Datasheet NE960R575, NE962R575, NE961R500, NE960R500 Datasheet (NEC)

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE960R5 SERIES

0.5 W X, Ku-BAND POWER GaAs MES FET

DESCRIPTION

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : P

• High Linear Gain : 9.0 dB TYP.

• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, I

o (1 dB)

= +27.5 dBm TYP.

ORDERING INFORMATION

Part Number Package Supplying Form NE960R500 NE961R500 NE960R575 NE962R575

Remark

00 (CHIP)

75

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575)

ESD protective envelope

Dset

= 180 mA, f = 14.5 GHz

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14387EJ1V0DS00 (1st edition) Date Published July 1999 N CP(K) Printed in Japan

1999©

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

NE960R5 SERIES

Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Forward Current I Gate Reverse Current I Total Power Dissipat i on P Channel Temperature T Storage Temperature T

Notes 1.

NE962R575

NE961R500

2.

DS

GSO

D

GF

GR

T

ch

stg

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Condition MIN. TYP. MAX. Unit Drain to Source Voltage V Gain Compression Gcomp Channel Temperature T

DS

ch

15 V

Note 1

–7 (−9

)

0.7 A +5.0 mA –5.0 mA

Note 2

5.0 (4.2

)

175

–65 to +175

−

−−

9.0 9.0 V

3.0 dB

+130

V

W

°

C

°

C

°

C

ELECTRICAL CHARACTERISTICS

(TA = +25

Saturated Drain Current I Pinch-off Voltage V Gate to Drain Break Down Voltage Gate to Source Break Down

Voltage Thermal Resistance R Output Power at Pin = +19 dBm P Output Power at 1 dB Gain

Compression Point Power Added Efficiency at P Linear Gain

°°°°

C, unless otherwise specified, using NEC standard test fixture.)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Note 1

Note 2

P

Note 1

Notes 1.

Note 1

Except NE962R575 NE962R575 only

2.

NE961R500

3.

o (1dB)

DSS

BV BV

out

o (1 dB)

η

add

G

VDS = 1.5 V, VGS = 0 V 0.18 0.4 0.7 A

p

VDS = 2.5 V, ID = 2 mA –2.5 –1.8 –0. 5 V

gd

Igd = 2 mA 15

gs

Igs = 2 mA 9.0

th

Channel to Case f = 14.5 GHz, VDS = 9.0 V

Ω

g

= 1 k

R

Dset

I

= 180 mA (RF OFF)

L

−−

25.5 26.5

−

8.0 9.0

−−

27.5

30

30 (35

V V

Note 3

)

°C/W

−

dBm dBm

%

dB

Remark

2

DC and RF performance is 100 % testing.

Preliminary Data Sheet P14387EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER

30

NE960R5 SERIES

60

25

(dBm)

out

20

Output Power P

15

10

5 10152025

300

250

(mA)

D

f = 14.5 GHz (1 tone),

DS

= 9 V, I

Dset

V

g

= 1 kΩ

R

= 180 mA

Input Power Pin (dBm)

DRAIN CURRENT AND GAIN vs. INPUT POWER

45

(%)

add

η

30

Power Added Efficiency

15

0

12

10

200

150

Drain Current I

100

5 10152025

1.5

1.0

(mA)

g

0.5

0.0

Gate Current I

0.5 5 10152025

Input Power P

in

(dBm)

GATE CURRENT vs. INPUT POWER

Input Power P

in

(dBm)

8

Gain (dB)

6

4

Preliminary Data Sheet P14387EJ1V0DS00

3

TYPICAL S-PARAMETER [NE960R575]

NE960R5 SERIES

TEST CONDITIONS: VDS = 9 V, I

FREQUENCY S

11

Dset

= 180 mA

21

S

12

S

22

S

GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

0.87

0.84

0.82

0.81

0.79

0.73

0.69

0.62

0.63

0.76

0.79

0.87

0.83

–140 –154 –160 –163 –167 –175

171 147 109

47

–21 –45 –53 –60

4.36

2.98

2.36

2.08

1.99

1.96

2.02

2.20

2.30

2.22

0

1.62

1.30

0.90

0.60

0.43

85 68 54 42 33 18

–20 –51

–88 –124 –144 –172

166

150

0.042

0.040

0.043

0.047

0.055

1

0.066

0.076

0.083

0.063

0.032

0.017

0.022

0.034

0.037

23 19 22 32 34 35 30 18

–4 –41 –82

–141

128 101

82

0.23

0.25

0.30

0.32

0.34

0.36

0.37

0.38

0.45

0.57

0.61

0.66

0.73

0.75

START 2 GHz, STOP 16 GHz, STEP 1 GHz

11

0.5

S

1.0

2.0 +135° +45°

S

12

+90°

–131 –143 –149 –154 –160 –168

178 159 136

95 65 49 27 11 –2

0.5 1.0 2.0

0

2 GHz

16 GHz

2 GHz

–2.0

R

max.

R

= 1

–45°

= 5

–0.5

–1.0

S

21

+90°

+135° +45°

±180° 0°

16 GHz

–135°

–90°

16 GHz

∞

±180° 0°

–135°

–90°

22

S

1.0

0.5

0.5 1.0 2.0

0

2 GHz

–0.5

–1.0

2 GHz

R

2.0

–2.0

R

–45°

max.

16 GHz

max.

