Datasheet NDS0605 Datasheet (Fairchild)

Page 1

July 2002

NDS0605

P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features

• −0.18A, −60V. R

• Voltage controlled p-channel small signal switch

• High density cell design for low R

= 5 Ω @ VGS = −10 V

DS(ON)

• High saturation current

NDS0605

SOT-23

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

Drain-Source Voltage

DSS

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1)

– Pulsed

TJ, T

STG

Maximum Power Dissipation (Note 1) 0.36

Derate Above 25°C

Operating and Storage Junction Temperature Range

Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds

−60

±20

−0.18

−1

2.9

−55 to +150 °C

300

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1) 350

W P

mW/°C

°C

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

65D NDS0605 7’’ 8mm 3000 units

2002 Fairchild Semiconductor Corpora tion

NDS0605 Rev B1(W)

Page 2

NDS0605

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1

DSS

Breakdown Voltage Temperature Coefficient

Gate–Body Leakage.

GSS

= 0 V, ID = –10 µA

= –10 µA,Referenced to 25°C

= –48 V,VGS = 0 V TJ = 125°C

= ±20 V, VDS = 0 V

–60 V

–53

mV/°C

µA

–500

±100

µA

On Characteristics (Note 2)

Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V

GS(th)

∆VGS(th) ∆TJ

DS(on)

On–State Drain Current VGS = –10 V, VDS = – 10 V –0.6 A

D(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

= –250 µA,Referenced to 25°C

= –10 V, ID = –0.5 A

= –4.5 V, ID = –0.25 A

= –10 V,ID = –0.5 A,TJ=125°C

1.0

1.3

1.7

5.0

7.5 10

mV/°C

Ω

gFS Forward Transconductance VDS = –10V, ID = – 0.2 A 0.07 0.43 S

Dynamic Characteristics

Input Capacitance 79 pF

iss

Output Capacitance 10 pF

oss

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = –15 mV, f = 1.0 MHz 10

= –25 V, V

f = 1.0 MHz

= 0 V,

4 pF

Ω

Switching Characteristics (Note 2)

Turn–On Delay Time 2.5 5 ns

d(on)

tr Turn–On Rise Time 6.3 12.6 ns

Turn–Off Delay Time 10 20 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 1.8 2.5 nC

Qgs Gate–Source Charge 0.3 nC

Qgd Gate–Drain Charge

= –25 V, ID = – 0.2 A,

= –10 V, R

= –48 V, ID = –0.5 A,

= –10 V

GEN

= 6 Ω

7.5 15 ns

0.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current

VSD Drain–Source Diode Forward

VGS = 0 V, IS = –0.5 A(Note 2) –0.8 –1.5 V

Voltage

trr Diode Reverse Recovery Time 17 nS

Qrr Diode Reverse Recovery Charge

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

1. R

θJA

the drain pins. R

is guaranteed by design while R

θJC

a) 350°C/W when mounted on a

minimum pad..

θCA

= –0.5A

= 100 A/µs (Note 2)

iF/dt

is determined by the user's board design.

15 nC

–

0.18

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NDS0610 Rev B1(W)

Page 3

Typical Characteristics

NDS0605

1.4

VGS=-10V -4.5V

-6.0V

1.2

0.8

0.6

, DRAIN CURRENT (A)

0.4

-I

0.2

0123456

, DRAIN TO SOURCE VOLTAGE (V)

-V

-4.0V

-3.5V

-3.0V

-2.5V

2.2

VGS=-3.0V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-3.5V

-4.0V

-I

-4.5V

-6.0V

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = -0.5A

1.6 V

= -10V

1.4

1.2

, NORMALIZED

DS(ON)

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

, ON-RESISTANCE (OHM)

DS(ON)

TA = 25oC

246810

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

-10V

ID = -0.25A

Figure 3. On-Resistance Variation with

Temperature.

1.2

VDS = -10V

0.8

0.6

0.4

, DRAIN CURRENT (A)

-I

0.2

11.522.533.544.5

, GATE TO SOURCE VOLTAGE (V)

-V

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001

0.2 0.4 0.6 0.8 1 1.2

with Source Current and Temperature.

Gate-to-Source Voltage.

TA = 125oC

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

NDS0610 Rev B1(W)

Page 4

)

Typical Characteristics

NDS0605

ID = -0.5A

, GATE-SOURCE VOLTAGE (V)

-V

00.40.81.21.62

VDS = -12V

, GATE CHARGE (nC)

-24V

-48V

100

CAPACITANCE (pF)

0 102030405060

OSS

RSS

, DRAIN TO SOURCE VOLTAGE (V)

-V

ISS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

LIMIT

DS(ON)

0.1

, DRAIN CURRENT (A)

-I

0.001

VGS = -10V

SINGLE PULSE

0.01 R

= 350oC/W

θJA

= 25oC

1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

100ms

10s

1ms

10ms

100us

P(pk), PEAK TRANSIENT POWER (W)

0.01 0.1 1 10 100

, TIME (sec)

SINGLE PULSE R

θJA

f = 1 MHz

= 0 V

= 350°C/W

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.2

0.1

0.01

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE

P(pk

- TA = P * R

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.

(t) = r(t) * R

= 350oC/W

(t)

/ t

NDS0610 Rev B1(W)

Page 5

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I1