2/3/4-Phase Controller with
On Board Gate Drivers for
CPU Applications
The NCP5395 provides up to a four−phase buck solution which
combines differential voltage sensing, differential phase current
sensing, adaptive voltage positioning, and on board gate drivers.
Dual−edge pulse−width modulation (PWM) combined with inductor
current sensing reduces system cost by providing the fastest initial
response to dynamic load events. Dual−edge multiphase modulation
reduces the total bulk and ceramic output capacitance required to meet
transient regulation specifications.
The on board gate drivers includes adaptive non overlap and power
saving operation. A high performance operational error amplifier is
provided to simplify compensation of the system. Patented Dynamic
Reference Injection further simplifies loop compensation by
eliminating the need to compromise between closed−loop transient
response and Dynamic VID performance.
Features
• Meets Intel’s VR11.1 Specifications
• Meets AMD 6 Bit Code Specifications
• Dual−edge PWM for Fastest Initial Response to Transient Loading
• True Differential Remote Voltage Sensing Amplifier
• Phase−to−Phase Current Balancing
• “Lossless” Differential Inductor Current Sensing
• Differential Current Sense Amplifiers for Each Phase
• Adaptive Voltage Positioning (AVP)
• Oscillator Frequency Range of 125 kHz − 1 MHz
• Latched Over Voltage Protection (OVP)
• Guaranteed Startup into Pre−Charged Loads
• Threshold Sensitive Enable Pin for VTT Sensing
• Power Good Output with Internal Delays
• Thermally Compensated Current Monitoring
• Thermal Shutdown Protection
• Adaptive−Non−Overlap Gate Drive Circuit
• Output Disable Control Turn Off of Both Phase Pair MOSFETs
• This is a Pb−Free Device
Applications
• Desktop Processors
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
148
QFN48
CASE 485K
PLASTIC
MARKING DIAGRAM
48
1
NCP5395
AWLYYWWG
A= Assembly Location
WL= Wafer Lot
YY= Year
WW= Work Week
G= Pb−Free Package
BST1
TG1
SWN1
VCCP
BG2
SWN2
TG2
BST2
DRVON
SWN3
TG3
VBST3
48
1
BG3
PSI
VID0
VID1
VID2
VID3
VID4
VID5
VID6
VID7/AMD
ROSC
ILIM
ORDERING INFORMATION
DevicePackageShipping
NCP5395MNR2GQFN48
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
10VID7/AMDVoltage ID DAC input. Pull to VCC (5 V) to enable AMD 6−bit DAC code.
11ROSCA resistance from this pin to ground programs the oscillator frequency and provides a 2 V reference
12ILIMOver current shutdown threshold setting. ILIM = VDRP − 1.3 V. Resistor divide ROSC to set threshold
13IMON0 to 1 Volt analog signal proportional to the output load current. VSN referenced Clamped to 1.1 Vmax
14VSPNon−inverting input to the internal differential remote sense amplifier
15VSNInverting input to the internal differential remote sense amplifier
16DIFFOUTOutput of the differential remote sense amplifier
17COMPOutput of the compensation amplifier
18VFBCompensation amplifier voltage feedback
19VDRPVoltage output signal proportional to current used for current limit and output voltage droop
20VDFBDroop Amplifier Voltage Feedback
21CSSUMInverted Sum of the Differential Current Sense inputs
22DACDAC output used to provide feed forward for dynamic VID
23GNDGround
24VCCPower for the internal control circuits with UVLO monitor
25CS4PNon−inverting input to current sense amplifier #4
26CS4NInverting input to current sense amplifier #4
27CS3PNon−inverting input to current sense amplifier #3
28CS3NInverting input to current sense amplifier #3
29CS2PNon−inverting input to current sense amplifier #2
30CS2NInverting input to current sense amplifier #2
31CS1PNon−inverting input to current sense amplifier #1
32CS1NInverting input to current sense amplifier #1
33ENThreshold sensitive input. High = startup, Low =shutdown.
34VR_RDYOpen collector output. High indicates that the output is regulating
35G4PWM output pulse to gate driver.
36BG1Low side gate drive #1
37BST1Upper MOSFET floating bootstrap supply for driver#1
38TG1High side gate drive #1
39SWN1Switch Node #1
40VCCPPower VCC for gate drivers with UVLO monitor
41BG2Low side gate drive #2
42SWN2Switch Node #2
43TG2High side gate drive #2
44BST2Upper MOSFET floating bootstrap supply for driver#2
45DRVONBidirectional Gate Drive Enable
46SWN3Switch Node #3
47TG3High side gate drive #3
48BST3Upper MOSFET floating bootstrap supply for driver#3
FLAGGNDPower supply return (QFN Flag)
for programming the ILIM voltage.
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NCP5395
ABSOLUTE MAXIMUM RATINGS
RatingSymbolValueUnit
ELECTRICAL INFORMATION
Controller Power Supply Voltages to GND
Driver Power Supply Voltages to GNDV
High−Side Gate Driver Supplies: BSTx to SWNxV
High−Side FET Gate Driver Voltages: TGx to SWNxVTG − V
Switch Node: SWNxV
Low−Side Gate Drive: BGxVBG − AGNDVCC + 0.3 V
Logic InputsV
GNDV
V−GND ±300mV
Imon OutV
All Other Pins−0.3, 5.5V
THERMAL INFORMATION
Thermal Characteristic
QFN Package (Note 1)
Operating Junction Temperature Range (Note 2)T
Operating Ambient Temperature RangeT
Maximum Storage Temperature RangeT
Moisture Sensitivity Level
QFN Package
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*All signals referenced to GND unless noted otherwise.