= 0.1

∞

= 1

4

Preliminary Data Sheet P14387EJ1V0DS00

[NE960R500]

NE960R5 SERIES

−

132 146 155 158 161 162 163 165 170 174 179 172 172 170 167 167 163

Dset

= 180 mA

6.53

4.06

2.74

2.24

1.89

1.62

1.32

1.24

1.12

1.04

0.94

0.83

0.65

0.60

0.57

0.54

0.40

21

S

−

160 168 148 121

−

93

−

66

−

40

−

11 16 43 64

86 114 152 178 150 122

0.038

0.037

0.038

0.037

0.033

0.032

0.039

0.032

0.041

0.025

0.038

0.028

0.032

0.045

12

S

−

90 120 155 177 137 109

−

64

−

35

47

78 108 153 171 142

−

98

−

80

5

0.23

0.25

0.29

0.34

0.39

0.44

0.48

0.53

0.56

0.58

0.61

0.63

0.65

0.68

0.67

22

S

TEST CONDITIONS: VDS = 9 V, I

FREQUENCY S

GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

0.87

0.85

0.86

0.85

0.84

0.85

0.86

0.85

0.87

0.86

0.87

11

Caution S-parameters include bond wires.

Gate : Total 2 wires, 1 per bond pad, 300 Drain : Total 2 wires, 1 per bond pad, 300

µµµµ

m long each wire.

µµµµ

m long each wire. Source: No bond wires. Wire : 25

µµµµ

m diameter, gold.

−

105 118 124 131 133 135 137 138 139 142 146 149 153 157 159 164 175

Preliminary Data Sheet P14387EJ1V0DS00

5

[NE961R500]

NE960R5 SERIES

−

134 149 159 164 168 168 171 175 178 171 164 160 155 153 151 148 144

Dset

= 180 mA

6.37

3.73

2.64

2.18

1.83

1.58

1.32

1.24

1.14

1.03

0.94

0.87

0.69

0.68

0.64

0.62

0.47

21

S

−

163 170 151 125

−

97

−

69

−

43

−

14 13 40 65

89 116 153 176 149 114

0.040

0.042

0.047

0.053

0.060

0.061

0.072

0.098

0.097

0.112

0.153

0.111

0.189

0.145

0.192

0.205

0.267

12

S

−

105 140 176 140

−

99

−

67

−

18

49

85 113 146 178 161 119

−

81

−

69

6

0.17

0.18

0.20

0.24

0.29

0.34

0.38

0.43

0.47

0.50

0.53

0.56

0.57

0.58

22

S

TEST CONDITIONS: VDS = 9 V, I

FREQUENCY S

GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.)

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

0.81

0.79

0.78

0.79

0.78

0.77

0.76

0.77

0.79

0.81

0.80

0.81

11

Caution S-parameters include bond wires.

Gate : Total 2 wires, 1 per bond pad, 300 Drain : Total 2 wires, 1 per bond pad, 300 Source: Total 4 wires, 1 per bond pad, 300 Wire : 25

µµµµ

m diameter, gold.

µµµµ

m long each wire.

µµµµ

m long each wire.

µµµµ

m long each wire.

−

90 107 118 127 132 136 138 139 139 141 145 149 156 161 166 174 175

6

Preliminary Data Sheet P14387EJ1V0DS00

PACKAGE DIMENSIONS

PACKAGE CODE-75 (Unit: mm)

NE960R5 SERIES

PHYSICAL DIMENSIONS

NE960R500 (CHIP) (Unit:

990

223

Gate

1.8

φ

Drain

9.8 MAX.

µµµµ

m) NE961R500 (CHIP) (Unit:

223544

2.7

7.0

0.5

2.3

0.9 MAX.

228

2.7

1.13

3.0 MIN. 3.0 MIN.

2.3

1000

µµµµ

m)

228544

Drain

Source

G

200 90 305

Remark Chip thickness

G Source is grounded through via hole.

µ

: 100 m : Gate

10010085

105

570

Drain

Source

Remark Chip thicknessG: 140 m

G

200 90 310

µ

: Gate

10510085

580

110

Preliminary Data Sheet P14387EJ1V0DS00

7

NE960R5 SERIES

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Conditions Recommended Condition Sy m bol

Partial Heating Pin temperature: 260°C

Time: 5 seconds or less (per pi n row) Exposure limit: None

After opening the dry pack, keep it in a place below 25°C and 65 % RH for the allowable storage period.

Note

–

Caution Do not use different soldering methods together (except for partial heating).

CHIP HANDLING

DIE ATTACHMENT

Die attach can be accomplished with a Au-Sn (300 ±10°C) performs in a forming gas environment. Epoxy die

attach is not recommended.

BONDING

Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 to 8 % elongation) 30 microns or

less in diameter.

Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be

kept within a 280°C_5 minute curve. If longer periods are required, the temperature should be lowered.

PRECAUTIONS

The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean

environment.

The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge.

8

Preliminary Data Sheet P14387EJ1V0DS00

[MEMO]

NE960R5 SERIES

Preliminary Data Sheet P14387EJ1V0DS00

9

[MEMO]

NE960R5 SERIES

10

Preliminary Data Sheet P14387EJ1V0DS00

[MEMO]

NE960R5 SERIES

Preliminary Data Sheet P14387EJ1V0DS00

11

NE960R5 SERIES

Caution

The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.

• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

M7 98. 8