Page 1
July 1996
NDP4050 / NDB4050
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
____________________________________________________________________________________________
15A, 50V. R
= 0.10Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP4050 NDB4050 Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 1 MΩ)
50 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs)
± 40
Drain Current - Continuous ± 15 A
- Pulsed ± 45
P
D
Total Power Dissipation 50 W
Derate above 25°C 0.33 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP4050 Rev. B
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Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche
VDD = 25 V, ID = 15 A 40 mJ
Energy
Maximum Drain-Source Avalanche Current 15 A
OFF CHARACTERISTICS
BV
I
DSS
DSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
Zero Gate Voltage Drain Current VDS = 50 V, V
= 0 V 250 µA
GS
50 V
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A 0.078 0.1
2 3 4 V
1.4 2.4 3.6
Ω
TJ = 125°C 0.12 0.165
I
g
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 7.5 A 3 5.7 S
15 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 165 200 pF
VDS = 25, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 50 100 pF
370 450 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 15 A
Turn - On Rise Time 70 100 ns
VGS = 10 V, R
GEN
= 25 Ω
8 20 ns
Turn - Off Delay Time 18 30 ns
Turn - Off Fall Time 37 50 ns
Total Gate Charge VDS = 48 V
Gate-Source Charge 3.2 nC
ID = 15 A, VGS = 10 V
12.7 17 nC
Gate-Drain Charge 7 nC
NDP4050 Rev. B
Page 3
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current 15 A
Maximum Pulsed Drain-Source Diode Forward Current 45 A
Source-Drain Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) 0.95 1.3 V
TJ = 125°C
Reverse Recovery Time VGS = 0 V, IF = 15 A,
Reverse Recovery Current 1.5 3.4 7 A
dIF/dt = 100 A/µs
0.88 1.2
25 46 100 ns
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 3 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
NDP4050 Rev. B
Page 4
Typical Electrical Characteristics
30
25
20
15
10
5
D
I , DRAIN-SOURCE CURRENT (A)
0
V = 20V
GS
12
10
9.0
8.0
7.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
2.2
I = 7.5 A
D
2
V = 10 V
GS
1.8
1.6
1.4
1.2
DS(ON)
R , NORMALIZED
1
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
6.0
5.0
2
V = 6.0V
1.8
1.6
1.4
1.2
1
DS(on)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
GS
7.0
8.0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
3
V = 10 V
GS
2.5
T = 125°C
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
J
25°C
9.0
10
12
20
-55°C
Figure 3. On-Resistance Variation
with Temperature.
20
V = 10V
DS
15
10
5
D
I , DRAIN CURRENT (A)
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 5. Drain Current Variation with Gate
Voltage and Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
V = V
1.1
1
0.9
th
0.8
V , NORMALIZED
0.7
GATE-SOURCE THRESHOLD VOLTAGE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
DS GS
I = 250µA
D
Figure 6. Gate Threshold Variation with
Temperature.
NDP4050 Rev. B
Page 5
Typical Electrical Characteristics (continued)
1.15
I = 250µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.9
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
700
500
300
200
100
CAPACITANCE (pF)
50
30
f = 1 MHz
V = 0V
GS
1 2 3 5 10 20 30 60
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
20
V = 0V
GS
10
5
T = 125°C
J
2
1
0.5
0.2
S
I , REVERSE DRAIN CURRENT (A)
0.1
0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
25°C
-55°C
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
20
I = 15A
iss
oss
C
rss
D
15
10
5
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 5 10 15 20
Q , GATE CHARGE (nC)
g
V = 12V
DS
24V
48V
Figure 9. Capacitance Characteristics.
V
DD
V
IN
D
V
GS
R
GEN
G
S
Figure 11. Switching Test Circuit.
Figure 10. Gate Charge Characteristics.
t t
on off
t
d(on)
R
L
V
OUT
V
OUT
r
90%
10%
DUT
t
d(off)
90%
10%
tt
f
INVERTED
90%
V
IN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDP4050 Rev. B
Page 6
Typical Electrical Characteristics (continued)
8
6
V = 15V
DS
T = -55°C
J
25°C
125°C
4
2
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
0 2 4 6 8 10
I , DRAIN CURRENT (A)
D
Figure 13. Transconductance Variation with
70
50
RDS(ON) LIMIT
20
10
1ms
10ms
50ms
V = 20V
2
D
I , DRAIN CURRENT (A)
1
0.5
1 2 5 10 30 50 70
GS
SINGLE PULSE
o
R = 3 C/W
JC
θ
T = 25°C
C
V , DRAIN-SOURCE VOLTAGE (V)
DS
DC
Figure 14. Maximum Safe Operating Area.
Drain Current and Temperature.
1
0.5
0.3
0.2
0.1
0.05
0.03
r(t), NORMALIZED EFFECTIVE
0.02
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t , TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 3.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
θ
100us
JC
θ
JC
1 2
Figure 15. Transient Thermal Response Curve.
NDP4050 Rev. B
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