*The maximum package power dissipation must be observed.
1. JESD 51−5 (1S2P Direct−Attach Method) with 0 LFM
2. Operation at −40°C to 0°C guaranteed by design, not production tested.
V
CC
CCP
− V
BST
SWN
40 V ≤ 50 ns wrt/GND
−0.3, 15 wrt/SWN
SWN
35 V ≤ 50 ns wrt/GND
−0.3, 15 wrt/SWN
SWN
40 V ≤ 50 ns wrt/GND
−10 V (200 ns)
−0.3 VDC (200 ns)
LOGIC
GND
IMON
R
q
JA
J
AMB
STG
MSL1
−0.3, 7V
−0.3, 15V
35 V wrt/GND
BOOT + 0.3 V
−2 V (200 ns)
35
−5 VDC
−0.3, 6V
0V
1.1V
TBD°C/W
0 to 125°C
0 to +70°C
−55 to +150°C
V
V
V
V
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterTest ConditionsMinTypMaxUnit
ERROR AMPLIFIER
Input Bias Current−200−200nA
Open Loop DC GainCL = 60 pF to GND,
RL = 10 kW to GND
Open Loop Unity Gain BandwidthCL = 60 pF to GND,
RL = 10 kW to GND
Open Loop Phase MarginCL = 60 pF to GND,
RL = 10 kW to GND
Slew Rate
DVin = 100 mV, G = −10V/V,
DV
= 1.5 V − 2.5 V,
out
CL = 60 pF to GND,
DC Load = ±125 mA to GND
Maximum Output Voltage10 mV of Overdrive,
I
= 2.0 mA
SOURCE
Minimum Output Voltage10 mV of Overdrive,
I
= 500 mA
SINK
Output Source Current10 mV of Overdrive,
V
= 3.5 V
out
Output Sink Current10 mV of Overdrive,
V
= 0.1 V
out
DIFFERENTIAL SUMMING AMPLIFIER
V+ Input Pull down ResistanceDRVON = low
DRVON = high
V+ Input Bias VoltageDRVON = low
DRVON = high
Input Voltage Range (Note 4)−0.3−3.0V
−3 dB BandwidthCL = 80 pF to GND,
RL = 10 kW to GND
Closed Loop DC gain VS to Diffout (Note 4)VS+ to VS− = 0.5 V to 1.6 V0.981.01.02V/V
Maximum Output Voltage10 mV of Overdrive,
I
= 2 mA
SOURCE
Minimum Output Voltage10 mV of Overdrive,
I
= 1 mA
SINK
Output Source Current10 mV of Overdrive,
V
= 3 V
out
Output Sink Current10 mV of Overdrive,
V
= 0.2 V
out
INTERNAL OFFSET VOLTAGE
Offset Voltage to the (+) Pin of the Error Amp & the
VDRP Pin
3. Design guaranteed.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
−100−dB
−18−MHz
−70−°
−10−
3.0−−V
−−75mV
1.52.0−mA
0.751.0−mA
−
−
−
−
−15−MHz
3.0−−V
−−0.5V
1.52.0−mA
1.01.5−mA
−20+2mV
0.6
6.0
0.5
0.86
V/ms
−
kW
−
−
−
V
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
VDROOP AMPLIFIER
Input Bias Current−200−200nA
Inverting Voltage Range01.33.0V
Open Loop DC GainCL = 20 pF to GND including ESD
RL = 1 kW to GND
Open Loop Unity Gain BandwidthCL = 20 pF to GND including ESD
RL = 1 kW to GND
Open Loop Phase MarginCL = 20 pF to GND including ESD
RL = 1 kW to GND
Slew RateCL = 20 pF to GND including ESD
RL = 1 kW to GND
Maximum Output Voltage10 mV of Overdrive,
I
= 4.0 mA
SOURCE
Minimum Output Voltage10 mV of Overdrive,
I
= 1.0 mA
SINK
Output Source Current10 mV of Overdrive,
V
= 3.0 V
out
Output Sink Current10 mV of Overdrive,
V
= 1.0 V
out
CSSUM AMPLIFIER
Current Sense Input to CSSUM Gain−75 mV < CS < 75 mV−3.793−3.70−3.608V/V
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
> 1.75 V1.892.02.02V/V
−4.0−MHz
−TBD−
= 0 mA−TBD−TBDmV
SOURCE
SINK
= 25 mA
−−0.1V
V/ms
1.0−−V
DRP
= HIGH
1.1−1.15V
TBD150TBDmV
−1.15−V
mA
kHz
kHz
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
VR_RDY (Power Good) OUTPUT
VR_RDY Rise Time
VR_RDY Output Voltage at Power−up
External pull−up of 1 KW to 1.25 V,
C
= 45 pF, DVo = 10% to 90%
TOT
VR_RDY pulled up to 5 V via 2 kW,
t
≤3 x t
R(VCC)
100 ms ≤ t
R(VCC)
VR_RDY High − Output Leakage CurrentVR_RDY = 5.5 V via 1 K−−0.1
VR_RDY Upper Threshold Voltage (INTEL)VCore Increasing, DAC = 1.3 V−300250mV
VR_RDY Lower Threshold Voltage (INTEL)VCore Decreasing, DAC = 1.3 V390350300mV
VR_RDY Lower Threshold Voltage (AMD)VCore Increasing, DAC = 1.3 V−TBDTBDmV
