Datasheet N7640, N7220 Datasheet (HAMAMATSU)

EB-CCD

TAPPB0068EA

SENSITIVITY (V

.

µJ

-1

.

cm

-2

)

200

1

10

100

1000

300 400 500 600 700 800 900 1000 1100

EB-CCD
N7640

NORMAL 2/3" CCD

WAVELENGTH (nm)

TV SCAN RATE TYPE : N7640
SLOW SCAN TYPE : N7220

PRELIMINARY

For Low-Light-Level Imaging with high S/N ratio

IMAGING COMPARISON

Using Resolution Test Chart

Commercial 2/3-inch CCD

■ Imaging Conditions

Object illuminance: 0.1 lx
Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2

EB-CCD N7640

OVERVIEW

The EB-CCD is an absolutely new high-sensitivity imaging
device that employs the “Electron Bombardment (EB)” effect for
image intensification. The EB-CCD basically consists of a
photocathode and a CCD chip arranged in parallel in a vacuum
tube. An optical image is converted at the photocathode into an
electron image, which is then accelerated and directly bom­bards the CCD surface to produce electron multiplication. Even
a low-light-level image can be brought into view with a high S/N
ratio.
Two types of EB-CCD are available depending on the readout
method: the N7640 designed to operate at the TV scan rate
and the N7220 for slow scan readout. Both types are compact
and simple in structure, and deliver high sensitivity yet ensure
high S/N ratio. The EB-CCD will open up new applications as
the next generation of low-light-level imaging devices.

SENSITIVITY COMPARISON

(Calculated data)

APPLICATIONS

SPECTRAL RESPONSE

●High sensitivity video camera

• Semiconductor wafer inspection

• Real time fluorescence observation

• Biochemical emission imaging

• Biophoton imaging

FEATURES

TV scan rate type

●Resolution 400 TV lines

●Gain 700

●Detection limit

*1

0.3 mlx

Slow scan type

●Resolution 450 TV lines

●Gain 1300

●Detection limit Detectable down to single photon

region

*1: Minimum illuminance on the photocathode required to produce an image.

SPECIFICATIONS

TII B0020EA

2

10

1

10

QUANTUM

0

10

QUANTUM EFFICIENCY (%)

-1

10

CATHODE RADIANT SENSITIVITY (mA/W)

-2

10

100 200 300 400 500 600 700

EFFICIENCY

WAVELENGTH (nm)

CATHODE
SENSITIVITY

800 900

1000

●EB-CCD

Parameter

Focusing Method
Window Material
Photocathode
Maximum Supply Voltage
Gain
Limiting Resolution
Effective Area (H✕V)
Casing Material
Lead Wire Sheath
Dimension

*2: N7640

*2

(Typ.)

(Typ.)

at -6 kV, N7220 at -8 kV

9.2 ✕ 6.8

●Internal CCD

Parameter

Drive Method
CCD Format
Pixel Size
Number of Effective Pixels (H✕V)
Saturation Charge
Dark Current
Readout Noise
CCD Readout Frequency
Vertical Clock
Horizontal Clock

Output

*3: At 25 °C, MPP (Multi-Pinned Phase) operation, 33 ms/frame
*4: At 0 °C, MPP (Multi-Pinned Phase) operation

*5

MOSFET source follower, two stages

Frame transfer

2/3 inch format

658 ✕ 490

*3

80 e- / (pixel·frame)

2 phases
2 phases

with load

●Ratings

Parameter

Operating Temperature Range
Storage Temperature Range

N7640 N7220

Proximity-focused

Synthetic silica

Multialkali

-6
700
400

Poly Oxy Methylene (POM)

Teflon

φ53 ✕ 16.5 (excluding lead pins)

N7640 N7220 Unit

Full frame transfer

14 ✕ 14

3

65 ✕10

100

14

MOSFET source follower, one stage

*5: N7640 at 12 MHz, N7220 at 150 kHz

Min. Max.

-30

-40

*4

-8

1300

450

12.2 ✕ 12.2

1 inch format

24 ✕ 24

512 ✕ 512

200 ✕10

300 e- / (pixel·s)

2 phases
2 phases

3

50

1

+40
+40

Unit

kV

TV lines

mm

mm

mm

electrons

e- RMS

MHz

Unit

-

-

-

-

-

-

-

-

-

-

-

-

-

°C
°C

PHOTON COUNTING IMAGING EXAMPLE

Slow Scan Type N7220

Exposure Time: 0.02 s Exposure Time: 20 s

Object Illuminance

0.00002 lx

●Conditions

Light source
Object illuminance
Lens F value
Supply voltage
Ambient temperature

Tungsten lamp

-5

2✕10

lx

5.6

-8 kV

-25 C

(Resolution 450 TV lines)

DIMENSIONAL OUTLINES (Unit: mm)

TV Rate Type (Frame Transfer CCD) N7640

EFFECTIVE
IMAGING AREA

9.2(H)✕6.8(V) MIN.

