Datasheet ncv8402d Datasheet

Page 1

NCV8402D

Dual Self-Protected Low-Side Driver with Temperature and Current Limit

NCV8402D is a dual protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.

Features

• Short−Circuit Protection

• Thermal Shutdown with Automatic Restart

• Overvoltage Protection

• Integrated Clamp for Inductive Switching

• ESD Protection

• dV/dt Robustness

• Analog Drive Capability (Logic Level Input)

• AEC−Q101 Qualified

• NCV Prefix for Automotive and Other Applications Requiring Site

and Change Control

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Switch a Variety of Resistive, Inductive and Capacitive Loads

• Can Replace Electromechanical Relays and Discrete Circuits

• Automotive / Industrial

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(BR)DSS

(Clamped)

42 V

*Max current limit value is dependent on input

condition.

Gate Input

ESD Protection

V8402D = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package

Source 1 Drain 1

Gate 1 Drain 1

Source 2 Drain 2

Gate 2 Drain 2

TYP

DS(ON)

165 mW @ 10 V

Overvoltage

Protection

Temperature

Limit

MARKING DIAGRAM

SO−8 CASE 751 STYLE 11

PIN ASSIGNMENT

Current

Limit

ID MAX

2.0 A*

Drain

Current

Sense

Source

V8402D

ALYWX

Octtober, 2009 − Rev. 0

ORDERING INFORMATION

Device Package Shipping

NCV8402DDR2G SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 Publication Order Number:

2500/Tape & Reel

†

NCV8402D/D

Page 2

NCV8402D

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage Internally Clamped V

Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW)

DSS

DGR

Gate−to−Source Voltage V

Continuous Drain Current I

Power Dissipation @ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Thermal Resistance Junction−to−Ambient Steady State (Note 1)

Junction−to−Ambient Steady State (Note 2)

Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, R

G(ext)

= 25 W)

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)

R R

Operating Junction and Storage Temperature TJ, T

q q

JA JA

stg

42 V

"14 V

Internally Limited

0.8

1.62

157

°C/W

150 mJ

87 V

−55 to 150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).

2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).

VGS

−

DRAIN

GATE

SOURCE

Figure 1. Voltage and Current Convention

VDS

−

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Page 3

NCV8402D

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Test Condition Symbol Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

VGS = 0 V, ID = 10 mA, TJ = 25°C

VGS = 0 V, ID = 10 mA, TJ = 150°C

(Note 5)

Zero Gate Voltage Drain Current

VGS = 0 V, VDS = 32 V, TJ = 25°C

VGS = 0 V, VDS = 32 V, TJ = 150°C

(Note 5)

Gate Input Current VDS = 0 V, VGS = 5.0 V I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS = VDS, ID = 150 mA

Gate Threshold Temperature Coefficient V

Static Drain−to−Source On−Resistance

VGS = 10 V, ID = 1.7 A, TJ = 25°C

GS(th)/TJ

VGS = 10 V, ID = 1.7 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 1.7 A, TJ = 25°C

VGS = 5.0 V, ID = 1.7 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 0.5 A, TJ = 25°C

VGS = 5.0 V, ID = 0.5 A, TJ = 150°C

(Note 5)

Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A V

SWITCHING CHARACTERISTICS (Note 5)

Turn−ON Time (10% VIN to 90% ID)

Turn−OFF Time (90% VIN to 10% ID) t

Slew−Rate ON (70% VDS to 50% VDS)

Slew−Rate OFF (50% VDS to 70% VDS) dVDS/dt

VGS = 10 V, VDD = 12 V

ID = 2.5 A, RL = 4.7 W

VGS = 10 V, VDD = 12 V,

RL = 4.7 W

−dVDS/dt

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)

Current Limit

VDS = 10 V, VGS = 5.0 V, TJ = 25°C

VDS = 10 V, VGS = 5.0 V, TJ = 150°C

(Note 5)

VDS = 10 V, VGS = 10 V, TJ = 25°C

VDS = 10 V, VGS = 10 V, TJ = 150°C

(Note 5)

