Page 1
DATA SHEET
PHOTO DIODE
NDL5531P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φφφφ
µµµµ
30
m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
Small dark current ID = 5 nA
•
Small terminal capacitance Ct = 0.35 pF @ 0.9 V
•
High quantum efficiency
•
High speed response fC = 2.5 GHz @ M = 10
•
Detecting area size
•
Coaxial module with single mode fiber (SM-9/125)
η
= 90 % @ λ = 1 300 nm, M = 1
η
= 77 % @ λ = 1 550 nm, M = 1
φ
30 µm
(BR)R
NDL5531P
Optical Fiber:
SM-9/125
Length: 1 m MIN.
+0.0
φ
6.0
–0.1
6.9±0.3
–0.1
+0.0
6.0
231
Shrunk tube
φ
2.5
φ
0.45
φ
2.0
30.0 MAX.
12.5 MIN.
3.0±0.3
PACKAGE DIMENSIONS
in millimeters
NDL5531P1
Optical Fiber:
SM-9/125
Length: 1 m MIN.
φ
14.0±0.1
φ
3.9±0.5
6.9±0.3
φ
2– 2.2
1.5
7.0±0.3
231
18.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
Optical Fiber:
NDL5531P2
SM-9/125
Length: 1 m MIN.
Shrunk tube Shrunk tube
2.5
6.0
+0.0
–0.1
30.0 MAX.
+0.0
φ
6.0
–0.1
4.0±0.1
12.5 MIN.
3
12
4.0±0.3
φ
2.0
0.5±0.1
2.5±0.1
φ
231
12.0±0.1
16.0±0.2
φ
2.5
2– 2.5
2.0
30.0 MAX.
12.5 MIN.
φ
7.0±0.15
•
Document No. P11352EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The information in this document is subject to change without notice.
The mark
••••
shows major revised points.
1996©
Page 2
ORDERING INFORMATION
•
Part Number Available Connector Description
NDL5531P Without Connector No Flange
NDL5531PC With FC-PC Connector
NDL5531PD With SC-P C Connector
NDL5531P1 Without Connector Flat Mount Flange
NDL5531P1C With FC-PC Connector
NDL5531P1D With SC-P C Connector
NDL5531P2 Without Connector Vertical Flange
NDL5531P2C With FC-PC Connector
NDL5531P2D With SC-P C Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
NDL5531P Series
Forward Current I
Reverse Current I
Operating Case Temperature T
Storage Temperature T
F
R
C
stg
10 mA
0.5 mA
−40 to +85 °C
−40 to +85 °C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Reverse Breakdown Voltage V
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current I
Multiplied Dark Current I
Terminal Capacitance C
Cut-off Frequency f
Quantum Effici ency
Responsivity S λ = 1 300 nm, M = 1 0.80 0.94 A /W
Multiplication Factor M λ = 1 300 nm, Ipo = 1.0 µA3040
Excess Noise Factor
*2
(BR)R
δ
DM
η
ID = 100 µA 50 70 100 V
*1
D
VR = V
(BR)R
× 0.9 5 25 nA
0.2 %/°C
M = 2 to 10 1 5 nA
t
C
(BR)R
VR = V
× 0.9, f = 1 MHz 0.35 0.60 pF
M = 10 2.5 GHz
λ = 1 300 nm, M = 1 76 90 %
λ = 1 550 nm, M = 1 65 77
λ = 1 550 nm, M = 1 0.81 0.96
R
V
= V (@ ID = 1 µA)
x λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µA0.7
F M = 10, f = 35 MHz, B = 1 MHz 5
*1
*2
δ
=
F = M
(BR)R
V
< 25 °C + ∆T °C > −V
∆
T °C ⋅ V
X
(BR)R
< 25 °C
(BR)R
>
< 25 °C
>
2
Page 3
NDL5531P Series
TYPICAL CHARACTERISTICS (TC = 25 °°°°C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
η
60
40
20
Quantum Efficiency (%)
0
0.9 1.0 1.1 1.31.2 1.4 1.5 1.6 1.7
Wavelength λ ( m)
µ
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
–3
10
–4
10
–5
10
, lph (A)
–6
D
10
λ = 1 300 nm
po
= 1.0 A
I
Iph
µ
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
∆
0
–10
–60 –40 0 40 10080
Responsivity (Relative Value) S/S (%)
–20 20 60
DARK CURRENT vs.
