Datasheet NES2427P-60 Datasheet (NEC)

PRELIMINARY DATA SHEET

©

N-CHANNEL GaAs MES FET

NES2427P-60

60 W S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION

The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for
MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm
Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal
characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• Push-pull type N-channel GaAs MES FET

•VDS = 10.0 V operation

• High output power: P

• High linear gain: GL = 12.0 dB TYP.

• High power added efficiency:

O (1 dB)

= 60 W TYP.

add

= 35 % TYP. @ VDS = 10.0 V, I

η

ORDERING INFORMATION (PLAN)

Part Number Package Supplying Form

NES2427P-60 T-92 ESD protective envelope

Remark

To order evaluation samples, consult your NEC sales representative.

Dset

= 12.0 A (total), f = 2.50, 2.70 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14997EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan

2000

ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NES2427P-60

Drain to Source Voltage V
Gate to Source Voltage V
Gate to Drain Voltage V
Drain Current I
Gate Current I
Total Power Dissipation
Channel Temperature T
Storage Temperature T

C

= +25 °C

T

Note

DS

GSO

GDO

D

G

Note

tot

P

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage V
Gain Compression Gcomp
Channel Temperature T
Set Drain Current I
Gate Resistance
Case Temperature

DS

ch

Dset

VDS = 10.0 V, RF OFF

Note 1

g

R

Note 2

C

T

15 V

−

7V

−

18 V

54 A
360 mA
200 W
175

−

65 to +175

°

C

°

C

−−

−−

−−

−

−

12.0 12.0 A

2.5 2.5

−−

10.0 V

3.0 dB

+150

60

°

C

Ω

°

C

g

is the series resistance between the gate supply and the FET gate.

Notes 1.

R
TC MAX. = 60 °C is at the condition of I

2.

TC (°C) ≤ Tch MAX. (150 °C) − VDS (V) × I

Dset

= 12.0 A.

Dset

ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Saturated Drain Current I
Pinch-off Voltage V
Thermal Resistance R
Gain 1 dB Compression Output Power P
Drain Current I
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion IM

Dset

= 6.0 A each drain

Notes 1.

I
Pin = 32 dBm

2.

DSS

O (1 dB)

η

L

G

VDS = 2.5 V, VGS = 0 V

p

VDS = 2.5 V, ID = 168 mA

th

Channel to Case
f = 2.50, 2.70 GHz, VDS = 10.0 V, 47.0 48.0

D

Rg = 2.5 Ω,

Dset

I

add

Note 2

3

= 12.0 A Total (RF OFF)

∆

f = 1 MHz,

out

P

= 39 dBm (2 tones total)

(A) × Rth MAX. (°C/W)

Note 1

−

−

4.0

−

−

−

36.0

−

2.1

0.65 0.75

16.0
35

10.0 12.0

−−48−

−

−

−

−

−

−

A
V

°

C/W

dBm

A
%

dB

dBc

2

Preliminary Data Sheet P14997EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °°°°C)

f = 2.50 GHz f = 2.70 GHz

NES2427P-60

OUTPUT POWER, POWER ADDED

EFFICIENCY vs. INPUT POWER

55

VDS = 10.0 V, f = 2.50 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

50

45

(dBm)

out

P

out

40

35

Output Power P

30

25

1510 20 25 30 35 40 45

Input Power Pin (dBm)

DRAIN CURRENT, GATE CURRENT

vs. INPUT POWER

20

VDS = 10.0 V, f = 2.50 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

18

16

(A)

D

14

I

D

OUTPUT POWER, POWER ADDED

EFFICIENCY vs. INPUT POWER

60

50

(%)

add

η

40

η

add

30

20

10

Power Added Efficiency

0

55

VDS = 10.0 V, f = 2.70 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

50

45

(dBm)

out

40

35

Output Power P

30

25

1510 20 25 30 35 40 45

Input Power Pin (dBm)

60

50

P

out

(%)

add

η

40

η

add

30

20

10

Power Added Efficiency

0

DRAIN CURRENT, GATE CURRENT

vs. INPUT POWER

120

100

80

60

(mA)

G

20

VDS = 10.0 V, f = 2.70 GHz (1 tone)

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

18

16

(A)

D

14

120

100

I

D

80

60

(mA)

G

12

10

Drain Current I

8
6

Input Power Pin (dBm)

3RD ORDER INTERMODULATION
DISTORTION, DRAIN CURRENT
vs. 2 TONES OUTPUT POWER

0

VDS = 10.0 V, f = 2.50 GHz (2 tones)

(dBc)

3

3rd Order Intermodulation Distortion IM

–10

–20

–30

–40

–50
–60
–70

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

I

D

IM

3

2520 30 35 40 45 50

2 tones Output Power P

out

(dBm)

40

20

I

G

Gate Current I

0

–20

45403525 30201510

12

10

Drain Current I

8
6

40

20

I

G

Gate Current I

0

–20

45403525 30201510

Input Power Pin (dBm)

3RD ORDER INTERMODULATION

DISTORTION, DRAIN CURRENT

vs. 2 TONES OUTPUT POWER

16
14

12
10

8

6

4
2

0

VDS = 10.0 V, f = 2.70 GHz (2 tones)

(dBc)

(A)

D

3

–10

–20

Dset

= 12.0 A (RF OFF), Rg = 2.5 Ω

I

–30

–40

Drain Current I

–50
–60
–70

3rd Order Intermodulation Distortion IM

2520 30 35 40 45 50

2 tones Output Power P

IM

I

D

3

out

(dBm)

16
14

12
10

8

6

4
2

(A)

D

Drain Current I

Remark

The graphs indicate nominal characteristics.

Preliminary Data Sheet P14997EJ1V0DS00

3

PACKAGE DIMENSIONS

T-92 (UNIT: mm)

45˚

NES2427P-60

35.2±0.3

9.7±0.3

G1 G2

2.4±0.3

R1.2±0.3

2.4±0.2

S

D1 D2

4.0±0.3

31.6±0.3

PIN CONNECTIONS

G1, G2

: Gate

D1, D2

: Drain

S

: Source

S

8.0

17.4±0.3

4.75 MAX.

1.8±0.2

4

Preliminary Data Sheet P14997EJ1V0DS00

NES2427P-60

RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE

(1) Fix to heat sink or mount surface completely with screws at the four holes of the flange.
(2) The recommended torque strength of the screws is 30 N typical using M2.3 type screws.
(3) The recommended flatness of the mount surface is less than ±10 µm (roughness of surface is

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Conditions Recommended Condition Symbol

∇∇∇

).

Partial Heating Pin temperature: 260 °C or below,

Time: 5 seconds or less (per pi n row)

For details of recommended soldering conditions, please contact your local NEC sales office.

−

Preliminary Data Sheet P14997EJ1V0DS00

5

[MEMO]

NES2427P-60

6

Preliminary Data Sheet P14997EJ1V0DS00

[MEMO]

NES2427P-60

Preliminary Data Sheet P14997EJ1V0DS00

7

NES2427P-60

CAUTION

The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.

•

The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4