Temperature Limit (Turn−off)

Thermal Hysteresis

Temperature Limit (Turn−off)

Thermal Hysteresis

VGS = 5.0 V (Note 5)

VGS = 5.0 V

VGS = 10 V (Note 5)

VGS = 10 V

GATE INPUT CHARACTERISTICS (Note 5)

Device ON Gate Input Current

VGS = 5 V ID = 1.0 A

VGS = 10 V ID = 1.0 A

Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

Thermal Limit Fault Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Electro−Static Discharge Capability

Human Body Model (HBM)

Machine Model (MM) 400

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Fault conditions are viewed as beyond the normal operating range of the part.

5. Not subject to production testing.

(BR)DSS

DSS

GSSF

GS(th)

DS(on)

OFF

LIM

LIM(off)

LIM(on)

LIM(off)

LIM(on)

GON

GCL

GTL

ESD

42 46 55

40 45 55

1.3 1.8 2.2 V

3.7 4.3 5.0

2.3 3.0 3.7

4.2 4.8 5.4

2.7 3.6 4.5

150 175 200

150 165 185

4000

0.25 4.0

1.1 20

50 100

4.0 6.0 −mV/°C

165 200

305 400

195 230

360 460

190 230

350 460

1.0 V

120

0.8

V/ms

0.3

°C

400

0.05

0.4

0.15

0.7

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Page 4

NCV8402D

TYPICAL PERFORMANCE CURVES

(A)

= 25°C

Jstart

= 150°C

L (mH)

L(max)

10 100

Figure 2. Single Pulse Maximum Switch−off

Current vs. Load Inductance

= 25°C

Jstart

(A)

L(max)

Jstart

= 150°C

1000

(mJ)

100

max

10 10

Jstart

= 25°C

= 150°C

L (mH)

Figure 3. Single Pulse Maximum Switching

Energy vs. Load Inductance

1000

= 25°C

Jstart

(mJ)

100

max

Jstart

= 150°C

0.1 110

TIME IN CLAMP (ms)

Figure 4. Single Pulse Maximum Inductive

Switch−off Current vs. Time in Clamp

TA = 25°C

8 V

10 V

6 V

(A)

5 V

4 V

3.5 V

3 V

VGS = 2.5 V

012345

VDS (V)

Figure 6. On−state Output Characteristics

110

TIME IN CLAMP (ms)

Figure 5. Single Pulse Maximum Inductive

Switching Energy vs. Time in Clamp

VDS = 10 V

(A)

12345

VGS (V)

Figure 7. Transfer Characteristics

−40°C

25°C

100°C

150°C

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Page 5

NCV8402D

TYPICAL PERFORMANCE CURVES

400

300

(mW)

200

DS(on)

100

45678910

1.75

1.5

1.25

(NORMALIZED)

DS(on)

0.75

0.5

−40 −20 0 20 40 60 80 100 120 140

150°C, ID = 0.5 A

150°C, ID = 1.7 A

100°C, ID = 0.5 A

25°C, ID = 1.7 A

−40°C, ID = 1.7 A

VGS (V)

Figure 8. R

ID = 1.7 A

vs. Gate−Source Voltage

DS(on)

T (°C)

Figure 10. Normalized R

100°C, ID = 1.7 A

25°C, ID = 0.5 A

−40°C, ID = 0.5 A

VGS = 5 V

VGS = 10 V

vs. Temperature

DS(on)

350

150°C, VGS = 5 V

300

150°C, VGS = 10 V

250

(mW)

DS(on)

(A)

LIM

200

150

100

100°C, VGS = 5 V

25°C, VGS = 5 V

−40°C, VGS = 5 V

−40°C, VGS = 10 V

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Figure 9. R

5678 910

DS(on)

−40°C

25°C

100°C

150°C

100°C, VGS = 10 V

25°C, VGS = 10 V

ID (A)

vs. Drain Current

VDS = 10 V

VGS (V)

Figure 11. Current Limit vs. Gate−Source

Voltage

(A)

