Datasheet ncv8405 Datasheet

NCV8405

Self-Protected Low Side Driver with Temperature and Current Limit

NCV8405 is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments.

Features

• Short−Circuit Protection

• Thermal Shutdown with Automatic Restart

• Overvoltage Protection

• Integrated Clamp for Inductive Switching

• ESD Protection

• dV/dt Robustness

• Analog Drive Capability (Logic Level Input)

• AEC−Q101 Qualified

• NCV Prefix for Automotive and Other Applications Requiring Site

and Change Control

• These Devices are Pb−Free and are RoHS Compliant

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V

(BR)DSS

(Clamped)

42 V

*Max current limit value is dependent on input

condition.

Gate Input

ESD Protection

R

DS(ON)

90 mW @ 10 V

Overvoltage

Protection

Temperature

Limit

TYP

Current

Limit

I

D

6.0 A*

Drain

Current

Sense

MAX

Typical Applications

• Switch a Variety of Resistive, Inductive and Capacitive Loads

• Can Replace Electromechanical Relays and Discrete Circuits

• Automotive / Industrial

Source

MARKING DIAGRAM

DRAIN

4

SOT−223

1

2

3

NCV8405STT1G SOT−223

NCV8405STT3G SOT−223

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

CASE 318E

STYLE 3

A = Assembly Location Y = Year W = Work Week 8402 = Specific Device Code G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

(Pb−Free)

4

AYW

8405 G

G

1

23

GATE

DRAIN

1000/Tape & Reel

4000/Tape & Reel

SOURCE

†

October, 2010 − Rev. 0

1 Publication Order Number:

NCV8405/D

NCV8405

MAXIMUM RATINGS (T

Drain−to−Source Voltage Internally Clamped V

Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW)

Gate−to−Source Voltage V

Continuous Drain Current I

Power Dissipation @ TA = 25°C (Note 1)

Thermal Resistance Junction−to−Ambient Steady State (Note 1)

Single Pulse Drain−to−Source Avalanche Energy

= 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, R

(V

DD

Load Dump Voltage VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms)

Operating Junction Temperature T

Storage Temperature T

= 25°C unless otherwise noted)

J

Rating

Junction−to−Ambient Steady State (Note 2)

G(ext)

@ TA = 25°C (Note 2) @ TT = 25°C (Note 1)

Junction−to−Tab Steady State (Note 1)

= 25 W, TJ = 25°C)

Symbol Value Unit

42 V

"14 V

Internally Limited

1.0

1.7

W

V

DSS

DGR

GS

D

P

D

11.4

R

q

JA

R

q

JA

R

q

JT

E

AS

V

LD

J

stg

130

72 11

275 mJ

53 V

−40 to 150 °C

−55 to 150 °C

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).

2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).

+

I

D

+

VGS

−

DRAIN

I

G

GATE

SOURCE

Figure 1. Voltage and Current Convention

VDS

−

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2

NCV8405

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Test Condition Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

VGS = 0 V, ID = 10 mA, TJ = 25°C

VGS = 0 V, ID = 10 mA, TJ = 150°C

V

(Note 5)

Zero Gate Voltage Drain Current

VGS = 0 V, VDS = 32 V, TJ = 25°C

VGS = 0 V, VDS = 32 V, TJ = 150°C

(Note 5)

Gate Input Current VDS = 0 V, VGS = 5.0 V I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS = VDS, ID = 150 mA

Gate Threshold Temperature Coefficient V

Static Drain−to−Source On−Resistance

VGS = 10 V, ID = 1.4 A, TJ = 25°C

V

GS(th)/TJ

R

VGS = 10 V, ID = 1.4 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 1.4 A, TJ = 25°C

VGS = 5.0 V, ID = 1.4 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 0.5 A, TJ = 25°C

VGS = 5.0 V, ID = 0.5 A, TJ = 150°C

(Note 5)

Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A V

SWITCHING CHARACTERISTICS (Note 5)

Turn−ON Time (10% V

Turn−OFF Time (90% VIN to 10% ID) t

Slew−Rate ON (70% VDS to 50% VDS)

Slew−Rate OFF (50% VDS to 70% VDS) dVDS/dt

to 90% ID)

IN

VGS = 10 V, VDD = 12 V

= 2.5 A, RL = 4.7 W

I

D

VGS = 10 V, VDD = 12 V,

= 4.7 W

R

L

−dVDS/dt

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)

Current Limit

VDS = 10 V, VGS = 5.0 V, TJ = 25°C

VDS = 10 V, VGS = 5.0 V, TJ = 150°C

(Note 5)