REVERSE VOLTAGE
–6
10
–7
10
(A)
D
–8
10
–9
10
Dark Current I
–10
10
0 40 10080
C
T
20 60
Case Temperature T
TC = 85 ˚C
T
C
= 65 ˚C
= 25 ˚C
Reverse Voltage VR (V)
λ = 1 300 nm
C
(˚C)
C
= –20 ˚C
T
•
–7
10
–8
10
Dark Current, Photo Current I
–9
10
–10
10
0 20 40 60 10080
Reverse Voltage VR (V)
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
3
10
2
10
TC = –20 ˚C
D
I
10
1
TC = 25 ˚C
Multiplication Factor M
0
10
0 40 10080
20 60
Reverse Voltage VR (V)
TC = 65 ˚C
TC = 85 ˚C
3
Page 4
NDL5531P Series
TEMPERATURE DEPENDENCE OF DARK
CURRENT vs. MULTIPLIED DARK CURRENT
–6
(A)
10
DM
, I
D
–7
10
–8
10
–9
10
–10
10
–11
10
Dark Current, Multiplied Dark Current I
ID @ VR = 0.9 V
0–60 –40 40 80 100
20
Case Temperature T
λ = 1 300 nm
(BR)R
60–20
C
(˚C)
I
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
100
(GHz)
C
10
1
Cut-off Frequency f
0.1
1 100
10
Multiplication Factor M
λ = 1 300 nm
G × B = 50 GHz
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
2
(pF)
t
1
DM
0.5
0.2
Terminal Capacitance C
0.1
51 2 20 50 100
10
R
Reverse Voltage V
(V)
FREQUENCY RESPONSE
9
6
3
0
–3
Response (dB)
–6
–9
0
1.0 2.0 3.0 4.0 5.0
Frequency f (GHz)
λ = 1 300 nm
L
= 50 Ω
R
M = 10
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
50
20
10
5
Excess Noise Factor F
2
1
Multiplication Factor M
0.5
0.4
51 2 20 50 100
10
4
Page 5
NDL5531P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
(*1)
ferrule (*5)
(*2)
module body
30 mm min (*3)
18 mm min. (*4)
5
Page 6
InGaAs APD/PD FAMILY
•
Features APD PIN-PD
Packages
30 µm
φ
(for 2.5 Gb/s)
50 µm
φ
(for 2.5 Gb/s)
50 µm
φ
80 µm
φ
50 µm
φ
(for 2.5 Gb/s)
NDL5531P Series
80 µm
φ
Remarks
TO-18 type Can NDL5530
TO-18 type Can with
Micro Lens
Small Can
5.6 µm
φ
Chip on Carrier NDL5530C NDL5520C NDL5500C NDL5510C
Receptacle Module
Coaxial Module with
MMF
Coaxial Module with
SMF
NDL5531
NDL5531P
NDL5531P1
NDL5531P2
NDL5521P
NDL5521P1
NDL5521P2
NDL5500 NDL5510
*1
*1
*1
*1
*
*
NDL5561P
NDL5561P1
NDL5561P2
NDL5551P
NDL5551P1
NDL5551P2
NDL5553P
NDL5553P1
NDL5553P2
NDL5590P
NDL5590P1
NDL5590P2
NDL5553PS
NDL5553P1S
1
NDL5553P2S
1
*2
*2
*2
NDL5490L
NDL5490
NDL5421P
NDL5421P1
NDL5421P2
*3, 4
NDL5405L 3 pins
*3, 4
NDL5471RC
NDL5471RD
NDL5461P
NDL5461P1
NDL5461P2
NDL5481P
NDL5481P1
NDL5481P2
3 pins
3 pins
RC: FC receptacle
RD: SC receptacle
P1, P2: With flange
NDL5590P Series:
With Pre-AMP
*5
*5
*5
14-pin DIP Module
with TEC
6-pin BFY Module
with MMF
*1
For OTDR
*2
With GI-62.5/125
*3
Under development
*4
Internal pre-amplifier for 1 Gb/s
*5
For analog application (optical CATV)
Remark
Modules are available with FC-PC connector or optional SC-PC connector.
NDL5522P
NDL5506P
NDL5506PS
∆
NDL5422P
T = 45 K (@ IC = 1.1 A)
PS: With SMF
With Pre-AMP
6
Page 7
NDL5531P Series
REFERENCE
Document Name Document No.
NEC semiconductor device reliabilit y/ qualit y c ontrol system LEI-1201
Quality grades on NEC sem i conductor devices IEI-1209
Semiconductor devic e mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor sel ection guide X10679E
7
Page 8
NDL5531P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94. 11
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