Mean on-state current. T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current. T
D.C. on-state current. T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
2
t capacity for fusing tp=10ms, VRM=0.6V
2
I
t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)150A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)300A/µs
Peak reverse gate voltage5V
Mean forward gate power5W
Peak forward gate power50W
Non-trigger gate voltage, (Note 7)0.25V
Operating temperature range-40 to +125°C
Storage temperature range-40 to +150°C
=55°C, (note 2)4151A
sink
=85°C, (note 2)2946A
sink
=85°C, (note 3)1877A
sink
=25°C, (note 2)8048A
sink
=25°C, (note 4)7336A
sink
, (note 5)54kA
RRM
, (note 5)14.6x10
RRM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
60kA
6
18.0x10
6
UNITS
UNITS
A2s
A2s
Notes: -
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
7) Rated V
Data Sheet. Types N4151FC360 to N4151FC420 Issue 1.Page 1 of 10April, 2002
, ITM=5500A, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
initial.
j
below 25°C.
j
=125°C.
case
Page 2
WESTCODE Positive development in power electronicsN4151FC360 to N4151FC420
)
Characteristics
PARAMETERMIN.TYP.MAX. TEST CONDITIONS (Note 1)UNITS
V
Maximum peak on-state voltage--1.87ITM=6000AV
TM
V
Threshold voltage--0.85V
0
r
Slope resistance--0.17
S
dv/dtCritical rate of rise of off-state voltage1000--VD=80% V
I
Peak off-state current--250Rated V
DRM
I
Peak reverse current--250Rated V
RRM
V
Gate trigger voltage--3.0V
GT
I
Gate trigger current--300
GT
I
Holding current--1000Tj=25°CmA
H
t
Gate controlled turn-on delay time-0.71.5
gd
t
Turn-on time-3.05.0
gt
Q
Recovered Charge-13000-µC
rr
Q
Recovered Charge, 50% chord-70009000µC
ra
I
Reverse recovery current-240-A
rm
t
Reverse recovery time, 50% chord-55-
rr
-700-
t
Turn-off time
q
-1100-
R
Thermal resistance, junction to heatsink
th(j-hs
--0.0065 Double side cooledK/W
--0.013Single side cooledK/W
=25°CVD=10V, IT=3A
T
j
=2A, tr=0.5µs, VD=67%V
I
FG
di/dt=10A/µs, T
I
=4000A, tp=2ms, di/dt=10A/µs, Vr=50V
TM
ITM=4000A, tp=2ms, di/dt=10A/µs, Vr=50V,
V
=80%V
dr
ITM=4000A, tp=2ms, di/dt=10A/µs, Vr=50V,
V
=80%V
dr
, linear ramp, gate o/c
DRM
DRM
RRM
=25°C
j
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
, ITM=2000A,
DRM
FMounting force81-98kN
W
Weight-2.8-kg
t
mΩ
V/µs
mA
mA
mA
µs
µs
µs
Notes: -
1) Unless otherwise indicated T
=125°C.
j
Data Sheet. Types N4151FC360 to N4151FC420 Issue 1.Page 2 of 10April, 2002
Page 3
WESTCODE Positive development in power electronicsN4151FC360 to N4151FC420
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
2
I
=
AV
00
2
AV
V
=
RSM
V
∆
R
T
th
max
V
V
D
R
DC V
TTT
−=∆
Hsj
Where V0=0.85V, rs=0.17mΩ,
R
= Supplementary thermal impedance, see table below.
th
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle30°60°90°120°180°270°d.c.
Square wave Double Side Cooled0.007170.007070.006980.006890.006730.006520.0065
Square wave Single Side Cooled0.01370.013590.013490.01340.013230.013010.013
Sine wave Double Side Cooled0.007090.006970.006870.006780.00654
Sine wave Single Side Cooled0.01360.013480.013370.013280.01303
Form Factors
Conduction Angle30°60°90°120°180°270°d.c.
Square wave3.462.4521.731.411.151
Sine wave3.982.782.221.881.57
5.2 Calculating VT using ABCD Coefficients
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
given below:
T
vs. VT, on page 5 is represented in two ways;
T
and rs tangent used for rating purposes and
0
T
in
()
Data Sheet. Types N4151FC360 to N4151FC420 Issue 1.Page 3 of 10April, 2002
IDICIBAV⋅+⋅+⋅+=ln
TTTT
Page 4
WESTCODE Positive development in power electronicsN4151FC360 to N4151FC420
p
p
t
The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he
resulting values for V
that plotted.
5.3 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
= Thermal resistance at time t.
t
= Amplitude of pth term.
r
= Time Constant of rth term.
τ
agree with the true device characteristic over a current range, which is limited to
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types N4151FC360 to N4151FC420 Issue 1.Page 10 of 10April, 2002