Page 1
DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
OUTLINE DIMENSIONS (Unit: mm)
2
φ
2 × 3.2 ±0.3
2 ±0.2 3 ±0.2 2 ±0.2
11
offers a high degree of reliability.
FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
+0.05
–0.02
0.1
11
3
3.6 ±0.53.6 ±0.5
12.4 ±0.2
9.2 ±0.2
4.6 ±0.2
5.85 ±0.2 2.58 ±0.3
• Emitter Ballasting
• 24 V Operation
4.2 ±0.4
1 - EMITTER
2 - BASE
3 - COLLECTOR
6.1 ±0.3
2.4 ±0.2
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage VCBO 45 V
Collector to Emitter Voltage
Emitter to Base Voltage VEBO 3V
Collector to Emitter Voltage
Collector Current IC 1.5 A
Power Dissipation PT 19.4 W
Thermal Resistance Rth(j-c) 9 ˚C/W
Junction Temperature Tj 200 ˚C
Storage Temperature Tstg –65 to 150 ˚C
SYMBOL
VCER R = 10 Ω 30 V
VCEO 18 V
SPECIFIED CONDITION RATINGS UNIT
Document No. P11582EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NEL2004F02-24
PARAMETER
Collector to Emitter Cutoff ICES VCE = 24 V 3 mA
Current
Collector to Emitter Voltage
(Base to Emitter Registor = 10 Ω)
Collector to Emitter Voltage
(Open Base)
Collector to Base Voltage VCBO IC = 3 mA 45 85 V
(Open Emitter)
Emitter to Base Voltage VEBO IC = 8 mA 3 4.4 V
(Open Collector)
DC Forward Current Gain hFE VCE = 5 V, IC = 0.3 A 30 100 150
Output Capacitance Cob VCE = 24 V, f = 1 MHz 6.2 pF
SYMBOL
VCER IC = 3 mA, R = 10 Ω 30 85 V
VCEO IC = 3 mA 18 22 V
SPECIFIED CONDITION MIN. TYP. MAX. UNIT
2
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NEL2004F02-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 40 mA, 5 7 W
VCC = 24 V, CLASS AB
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.2 W, Iq = 40 mA, 9.5 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 5 W PEP, –34 dBc
CLASS A OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 250 mA, 2 W
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.01 W, Iq = 250 mA, 12 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 1 W PEP, –37 dBc
η
c f = 1.97 GHz, Pout = PIdB, Iq = 40 mA, 40 46 %
VCC = 24 V, CLASS AB
VCC = 24 V, CLASS AB
VCC = 24 V, Iq = 40 mA, CLASS AB
VCC = 20 V, CLASS A
η
c f = 1.97 GHz, Pout = PIdB, Iq = 250 mA, 35 %
VCC = 20 V, CLASS A
VCC = 20 V, CLASS A
VCC = 20 V, Iq = 250 mA, CLASS A
3
Page 4
Gain (dB)
13
NEL2004F02-24
f = 1970 MHz
12
11
10
9
8
1 W 4 W
20 24 28 32 36
–25
38
η
50
40
30
20
Pout (dBm)
f1 = 1970 MHz
f2 = 1970.1 MHz
Class AB, Vcc = 24 V
I
Class A, V
