Datasheet ncv8401 Datasheet

NCV8401

Self-Protected Low Side Driver with Temperature and Current Limit

NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.

Features

• Short Circuit Protection

• Thermal Shutdown with Automatic Restart

• Over Voltage Protection

• Integrated Clamp for Inductive Switching

• ESD Protection

• dV/dt Robustness

• Analog Drive Capability (Logic Level Input)

• RoHs Compliant

• AEC-Q101 Qualified

• NCV Prefix for Automotive and Other Applications Requiring Site

and Change Control

• This is a Pb−Free Device

http://onsemi.com

V

DSS

(Clamped)

42 V

*Max current may be limited below this value

depending on input conditions.

Gate Input

ESD Protection

R

DS(ON)

23 mW @ 10 V

Overvoltage

Protection

Temperature

Limit

TYP

Current

Limit

MAX

I

D

(Limited)

33 A*

Drain

Current

Sense

Typical Applications

• Switch a Variety of Resistive, Inductive and Capacitive Loads

• Can Replace Electromechanical Relays and Discrete Circuits

• Automotive / Industrial

Source

MARKING DIAGRAM

DPAK

CASE 369C

STYLE 2

Y = Year WW = Work Week xxx = Device Code G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

NCV8401DTRKG DPAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1

3

YWW

xxx

2

xxxxxG

1 = Gate 2 = Drain 3 = Source

2500/Tape & Reel

†

June, 2011 − Rev. 8

1 Publication Order Number:

NCV8401/D

NCV8401

MAXIMUM RATINGS (T

Drain−to−Source Voltage Internally Clamped V

Drain−to−Gate Voltage Internally Clamped

= 1.0 MW)

(R

GS

Gate−to−Source Voltage V

Drain Current − Continuous I

Total Power Dissipation

Thermal Resistance, Junction−to−Case

Single Pulse Drain−to−Source Avalanche Energy (V

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms)

Operating Junction Temperature T

Storage Temperature T

@ T

= 25°C (Note 1)

A

@ TA = 25°C (Note 2)

= 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, T

DD

= 25°C unless otherwise noted)

J

Rating

Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2)

= 150°C) (Note 3)

Jstart

Symbol Value Unit

42 V

"14 V

Internally Limited

W

1.1

V

DSS

DGR

GS

D

P

D

2.0

R

q

JC

R

q

JA

R

q

JA

E

AS

V

LD

J

stg

1.6 110

60

800 mJ

65 V

−40 to 150 °C

−55 to 150 °C

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Minimum FR4 PCB, steady state.

2. Mounted onto a 2″ square FR4 board

(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).

3. Not subject to production testing.

+

VGS

−

I

D

DRAIN

I

G

GATE

SOURCE

Figure 1. Voltage and Current Convention

+

VDS

−

http://onsemi.com

2

NCV8401

MOSFET ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

J

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Clamped Breakdown Voltage

(V

= 0 Vdc, ID = 250 mAdc)

GS

= 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)

(V

GS

V

Zero Gate Voltage Drain Current

(V

= 32 Vdc, VGS = 0 Vdc)

DS

(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)

Gate Input Current

(V

= 5.0 Vdc, VDS = 0 Vdc)

GS

ON CHARACTERISTICS

Gate Threshold Voltage

(V

= VGS, ID = 1.2 mAdc)

DS

Threshold Temperature Coefficient

Static Drain−to−Source On−Resistance (Note 5)

(V

= 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)

GS

(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)

Static Drain−to−Source On−Resistance (Note 5)

(V

= 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)

GS

(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)

V

R

Source−Drain Forward On Voltage

(I

= 5 A, VGS = 0 V)

S

SWITCHING CHARACTERISTICS (Note 4)

Turn−ON Time (10% V

Turn−OFF Time (90% VIN to 10% ID) t

Turn−ON Time (10% VIN to 90% ID)

Turn−OFF Time (90% VIN to 10% ID) t

Slew−Rate ON (20% VDS to 50% VDS)

Slew−Rate OFF (80% VDS to 50% VDS) dVDS/dt

to 90% ID)

IN

VIN = 0 V to 5 V, VDD = 25 V

= 1.0 A, Ext RG = 2.5 W

I

D

VIN = 0 V to 10 V, VDD = 25 V

ID = 1.0 A, Ext RG = 2.5 W

Vin = 0 to 10 V, VDD = 12 V,

= 4.7 W

R

L

,

−dVDS/dt

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Current Limit

VGS = 5.0 V, VDS = 10 V

V

= 5.0 V, TJ = 150°C (Note 4)

