Datasheet N2367MK200, N2367MK220 Datasheet (Westcode Semiconductors)

Wespack Phase Control Thyristor

Types N2367MK200 to N2367MK220

Development Type No.: NX149MK200-220

Absolute Maximum Ratings

Date:- 14th October, 2014

Data Sheet Issue:- 3

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 2000-2200 V Non-repetitive peak off-state voltage, (note 1) 2000-2200 V Repetitive peak reverse voltage, (note 1) 2000-2200 V Non-repetitive peak reverse voltage, (note 1) 2100-2300 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)M

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=60%V I2t

(di/dt)crCritical rate of rise of on-state current (note 6)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T

=25°C, (note 4) 4097 A

sink

Peak non-repetitive surge tp=10ms, Vrm=60%V

=55°C, (note 2) 2367 A

sink

=85°C, (note 2) 1644 A

sink

=85°C, (note 3) 931 A

sink

=25°C, (note 2) 4642 A

sink

, (note 5) 32.4 kA

RRM

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

, (note 5) 5.25×10

RRM

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

(continuous, 50Hz) 100 (repetitive, 50Hz, 60s) 200

(non-repetitive) 400 Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, ITM=2000A, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

35.7 kA

6.37×10

6

A2s A2s

A/µs

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 1 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rr

t

rr

t

q

Maximum peak on-state voltage - - 1.50 ITM=3000A V Maximum peak on-state voltage - - 2.40 ITM=7200A V Threshold voltage - - 0.883 V Slope resistance - - 0.210

, linear ramp, gate o/c

DRM

Peak off-state current - - 100 Rated V Peak reverse current - - 100 Rated V Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300 Gate non-trigger voltage

- - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA mA

mA

V Holding current - - 1000 Tj=25°C mA Gate-controlled turn-on delay time - 0.8 2.0 µs Turn-on time - 1.4 3.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, IT=2000A, di/dt=10A/µs,

DRM

µs Recovered charge - 4000 - µC Recovered charge, 50% Chord - 2300 2600 µC Reverse recovery current - 155 - A Reverse recovery time - 30 -

- 375 -

Turn-off time

- 650 -

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

- - 0.0140 Double side cooled K/W

R

thJK

Thermal resistance, junction to heatsink

- - 0.0253 Anode side cooled K/W

- - 0.0314 Cathode side cooled K/W F Mounting force 25 - 31 Note 2. kN W

t

Weight - 270 - g

Notes:-

1) Unless otherwise indicated T

2)

For other clamp forces, please consult factory.

=125°C.

j

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 2 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

D

DC V

R

20 2000 2100 1250 22 2200 2300 1350

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 3 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

∆

(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2

4

I

=

AV

Where V

R

th

=0.883V, rT=0.210mΩ,

T0

= Supplementary thermal impedance, see table below and

00

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

and:

W

AV

=

R

T

th

max

−=∆

TTT

Kj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.0175 0.0168 0.0162 0.0157 0.0150 0.0143 0.0140

Square wave Cathode Side Cooled 0.0357 0.0344 0.0335 0.0329 0.0322 0.0316 0.0314

Sine wave Double Side Cooled 0.0169 0.0163 0.0158 0.0151 0.0140

Sine wave Cathode Side Cooled 0.0349 0.0340 0.0334 0.0324 0.0318

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.46 2.45 2 1.73 1.41 1.15 1

Sine wave 3.98 2.78 2.22 1.88 1.57

8.2 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V to that plotted.

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 4 of 11 October, 2014

agree with the true device characteristic over a current range, which is limited

T

25°C Coefficients 125°C Coefficients

A 0.8230476 A -0.1878519 B 0.07410681 B 0.2685822 C 1.691121×10 D -7.725044×10

-4

-3

C 3.595580×10 D -0.02813815

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

8.3 D.C. Thermal Impedance Calculation

−

=

np

⎛ ⎜

∑

=

p

1

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds. r

= Thermal resistance at time t.

t

r

= Amplitude of pth term.

p

= Time Constant of rth term.