VR_RDY Lower Threshold Voltage (AMD)VCore Decreasing, DAC = 1.3 VTBDTBDTBDmV
VR_RDY Rising DelayVCore Increasing−TBD−
VR_RDY Falling DelayVCore Decreasing−5.0−
PWM G4 OUTPUT
Output High Voltage
Sourcing 500 mA
Mid Output Voltage1.41.51.6
Output Low Voltage
Sinking 500 mA
Delay + Rise TimeCL (PCB) = 50 pF,
DVo = VCC to GND
Delay + Fall TimeCL (PCB) = 50 pF,
DVo = GND to V
Tri−State Output LeakageGx = 2.5 V, x = 1−4−−1.5
Output Impedance −
HI or LO State
Max Resistance to VCC (HI) or
GND (LO)
Minimum VCC for Valid PWM Output Level−−2.0V
PWM 4 2/3/4 Phase Detection
2 Phase ModeNote Gate 4 tied to V
4 Phase ModeNote Gate Driver will pull to 1.5 V1.2−2.8V
3 Phase ModeNote Gate 4 tied to GND0−0.8V
DIGITAL SOFT−START
Soft−Start Ramp TimeDAC = 0 to DAC = 1.1 V1.0−1.3ms
VR11 V
timeNot used in Legacy Startup400500600
boot
VID7/VR11/AMD/LEGACY INPUT
VID Threshold450600770mV
VR11 Input Bias Current−100−100nA
3. Design guaranteed.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
R(5V)
≤ 20 ms
CC
CC
−100150ns
−−1.0V
mA
(below
DAC)
(below
DAC)
(below
DAC)
(below
DAC)
3.0−−V
−−0.7V
−1015ns
−1015ns
mA
−75150
3.2−V
CC
ms
ms
ms
W
V
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
VID7/VR11/AMD/LEGACY INPUT
Delay Before Latching VID Change (VID Deskewing)Measured from the Edge of the 1st
VID Change
AMD Upper ThresholdNote: When above this threshold
the controller will ramp directly to
VID without stopping at V
AMD Lower Threshold2.4−−V
ENABLE INPUT
Enable High Input Leakage CurrentPull−up to 1.3 V−−200nA
VR11.1 Threshold450600770mV
AMD Upper Threshold−1.31.5V
AMD Lower Threshold0.91.1−V
AMD Total HysteresisRising− Falling Threshold−200−mV
Enable Delay TimeMeasure time from Enable
transitioning HI to when SS begins
CURRENT LIMIT
ILIM to VDRP Gain0.991.001.01V/V
ILIM to VRDP Gain in PSI 4 Phase−0.25−V/V
ILIM to VDRP Gain in PSI 3 Phase−0.333−V/V
ILIM to VDRP Gain in PSI 2 Phase−0.5−V/V
ILIM Pin Input Bias Current−0.11.0
ILIM Pin Working Voltage Range0.1−2.0V
ILIM accuracyMeasured with respect to the ILIM
setting
Delay−−120ns
OVERVOLTAGE PROTECTION
VR11 Over Voltage ThresholdDAC+
AMD Over Voltage ThresholdDAC+
Delay−−100ns
UNDERVOLTAGE PROTECTION
VCC UVLO Start Threshold4.04.254.5V
VCC UVLO Stop Threshold3.84.054.3V
VCC UVLO Hysteresis−200−mV
DAC OUTPUT
DAC Output Variation
DAC Output Variation
Output Source CurrentV
Output Sink CurrentV
I
= 200 mA, All VIDs
SOURCE
I
= 200 mA, All VIDs
SINK
= 1.6 V0−5.0mA
out
= 0.3 V5.0−16mA
out
3. Design guaranteed.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
200−300ns
−−2.9V
boot
−3.5−ms
−10−10mV
160
210
−3.003.0%
−3.003.0%
DAC+
190
DAC+
235
DAC+
210
DAC+
260
mA
mV
mV
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
VID INPUTS
Threshold450600770mV
VR11 Mode Leakage−100−100nA
AMD Mode Input Bias Current10−25
Delay before Latching VID Change
(VID Deskewing)
Delay Before Responding to Invalid or Shutdown
Codes (Remove Spec)
Measured from the edge of the 1
VID change
Note: DAC must hold the last valid
VID during this period
DIGITAL DAC SLEW RATE LIMITER
Slew Rate Limit (Intel Mode)12.5−15
Slew Rate Limit (AMD Mode)3.125−3.75
Soft−Start Slew Rate−0.84−
INPUT SUPPLY CURRENT
VCC Operating CurrentEN Low, No PWM20−40mA
PHASE SHEDDING
CS referred ph shed biasCS2 through CS4−66−mV
V
SUPPLY VOLTAGE
CCP
V
UVLO Start Threshold8.29.09.5V
CCP
V
UVLO Stop Threshold7.28.08.5V
CCP
V
UVLO Hysteresis−1.0−V
CCP
V
PORVoltage at which the Driver OVP
CCP
becomes active
BOOST PIN UVLO
BOOST VCC UVLO Start Threshold3.54.0V
BOOST VCC UVLO Stop Threshold3.33.8V
