signal is required to reset the internal state-machine to accept a new cycle and a falling edge to initiate an internal programming after a write cycle. All activity on the SK, DI and DO pins are ignored while CS is held low.
Serial Clock (SK)
This is an input pin to the device and is generated by the master that is controlling the device. This is a clock signal that synchronizes the communication between a master and the device. All input informa­tion (DI) to the device is latched on the rising edge of this clock input, while output data (DO) from the device is driven from the rising edge of this clock input. This pin is gated by CS signal.
Serial Input (DI)
This is an input pin to the device and is generated by the master that is controlling the device. The master transfers Input informa­tion (Start bit, Opcode bits, Array addresses and Data) serially via this pin into the device. This Input information is latched on the rising edge of the SCK. This pin is gated by CS signal.
Serial Output (DO)
This is an output pin from the device and is used to transfer Output data via this pin to the controlling master. Output data is serially shifted out on this pin from the rising edge of the SCK. This pin is active only when the device is selected.
Microwire Interface
A typical communication on the Microwire bus is made through the CS, SK, DI and DO signals. To facilitate various operations on the Memory array, a set of 7 instructions are implemented on NM93C06. The format of each instruction is listed under Table 1.
Instruction
Each of the 7 instructions is explained under individual instruction descriptions.
Start bit
This is a 1-bit field and is the first bit that is clocked into the device when a Microwire cycle starts. This bit has to be “1” for a valid cycle to begin. Any number of preceding “0” can be clocked into the device before clocking a “1”.
Opcode
This is a 2-bit field and should immediately follow the start bit. These two bits (along with 2 MSB of address field) select a particular instruction to be executed.
Address Field
This is a 6-bit field and should immediately follow the Opcode bits. In NM93C06, only the LSB bits are used for address decoding during READ, WRITE and ERASE instructions. During these three instructions (READ, WRITE and ERASE) the MSB 2 bits are "don't care" (can be 0 or 1).During all other instructions, the MSB 2 bits are used to decode instruction (along with Opcode bits).
Data Field
This is a 16-bit field and should immediately follow the Address bits. Only the WRITE and WRALL instructions require this field. D15 (MSB) is clocked first and D0 (LSB) is clocked last (both during writes as well as reads).
TM
Synchronous Bus)
Table 1. Instruction set
Instruction Start Bit Opcode Field Address Field Data Field
READ 1 10 0 0 A3 A2 A1 A0
WEN 1 00 11XXXX
WRITE 1 01 0 0 A3 A2 A1 A0 D15-D0
WRALL 1 00 0 1 XXXX D15-D0
WDS 1 00 00XXXX
ERASE 1 11 0 0 A3 A2 A1 A0
ERAL 1 00 1 0 XXXX
NM93C06 Rev. E
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Page 6
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
Functional Description
A typical Microwire cycle starts by first selecting the device (bringing the CS signal high). Once the device is selected, a valid Start bit (“1”) should be issued to properly recognize the cycle. Following this, the 2-bit opcode of appropriate instruction should be issued. After the opcode bits, the 6-bit address information should be issued. For certain instructions, some of these 6 bits are don’t care values (can be “0” or “1”), but they should still be issued. Following the address information, depending on the instruction (WRITE and WRALL), 16-Bit data is issued. Otherwise, depend­ing on the instruction (READ), the device starts to drive the output data on the DO line. Other instructions perform certain control functions and do not deal with data bits. The Microwire cycle ends when the CS signal is brought low. However during certain instructions, falling edge of the CS signal initiates an internal cycle (Programming), and the device remains busy till the completion of the internal cycle. Each of the 7 instructions is explained in detail in the following sections.