τ

p

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

p

9.0 Reverse recovery ratings (i) Q

is based on 50% Irm chord as shown in Fig. 1

ra

1 2 3 4

9.165875×10

0.3739650 0.1072757 0.02914000 4.430391×10

0.02275 4.710571×10

2.682304 0.239177 0.06309731 2.003393×10

-3

1 2 3 4

3.090048×10

D.C. Double Side Cooled

1

pt

⎜ ⎝

-3

t

τ

p

err

−⋅=

4.533206×10

3.064613×10

⎞ ⎟

⎟ ⎠

-4

-3

1.337550×10

6.485916×10

-3

-4

-3

Fig. 1

is based on a 150µs integration time i.e.

(ii) Q

rr

=

(iii)

FactorK =

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 5 of 11 October, 2014

t

1

t

2

150

s

µ

dtiQ

.

rrrr

∫

0

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

A

Curves

Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance

0.1

N2367MK200-220

0.01

Issue 3

KSC 0.0314K/W

SC 0.0253K/W

DSC 0.0140K/W

(A)

TM

10000

N2367MK200-220

Issue 3

Tj = 25°C

Tj = 125°C

1000

Instantaneous On-state current - I

100

00.511.522.53

Instantaneous On-state voltage - V

(V)

TM

Figure 3 – Gate Characteristics – Trigger limits

7

N2367MK200-220

Issue 3

Tj=25°C

6

IGT, V

Max VG dc

GT

5

(V)

GT

4

0.001

Thermal impedance (K/W)

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Figure 4 – Gate Characteristics – Power Curves

18

N2367MK200-220

Issue 3

Tj=25°C

16

14

12

(V)

GT

10

Max VG dc

Time (s)

3

Gate Trigger Voltage - V

2

25°C

-10°C

1

IGD, V

GD

0

0 0.2 0.4 0.6 0.8 1

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 6 of 11 October, 2014

125°C

Gate Trigger Current - I

-40°C

Min VG dc

(A)

GT

8

PG Max 30W dc

Gate Trigger Voltage - V

6

4

PG 4W dc

2

0

02468

Gate Trigger Current - I

Min VG dc

(A)

GT

10

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Figure 5 – Total Recovered Charge, Q

100000

N2367MK200-220

Issue 3

Tj=125°C

(µC)

rr

10000

rr

4000A 2000A 1000A

500A

Figure 6 – Recovered Charge, Qra (50% chord)

10000

N2367MK200-220

Issue 3

Tj=125°C

4000A 2000A

1000A

(µC)

ra

500A

Recovered charge - Q

Recovered charge, 50% chord - Q

1000

1 10 100 1000

di/dt (A/µs)

Figure 7 – Peak Reverse Recovery Current, I

10000

N2367MK200-220

Issue 3

Tj=125°C

4000A

1000

(A)

rm

100

Reverse recovery current - I

2000A 1000A 500A

1000

1 10 100 1000

Figure 8 – Maximum Recovery Time, t

rm

100

(µs)

rr

10

Reverse recovery time, 50% chord - t

di/dt (A/µs)

(50% chord)

rr

N2367MK200-220

Issue 3

Tj=125°C

4000A 2000A 1000A 500A

10

1 10 100 1000

di/dt (A/µs)

1

1 10 100 1000

di/dt (A/µs)

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 7 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

8000

N2367MK200-220

Issue 3

180°

7000

6000

5000

4000

30°

60°

120°

90°

Figure 10 – On-state current vs. Heatsink temperature – Double Side Cooled (Sine wave)

140

120

100

80

N2367MK200-220

Issue 3

60

3000

Maximum forward dissipation (W)

2000

40

Maximum permissable heatsink temperature (°C)

1000

0

0 500 1000 1500 2000 2500 3000 3500

Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

8000

N2367MK200-220

Issue 3

d.c.