I
c (%)
q = 40 mA
cc = 20 V
q = 250 mA
Class AB, V
I
cc = 24 V
q = 40 mA
–30
–35
–40
IM (dBc)
–45
–50
–55
IM3
IM5
IM7
Class A, V
I
cc = 20 V
q = 250 mA
–60
20 24 28 32 36
40
Pout (dBm) ··· PEP
4
Page 5
S-PARAMETER
NEL2004 Class A
V
CC = 20 V, Icq = 0.25 A
NEL2004F02-24
FREQUENCY
GHz MAG ANG (DEG) MAG ANG (DEG) MAG ANG (DEG) MAG ANG (DEG)
1.70 0.70 171 0.05 –26 1.68 –16 0.77 –149
1.71 0.69 171 0.05 –26 1.70 –18 0.78 –150
1.72 0.69 172 0.05 –27 1.71 –19 0.79 –150
1.73 0.69 172 0.05 –29 1.71 –20 0.79 –150
1.74 0.69 172 0.05 –30 1.69 –22 0.80 –150
1.75 0.69 173 0.05 –31 1.67 –23 0.81 –151
1.76 0.69 173 0.05 –31 1.65 –24 0.81 –151
1.77 0.69 173 0.05 –32 1.66 –25 0.82 –151
1.78 0.69 173 0.05 –33 1.67 –26 0.83 –152
1.79 0.69 174 0.04 –35 1.67 –28 0.84 –152
1.80 0.69 174 0.04 –37 1.65 –30 0.84 –152
1.81 0.69 175 0.05 –37 1.62 –31 0.85 –153
1.82 0.69 175 0.05 –38 1.60 –32 0.85 –153
1.83 0.70 175 0.05 –45 1.61 –32 0.86 –153
1.84 0.69 175 0.04 –49 1.62 –34 0.87 –154
1.85 0.70 175 0.04 –50 1.62 –35 0.87 –154
1.86 0.70 176 0.04 –46 1.60 –38 0.88 –155
1.87 0.70 176 0.04 –46 1.56 –38 0.89 –155
1.88 0.70 176 0.04 –47 1.54 –39 0.89 –156
1.89 0.70 177 0.04 –49 1.55 –39 0.90 –156
1.90 0.71 177 0.03 –50 1.56 –41 0.90 –157
1.91 0.71 177 0.03 –51 1.56 –43 0.91 –157
1.92 0.71 177 0.03 –52 1.53 –46 0.92 –158
1.93 0.71 178 0.03 –54 1.50 –46 0.92 –158
1.94 0.72 178 0.03 –55 1.48 –47 0.92 –159
1.95 0.72 178 0.03 –57 1.48 –47 0.93 –159
1.96 0.73 178 0.03 –58 1.48 –49 0.93 –160
1.97 0.73 178 0.03 –60 1.47 –50 0.94 –160
1.98 0.73 179 0.03 –61 1.45 –52 0.94 –161
1.99 0.74 179 0.03 –62 1.44 –53 0.94 –161
2.00 0.74 179 0.02 –64 1.42 –54 0.95 –162
S11 S12 S21 S22
NEL2004 Class AB
VCC = 24 V, Icq = 0.04 A
FREQUENCY
GHz MAG ANG (DEG) MAG ANG (DEG) MAG ANG (DEG) MAG ANG (DEG)
1.70 0.75 167 0.04 –26 1.09 –25 0.87 –148
1.71 0.75 167 0.04 –27 1.11 –26 0.87 –149
1.72 0.75 167 0.04 –28 1.11 –28 0.88 –149
1.73 0.75 167 0.04 –29 1.12 –29 0.88 –149
1.74 0.74 167 0.04 –30 1.11 –31 0.88 –149
1.75 0.74 167 0.04 –30 1.10 –32 0.89 –150
1.76 0.74 168 0.04 –30 1.09 –33 0.89 –150
1.77 0.73 168 0.04 –31 1.09 –33 0.89 –150
1.78 0.73 168 0.04 –33 1.11 –34 0.90 –151
1.79 0.73 168 0.04 –35 1.11 –36 0.90 –151
1.80 0.73 168 0.04 –36 1.10 –39 0.91 –152
1.81 0.73 169 0.04 –39 1.09 –40 0.91 –152
1.82 0.73 169 0.04 –41 1.08 –41 0.91 –152
1.83 0.73 169 0.03 –42 1.08 –41 0.92 –153
