Stanford Microdevices’ NGA-186 is a high performance
Gallium Arsenide Heterojunction Bipolar Transistor MMIC
Amplifier. Designed with InGaP process technology for
improved reliability, a Darlington configuration is utilized for
broadband performance up to 6 Ghz. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of intermodulation
products.
Small Signal Gain vs. Frequency
25
20
15
dB
10
Preliminary
Preliminary
NGA-186
DC-6000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Product Features
• 12.0dB Gain, 14.7 dBm P1dB at 1950Mhz
• Cascadable 50 ohm: 1.2:1 VSWR
• Patented GaAs HBT Technology
• Operates from Single Supply
• Low Thermal Resistance Package
• Unconditionally Stable
5
Applications
0
012345678
Frequency GHz
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0
P
Bd1
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3
S
12
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S
11
S
22
S
21
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R
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
I,smhO05=
D
niaGlangiSllamS
RWSVtupnIzHM0006-CD=f-1:2.1
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Cº52=T,Am05=
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihT
mBd0=enotreptuorewoP
• Cellular, PCS, CDPD
• Wireless Data, SONET
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
zHM058=f
zHM0591=f
zHM0042=f
1
stinU.niM.pyT.xaM
mBd
mBd
mBd
mBd
mBd
mBd
Bd
Bd
Bd
Bd
Bd
Bd
6.41
7.41
9.41
9.23
7.13
1.13
4.21
0.21
8.11
5.61
4.61
4.61
EDS-101101 Rev C
Page 2
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Key parameters, at typical operating frequencies:
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retemaraP
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niaG
3PItuptuO
Bd1PtuptuO
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Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0591
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ssoLnruteRtupnI
noitalosI
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Cº52
5.21
Bd
6.23
7.41
1.03
5.61
4.21
Bd
Bd
Bd
9.23
6.41
9.92
5.61
0.21
Bd
Bd
Bd
7.13
7.41
6.72
4.61
8.11
Bd
Bd
Bd
1.13
9.41
3.52
4.61
Bd
Bd
retemaraPeulaVtinU
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mBd0=enotreptuoP,zHM1=gnicapsenoT
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mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
2
EDS-101101 Rev C
Page 3
#niPnoitcnuFnoitpircseDcitamehcSeciveD
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SAIB
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Application Schematic for Operation at 850 MHz
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V5V8V9V21
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For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
8157001061
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Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
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R bias
Vs
33nH
50 ohm
microstrip
2
50 ohm
microstrip
1
3
100pF
4
100pF
Application Schematic for Operation at 1950 MHz
50 ohm
microstrip
1uF
22pF
2
1
3
68pF
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
4
3
22nH
68pF
R bias
50 ohm
microstrip
Vs
EDS-101101 Rev C
Page 4
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Electrical Specifications at Ta = 25ºC
Preliminary
Preliminary
S21, ID =50mA, T=25ºC
25
20
15
dB
10
5
0
012345678
Frequency GHz
S1 1, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35
012345678
Frequency GHz
S12, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35
012345678
Frequency GHz
S22, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35
012345678
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
4
EDS-101101 Rev C
Page 5
Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Typical S-Parameters, ID = 50mA (No external matching, de-embedded to device leads)
11S12S21S22S
zHGqerFgamgnABdgamgnABdgamgnAgamgnA
50.0
01.0
02.0
03.0
04.0
05.0
06.0
07.0
08.0
09.0
00.1
01.1
02.1
03.1
04.1
05.1
06.1
07.1
08.1
09.1
00.2
02.2
04.2
06.2
08.2
00.3
02.3
04.3
06.3
08.3
00.4
02.4
04.4
06.4
08.4
00.5
05.5
00.6
05.6
00.7
05.7
00.8
030.01-6.21462.49714.61-251.00670.01-
130.046.21162.47714.61-151.00670.03-
130.076.21842.44714.61-151.01-570.07-
130.0115.21732.42715.61-051.02-470.001-
130.0515.21622.49615.61-051.02-370.031-
130.0815.21612.46615.61-051.03-170.061-
230.0225.21202.44615.61-051.03-960.091-
230.0524.21091.41615.61-051.04-760.032-
230.0924.21361.48515.61-051.05-460.082-
230.0234.21561.46515.61-051.05-260.013-
330.0534.21741.43515.61-051.05-060.063-
330.0933.21131.40515.61-051.06-850.014-
430.0243.21611.47415.61-051.07-550.084-
430.0543.21201.45415.61-051.07-450.035-
530.0942.21580.42415.61-051.08-250.095-
630.0252.21460.49315.61-051.08-050.086-
830.0551.21340.46314.61-151.09-840.077-
930.0851.21430.44314.61-151.09-740.048-
040.0060.21799.32314.61-151.001-540.049-
140.0560.21389.39214.61-251.001-640.0501-
340.0860.21569.36214.61-151.011-740.0711-
840.0479.11429.31214.61-251.021-150.0831-
450.0288.11478.36114.61-251.031-060.0061-
260.0887.11828.31114.61-251.041-270.0571-
470.0496.11197.36013.61-351.061-090.0271
580.0895.11837.31013.61-351.071-601.0361
990.00013.11196.3693.61-351.081-321.0651
511.00012.11816.3193.61-351.002-441.0941
621.00010.11445.3783.61-351.012-161.0441
931.01018.01184.3283.61-351.022-971.0831
351.02017.01934.3873.61-451.032-391.0631
171.02016.01383.3373.61-451.052-012.0331
581.01015.01833.3962.61-451.062-722.0131
791.00013.01192.3462.61-551.072-842.0821
802.0993.01652.3062.61-551.082-862.0621
022.0991.01991.3452.61-551.003-392.0221
252.0697.9660.3342.61-551.043-443.0411
972.0293.9509.2332.61-451.073-183.0701
303.0789.8377.2223.61-351.014-214.0001
223.0285.8276.2313.61-451.044-644.039
153.0083.8685.232.61-451.084-584.068
693.0878.7064.28-4.61-251.035-135.008
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
5
EDS-101101 Rev C
Page 6
Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
N1
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
681-AGN"70001
Part Symbolization
The part will be symbolized with a “N1” designator
on the top surface of the package.
Package Dimensions
PCB Pad Layout
N1
522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
6
EDS-101101 Rev C
Page 7
For 86 Outline
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Component T ape and Reel Packaging
T ape Dimensions
Preliminary
Preliminary
D
ESCRIPTION
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522 Almanor Ave., Sunnyvale, CA 94086Phone: (800) SMI-MMIChttp://www.stanfordmicro.com
7
S
YMBOL
A
D
D
P
W
P
S
IZE(MM
)
01.0±01.6
B
H
K
P
1
o
o
E
C
t
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T
F
2
EDS-101101 Rev C
50.0±03.0
50.0±05.5
50.0±00.2
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