VDS = 10 V, VGS = 10 V, TJ = 25°C

VDS = 10 V, VGS = 10 V, TJ = 150°C

(Note 5)

Temperature Limit (Turn−off)

Thermal Hysteresis

Temperature Limit (Turn−off)

Thermal Hysteresis

VGS = 5.0 V (Note 5)

VGS = 5.0 V

VGS = 10 V (Note 5)

VGS = 10 V

T

DT

T

DT

GATE INPUT CHARACTERISTICS (Note 5)

Device ON Gate Input Current

VGS = 5 V ID = 1.0 A

VGS = 10 V ID = 1.0 A

Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

Thermal Limit Fault Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Electro−Static Discharge Capability

Human Body Model (HBM)

Machine Model (MM) 400

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Fault conditions are viewed as beyond the normal operating range of the part.

5. Not subject to production testing.

(BR)DSS

I

DSS

GSSF

GS(th)

DS(on)

SD

t

ON

OFF

I

LIM

LIM(off)

LIM(on)

LIM(off)

LIM(on)

I

GON

I

GCL

I

GTL

ESD

ON

42 46 51

42 45 51

0.5 2.0

2.0 10

50 100

1.0 1.6 2.0 V

4.0 −mV/°C

90 100

165 190

105 120

185 210

105 120

185 210

1.05 V

20

110

1.0

0.4

6.0 9.0 11

3.0 5.0 8.0

7.0 10.5 13

4.0 7.5 10

150 180 200

15

150 165 185

15

50

400

0.05

0.4

0.22

1.0

4000

V

mA

mW

ms

V/ms

A

°C

mA

V

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3

NCV8405

0

TYPICAL PERFORMANCE CURVES

10

T

= 25°C

Jstart

(A)

L(max)

I

1

10 100

T

Jstart

= 150°C

L (mH)

Figure 2. Single Pulse Maximum Switch−off

Current vs. Load Inductance

100

(A)

10

L(max)

I

T

Jstart

= 25°C

1000

T

= 25°C

Jstart

(mJ)

100

max

E

10

10 10

T

Jstart

= 150°C

L (mH)

Figure 3. Single Pulse Maximum Switching

Energy vs. Load Inductance

1000

T

= 25°C

(mJ)

max

E

100

Jstart

T

Jstart

= 150°C

T

= 150°C

Jstart

1

110

TIME IN CLAMP (ms)

Figure 4. Single Pulse Maximum Inductive

Switch−off Current vs. Time in Clamp

10

110

TIME IN CLAMP (ms)

Figure 5. Single Pulse Maximum Inductive

Switching Energy vs. Time in Clamp

12

(A)

D

I

14

12

10

9 V

8 V

7 V

6 V

8

5 V

6

10 V

4 V

3 V

TA = 25°C

(A)

D

I

VDS = 10 V

10

8

6

4

2

0

0123 45

VGS = 2.5 V

VDS (V)

Figure 6. Output Characteristics

2

0

12345

VGS (V)

Figure 7. Transfer Characteristics

−40°C 25°C

100°C

150°C

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4

NCV8405

0

TYPICAL PERFORMANCE CURVES

300

250

200

(mW)

150

DS(on)

R

100

50

2.0

1.75

1.5

1.25

1.0

0.75

(VGS = 5 V, TJ = 25°C)(NORMALIZED)

0.5

DS(on)

−40 −20 0 20 40 60 80 100 120 140

R

150°C, ID = 1.4 A

150°C, ID = 0.5 A

100°C, ID = 1.4 A

100°C, ID = 0.5 A

VGS = 5 V

T (°C)

DS(on)

25°C, ID = 1.4 A

25°C, ID = 0.5 A

VGS = 10 V

vs. Temperature

−40°C, ID = 1.4 A

−40°C, ID = 0.5 A

345678910

VGS (V)

Figure 8. R

ID = 1.4 A

vs. Gate−Source Voltage

DS(on)

Figure 10. Normalized R

210

190

170

150

(mW)

130

DS(on)

110

R

90

70

50

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

15

13

11

(A)

9

LIM

I

7

5

3

567891

150°C, VGS = 10 V

100°C, VGS = 10 V

−40°C, VGS = 5 V

−40°C, VGS = 10 V

Figure 9. R

DS(on)

−40°C

25°C

100°C

150°C

100°C, VGS = 5 V

25°C, VGS = 5 V

25°C, VGS = 10 V

ID (A)

vs. Drain Current

VDS = 10 V

VGS (V)

Figure 11. Current Limit vs. Gate−Source

Voltage

14

12

(A)

