Datasheet ndf08n60z-d Datasheet

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Page 1

NDF08N60Z, NDP08N60Z

N-Channel Power MOSFET 600 V, 0.95 W

Features

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Continuous Drain Current

TA = 100°C

Pulsed Drain Current,

@ 10 V

Power Dissipation P

Gate−to−Source Voltage V

Single Pulse Avalanche

Energy, I

ESD (HBM)

(JESD 22−A114)

RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, T

= 25°C) (Figure 14)

Peak Diode Recovery dv/dt 4.5 V/ns

Continuous Source

Current (Body Diode)

Maximum Temperature for

Soldering Leads

Operating Junction and Storage Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature v 7.5 A, di/dt ≤ 200 A/ms, VDD ≤ BV

2. I

= 7.5 A

Symbol NDF08N60Z NDP08N60Z Unit

DSS

esd

ISO

TJ, T

= 25°C unless otherwise noted)

600 V

7.5 (Note 1) 7.5 A

4.8 (Note 1) 4.8 A

30 (Note 1) 30 A

stg

35 139 W

30 V

235 mJ

4000 V

4500 V

7.5 A

260 °C

−55 to 150 °C

, TJ ≤ 150°C.

DSS

http://onsemi.com

DSS

600 V

TO−220FP

CASE 221D

STYLE 1

G (1)

DS(ON)

MARKING DIAGRAM

NDF08N60ZG

NDP08N60ZG

Gate Source

TO−220

CASE 221A

STYLE 5

A = Location Code Y = Year WW = Work Week G = Pb−Free Package

(MAX) @ 3.5 A

0.95 W

N−Channel

D (2)

S (3)

AYWW

Drain

July, 2010 − Rev. 0

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NDF08N60Z/D

Page 2

THERMAL RESISTANCE

Parameter Symbol NDF08N60Z NDP08N60Z Unit

Junction−to−Case (Drain)

Junction−to−Ambient Steady State (Note 3)

3. Insertion mounted

NDF08N60Z, NDP08N60Z

3.6 0.9

50 50

°C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Test Conditions Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Drain−to−Source Leakage Current

VGS = 0 V, ID = 1 mA BV

Reference to 25°C,

= 1 mA

VDS = 600 V, VGS = 0 V

25°C

125°C 50

Gate−to−Source Forward Leakage VGS = ±20 V I

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

VGS = 10 V, ID = 3.5 A R

On−Resistance

Gate Threshold Voltage

VDS = VGS, ID = 100 mA

Forward Transconductance VDS = 15 V, ID = 3.5 A g

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Reverse Transfer Capacitance C

Total Gate Charge

Gate−to−Source Charge Q

Gate−to−Drain (“Miller”) Charge Q

VDD = 300 V, ID = 7.5 A,

= 10 V

Plateau Voltage V

Gate Resistance R

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

= 300 V, ID = 7.5 A,

= 10 V, RG = 5 W

Fall Time t

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge Q

IS = 7.5 A, VGS = 0 V V

VGS = 0 V, VDD = 30 V

= 7.5 A, di/dt = 100 A/ms

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

DBV

DS(on)

DSS

GSS

GS(th)

iss

oss

rss

d(on)

d(off)

600 V

0.6 V/°C

0.82 0.95

3.0 4.5 V

6.3 S

1140

129

7.5

6.2 V

1.6

320 ns

2.2

1 mA

±10

1.6 V

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Page 3

NDF08N60Z, NDP08N60Z

TYPICAL CHARACTERISTICS

VGS = 10 V

7.0 V

6.5 V

, DRAIN CURRENT (A)

6.0 V

5.5 V

5.0 V

0 5 10 15 20 25

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

1.25

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

, DRAIN−TO−SOURCE RESISTANCE (W)

0.75

DS(on)

5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Region versus Gate−to−Source

Voltage

ID = 3.5 A

= 25°C

VDS = 25 V

, DRAIN CURRENT (A)

TJ = 150°C

TJ = 25°C

TJ = −55°C

345678910

, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

1.25 VGS = 10 V

1.20

TJ = 25°C

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

, DRAIN−TO−SOURCE RESISTANCE (W)