GS

VGS = 10 V, VDS = 10 V

VGS = 10 V, TJ = 150°C (Note 4)

Temperature Limit (Turn−off) VGS = 5.0 V (Note 4) T

Thermal Hysteresis VGS = 5.0 V

DT

Temperature Limit (Turn−off) VGS = 10 V (Note 4) T

Thermal Hysteresis VGS = 10 V

DT

GATE INPUT CHARACTERISTICS (Note 4)

Device ON Gate Input Current

VGS = 5 V ID = 1.0 A

VGS = 10 V ID = 1.0 A

Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

Thermal Limit Fault Gate Input Current

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)

Electro−Static Discharge Capability

Human Body Model (HBM) Machine Model (MM)

4. Not subject to production testing.

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

(BR)DSS

I

DSS

I

GSSF

GS(th)

DS(on)

V

SD

t

ON

OFF

t

ON

OFF

I

LIM

LIM(off)

LIM(on)

LIM(off)

LIM(on)

I

GON

I

GCL

I

GTL

ESD

42 42

46 44

1.5

6.5

50 100

1.0 1.8

5.0

23 43

28 50

0.80 1.1 V

41 50

129 150

16 25

164 180

ON

1.27

0.36

25 11

30 18

30 16

35 25

150 175 200 °C

15 °C

150 165 185 °C

15 °C

50

400

0.1

0.7

0.6

2.0

4000

400

50

Vdc

50

mAdc

5.0

mAdc

2.0 Vdc

−mV/°C

mW

29 55

mW

34 60

ms

V/ms

35

Adc

21

40 28

mA

V

http://onsemi.com

3

NCV8401

TYPICAL PERFORMANCE CURVES

100

(A)

L(max)

I

100

(A)

L(max)

I

T

= 25°C

Jstart

10

T

= 150°C

Jstart

1

L (mH) L (mH)

Figure 2. Single Pulse Maximum Switch−off

Current vs. Load Inductance

T

= 25°C

Jstart

10

T

= 150°C

Jstart

10,000

T

= 25°C

T

Jstart

= 150°C

(mJ)

1,000

max

E

100

10010

Figure 3. Single Pulse Maximum Switching

Energy vs. Load Inductance

10,000

T

= 25°C

T

Jstart

= 150°C

(mJ)

1,000

max

E

(A)

D

I

1

Time in Clamp (ms) Time in Clamp (ms)

Figure 4. Single Pulse Maximum Inductive

Switch−off Current vs. Time in Clamp

45

40

35

30

25

20

15

10

5

0

6 V 7 V 8 V 9 V

(V) VGS (V)

V

DS

Figure 6. On−state Output Characteristics

at 255C

10 V

VGS = 2.5 V

5 V 4 V

3 V

101

1001

Figure 5. Single Pulse Maximum Inductive

Switching Energy vs. Time in Clamp

100

30

−40°C

25

25°C

20

(A)

D

I

15

10

100°C

150°C

5

0

543210

4.03.53.02.52.01.51.0

Figure 7. Transfer Characteristics (VDS = 10 V)

http://onsemi.com

4

NCV8401

0

TYPICAL PERFORMANCE CURVES

80

70

150°C

60

50

(mW)

40

DS(on)

R

30

20

−40°C

10

345678910

2.00

1.75

1.50

DS(on)

1.25

1.00

NORMALIZED R

0.75

100°C

25°C

Figure 8. R

VGS (V) ID (A)

vs. Gate−Source Voltage Figure 9. R

DS(on)

VGS = 5 V

VGS = 10 V

ID = 3 A

45

150°C, VGS = 5 V

40

150°C, VGS = 10 V

35

30

(mW)

25

DS(on)

R

(A)

LIM

I

25°C, VGS = 5 V

20

25°C, VGS = 10 V

15

−40°C, VGS = 5 V

10

13579

45

40

35

30

25

20

−40°C

25°C

100°C

100°C, VGS = 5 V

100°C, VGS = 10 V

−40°C, VGS = 10 V

vs. Drain Current

DS(on)

150°C

0.50

Figure 10. Normalized R

45

40

VGS = 10 V

35

(A)

30

LIM

I

25

20

15

−40 −20 0 20 40 60 80 100 120 140

VGS = 5 V

60

T (°C) VGS (V)

vs. Temperature

DS(on)

(I

= 5 A)

D

TJ (°C) VDS (V)