10

LIM

I

8

6

VDS = 10 V

4

−40 −20 0 20 40 60 80 100 120 140 160

VGS = 10 V

VGS = 5 V

TJ (°C)

Figure 12. Current Limit vs. Junction

Temperature

10

1

(mA)

0.1

DSS

I

0.01

0.001 10 15 20 25 30 35 40

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5

VGS = 0 V

100°C

25°C

150°C

−40°C

VDS (V)

Figure 13. Drain−to−Source Leakage Current

NCV8405

0

TYPICAL PERFORMANCE CURVES

1.2

ID = 150 mA

V

1.1

GS

= V

DS

(V)

1

GS(th)

0.9

0.8

NORMALIZED V

0.7

0.6

−40 −20 0 20 40 60 80 100 120 140

T (°C)

Figure 14. Normalized Threshold Voltage vs.

Temperature

200

ID = 2.5 A

V

= 12 V

DD

R

= 0 W

TIME (ms)

150

100

t

r

t

d(off)

G

50

t

d(on)

0

345678910

f

VGS (V)

Figure 16. Resistive Load Switching Time vs.

Gate−Source Voltage

(V)

SD

V

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

1.1

1

0.9

0.8

−40°C 25°C

100°C

0.7

150°C

0.6

0.5 VGS = 0 V

0.4

1234567891

IS (A)

Figure 15. Body−Diode Forward

Characteristics

1.500 ID = 2.5 A

V

= 12 V

DD

R

= 0 W

G

1.000

−dVDS/d

t(on)

0.500

dVDS/d

t(off)

0.000

345678910

VGS (V)

Figure 17. Resistive Load Switching

Drain−Source Voltage Slope vs. Gate−Source

Voltage

125

ID = 2.5 A

V

= 12 V

75

tf, (VGS = 5 V)

50

25

t

d(on)

DD

, (VGS = 10 V)

t

d(off)

tr, (VGS = 10 V)

, (VGS = 10 V)

tr, (VGS = 5 V)

tf, (VGS = 10 V)

t

, (VGS = 5 V)

d(off)

t

, (VGS = 5 V)

d(on)

100

TIME (ms)

0

0 200 400 600 800 1000 1200 1400 1600 1800 2000

RG (W)

Figure 18. Resistive Load Switching Time vs.

Gate Resistance

1.5

1.3

1.1

0.9

0.7

0.5

0.3

0.1

−0.1

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

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6

dVDS/d

−dVDS/d

, VGS = 5 V

t(off)

t(on)

−dVDS/d

, VGS = 5 V

, VGS = 10 V

t(on)

dVDS/d

, VGS = 10 V

t(off)

ID = 2.5 A

V

= 12 V

DD

0 500 1000 1500 20

RG (W)

Figure 19. Drain−Source Voltage Slope during

Turn On and Turn Off vs. Gate Resistance

NCV8405

TYPICAL PERFORMANCE CURVES

100

50% Duty Cycle

20%

10

1” SQ 1 Oz COPPER

JA

0.1

q

R

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

10%

5%

2%

1

1%

Single Pulse

PULSE WIDTH (sec)

Figure 20. Transient Thermal Resistance

140

120

100

80

60

qJA (°C/W)

40

20

0

0 100 200 300 400 500 600 700

qJA Curve with PCB cu thk 1.0 oz

qJA Curve with PCB cu thk 2.0 oz

COPPER HEAT SPREADER AREA (mm

Figure 21. qJA vs. Copper

TA 25°C

2

)

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7

NCV8405

TEST CIRCUITS AND WAVEFORMS

RL

VIN

RG

Figure 22. Resistive Load Switching Test Circuit

D

DUT

G

S

IDS

VDD

+

−

VIN

IDS

td(ON)

tr

td(OFF)

tf

Figure 23. Resistive Load Switching Waveforms

90%

10%

90%

10%

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8

NCV8405

TEST CIRCUITS AND WAVEFORMS

L

VDS

VIN

RG

tp

D

DUT

G

S

Figure 24. Inductive Load Switching Test Circuit

T

av

T

p

V

(BR)DSS

IDS

VDD

+

−

5 V

0 V

VDS

IDS

I

pk

VDD

V

DS(on)

Figure 25. Inductive Load Switching Waveforms

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9

0

NCV8405

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE M

0.08 (0003)

H

e1

E

A1

D

b1

4

123

e

E

b

q

A

SOLDERING FOOTPRINT*

2.0

0.079

3.8

0.15

L1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130

e 2.20 2.30 2.40 0.087

e1 L1 1.50 1.75 2.00 0.060 H

E

C

q

STYLE 3:

PIN 1. GATE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264 0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

mm

ǒ

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NCV8405/D

10