7000

6000

5000

4000

3000

Maximum forward dissipation (W)

2000

30°

60°

90°

120°

270°

180°

20

0

0 500 1000 1500 2000 2500 3000 3500

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

140

120

100

Mean forward current (A) (Whole cycle averaged)

80

30° 60° 90° 120° 180°

N2367MK200-220

Issue 3

60

40

Maximum permissible heatsink temperature (°C)

1000

0

0 1000 2000 3000 4000 5000

Mean Forward Current (Amps) (Whole Cycle Averaged)

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 8 of 11 October, 2014

20

0

0 1000 2000 3000 4000 500 0

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90° 120° 180° d.c.270°

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Figure 13 – On-state current vs. Power dissipation – Cathode Side Cooled (Sine wave)

3500

N2367MK200-220

3000

Issue 3

30°

60°

90°

120°

180°

Figure 14 – On-state current vs. Heatsink temperature – Cathode Side Cooled (Sine wave)

140

120

N2367MK200-220

Issue 3

2500

2000

1500

Maximum forward dissipation (W)

1000

500

0

0 500 1000 1500 2000

Mean forward current (A) (Whole cycle averaged)

Figure 15 – On-state current vs. Power dissipation – Cathode Side Cooled (Square wave)

3500

N2367MK200-220

3000

Issue 3

30°

60°

90°

120°

180°

270°

d.c.

100

80

60

40

Maximum permissable heatsink temperature (°C)

20

0

0 500 1000 1500 2000

Figure 16 – On-state current vs. Heatsink temperature – Cathode Side Cooled (Square wave)

Mean forward current (A) (Whole cycle averaged)

140

120

30° 60° 90° 120° 180°

N2367MK200-220

Issue 3

2500

2000

100

80

1500

Maximum forward dissipation (W)

1000

500

0

0 500 1000 1500 2000 2500

Mean Forward Current (Amps) (Whole Cycle Averaged)

60

40

Maximum permissible heatsink temperature (°C)

20

0

0 500 1000 1500 2000 2500

Mean Forward Current (Amps) (Whole Cycle Averaged)

30° 60° 90° 120° 180° d.c.270°

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 9 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Figure 17 – Maximum surge and I2t Ratings

100000

10000

Total peak half sine surge current (A)

1000

13510 1 5 10 50 100

Duration of surge (ms)

Tj (initial) = 125°C

N2367MK200-220

Duration of surge (cycles @ 50Hz)

I2t: V

I2t: 60% V

I

: V

TSM

I

: 60% V

TSM

Issue 3

RRM

≤10V

RRM

≤10V

RRM

1.00E+08

1.00E+07

1.00E+06

s)

2

t (A

2

Maximum I

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 10 of 11 October, 2014

Wespack Phase Control Thyristor Types N2367MK200 to N2367MK220

Outline Drawing & Ordering Information

101A353

ORDERING INFORMATION (Please quote 10 digit code as below)

N2367 MK

Fixed

Type Code

Order code: N2367MK220 – 2200V V

IXYS Semiconductor GmbH

Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627

marcom@ixys.de

E-mail:

IXYS Corporation

3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670

sales@ixys.net

E-mail:

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

outline code

, V

DRM

RRM

Fixed

, 14mm clamp height capsule.

www.ixysuk.com

www.ixys.com



Voltage code

/100

V

DRM

20-22

0

Fixed turn-off

time code

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail:

IXYS UK Westcode Ltd

Tel: +44 (0)1249 444524

Fax: +44 (0)1249 659448

sales@ixysuk.com

E-mail:

IXYS Long Beach

IXYS Long Beach, Inc

2500 Mira Mar Ave, Long Beach

CA 90815

Tel: +1 (562) 296 6584

Fax: +1 (562) 296 6585

service@ixyslongbeach.com

Data Sheet. Types N2367MK200 to N2367MK220 Issue 3 Page 11 of 11 October, 2014

Datasheet N2367MK200, N2367MK220 Datasheet (Westcode Semiconductors)

Specifications and Main Features

Frequently Asked Questions

User Manual

Absolute Maximum Ratings

Characteristics

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

8.3 D.C. Thermal Impedance Calculation

9.0 Reverse recovery ratings (i) Q

Curves

Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance

Figure 3 – Gate Characteristics – Trigger limits

Figure 4 – Gate Characteristics – Power Curves

Figure 6 – Recovered Charge, Qra (50% chord)

Figure 17 – Maximum surge and I2t Ratings

Outline Drawing & Ordering Information