0.75

012345678910

DS(on)

, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

2.75

2.50

ID = 3.5 A

= 10 V

2.25

2.00

1.75

1.50

1.25

(NORMALIZED)

1.00

0.75

, DRAIN−TO−SOURCE RESISTANCE

0.50

0.25

DS(on)

−50 −25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1.15

1.10

1.05

1.00

0.95

, NORMALIZED BREAKDOWN VOLTAGE (V)

0.90

DSS

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ID = 1 mA

−50 −25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (°C)

Figure 6. BV

Variation with Temperature

DSS

Page 4

NDF08N60Z, NDP08N60Z

TYPICAL CHARACTERISTICS

100

TJ = 150°C

, LEAKAGE (mA)

DSS

TJ = 125°C

0.1 0 50 100 150 200 250 300 350 400 450 500 550 600

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Drain−to−Source Leakage Current

versus Voltage

15 14 13 12 11 10

9 8

6 5 4 3 2

, GATE−TO−SOURCE VOLTAGE (V)

0 4 8 12 16 20 24 28 32 36 40

Figure 9. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

2750

2500

2250

2000

1750

1500

1250

1000

750

C, CAPACITANCE (pF)

500

250

0.01 0.1 1 10 100

VDS = 300 V

Qg, TOTAL GATE CHARGE (nC)

iss

oss

rss

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 8. Capacitance Variation

350

300

250

= 7.5 A

= 25°C

200

150

100

, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C V

= 0 V

f = 1 MHz

1000

VDD = 300 V

= 7.5 A

= 10 V

100

t, TIME (ns)

1 10 100

, GATE RESISTANCE (W)

Figure 10. Resistive Switching Time Variation

versus Gate Resistance

10.0

d(off)

d(on)

1.0

, SOURCE CURRENT (A)

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

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TJ = 150°C

25°C

125°C

−55°C

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Diode Forward Voltage versus

Current

Page 5

DUTY CYCLE = 0.5

NDF08N60Z, NDP08N60Z

100

VGS v 30 V SINGLE PULSE

= 25°C

0.1

, DRAIN CURRENT (A)

0.01

0.1 1 10 100 1000

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

DS(on)

THERMAL LIMIT PACKAGE LIMIT

Figure 12. Maximum Rated Forward Biased

Safe Operating Area NDF08N60Z

1 ms

10 ms

LIMIT

10 ms100 ms

R(t) (C/W)

0.1

0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

PULSE TIME (s)

= 3.6°C/W

Steady State

Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N60Z

LEADS

HEATSINK

0.110″ MIN

Figure 14. Isolation Test Diagram

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

Order Number Package Shipping

NDF08N60ZG TO−220FP

(Pb−Free)

NDP08N60ZG TO−220AB

(Pb−Free)

http://onsemi.com

50 Units / Rail

(In Development)

Page 6

NDF08N60Z, NDP08N60Z

PACKAGE DIMENSIONS

TO−220 FULLPAK

CASE 221D−03

ISSUE K

SEATING

−T−

PLANE

−B−

123

G N

−Y−

3 PL

0.25 (0.010) Y

TO−220

CASE 221A−09

ISSUE AF

SEATING

−T−

PLANE

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03.

INCHES

DIMAMIN MAX MIN MAX

0.617 0.635 15.67 16.12

B 0.392 0.419 9.96 10.63 C 0.177 0.193 4.50 4.90 D 0.024 0.039 0.60 1.00

F 0.116 0.129 2.95 3.28 G 0.100 BSC 2.54 BSC H 0.118 0.135 3.00 3.43

J 0.018 0.025 0.45 0.63 K 0.503 0.541 12.78 13.73

L 0.048 0.058 1.23 1.47 N 0.200 BSC 5.08 BSC Q 0.122 0.138 3.10 3.50 R 0.099 0.117 2.51 2.96

S 0.092 0.113 2.34 2.87 U 0.239 0.271 6.06 6.88

STYLE 1:

PIN 1. GATE

2. DRAIN

3. SOURCE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88

F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93

J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27

V 0.045 --- 1.15 ---

Z --- 0.080 --- 2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NDF08N60Z/D