BOOST VCC UVLO Hysteresis200mV
BOOST SUPPLY CURRENT
I
VCCP_NORM
Operation
I
VCC_SBC
I
BST1
I
BST2
I
BST3
I
BST1_SD
I
BST2_SD
I
BST3_SD
Quiescent Supply Current in Normal
EN = VCC, PWM = OSC, F
LOAD
100k, C
Standby CurrentEN = GND; No switching,
V
= 12 V
CCP
Quiescent Supply Current in Normal OperationIN = V
Quiescent Supply Current in Normal OperationIN = GND, V
Quiescent Supply Current in Normal OperationIN = GND, V
Standby CurrentIN = V
Standby CurrentIN = GND, V
Standby CurrentIN = GND, V
CCP
CCP
, V
, V
CCP
CCP
CCP
CCP
CCP
CCP
STARTUP HIGH SIDE SHORT TRIP (Active only during 1st power on)
V
Output Overvoltage Trip Threshold at StartupPower Startup time, VCC > 9 V1.75−2.0V
swx
3. Design guaranteed.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
st
200−300ns
−−−
TBD3.2TBD
= 0 p, V
CCP
SW
= 12 V
=
−−42mA
20−40mA
= 12 V−10TBDmA
= 12 V−10TBDmA
= 12 V−10TBD
= 12 V−0.25−mA
= 12 V−0.25−mA
= 12 V−0.25−mA
mA
ms
mV/ms
mV/ms
mV/ms
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NCP5395
ELECTRICAL CHARACTERISTICS
0°C < TA < 70°C; 0°C < TJ < 125°C; 4.75 < VCC < 5.25 V; All DAC Codes; C
ParameterUnitMaxTypMinTest Conditions
HIGH SIDE DRIVER
R
Output Resistance, SourcingV
H_TG
R
Output Resistance, SinkingV
H_TG
Tr
Transition TimeC
DRVH
Tf
Transition TimeC
DRVH
Tpdh
Tpdh
Propagation Delay (Note 4)Driving High, C
DRVH
Propagation Delay (Note 4)Driving Low, C
DRVH
V
V
BST
BST
LOAD
LOAD
CCP
CCP
− V
= 12 V−1.84.2
SW
− V
= 12 V−1.02.2
SW
= 3 nF, V
= 3 nF, V
= 12 V
= 12 V
LOW SIDE DRIVER
R
Output Resistance, SourcingSW = GND−TBD4.2
H_BG
R
Output Resistance, SinkingSW = V
L_BG
Tr
Transition TimeC
DRVH
Tf
Transition TimeC
DRVH
Tpdh
Tpdh
V
NCDT
Propagation Delay (Note 4)Driving High, C
DRVH
Propagation Delay (Note 4)Driving Low, C
DRVH
Negative Current Detector Threshold(Note 3)−−1.0−mV
CC
= 3 nF−16−ns
LOAD
= 3 nF−11−ns
LOAD
V
= 12 V
CCP
V
= 12 V
CCP
THERMAL SHUTDOWN
Tsd Thermal Shutdown (Note 3)150170−°C
Tsdhys Thermal Shutdown Hysteresis (Note 3)−20−°C
VRM 11 DAC
System Voltage Accuracy1.0 V < DAC < 1.6 V
0.8 V < DAC < 1.0 V
0.5 V < DAC < 0.8 V
3. Design guaranteed.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
5. Guaranteed by design; not tested in production.
6. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
7. No DAC offset is implemented for AMD operation.
= 0.1 mF unless otherwise noted.
VCC
− VSW = 12 V−16−ns
BST
− VSW = 12 V−11−ns
BST
LOAD
LOAD
= 3 nF,
= 3 nF,
−20−ns
−20−ns
−TBD2.2
LOAD
LOAD
= 3 nF,
= 3 nF,
−20−ns
−20−ns
−
−
−
−
−
−
±0.5
±5.0
±8.0
%
mV
mV
W
W
W
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NCP5395
DRVL
DRVH−SW
SW
IN
tpdl
DRVL
90%
tf
DRVL
90%
2V
tpdh
10%
DRVH
10%
th
DRVH
90%90%
tpdl
DRVH
tf
DRVH
tpdh
10%
tr
DRVL
10%2V
DRVL
Figure 5. Timing Diagram
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Table 2. VRM11 VID CODES
V
ID7
800 mV
0000000000
0000000101
000000101.6000002
000000111.5937503
000001001.5875004
000001011.5812505
000001101.5750006
000001111.5687507
000010001.5625008
000010011.5562509
000010101.550000A
000010111.543750B
000011001.537500C
000011011.531250D
000011101.525000E
000011111.518750F
000100001.5125010
000100011.5062511
000100101.5000012
000100111.4937513
000101001.4875014
000101011.4812515
000101101.4750016
000101111.4687517
000110001.4625018
000110011.4562519
000110101.450001A
000110111.443751B
000111001.437501C
000111011.431251D
000111101.425001E
000111111.418751F
001000001.4125020
001000011.4062521
001000101.4000022
001000111.3937523
001001001.3875024
001001011.3812525
001001101.3750026
001001111.3687527