1) Read (READ)
READ instruction allows data to be read from a selected location in the memory array. Input information (Start bit, Opcode and Address) for this instruction should be issued as listed under Table1. Upon receiving a valid input information, decoding of the opcode and the address is made, followed by data transfer from the selected memory location into a 16-bit serial-out shift register. This 16-bit data is then shifted out on the DO pin. D15 bit (MSB) is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit (logical 0) precedes this 16-bit data output string. Output data changes are initiated on the rising edge of the SK clock. After reading the 16-bit data, the CS signal can be brought low to end the Read cycle. Refer
2) Write Enable (WEN)
When VCC is applied to the part, it “powers up” in the Write Disable (WDS) state. Therefore, all programming operations must be preceded by a Write Enable (WEN) instruction. Once a Write Enable instruction is executed, programming remains enabled until a Write Disable (WDS) instruction is executed or VCC is completely removed from the part. Input information (Start bit, Opcode and Address) for this WEN instruction should be issued as listed under Table1. The device becomes write-enabled at the end of this cycle when the CS signal is brought low. Execution of a READ instruction is independent of WEN instruction. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in the memory with a specified data. This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this WRITE instruction should be issued as listed under Table1. After inputting the last bit of data (D0 bit), CS signal must be brought low before the next rising edge of the SK clock. This falling edge of the CS initiates the self-timed programming cycle. It takes tWP time (Refer appropriate DC and AC Electrical Characteristics table) for the internal programming cycle to finish. During this time, the device remains busy and is not ready for another instruction.
Read cycle diagram
.
The status of the internal programming cycle can be polled at any time by bringing the CS signal high again, after t CS signal is high, the DO pin indicates the READY/BUSY status of the chip. DO = logical 0 indicates that the programming is still in progress. DO = logical 1 indicates that the programming is finished and the device is ready for another instruction. It is not required to provide the SK clock during this status polling. While the device is busy, it is recommended that no new instruction be issued. Refer
It is also recommended to follow this instruction (after the device becomes READY) with a Write Disable (WDS) instruction to safeguard data against corruption due to spurious noise, inadvert­ent writes etc.
Write cycle diagram.
interval. When
CS
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction except that WRALL instruction will simultaneously program all memory locations with the data pattern specified in the instruction. This instruction is valid only when
■ Device is write-enabled (Refer WEN instruction)
Input information (Start bit, Opcode, Address and Data) for this WRALL instruction should be issued as listed under Table1. After inputting the last bit of data (D0 bit), CS signal must be brought low before the next rising edge of the SK clock. This falling edge of the CS initiates the self-timed programming cycle. It takes tWP time (Refer appropriate DC and AC Electrical Characteristics table) for the internal programming cycle to finish. During this time, the device remains busy and is not ready for another instruction. Status of the internal programming can be polled as described under WRITE instruction description. While the device is busy, it is recommended that no new instruction be issued. Refer
cycle diagram.
Write All
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera­tions and should follow all programming operations. Executing this instruction after a valid write instruction would protect against accidental data disturb due to spurious noise, glitches, inadvertent writes etc. Input information (Start bit, Opcode and Address) for this WDS instruction should be issued as listed under Table1. The device becomes write-disabled at the end of this cycle when the CS signal is brought low. Execution of a READ instruction is indepen­dent of WDS instruction. Refer
Write Disable cycle diagram.
6) Erase (ERASE)
The ERASE instruction will program all bits in the specified location to a logical “1” state. Input information (Start bit, Opcode and Address) for this WDS instruction should be issued as listed under Table1. After inputting the last bit of data (A0 bit), CS signal must be brought low before the next rising edge of the SK clock. This falling edge of the CS initiates the self-timed programming cycle. It takes tWP time (Refer appropriate DC and AC Electrical Characteristics table) for the internal programming cycle to finish. During this time, the device remains busy and is not ready for another instruction. Status of the internal programming can be polled as described under WRITE instruction description. While the device is busy, it is recommended that no new instruction be issued. Refer
Erase cycle diagram.
TM
Synchronous Bus)
NM93C06 Rev. E
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Page 7
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
7) Erase All (ERAL)
The Erase all instruction will program all locations to a logical “1” state. Input information (Start bit, Opcode and Address) for this WDS instruction should be issued as listed under Table1. After inputting the last bit of data (A0 bit), CS signal must be brought low before the next rising edge of the SK clock. This falling edge of the CS initiates the self-timed programming cycle. It takes t (Refer appropriate DC and AC Electrical Characteristics table) for the internal programming cycle to finish. During this time, the device remains busy and is not ready for another instruction. Status of the internal programming can be polled as described under WRITE instruction description. While the device is busy, it is recommended that no new instruction be issued. Refer
All cycle diagram.
