Datasheet NDB6051 Datasheet (Fairchild Semiconductor)

NDP6051 / NDB6051

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

May 1996

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

48 A, 50 V. R

= 0.022 Ω @ VGS= 10 V.

DS(ON)

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

______________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP6051 NDB6051 Units

V

DSS

V

DGR

V

GSS

Drain-Source Voltage 50 V Drain-Gate Voltage (RGS < 1 MΩ)

50 V

Gate-Source Voltage - Continuous ± 20 V

- Nonrepetitive (tP < 50 µs) ± 40

I

D

Drain Current - Continuous 48 A

- Pulsed 144

P

D

Total Power Dissipation @ TC = 25°C

100 W

Derate above 25°C 0.67 W/°C TJ,T T

L

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering purposes,

275 °C

1/8" from case for 5 seconds

NDP6051 Rev. C1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche

VDD = 25 V, ID = 48 A 300 mJ

Energy Maximum Drain-Source Avalanche Current 48 A

OFF CHARACTERISTICS

BV I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 50 V, V

GS

= 0 V

TJ = 125°C Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

50 V

250 µA

1 mA

-100 nA

ON CHARACTERISTICS (Note 1)

V

R

I g

GS(th)

DS(ON)

D(on)

FS

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.8 4 V

TJ = 125°C

1.4 2.2 3.6

Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A 0.018 0.022

TJ = 125°C

0.03 0.04 On-State Drain Current VGS = 10 V, VDS = 10 V 60 A Forward Transconductance

VDS = 10 V, ID = 24 A

14 S

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance 520 pF

f = 1.0 MHz

Reverse Transfer Capacitance 190 pF

1220 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = 30 V, ID = 48 A, Turn - On Rise Time 132 250 nS

VGS = 10 V, R

GEN

= 7.5 Ω

10 20 nS

Turn - Off Delay Time 28 55 nS Turn - Off Fall Time 80 150 nS

Total Gate Charge VDS = 24 V, Gate-Source Charge 8

ID = 48 A, VGS = 10V

37 53 nC

Gate-Drain Charge 22

NDP6051 Rev. C1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I ISM V

t I

S

SD

rr

Maximum Continuos Drain-Source Diode Forward Current 48 A Maximum Pulsed Drain-Source Diode Forward Current 144 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) 0.9 1.3 V

TJ = 125°C

Reverse Recovery Time VGS = 0 V, IF = 48 A, Reverse Recovery Current 2 8 A

dIF/dt = 100 A/µs

0.8 1.2

35 140 ns

THERMAL CHARACTERISTICS

R

JC

θ

R

JA

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1.5 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

NDP6051 Rev. C1

J

D

Typical Electrical Characteristics

100

80

60

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V = 12V

GS

10

9.0

8.0

7.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

2

I = 24A

D

1.75

V = 10V

GS

1.5

1.25

1

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature.

6.0

5.0

2.5

2

V = 6.0V

GS

7.0

1.5

DS(on)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100

I , DRAIN CURRENT (A)

8.0

9.0

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2.5

V = 10V

2.25

GS

2

1.75

T = 125°C

J

1.5

1.25

DS(on)

1

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100

I , DRAIN CURRENT (A)

25°C

D

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

10

-55°C

12

60

V = 10V

DS

50

40

30

20

D

I , DRAIN CURRENT (A)

10

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 5. Transfer Characteristics.

1.2

1.1

1

0.9

0.8

GS(th)

0.7

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

V = V

I = 250µA

D

Figure 6. Gate Threshold Variation With

GS

DS

Temperature.

NDP6051 Rev. C1

DS

Typical Electrical Characteristics (continued)

1.15

I = 250µA

D

1.1

1.05

1

DSS

BV , NORMALIZED

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature.

3000 2000

1000

500

300

CAPACITANCE (pF)

f = 1 MHz

200

V = 0V

GS

100

1 2 3 5 10 20 30 50

V , DRAIN TO SOURCE VOLTAGE (V)

C

iss

oss

rss

50 20

V = 0V

GS

5 2

1

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2 1.4

T = 125°C

J

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.

20

V = 12V

I = 48A

D

15

10

5

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 20 40 60 80

Q , GATE CHARGE (nC)

g

DS

24V

48V

Figure 9. Capacitance Characteristics.

V

DD

V

IN

R

D

V

GS

R

GEN

G

S

Figure 11. Switching Test Circuit.

L

DUT

V

OUT

Figure 10. Gate Charge Characteristics.

t t

on off

t

d(on)

r

t

d(off)

90%

V

OUT

V

IN

10%

50%

10%

PULSE WIDTH

Figure 12. Switching Waveforms.

50%

10%

90%

tt

90%

INVERTED

NDP6051 Rev. C1

f

Typical Electrical Characteristics (continued)

30

T = -55°C

J

25°C

24

18

V =10V

DS

125°C

12

6

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 10 20 30 40

I , DRAIN CURRENT (A)

D

Figure 13. Transconductance Variation with Drain

300

100

DS(ON)

R Limit

50

20 10

V = 10V

GS

SINGLE PULSE

5

D

I , DRAIN CURRENT (A)

2 1

0.5 1 2 3 5 10 20 30 50 70

o

R = 1.5 C/W

JC

θ

T = 25°C

C

V , DRAIN-SOURCE VOLTAGE (V))

DS

1ms

10ms

100ms

DC

Figure 14. Maximum Safe Operating Area.

Current and Temperature.

1

0.1

0.05

0.02

0.01

0.2

D = 0.5

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R = 1.5 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

θ

0.5

0.3

0.2

0.1

0.05

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

100µs

θ

JC

1 2

JC

Figure 15. Transient Thermal Response Curve.

NDP6051 Rev. C1