001010001.3625028
001010011.3562529
001010101.350002A
001010111.343752B
001011001.337502C
001011011.331252D
V
ID6
400 mV
V
ID5
200 mV
V
ID4
100 mV
V
ID3
50 mV
V
ID2
25 mV
V
ID1
12.5 mV
V
ID0
6.25 mV
Voltage (V)HEX
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Table 2. VRM11 VID CODES
V
ID7
800 mV
V
ID6
400 mV
V
ID5
200 mV
V
ID4
100 mV
V
ID3
50 mV
V
ID2
25 mV
V
ID1
12.5 mV
001011101.325002E
001011111.318752F
001100001.3125030
001100011.3062531
001100101.3000032
001100111.2937533
001101001.2875034
001101011.2812535
001101101.2750036
001101111.2687537
001110001.2625038
001110011.2562539
001110101.250003A
001110111.243753B
001111001.237503C
001111011.231253D
001111101.225003E
001111111.218753F
010000001.2125040
010000011.2062541
010000101.2000042
010000111.1937543
010001001.1875044
010001011.1812545
010001101.1750046
010001111.1687547
010010001.1625048
010010011.1562549
010010101.150004A
010010111.143754B
010011001.137504C
010011011.131254D
010011101.125004E
010011111.118754F
010100001.1125050
010100011.1062551
010100101.1000052
010100111.0937553
010101001.0875054
010101011.0812555
010101101.0750056
010101111.0687557
010110001.0625058
010110011.0562559
010110101.050005A
010110111.043755B
V
ID0
6.25 mV
HEXVoltage (V)
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NCP5395
Table 2. VRM11 VID CODES
V
ID7
800 mV
V
ID6
400 mV
V
ID5
200 mV
V
ID4
100 mV
V
ID3
50 mV
V
ID2
25 mV
V
ID1
12.5 mV
010111001.037505C
010111011.031255D
010111101.025005E
010111111.018755F
011000001.0125060
011000011.0062561
011000101.0000062
011000110.9937563
011001000.9875064
011001010.9812565
011001100.9750066
011001110.9687567
011010000.9625068
011010010.9562569
011010100.950006A
011010110.943756B
011011000.937506C
011011010.931256D
011011100.925006E
011011110.918756F
011100000.9125070
011100010.9062571
011100100.9000072
011100110.8937573
011101000.8875074
011101010.8812575
011101100.8750076
011101110.8687577
011110000.8625078
011110010.8562579
011110100.850007A
011110110.843757B
011111000.837507C
011111010.831257D
011111100.825007E
011111110.818757F
100000000.8125080
100000010.8062581
100000100.8000082
100000110.7937583
100001000.7875084
100001010.7812585
100001100.7750086
100001110.7687587
100010000.7625088
100010010.7562589
V
ID0
6.25 mV
HEXVoltage (V)
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NCP5395
Table 2. VRM11 VID CODES
V
ID7
800 mV
V
ID6
400 mV
V
ID5
200 mV
V
ID4
100 mV
V
ID3
50 mV
V
ID2
25 mV
V
ID1
12.5 mV
100010100.750008A
100010110.743758B
100011000.737508C
100011010.731258D
100011100.725008E
100011110.718758F
100100000.7125090
100100010.7062591
100100100.7000092
100100110.6937593
100101000.6875094
100101010.6812595
100101100.6750096
100101110.6687597
100110000.6625098
100110010.6562599
100110100.650009A
100110110.643759B
100111000.637509C
100111010.631259D
100111100.625009E
100111110.618759F
101000000.61250A0
101000010.60625A1
101000100.60000A2
101000110.59375A3
101001000.58750A4
101001010.58125A5
101001100.57500A6
101001110.56875A7
101010000.56250A8
101010010.55625A9
101010100.55000AA
101010110.54375AB
101011000.53750AC
101011010.53125AD
101011100.52500AE
101011110.51875AF
101100000.51250B0
101100010.50625B1
101100100.50000B2
11111110OFFFE
11111111OFFFF
V
ID0
6.25 mV
HEXVoltage (V)
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NCP5395
ParameterTest ConditionTYPMAXUnits
VR10 DAC
System Voltage Accuracy
8. Internal DAC voltage is centered 19 mV below the listed Voltage. For VR11.1/VR11.0/VR10
No DAC offset is implemented for AMD operation.
