Page 1
Product Description
Stanford Microdevices’ NGA-286 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 6 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
Preliminary
Preliminary
NGA-286
DC-6000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Small Signal Gain vs. Frequency
25
20
Product Features
• High Gain: 14.8dB at 1950Mhz
• Cascadable 50 ohm: 1.3:1 VSWR
• Patented GaAs HBT Technology
• Operates from Single Supply
15
dB
10
5
• Low Thermal Resistance Package
• Unconditionally Stable
Applications
0
012345678
Frequency GHz
lobmyS
Z
0
P
Bd1
PI
3
S
12
htdiwdnaBhtdiwdnaBBd3 zHM0083
S
11
S
22
S
21
FNerugiFesioNzHM0002=fBd4.3
V
D
R
l-j,)dael-noitcnuj(ecnatsiseRlamrehT W/Cº021
ht
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
I,smhO05=
D
niaGlangiSllamS
RWSVtupnIzHM0006-CD=f-1:3.1
RWSVtuptuOzHM0006-CD=f-1:3.1
noitalosIesreveR
egatloVeciveD V0.4
:snoitidnoCtseT:sretemaraP
Cº52=T,Am05=
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihT
mBd0=enotreptuorewoP
• Cellular, PCS, CDPD
• Wireless Data, SONET
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
1
stinU .niM .pyT .xaM
mBd
mBd
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
Bd
Bd
2.51
2.51
5.51
0.23
4.13
9.03
6.51
8.41
4.41
8.81
7.81
6.81
EDS-101102 Rev C
Page 2
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Key parameters, at typical operating frequencies:
lacipyT
retemaraP
zHM005
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM058
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0591
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0042
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
Cº52
8.51
Bd
8.13
3.51
0.12
8.81
6.51
Bd
Bd
Bd
0.23
2.51
0.02
8.81
8.41
Bd
Bd
Bd
4.13
2.51
1.71
7.81
4.41
Bd
Bd
Bd
9.03
5.51
0.61
6.81
Bd
Bd
retemaraPeulaVtinU
tnerruCylppuS011Am
egatloVeciveD0.6V
erutarepmeTgnitarepO58+ot04-Cº
rewoPtupnImumixaM01+mBd
egnaRerutarepmeTegarotS051+ot04-Cº
erutarepmeTnoitcnuJgnitarepO051+Cº
noitidnoCtseT
tinU
I(
D
mBd
)detonesiwrehtosselnu,Am05=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2
EDS-101102 Rev C
Page 3
Preliminary
Preliminary
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
#niPnoitcnuF
1 NIFR
2 DNG
3 /TUOFR
SAIB
4 DNG.2niPsaemaS
Application Schematic for Operation at 850 MHz
seulaVrotsiseRsaiBdednemmoceR
ylppuS
V5V8V9V21
)sV(egatloV
saibR
0228001061
For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
)smhO(
50 ohm
microstrip
100pF
noitpircseDcitamehcSeciveD
foesuehtseriuqernipsihT.niptupniFR
nesohcroticapacgnikcolbCDlanretxena
.noitarepofoycneuqerfehtrof
tsebroF.dnuorgotnoitcennoC
otesolcsa(selohaivesuecnamrofrep
daelecuderot)elbissopsasdaeldnuorg
.ecnatcudni
siegatlovCD.nipsaibdnatuptuoFR
CDaerofereht,nipsihtnotneserp
rofyrassecensiroticapacgnikcolb
.noitareporeporp
1uF
68pF
2
1
3
4
33nH
100pF
R bias
50 ohm
microstrip
Vs
Application Schematic for Operation at 1950 MHz
50 ohm
microstrip
1uF
22pF
2
1
3
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
3
22nH
68pF
R bias
50 ohm
microstrip
Vs
EDS-101102 Rev C
Page 4
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
Preliminary
Preliminary
dB
dB
S21, ID =50mA, T=25ºC
25
20
15
10
5
0
012345678
Frequency GHz
S11, ID =50mA, T=25ºC
0
-5
-10
-15
-20
-25
-30
012345678
Frequency GHz
S12, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
012345678