1.84 0.72 169 0.03 –42 1.09 –42 0.92 –153
1.85 0.72 169 0.03 –43 1.10 –44 0.92 –153
1.86 0.72 169 0.03 –45 1.08 –46 0.93 –154
1.87 0.72 170 0.03 –45 1.06 –47 0.93 –154
1.88 0.72 170 0.03 –46 1.05 –48 0.94 –155
1.89 0.72 170 0.03 –48 1.06 –48 0.94 –155
1.90 0.72 170 0.03 –50 1.07 –50 0.94 –155
1.91 0.72 170 0.03 –52 1.07 –52 0.94 –156
1.92 0.72 171 0.03 –52 1.06 –54 0.95 –156
1.93 0.72 171 0.03 –53 1.04 –55 0.95 –157
1.94 0.72 171 0.03 –54 1.03 –56 0.95 –157
1.95 0.72 172 0.03 –57 1.03 –56 0.95 –158
1.96 0.72 172 0.03 –59 1.04 –58 0.96 –158
1.97 0.72 172 0.02 –61 1.03 –60 0.96 –159
1.98 0.72 173 0.02 –62 1.02 –61 0.96 –159
1.99 0.72 173 0.02 –64 1.01 –63 0.96 –160
2.00 0.72 173 0.02 –66 1.00 –64 0.97 –160
S11 S12 S21 S22
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Page 6
NEL2004F02-24 Zin/Zout
T
0.3
C
A
E
R
E
V
I
T
I
S
O
P
0.2
1
0.1
0.1
0.1
4
0.2
Z
out
3
2
1
T
N
E
N
O
P
M
O
C
E
C
0.3
0.4
A
C
N
+JX
N
A
0.4
E
T
C
C
2
0.2
A
M
O
Zo
–JX
E
R
N
E
N
O
P
Z
in
3
Zo
E
V
I
T
A
0.5
0.5
T
4
1: 1.8 GHz
2: 1.9
0.3
3: 1.97
4: 2.0
G
E
N
0.6
0.8
0.7
0.6
0.4
0.500.6
0.7
0.7
RESISTANCE COMPONENT
R
Zo
0.8
NEL2004F02-24
1.0
0.9
0.8
0.9
1.0
0.9
0.2
1.0
0.2
0.4
0.4
0.2
0.4
0.6
0.2
1.2
0.6
0.4
0.6
0.8
0.6
1.2
0.8
1.4
0.8
1.2
1.0
1.0
0.8
1.0
1.6
1.0
1.8
1.4
1.4
2.0
1.6
1.6
1.8
3.0
1.8
2.0
4.0
2.0
5.0
3.0
3.0
10
4.0
5.0
4.0
20
10
20
50
50
50
20
10
5.0
ZO = 50 ohm
f [GHz]
1.80
1.90
1.97
2.00
[ohm]
Z
7.2 + j11
8.0 + j10
10.4 + j11
13.5 + j11
Z
in
Z
out
Z
out
[ohm]
4.8 – j8.4
4.1 – j7.8
3.7 – j7.4
3.0 – j6.1
in
6
Page 7
Circuit Drawing
1
40 mm
Thru
hole
1 mm
× 4
1822
6
1
2
121
28
3.3
1
3
61
3.15
2
15
25
1
0.5 0.5
16
3
14 15 1 3
23.3
2.3
228
251
1
1
6
40 mm
1
6
15
1
3
1
50 mm
input output
φ
SUBSTRATE
DICLAD 522T
®
THICKNESS = 0.79 mm
DOUBLE SIDE 35 m Cu
r
= 2.6
ε
µ
7.6
6
NEL2004F02-24
7
Page 8
NEL2004F02-24
Components Layout
V
BB
D1
R1
C2
R2
L1
C3
C4
V
–
CC
C1
input output
D1:
R1: 5.1 Ω
R2: 30 Ω
L1: 5 mm 10T Coil
φ
VO6C
C1, C2, C3, C5:
C4:
22 F, 50 V
µ
Electrolytic Capacitor
MURATA
47 pF
C5
8
Page 9
APPLICATION
NEL2004F02-24
= Amplifier Diagrams =
46 mW
95 mW
40 mW
NEL2001 NEL2012 NEL2035
NEL2001
NEL2004
NEL2012
NEL2012 NEL2035
30 W
NEL2035 × 2
50 W
NEL2035 × 4
100 W
9
Page 10
[MEMO]
NEL2004F02-24
10
Page 11
[MEMO]
NEL2004F02-24
11
Page 12
NEL2004F02-24
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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