Page 1
PRELIMINARY DATA SHEET
GaAs MES FET
NES2527B-30
30 W S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION PACKAGE DIMENSIONS (UNIT: mm)
The NES2527B-30 is power GaAs FET which
provides high output power and high gain in the 2.5 - 2.7
GHz band.
Internal input matching circuits are designed to
optimize performance. The device has a 0.8 µm gate
length for increased linear gain. To reduce thermal
resistance, the device uses PHS (Plated Heat Sink)
technology.
The device incorporates WSi (tungsten silicide) gate
for high reliability and SiO2 glassivation for surface
stability.
FEATURES
• High output power
• High gain
• High power added efficiency
• Internally matched input
• High reliability
17.4±0.3 8.0
0.1
2.4
0.2 MAX
SOURCE
24±0.3
20.4
1.0±0.1
GATE
DRAIN
1.8
2.4
R1.2
4.5 MAX
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
Document No. P12381EJ1V0DS00 (1st edition)
Date Published February 1997 N
Printed in Japan
DS
GS
GD
D
G
T(*)
ch
stg
The information in this document is subject to change without notice.
15 V
7V
−
18 V
−
27 A
180 mA
110 W
175 °C
65 to +175 °C
−
C
= 25 °C
T
*
1997©
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss ðð 18.0 ðð AVDS = 2.5 V, VGS = 0 V
Pinch-off Voltage V
Thermal Resistance R
Output Power at 1 dB G.C.P
*3
Linear Gain G
Power Added Efficiency
3rd Order Intermodulation
P
th
1
Pð
L
K
add ðð 40.0 ðð %
*1
3
IM
ð4.0 ð2.6 ðð VVDS = 2.5 V, IDS = 80 mA
ðð 1.3 1.5 °C/W Channel to Case
44.0 45.0 ðð dBm
11.5 13.0 ðð dB
ðð ð42.0 ðð dBc
freq = 2.5/2.7 GHz
DS
= 10 V
V
DS
= 6.0 A (RF OFF)
I
Distortion
O
P
= 33.0 dBm, 'f = 1.0 MHz
*1
RECOMMENDING OPERATING LIMITS
*2
Rg
(:)
V
(V)
DS
Tch
(°C)
G.C.P
*3
Tcase
(°C)
NES2527B-30
30 to 10 to 130 to 3 dBcomp to 62
Rg is the series resistance between the gate supply and the FET gate.
*2
G.C.P: Gain Compression Point
*3
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 °C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER
NES2527B-30
80
15.0
70
45
P
OUT
60
10.0
40
- Output Power - dBmP
out
P
EFF
I
D
50
- Drain Current - A
D
I
40
30
add - Efficiency - %
ηη
5.0
35
TEST CONDITIONS
Freq = 2.5 (GHz)
DS
= 10.0 (V)
V
DS
= 6.0 (A)
I
Rg = 0 (Ω)
25 30 35
Pin - Input Power - dBm
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs INPUT POWER
45
40
- Output Power - dBm
out
35
25 30 35
P
OUT
EFF
I
D
80
15.0
70
60
10.0
50
40
30
5.0
TEST CONDITIONS
Freq = 2.7 (GHz)
V
DS
= 10.0 (V)
DS
= 6.0 (A)
I
Rg = 0 (Ω)
- Drain Current - A
D
add - Efficiency - %
I
Pin - Input Power - dBm
3
Page 4
NES2527B-30
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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