LIM

VDS = 10 V

−40 −20 0 20 40 60 80 100 120 140

VGS = 10 V

VGS = 5 V

TJ (°C)

Figure 12. Current Limit vs. Junction

Temperature

0.1

(mA)

DSS

0.01

0.001

0.0001 10 15 20 25 30 35 40

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VGS = 0 V

150°C

100°C

25°C

−40°C

VDS (V)

Figure 13. Drain−to−Source Leakage Current

Page 6

NCV8402D

TYPICAL PERFORMANCE CURVES

1.2

ID = 150 mA

= V

1.1

(V)

GS(th)

0.9

0.8

NORMALIZED V

0.7

0.6

−40 −20 0 20 40 60 80 100 120 140

T (°C)

Figure 14. Normalized Threshold Voltage vs.

Temperature

200

150

100

TIME (ms)

345678910

d(on)

d(off)

VGS (V)

ID = 2.5 A

VDD = 12 V

RG = 0 W

Figure 16. Resistive Load Switching Time vs.

Gate−Source Voltage

1.1

(V)

0.9

0.8

−40°C

25°C

100°C

0.7 150°C

0.6

VGS = 0 V

0.5

12345678910

IS (A)

Figure 15. Source−Drain Diode Forward

Characteristics

ID = 2.5 A

VDD = 12 V

0.8

RG = 0 W

0.6

0.4

−dVDS/d

t(on)

dVDS/d

t(off)

0.2

345678910

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

VGS (V)

Figure 17. Resistive Load Switching

Drain−Source Voltage Slope vs. Gate−Source

Voltage

100

ID = 2.5 A

VDD = 12 V

, (VGS = 10 V)

tr, (VGS = 5 V)

TIME (ms)

tf, (VGS = 10 V) tf, (VGS = 5 V)

, (VGS = 5 V)

d(off)

, (VGS = 5 V)

d(on)

d(off)

tr, (VGS = 10 V)

, (VGS = 10 V)

d(on)

0 400 800 1200 1600 2000

RG (W)

Figure 18. Resistive Load Switching Time vs.

Gate Resistance

0.8

0.6

0.4

0.2

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

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dVDS/d

−dVDS/d

, VGS = 5 V

t(off)

t(on)

−dVDS/d

, VGS = 5 V

, VGS = 10 V

t(on)

dVDS/d

, VGS = 10 V

t(off)

ID = 2.5 A

VDD = 12 V

0 500 1000 1500 2000

RG (W)

Figure 19. Drain−Source Voltage Slope during

Turn On and Turn Off vs. Gate Resistance

Page 7

1000

100

R(t) (°C/W)

0.1

NCV8402D

TYPICAL PERFORMANCE CURVES

Duty Cycle = 50%

20% 10%

5% 2%

0.01

0.0000001

Single Pulse

0.010.0010.00010.000010.000001

PULSE WIDTH (sec)

0.1 1 10 100 1000

Figure 20. Transient Thermal Resistance

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Page 8

NCV8402D

TEST CIRCUITS AND WAVEFORMS

VIN

Figure 21. Resistive Load Switching Test Circuit

DUT

IDS

VDD

−

VIN

IDS

td(ON)

td(OFF)

Figure 22. Resistive Load Switching Waveforms

90%

10%

90%

10%

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Page 9

NCV8402D

TEST CIRCUITS AND WAVEFORMS

VDS

VIN

DUT

Figure 23. Inductive Load Switching Test Circuit

(BR)DSS

IDS

VDD

−

5 V

0 V

VDS

IDS

VDD

DS(on)

Figure 24. Inductive Load Switching Waveforms

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Page 10

−Y−

−Z−

NCV8402D

PACKAGE DIMENSIONS

SOIC−8

CASE 751−07

ISSUE AJ

NOTES:

−X− A

0.25 (0.010)

SEATING PLANE

0.10 (0.004)

0.25 (0.010) Z

SXS

X 45

SOLDERING FOOTPRINT*

1.52

0.060

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NCV8402D/D