1.0 V < DAC < 1.6 V
0. 83125 V < DAC < 1.0 V
−
−
±0.5
±5
%
mV
V
ID4
400 mV
V
ID3
200 mV
V
ID2
100 mV
V
ID1
50 mV
V
ID0
25 mV
V
ID5
12.5 mV
V
ID6
6.25 mV
Voltage (V)
01010111.60000
01010101.59375
01011011.58750
01011001.58125
01011111.57500
01011101.56875
01100011.56250
01100001.55625
01100111.55000
01100101.54375
01101011.53750
01101001.53125
01101111.52500
01101101.51875
01110011.51250
01110001.50625
01110111.50000
01110101.49375
01111011.48750
01111001.48125
01111111.47500
01111101.46875
10000011.46250
10000001.45625
10000111.45000
10000101.44375
10001011.43750
10001001.43125
10001111.42500
10001101.41875
10010011.41250
10010001.40625
10010111.40000
10010101.39375
10011011.38750
10011001.38125
10011111.37500
10011101.36875
10100011.36250
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NCP5395
Table 3. DAC CODES FOR VRM 10
V
ID4
400 mV
10100001.35625
10100111.35000
10100101.34375
10101011.33750
10101001.33125
10101111.32500
10101101.31875
10110011.31250
10110001.30625
10110111.30000
10110101.29375
10111011.28750
10111001.28125
10111111.27500
10111101.26875
11000011.26250
11000001.25625
11000111.25000
11000101.24375
11001011.23750
11001001.23125
11001111.22500
11001101.21875
11010011.21250
11010001.20625
11010111.20000
11010101.19375
11011011.18750
11011001.18125
11011111.17500
11011101.16875
11100011.16250
11100001.15625
11100111.15000
11100101.14375
11101011.13750
11101001.13125
11101111.12500
11101101.11875
11110011.11250
11110001.10625
11110111.10000
11110101.09375
1111101OFF
1111100OFF
V
ID3
200 mV
V
ID2
100 mV
V
ID1
50 mV
V
ID0
25 mV
V
ID5
12.5 mV
V
ID6
6.25 mV
Voltage (V)
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NCP5395
Table 3. DAC CODES FOR VRM 10
V
ID4
400 mV
V
ID3
200 mV
V
ID2
100 mV
V
ID1
50 mV
V
ID0
25 mV
V
ID5
12.5 mV
1111111OFF
1111110OFF
00000011.08750
00000001.08125
00000111.07500
00000101.06875
00001011.06250
00001001.05625
00001111.05000
00001101.04375
00010011.03750
00010001.03125
00010111.02500
00010101.01875
00011011.01250
00011001.00625
00011111.00000
00011100.99375
00100010.98750
00100000.98125
00100110.97500
00100100.96875
00101010.96250
00101000.95625
00101110.95000
00101100.94375
00110010.93750
00110000.93125
00110110.92500
00110100.91875
00111010.91250
00111000.90625
00111110.90000
00111100.89375
01000010.88750
01000000.88125
01000110.87500
01000100.86875
01001010.86250
01001000.85625
01001110.85000
01001100.84375
01010010.83750
01010000.83125
V
ID6
6.25 mV
Voltage (V)
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NCP5395
ParameterTest ConditionMINTYPMAXUnits
AMD DAC
System Voltage Accuracy
9. NOTE: No DAC offset is implemented for AMD operation. DAC should be equal to the Nominal V
Table 4. AMD PROCESSOR 6−BIT VID CODE
V
ID5VID4VID3VID2VID1VID0
0000001.550V
0000011.525V
0000101.500V
0000111.475V
0001001.450V
0001011.425V
0001101.400V
0001111.375V
0010001.350V
0010011.325V
0010101.300V
0010111.275V
0011001.250V
0011011.225V
0011101.200V
0011111.175V
0100001.150V
0100011.125V
0100101.100V
0100111.075V
0101001.050V
0101011.025V
0101101.000V
0101110.975V
0110000.950V
0110010.925V
0110100.900V
0110110.875V
0111000.850V
0111010.825V
0111100.800V
0111110.775V
1000000.7625V
1000010.7500V
1.0 V < DAC < 1.55V
0.6 V ≤ DAC < 1.0V
0.375 V < DAC < 0.6V
(VID) Codes
−
−
−
Nominal
V
out
Units
−
−
−
shown in the table.
out
±0.5
±1.0
±2.0
%
%
%
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NCP5395
Table 4. AMD PROCESSOR 6−BIT VID CODE
(VID) Codes
V
V
ID5
ID4
V
V
ID3
ID2
V
V
ID1
1000100.7375V
1000110.7250V
1001000.7125V
1001010.7000V
1001100.6875V
1001110.6750V
1010000.6625V
1010010.6500V
1010100.6375V
1010110.6250V
1011000.6125V
1011010.6000V
1011100.5875V
1011110.5750V
1100000.5625V
1100010.5500V
1100100.5375V
1100110.5250V
1101000.5125V
1101010.5000V
1101100.4875V
1101110.4750V
1110000.4625V
1110010.4500V
1110100.4375V
1110110.4250V
1111000.4125V
1111010.4000V
1111100.3875V
1111110.3750V
ID0
Nominal
Nominal
V
V
out
out
Units
Units
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NCP5395
FUNCTIONAL DESCRIPTIONS
General
The NCP5395 dual edge modulated multiphase PWM
controller is specifically designed with the necessary
features for a high current CPU system. The IC consists of
the following blocks: Precision Flexible DAC, Differential
Remote Voltage Sense Amplifier, High Performance
Voltage Error Amplifier, Differential Current Feedback
Amplifiers, Precision Oscillator and Saw−tooth Generator,
and PWM Comparators with Hysteresis. The controller also
supports power saving mode as per Intel VR11.1 by
accurately monitoring the current and switching between
multi−phase and single phase operations as requested by the
microprocessor system. Protection features include:
Undervoltage Lockout, Soft−Start, Overcurrent Protection,
Overvoltage Protection, and Power Good Monitor.
