Datasheet NGA-186 Datasheet (Stanford Microdevices)

Page 1
Product Description
Stanford Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
Small Signal Gain vs. Frequency
25 20 15
dB
10
Preliminary
Preliminary
NGA-186
DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier
Product Features
12.0dB Gain, 14.7 dBm P1dB at 1950Mhz
Cascadable 50 ohm: 1.2:1 VSWR
Patented GaAs HBT Technology
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
5
Applications
0
012345678
Frequency GHz
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Z
0
P
Bd1
PI
3
S
12
htdiwdnaBhtdiwdnaBBd3 zHM0065
S
11
S
22
S
21
FNerugiFesioNzHM0002=fBd0.4
V
D
R
l-j,)dael-noitcnuj(ecnatsiseRlamrehT W/Cº021
ht
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
I,smhO05=
D
niaGlangiSllamS
RWSVtupnIzHM0006-CD=f-1:2.1
RWSVtuptuOzHM0006-CD=f-1:2.1
noitalosIesreveR
egatloVeciveD V1.4
:snoitidnoCtseT:sretemaraP
Cº52=T,Am05=
noisserpmoCBd1tarewoPtuptuO
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mBd0=enotreptuorewoP
Cellular, PCS, CDPD
Wireless Data, SONET
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
1
stinU .niM .pyT .xaM
mBd mBd mBd
mBd mBd mBd
Bd Bd Bd
Bd Bd Bd
6.41
7.41
9.41
9.23
7.13
1.13
4.21
0.21
8.11
5.61
4.61
4.61
Page 2
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Absolute Maximum Ratings
Preliminary
Preliminary
Operation of this device above any one of these parameters may cause permanent damage.
Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Key parameters, at typical operating frequencies:
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retemaraP
zHM005
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM058
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0591
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
zHM0042
niaG
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
Cº52
5.21
Bd
6.23
7.41
1.03
5.61
4.21
Bd Bd
Bd
9.23
6.41
9.92
5.61
0.21
Bd Bd
Bd
7.13
7.41
6.72
4.61
8.11
Bd Bd
Bd
1.13
9.41
3.52
4.61
Bd Bd
retemaraPeulaVtinU
tnerruCylppuS011Am
egatloVeciveD0.6V
erutarepmeTgnitarepO58+ot04-Cº
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egnaRerutarepmeTegarotS051+ot04-Cº
)051+Cº
T(erutarepmeTnoitcnuJgnitarepO
J
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D
mBd
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mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
mBd
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2
Page 3
#niPnoitcnuFnoitpircseDcitamehcSeciveD
1 NIFRfoesuehtseriuqernipsihT.niptupniFR
2 DNGtsebroF.dnuorgotnoitcennoC
3 /TUOFR
SAIB
4 DNG.2niPsaemaS
Application Schematic for Operation at 850 MHz
seulaVrotsiseRsaiBdednemmoceR
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V5V8V9V21
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For 9V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended.
8157001061
)smhO(
Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
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1uF
68pF
R bias
Vs
33nH
50 ohm
microstrip
2
50 ohm
microstrip
1
3
100pF
4
100pF
Application Schematic for Operation at 1950 MHz
50 ohm
microstrip
1uF
22pF
2
1
3
68pF
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
3
22nH
68pF
R bias
50 ohm
microstrip
Vs
Page 4
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Electrical Specifications at Ta = 25ºC
Preliminary
Preliminary
S21, ID =50mA, T=25ºC
25 20 15
dB
10
5 0
012345678
Frequency GHz
S1 1, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35 012345678
Frequency GHz
S12, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35 012345678
Frequency GHz
S22, ID =50mA, T=25ºC
0
-5
-10
-15
dB
-20
-25
-30
-35 012345678
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
Page 5
Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Typical S-Parameters, ID = 50mA (No external matching, de-embedded to device leads)
11S 12S 21S 22S
zHGqerF gam gnA Bd gam gnA Bd gam gnA gam gnA
50.0
01.0
02.0
03.0
04.0
05.0
06.0
07.0
08.0
09.0
00.1
01.1
02.1
03.1
04.1
05.1
06.1
07.1
08.1
09.1
00.2
02.2
04.2
06.2
08.2
00.3
02.3
04.3
06.3
08.3
00.4
02.4
04.4
06.4
08.4
00.5
05.5
00.6
05.6
00.7
05.7
00.8
030.01-6.21462.49714.61-251.00670.01-
130.046.21162.47714.61-151.00670.03-
130.076.21842.44714.61-151.01-570.07-
130.0115.21732.42715.61-051.02-470.001-
130.0515.21622.49615.61-051.02-370.031-
130.0815.21612.46615.61-051.03-170.061-
230.0225.21202.44615.61-051.03-960.091-
230.0524.21091.41615.61-051.04-760.032-
230.0924.21361.48515.61-051.05-460.082-
230.0234.21561.46515.61-051.05-260.013-
330.0534.21741.43515.61-051.05-060.063-
330.0933.21131.40515.61-051.06-850.014-
430.0243.21611.47415.61-051.07-550.084-
430.0543.21201.45415.61-051.07-450.035-
530.0942.21580.42415.61-051.08-250.095-
630.0252.21460.49315.61-051.08-050.086-
830.0551.21340.46314.61-151.09-840.077-
930.0851.21430.44314.61-151.09-740.048-
040.0060.21799.32314.61-151.001-540.049-
140.0560.21389.39214.61-251.001-640.0501-
340.0860.21569.36214.61-151.011-740.0711-
840.0479.11429.31214.61-251.021-150.0831-
450.0288.11478.36114.61-251.031-060.0061-
260.0887.11828.31114.61-251.041-270.0571-
470.0496.11197.36013.61-351.061-090.0271
580.0895.11837.31013.61-351.071-601.0361
990.00013.11196.3693.61-351.081-321.0651
511.00012.11816.3193.61-351.002-441.0941
621.00010.11445.3783.61-351.012-161.0441
931.01018.01184.3283.61-351.022-971.0831
351.02017.01934.3873.61-451.032-391.0631
171.02016.01383.3373.61-451.052-012.0331
581.01015.01833.3962.61-451.062-722.0131
791.00013.01192.3462.61-551.072-842.0821
802.0993.01652.3062.61-551.082-862.0621
022.0991.01991.3452.61-551.003-392.0221
252.0697.9660.3342.61-551.043-443.0411
972.0293.9509.2332.61-451.073-183.0701
303.0789.8377.2223.61-351.014-214.0001
223.0285.8276.2313.61-451.044-644.039
153.0083.8685.232.61-451.084-584.068
693.0878.7064.28-4.61-251.035-135.008
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5
Page 6
Preliminary
Preliminary
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
N1
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
681-AGN"70001
Part Symbolization
The part will be symbolized with a “N1” designator on the top surface of the package.
Package Dimensions
PCB Pad Layout
N1
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6
Page 7
For 86 Outline
NGA-186 DC-6.0 GHz 4.1V GaAs HBT
Component T ape and Reel Packaging
T ape Dimensions
Preliminary
Preliminary
D
ESCRIPTION
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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
7
S
YMBOL
A
D D
P
W
P
S
IZE(MM
)
01.0±01.6 B H K P
1
o o
E C
t
01.0±02.6
01.0±01.3
01.0±00.2
01.0±00.8
.nim05.1
01.0±05.1
01.0±00.4
01.0±57.1
52.0±01.9
10.0±50.0
03.0±00.21
T F
2
50.0±03.0
50.0±05.5
50.0±00.2
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