6.8

LEAD (TEFLON COVER)
RED : PHOTOCATHODE (–HV)
BLACK : OUTER FLANGE (GND)

9.2

Input Side

PHOTOCATHODE
(MULTIALKALI)

3.57

INPUT WINDOW
(SYNTHETIC SILICA)

Slow Scan Type (Full Frame Transfer CCD) N7220

EFFECTIVE
IMAGING AREA

12.2✕12.2 MIN.

PHOTOCATHODE
(MULTIALKALI)

6.9 ± 0.1

+0

53-0.3

2.0 ± 0.3

5.9±0.1

19

16.5 ± 0.3

BLACKRED

0.5 ± 0.2
5 ± 0.3

29

INDEX MARK

15.2 ± 0.2

Output Side

15.2±0.2

1.78 ± 0.15

CABLE LENGTH
200 MIN.

TAPPA0037EA

INPUT WINDOW
(SYNTHETIC SILICA)

Input Side

LEAD (TEFLON COVER)
RED : PHOTOCATHODE (–HV)
BLACK : OUTER FLANGE (GND)

+0

19

53–0.3

2±0.2

16.5 ± 0.3

29

BLACKRED

0.5 ± 0.2
5 ± 0.3

INDEX MARK

CABLE LENGTH
200 MIN.

Output Side

=19.6

1.78×11

TAPPA0034ED

EB-CCD

The C8080 is an EB-CCD camera incorporating a TV scan type EB-CCD (N7640). The
C8080 is designed for simple use and functions, yet capable of imaging at very low

CAMERA

C8080

light levels. Hamamatsu also provides the C8081 power supply ideal for use with the
C8080 EB-CCD camera.

●SPECIFICATIONS

Parameter

EB-CCD
Image Sensor
Spectral Response
Gain
Effective Area

8.58 ✕ 6.86 (2/3 inch format)
Number of Effective Pixels (H ✕ V)
Pixel Size
Saturation Charge
Frame Rate
Image Output Method
Operating Temperature Range
Storage Temperature Range
Humidity Range
Input Voltage

(Input Current)

Below 90 (no condensation)

(500 mA)

+15
Dimension (W ✕ H ✕ D)
Weight

●DEDICATED POWER SUPPLY C8081 (Option)

Parameter

Input Voltage
Maximum Power Consumption
Dimension (W ✕ H ✕ D)
Weight

Specifications

EB-CCD (N7640)

Frame transfer CCD

185 to 900
200 to 700

640 ✕ 480

14 ✕ 14
130 000

60 Hz interlace

RS-170 (EIA)

0 to +40

-10 to +40

, -15

(500 mA)

, +5

90 ✕ 75 ✕ 160

Approx. 1.4

Specifications

85 to 135 (50 Hz, 60 Hz)

90

161 ✕ 44 ✕ 213

Approx. 1.2

(500 mA)

Unit

-

-

nm

-

mm

-

µm

electrons

-

-

°C
°C

%

V

mm

kg

Unit

V ac

VA

mm

kg

DIMENSIONAL OUTLINES (Unit: mm)

● C8080

75

418

Subject to local technical requirements and regulations, availability of products in this promotional material may vary. Please consult with our sales office.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies and omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: [phone], Fax: [phone]

U.S.A.:

Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone] E-mail: [email protected]

Germany:

Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone] E-mail: [email protected]

France:

Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone] E-mail: [email protected]

United Kingdom:

North Europe:
Italy:

Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone] E-mail: [email protected]

Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: [phone], Fax: [phone] E-mail: [email protected]

Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone] E-mail: [email protected]

90

C MOUNT
DEPTH: 6

160 124.1

EB-CCD CAMERA

4040

66

99

HOMEPAGE URL http://www.hamamatsu.com

C8080

4-M3, DEPTH: 8

1/4-20 UNC, DEPTH: 8

32

GAIN CONTROLH.V. SWITCH

HV

SENSITIVITYON/OFF

MIN. MAX.

VIDEO

CONTROL

POWER

POWER INPUT
(HIROSE HR10A-R13R-20SB)

VIDEO SIGNAL OUTPUT (BNC)

TAPPA0041EA

TAPP1032E01
OCT. 2000 (9910) IP
Printed in Japan (1000)