Precision Programmable DAC
A precision flexible DAC is provided. The DAC will
conform to 2 different specifications: AMD or VR11.1. The
VID7/AMD pin is provided to determine which DAC
specification will be used and which soft−start mode the part
will use for power up. There are two soft−start modes. If
VID7/AMD is above it’s threshold the device will soft−start
and ramp directly to the DAC code present on the VID
inputs. The following truth table describes the functionality:
voltage with the DAC voltage. The non−inverting input
sums the remote output voltage with a 1.3 V reference. The
resulting voltage at the output of the remote sense amplifier is:
V
Diffout
+ V
) 1.3 V * V
out
dac
* V
outreturn
This signal then goes through a standard compensation
circuit and into the inverting input of the error amplifier. The
non−inverting input of the error amplifier is also connected
to the 1.3 V reference. The 1.3 V reference then is subtracted
out and the error signal at the comp pin of the error amplifier
is as normally expected:
V
comp
+ V
dac
* V
out
The non−inverting input of the remote sense amplifier is
pulled low through a small current sink during a fault
condition to prevent accidental charging of the regulator
output.
2/3/4 Phase Operation
The part can be configured to 2−, 3−, or 4−phase mode. In
2− or 3−phase mode, the internal drivers will be used. In
4−phase mode, an external driver must be used to drive
phase 4. The NCP5359 driver is suggested to be used with
the controller. The input to G4 pin will decide which phase
mode the system is in operation. Please refer to the
Application Schematics for more information.
VID7/AMD PinVID7Enable
Above AMD
Threshold
Below AMD
Threshold
VID INPUTS
Not
active
ActiveVR11.1
Pin Mode
AMD
Threshol
ds
Threshol
ds
Soft Start
Mode
Ramp to
VID
Ramp to
Vboot
VID0−VID7 control the target regulation voltage during
normal operation. In AMD mode the VID capture is enabled
just before soft start. In VR11 mode the VID capture is
enabled at the end of the V
waiting period. If the VID
BOOT
is valid the DAC will track to it. If an invalid VID occurs it
will be ignored for 10 ms before the controller shuts down.
Remote Sense Amplifier
A high performance differential amplifier is provided to
accurately sense the output voltage of the regulator. The
non−inverting input should be connected to the regulator’s
output voltage. The inverting input should be connected to
the return line of the regulator. Both connection points are
intended to be at a remote point so that the most accurate
reading of the output voltage can be obtained. The amplifier
is configured in a very unique way. First, the gain of the
amplifier is internally set to unity. Second, both the inverting
and non−inverting inputs of the amplifier are summing
nodes. The inverting input sums the output voltage return
High Performance Voltage Error Amplifier
A high performance voltage error amplifier is provided.
The error amplifier’s inverting input is VFB and its output
is COMP. A standard type 3 compensation circuit is used
compensate the system. This involves a 3 pole, 2 zero
compensation network. The comp pin is pulled to ground
before soft−start for smooth start up.
Differential Current Sense
Four differential amplifiers are provided to sense the
output current of each phase. These current sense amplifiers
sense the current through the corresponding phase. A
voltage is generated across a current sense element such as
an inductor or sense resistor. The sense element should be
between 0.5 mW and 1.5 mW. It is possible to sense both
negative and positive going current. The information is used
to create the signal CSSUM and provide feedback for
current sharing.
Precision Oscillator
A programmable precision oscillator is provided. This
oscillator is programmed by the summed resistance of an
oscillator resistor and a current limit resistor. The output
voltage of this pin is used as the reference for the current
limit. The oscillator frequency range is 125 KHz/phase to
1000 KHz/phase. The oscillator frequency is proportional to
the current drawn out of the OSC pin.
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NCP5395
PWM Comparators
Four PWM comparators are incorporated within the IC.
The non−inverting input of the comparators is connected to
the output of the error amplifier. The inverting input is
connected to a summed output of the phase current and the
oscillator ramp voltage with an offset. The output of the
comparator generates the PWM control signals.
During steady state operation, the duty cycle will center
on the valley of the saw−tooth waveform. During a transient
event, the controller will operate somewhat hysteretic, with
the duty cycle climbing along either the down ramp, up
ramp, or both.
Soft−Start
Soft−start is implemented internally. A digital counter
steps the DAC up from zero to the target voltage based on the
predetermined rate in the spec table. There are 2 possible
soft start modes: VR11 and AMD. AMD mode simply ramps
V
from 0 V directly to the DAC setting. The VR11 mode
core
ramps DAC to 1.1 V, pauses for 500 ms, reads the DAC
setting, then ramps to the final DAC setting.
Digital Slew Rate Limiter / Soft Start Block
The slew rate limiter and the soft−start block are to be
implemented with a digital up/down counter controlled by
an oscillator that is synchronized to VID line changes.
During soft start the DAC will ramp at the soft−start rate,
after soft start is complete the ramp rate will follow either the
Intel or the AMD slew rate depending on the mode.
Under Voltage Lockouts
An under voltage circuit senses the VCC input of the
controller and the V
input of the driver. During power up
CCP
the input voltage to the controller is monitored. The PWM
outputs and the soft start circuit are disabled until the input
voltage exceeds the threshold voltage of the comparators.
Hysteresis is incorporated within the comparators.
The DRVON is held low until V
threshold during startup. If V
CCP
decreases below the stop
reaches the start
CCP
threshold, the output gate will be forced low unit input
voltage V
Over Current Latch
rises above the startup threshold.
CCP
A programmable over current latch is incorporated within
the IC. The oscillator pin provides the reference voltage for
this pin. A resistor divider from the OSC pin generates the
ILIM voltage. The latch is set when the current information
on V
exceeds the programmed voltage plus a 1.3 V
droop
offset. DRVON is immediately set low. To recover the part
must be reset by the EN pin or by cycling VCC.