Frequency GHz
S22, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
012345678
Frequency GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
EDS-101102 Rev C
Page 5
Preliminary
Preliminary
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Typical S-Parameters, ID = 50mA ( No external matching, de-embedded to device leads)
11S 12S 21S 22S
zHGqerF gam gnA Bd gam gnA Bd gam gnA gam gnA
50.0
01.0
02.0
03.0
04.0
05.0
06.0
07.0
08.0
09.0
00.1
01.1
02.1
03.1
04.1
05.1
06.1
07.1
08.1
09.1
00.2
02.2
04.2
06.2
08.2
00.3
02.3
04.3
06.3
08.3
00.4
05.4
00.5
05.5
00.6
05.6
00.7
05.7
00.8
480.08719.51442.68717.81-711.00540.0971-
280.04719.51832.67718.81-511.00640.0671-
480.08619.51902.64718.81-511.01-740.0471-
680.02618.51091.60718.81-511.01-940.0171-
780.06518.51461.67618.81-511.01-150.0961-
980.00518.51041.64618.81-511.02-450.0861-
290.05417.51901.61618.81-511.02-750.0761-
590.00417.51970.68518.81-511.02-160.0661-
890.05316.51130.65518.81-511.03-560.0661-
101.02316.51400.62518.81-511.03-860.0661-
501.08215.51669.59418.81-511.04-370.0661-
901.04215.51429.56418.81-511.04-870.0661-
311.01214.51678.53418.81-511.04-480.0661-
611.08113.51548.50418.81-511.05-880.0661-
021.05113.51397.57318.81-511.05-490.0861-
421.02112.51727.54317.81-611.05-101.0961-
821.09011.51086.51317.81-611.06-801.0171-
131.07010.51646.59217.81-611.06-311.0271-
431.05019.41475.56217.81-611.06-021.0571-
831.04018.41025.53217.81-711.07-721.0671-
341.01018.41464.50216.81-711.07-531.0971-
051.0996.41853.55116.81-711.08-941.0671
951.0794.41432.59016.81-811.09-561.0071
761.0692.41241.54015.81-811.09-081.0661
081.0490.41320.5995.81-911.001-891.0061
191.0498.31609.4494.81-021.011-312.0651
302.0396.31808.4984.81-021.021-922.0151
612.0294.31956.4483.81-121.031-742.0641
622.0191.31525.4973.81-221.041-162.0341
532.0099.21493.4473.81-221.051-572.0831
442.0197.21703.4072.81-321.051-482.0531
872.0882.21860.4950.81-621.081-513.0031
892.0788.11278.3748.71-921.012-763.0421
623.0682.11056.3637.71-131.052-214.0511
253.0387.01224.3626.71-231.082-044.0801
083.0082.01222.3615.71-331.013-664.0101
804.0677.9860.363.71-631.053-594.039
344.0373.9419.24-3.71-731.093-525.068
784.0077.8517.241-4.71-531.044-465.097
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
EDS-101102 Rev C
Page 6
Preliminary
Preliminary
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
N2
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
682-AGN"70001
Part Symbolization
The part will be symbolized with a “N2” designator
on the top surface of the package.
Package Dimensions
PCB Pad Layout
N2
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6
EDS-101102 Rev C
Page 7
For 86 Outline
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Component T ape and Reel Packaging
T ape Dimensions
Preliminary
Preliminary
D
ESCRIPTION
ytivaC htgneL
htdiW
tekcoS
htpeD
hctiP
retemaideloHmottoB
noitarofreP retemaiD
hctiP
noitisoP
epaTrevoC htdiW
ssenkcihTepaT
epaTreirraC htdiW
ssenkcihTepaT
ecnatsiD )noitceriDhtdiW(noitarofrePotytivaC
)noitceriDhtgneL(noitarofrePotytivaC
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
7
S
YMBOL
A
D
D
P
W
P
S
IZE(MM
)
01.0±01.6
B
H
K
P
1
o
o
E
C
t
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T
F
2
EDS-101102 Rev C
50.0±03.0
50.0±05.5
50.0±00.2
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