Note: The Fairchild CMOS EEPROMs do not require an “ERASE” or “ERASE ALL”
instruction prior to the “WRITE” or “WRITE ALL” instruction, respectively. The “ERASE” and “ERASE ALL” instructions are included to maintain compatibility with
earlier technology EEPROMs.Clearing of Ready/Busy status
WP
Erase
time
When programming is in progress, the Data-Out pin will display the programming status as either BUSY (low) or READY (high) when CS is brought high (DO output will be tri-stated when CS is low). To restate, during programming, the CS pin may be brought high and low any number of times to view the programming status without affecting the programming operation. Once programming is completed (Output in READY state), the output is ‘cleared’ (returned to normal tri-state condition) by clocking in a Start Bit. After the Start Bit is clocked in, the output will return to a tri-stated condition. When clocked in, this Start Bit can be the first bit in a command string, or CS can be brought low again to reset all internal circuits. Refer
Clearing Ready Status
diagram.
Related Document
Application Note: AN758 - Using Fairchild’s MICROWIRE™ EE­PROM.
TM
Synchronous Bus)
NM93C06 Rev. E
7
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Page 8
;
;
;
Timing Diagrams
SYNCHRONOUS DATA TIMING
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
CS
t
SKS
t
CSS
t
SKH
t
SKL
SK
t
DIStDIH
DI
DO (Data Read)
Valid Input
t
SV
t
PD
Valid Input
Valid
Output
t
DH
DO (Status Read)
NORMAL READ CYCLE (READ)
CS
SK
DI
DO
93C06: Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined)
1 1 0 A5 A4 A1 A0
Start Bit
Opcode Bits(2)
High - Z
Address Bits(6)
0
Dummy Bit
t
PD
Valid
Output
Valid Status
D15 D1 D0
t
CSH
TM
Synchronous Bus)
t
DF
t
DF
t
CS
NM93C06 Rev. E
WRITE ENABLE CYCLE (WEN)
CS
SK
DI
DO
93C06: Address bits pattern -> 1-1-x-x-x-x; (x -> Don't Care, can be 0 or 1)
1 0 0 A5 A4 A1 A0
Start Bit
Opcode Bits(2)
Address Bits(6)
High - Z
8
t
CS
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Page 9
Timing Diagrams (Continued)
WRITE DISABLE CYCLE (WDS)
CS
SK
DI
DO
93C06: Address bits pattern -> 0-0-x-x-x-x; (x -> Don't Care, can be 0 or 1)
WRITE CYCLE (WRITE)
CS
SK
DI
DO
93C06: Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined) Data bits pattern -> User defined
1 0 0 A5 A4 A1 A0
Start
Opcode
Bit
Bits(2)
1 0 1 A5 A4 A1 A0 D15 D14 D1 D0
Start Bit
Opcode Bits(2)
Address Bits(6)
Address Bits(6)
High - Z
High - Z
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
t
CS
TM
Synchronous Bus)
t
CS
t
Data Bits(16)
WP
Busy
Ready
NM93C06 Rev. E
WRITE ALL CYCLE (WRALL)
CS
SK
DI
DO
93C06: Address bits pattern -> 0-1-x-x-x-x; (x -> Don't Care, can be 0 or 1) Data bits pattern -> User defined
1 0 0 A5 A4 A1 A0 D15 D14 D1 D0
Start Bit
Opcode Bits(2)
Address Bits(6)
High - Z
9
Data Bits(16)
t
CS
t
WP
Ready
Busy
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Page 10
Timing Diagrams (Continued)
ERASE CYCLE (ERASE)
CS
SK
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
t
CS
TM
Synchronous Bus)
DI
DO
93C06: Address bits pattern -> 0-0-A3-A2-A1-A0; (A3-A0 -> User defined)
1 1 1 A5 A4 A1 A0
Start Bit
Opcode Bits(2)
High - Z
Address Bits(6)
ERASE ALL CYCLE (ERAL)
CS
SK
DI
DO
93C06: Address bits pattern -> 1-0-x-x-x-x
1 1 1 A5 A4 A1 A0
Start Bit
Opcode Bits(2)
High - Z
; (x -> Don't Care, can be 0 or 1)
Address Bits(6)
t
WP
Ready
Busy
t
CS
t
WP
Ready
Busy
NM93C06 Rev. E
CLEARING READY STATUS
CS
SK
DI
DO
Note: This Start bit can also be part of a next instruction. Hence the cycle can be continued (instead of getting terminated, as shown) as if a new instruction is being issued.