UVLO Monitor
If the output voltage falls greater than 300 mV below the
DAC voltage for more than 5 ms the UVLO comparator will
trip sending the VR_RDY signal low.
Over Voltage Protection
The output voltage is monitored at the input of the
differential amplifier. During normal operation, if the output
voltage exceeds the DAC voltage by 185 mV, or 285 mV if
in AMD mode, the VR_RDY flag will transition low the
high side gate drivers set to low, and the low side gate drivers
are all brought to high until the voltage falls below the OVP
threshold. If the over voltage trip 8 times the output voltage
will shut down. The OVP will not shut down the controller
if it occurs during soft−start. This is to allow the controller
to pull the output down to the DAC voltage and start up into
a pre−charged output.
V
Power ON Reset OVP
CCP
The V
the CPU during start up. When V
power on reset OVP feature is used to protect
CCP
is higher than 3.2 V, the
CCP
gate driver will monitor the switching node SW pin. If
SWNx pin higher than 1.9 V, the bottom gate will be forced
to high for discharge of the output capacitor. This works best
if the 5 volt standby is diode OR’ed into V
with the 12 V
CCP
rail. The fault mode will be latched and the DRVON pin will
be forced to low, unless V
is reduced below the UVLO
CCP
threshold.
Power Saving Mode
The controller is designed to allow power saving mode to
maintain a maximum efficiency. When a low PSI signal
from microcontroller is received, the controller will keep
one phase operating while shedding other phases. The active
one phase will operate in diode emulation mode, minimizing
power losses in light load. When the low PSI signal is
de−asserted, the dropped phases will be pulled back in to be
ready for heavy load.
Adaptive Non−overlap
The non−overlap dead time control is used to avoid shoot
through damage to the power MOSFETs. When the PWM
signal pull high, DRVL will go low after a propagation
delay, the controller monitors the switching node (SWN) pin
voltage and the gate voltage of the MOSFET to know the
status of the MOSFET. When the low side MOSFET status
is off an internal timer will delay turn on of the high–side
MOSFET. When the PWM pull low, gate DRVH will go low
after the propagation delay (tpdDRVH). The time to turn off
the high side MOSFET is depending on the total gate charge
of the high−side MOSFET. A timer will be triggered once
the high side MOSFET is turn off to delay the turn on the
low−side MOSFET.
Layout Guidelines
Layout is very important thing for design a DC−DC
converter. Bootstrap capacitor and Vin capacitor are most
critical items, it should be placed as close as to the controller
IC. Another item is using a GND plane. Ground plane can
provide a good return path for gate drives for reducing the
ground noise. Therefore GND pin should be directly
connected to the ground plane and close to the low−side
MOSFET source pin. Also, the gate drive trace should be
considered. The gate drives has a high di/dt when switching,
therefore a minimized gate drives trace can reduce the di/dv,
raise and fall time for reduce the switching loss.
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1.25 V
NCP5395
ENABLE
5 V
12 V
5 and 12 Good
DRVON
1 ms − 20 ms
Rise Time
1 ms − 20 ms
Rise Time
12 V
1.25 V
VID Not ValidVID Valid
VR11 Soft−start
Mode Latched
3.5 ms
Calibration Time
VID Captured
Soft−start
Slew Rate
DAC Setting
VOUT/DAC
VR_RDY
1.10 V
Soft−start
Slew Rate
500 ms
500 ms
Figure 6. VR11.1 Start Up Timing Diagram
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ENABLE
VID7/AMD
1 ms − 20 ms
V
CC
V
CCP
Rise Time
5 V
5 V
1 ms − 20 ms
Rise Time
9.5 V
NCP5395
12 V
VCC and V
DRVON
VOUT/DAC
CCP
UVLO
AMD/Legacy Soft Start
Mode Latched
3.5 ms
Calibration Time
DAC Setting
SS Slew
Rate
500 ms
VR_RDY
Figure 7. AMD / Legacy Start Up Timing Diagram
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2 X
l
48 X
PIN 1
LOCATION
0.15 C
0.10 C
0.08 C
2 X
0.15 C
DA
TOP VIEW
SIDE VIEW
NCP5395
PACKAGE DIMENSIONS
QFN48
CASE 485K−02
ISSUE C
B
E
(A3)
A
A1
C
SEATING
PLANE
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS.
3. DIMENSION b APPLIES TO THE PLATED
TERMINAL AND IS MEASURED ABETWEEN
0.25 AND 0.30 MM FROM TERMINAL
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MILLIMETERS
DIM MIN NOM MAX
A 0.800 0.900 1.000
A1 0.000 0.025 0.050
A30.200 REF
b 0.180 0.250 0.300
D7.000 BSC
D2 5.260 5.360 5.460
E7.000 BSC
E2 5.260 5.360 5.460
e0.500 BSC
K 0.200 −−−− −−−−
L 0.300 0.400 0.500
L
48 X
D2
13
12
24
EXPOSED PAD
K
4 X
25
E2
1
4837
NOTE 3
48 X
b
0.10 C
A B
0.05 C
BOTTOM VIEW
The products described herein (NCP5395), may be covered by one or more of the following U.S. patents; US07057381.There may be other patents pending.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
36
e
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
Sales Representative
NCP5395/D
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