Figure 12. Current Limit vs. Junction

Temperature (V

= 10 V)

DS

140

1201008040200−20−40

15

567891

Figure 11. Current Limit vs. Gate−Source

Voltage (VDS = 10 V)

100

10

150°C

(mA)

0.1

DSS

I

0.01

0.001

0.0001

1

100°C

25°C

−40°C

40353025201510

Figure 13. Drain−to−Source Leakage Current

(VGS = 0 V)

http://onsemi.com

5

NCV8401

TYPICAL PERFORMANCE CURVES

1.2

1.1

(V)

1.0

GS(th)

0.9

0.8

NORMALIZED V

0.7

0.6

Figure 14. Normalized Threshold Voltage vs.

Temperature (I

200

150

100

TIME (ms)

50

1.0

0.9

−40°C

0.8 25°C

(V)

0.7

V

SD

100°C

0.6

150°C

0.5

0.4

80 120 910

1401006040200−20−40

T (°C) IS (A)

Figure 15. Source−Drain Diode Forward

= 1.2 mA, VDS = VGS)

D

t

d(off)

2.0

1.5

1.0

t

f

0.5

Characteristics (VGS = 0 V)

−dVDS/d

dVDS/d

87654321

t(on)

t(off)

t

d(on)

0

VGS (V) VGS (V)

Figure 16. Resistive Load Switching Time vs.

Gate−Source Voltage

(V

= 25 V, ID = 5 A, RG = 0 W)

DD

125

100

75

TIME (ms)

50

t

25

, VGS = 5 V

d(on)

t

, VGS = 10 V

d(on)

0

RG (W)R

Figure 18. Resistive Load Switching Time vs.

Gate Resistance (V

= 25 V, ID = 5 A)

DD

t

, VGS = 10 V

d(off)

t

, VGS = 5 V

d(off)

tf, VGS = 10 V

tf, VGS = 5 V

tr, VGS = 5 V

tr, VGS = 10 V

t

r

0

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

109876543

Figure 17. Resistive Load Switching

Drain−Source Voltage Slope vs. Gate−Source

Voltage (V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4 dVDS/d

0.2

0

DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

2000150010005000

t(off)

= 25 V, ID = 5 A, RG = 0 W)

DD

−dVDS/d

, VGS = 5 V

G

dVDS/d

(W)

, VGS = 10 V

t(on)

, VGS = 5 V

t(on)

, VGS = 10 V

t(off)

2000150010005000

Figure 19. Drain−Source Voltage Slope during

Turn On and Turn Off vs. Gate Resistance

(V

= 25 V, ID = 5 A)

DD

http://onsemi.com

6

250

225

200

175

150

(°C/W)

125

JA

q

R

100

75

50

25

0 100 200

NCV8401

TYPICAL PERFORMANCE CURVES

PCB Cu thickness, 1.0 oz

PCB Cu thickness, 2.0 oz

300 400 500 600 700 800

COPPER HEAT SPREADER AREA (mm2)

Figure 20. R

100

50% Duty Cycle

20%

10

10%

5%

1

2%

C°/W, 2 oz. Copper

2

788 mm

JA

q

R

0.001

1%

0.1

0.01 Single Pulse

Psi Tab−A

1E−06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

PULSE WIDTH (sec)

vs. Copper Area

q

JA

Figure 21. Transient Thermal Resistance

http://onsemi.com

7

NCV8401

TEST CIRCUITS AND WAVEFORMS

RL

VIN

RG

Figure 22. Resistive Load Switching Test Circuit

D

DUT

G

S

IDS

VDD

+

−

VIN

IDS

td(ON)

tr

td(OFF)

Figure 23. Resistive Load Switching Waveforms

90%

10%

tf

90%

10%

http://onsemi.com

8

NCV8401

TEST CIRCUITS AND WAVEFORMS

L

VDS

VIN

RG

tp

D

DUT

G

S

Figure 24. Inductive Load Switching Test Circuit

T

av

T

p

V

(BR)DSS

IDS

VDD

+

−

5 V

0 V

VDS

IDS

I

pk

VDD

V

DS(on)

Figure 25. Inductive Load Switching Waveforms

http://onsemi.com

9

0

NCV8401

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE O

SEATING

−T−

PLANE

B

V

S

R

4

A

123

K

F

L

D

2 PL

G

0.13 (0.005) T

C

E

Z

U

J

H

M

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

6.20

0.244

3.0

0.118

2.58

0.101

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

10

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

NCV8401/D