High - Z High - Z
Busy
Ready
10
Start Bit
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Page 11
Physical Dimensions inches (millimeters) unless otherwise noted
0.189 - 0.197
(4.800 - 5.004)
8765
0.228 - 0.244
(5.791 - 6.198)
1234
Lead #1
IDENT
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
TM
Synchronous Bus)
0.010 - 0.020
(0.254 - 0.508)
0.0075 - 0.0098 (0.190 - 0.249) Typ. All Leads
x 45°
0.150 - 0.157
(3.810 - 3.988)
0.04
(0.102)
All lead tips
8° Max, Typ.
All leads
0.016 - 0.050 (0.406 - 1.270) Typ. All Leads
0.053 - 0.069
(1.346 - 1.753)
0.014
(0.356)
0.050
(1.270)
Typ
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Package Number M08A
0.004 - 0.010
(0.102 - 0.254)
Seating
Plane
0.014 - 0.020
(0.356 - 0.508)
Typ.
NM93C06 Rev. E
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Page 12
Physical Dimensions inches (millimeters) unless otherwise noted
0.114 - 0.122 (2.90 - 3.10)
85
0.246 - 0.256 (6.25 - 6.5)
0.123 - 0.128 (3.13 - 3.30)
0.0433 Max
(1.1)
0.0256 (0.65) Typ.
14
Pin #1 IDENT
0.169 - 0.177 (4.30 - 4.50)
0.002 - 0.006 (0.05 - 0.15)
0.0075 - 0.0098 (0.19 - 0.30)
DETAIL A
Typ. Scale: 40X
(1.78) Typ
(0.42) Typ
Land pattern recommendation
See detail A
0°-8°
0.020 - 0.028 (0.50 - 0.70)
Seating
(4.16) Typ
(0.65) Typ
plane
(7.72) Typ
0.0035 - 0.0079
Gage plane
0.0075 - 0.0098 (0.19 - 0.25)
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
TM
Synchronous Bus)
Notes: Unless otherwise specified
1. Reference JEDEC registration MO153. Variation AA. Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
Package Number MTC08
NM93C06 Rev. E
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Page 13
Physical Dimensions inches (millimeters) unless otherwise noted
0.373 - 0.400
(9.474 - 10.16)
0.090
(2.286)
8765
1234
0.040
(1.016)
20° ± 1°
0.065
(1.651)
0.050
(1.270)
+
Typ.
0.250 - 0.005
(6.35 ± 0.127)
0.039
(0.991)
0.130 ± 0.005
(3.302 ± 0.127)
0.125 - 0.140
(3.175 - 3.556)
90° ± 4°
Typ
0.018 ± 0.003
(0.457 ± 0.076)
0.100 ± 0.010
(2.540 ± 0.254)
0.060
(1.524)
95° ± 5°
0.009 - 0.015
(0.229 - 0.381)
0.280 MIN
(7.112)
0.300 - 0.320
(7.62 - 8.128)
+0.040
0.325
-0.015
+1.016
8.255
-0.381
0.092 DIA
(2.337)
Pin #1 IDENT
0.030
(0.762)
0.125
(3.175)
DIA
NOM
0.045 ± 0.015
(1.143 ± 0.381)
Option 1
MAX
0.032 ± 0.005
(0.813 ± 0.127)
RAD
Pin #1
IDENT
0.020
(0.508)
Min
Option 2
0.145 - 0.200
(3.683 - 5.080)
87
1
(MICROWIRE
NM93C06 256-Bit Serial CMOS EEPROM
TM
Synchronous Bus)
Molded Dual-In-Line Package (N)
Package Number N08E
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Americas Europe Hong Kong Japan Ltd. Customer Response Center Fax: +44 (0) 1793-856858 8/F, Room 808, Empire Centre 4F, Natsume Bldg.
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English Tel: +44 (0) 1793-856856 Kowloon. Hong Kong Tokyo, 113-0034 Japan Français Tel: +33 (0) 1-6930-3696 Tel; +852-2722-8338 Tel: 81-3-3818-8840 Italiano Tel: +39 (0) 2-249111-1 Fax: +852-2722-8383 Fax: 81-3-3818-8841
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably ex­pected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
13
NM93C06 Rev. E
www.fairchildsemi.com
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