Datasheet N1718NC120, N1718NC200 Datasheet (Westcode Semiconductors)

Phase Control Thyristor

Types N1718NC120 to N1718NC200

Absolute Maximum Ratings

Date:- 2nd April, 2014

Data Sheet Issue:- 4

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200-2000 V Non-repetitive peak off-state voltage, (note 1) 1200-2000 V Repetitive peak reverse voltage, (note 1) 1200-2000 V Non-repetitive peak reverse voltage, (note 1) 1300-2100 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)M

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

Maximum average on-state current, T Maximum average on-state current. T Maximum average on-state current. T Nominal RMS on-state current, T D.C. on-state current, T

=25°C, (note 4)

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V

=55°C, (note 2)

sink

=85°C, (note 2)

sink

=85°C, (note 3)

sink

=25°C, (note 2)

sink

, (note 5) 27.2 kA

RRM

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

, (note 5) 3.70×10

RRM

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 500 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

1718 A 1143 A

663 A 3450 A 2852 A

29.9 kA

4.47×10

6

A2s A2s

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 1 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

T0

r

T

Maximum peak on-state voltage

Threshold voltage - - 0.979 V

Slope resistance - - 0.169 (dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V I I V I V I t t Q Q I t

t

R

DRM

RRM

GT

GD

H

gd

gt

rr

ra

rr

q

thJK

Peak off-state current - - 100 Rated V

Peak reverse current - - 100 Rated V

Gate trigger voltage - - 3.0 V

Gate trigger current - - 300

Gate non-trigger voltage

Holding current - - 1000 Tj=25°C mA

Gate-controlled turn-on delay time - 0.6 1.5 µs

Turn-on time - 1.1 2.5

Recovered charge - 2300 2550 µC

Recovered charge, 50% Chord - 1500 - µC

Reverse recovery current - 123 - A

Reverse recovery time - 24 -

Turn-off time

Thermal resistance, junction to heatsink

- - 1.41 ITM=2550A

- - 1.85 I

=5150A

TM

V

mΩ

=25°C VD=10V, IT=3A

T

j

- - 0.25 Rated V

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V

r

, linear ramp, gate o/c

DRM

RRM

DRM

, IT=1500A, di/dt=10A/µs,

DRM

V/µs

mA mA

mA

V

µs

=1000A, tp=1000µs, di/dt=10A/µs,

I

- 100 -

- 170 -

TM

V

=50V, Vdr=80%V

r

=1000A, tp=1000µs, di/dt=10A/µs,

I

TM

V

=50V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

- - 0.024 Double side cooled K/W

- - 0.048 Single side cooled K/W F Mounting force 19 - 26 kN W

t

Weight - 510 - g

Notes:-

1) Unless otherwise indicated T

2)

For other clamp forces please consult factory.

=125°C.

j

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 2 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

D

DC V

R

12 1200 1300 810 14 1400 1500 930 16 1600 1700 1040 18 1800 1900 1150 20 2000 2100 1270

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 3 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

∆

(

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

2

4

I

=

AV

Where V

R

th

=0.979V, rT=0.169mΩ,

T0

= Supplementary thermal impedance, see table below and

00

2

rff

⋅⋅

T

WrffVV

⋅⋅⋅++−

AVTTT

and:

W

AV

=

R

T

th

max

−=∆

TTT

Kj

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.0293 0.0285 0.0278 0.0271 0.0261 0.0249 0.024

Square wave Single Side Cooled 0.0534 0.053 0.0524 0.0518 0.0509 0.0497 0.048

Sine wave Double Side Cooled 0.0286 0.0276 0.0269 0.0263 0.0248

Sine wave Single Side Cooled 0.0531 0.0523 0.0517 0.0511 0.0497

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

8.2 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V to that plotted.

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 4 of 11 April, 2014

agree with the true device characteristic over a current range, which is limited

T

25°C Coefficients 125°C Coefficients

A 0.7637538 A 0.5497078 B 0.03561525 B 0.067655 C 1.11447 ×10 D 1.837515 ×10

-4

-3

C 1.6257 ×10 D -1.682 ×10

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

-3

Phase Control Thyristor Types N1718NC120 to N1718NC200

8.3 D.C. Thermal Impedance Calculation

=

np

⎛ ⎜

∑

=

p

1

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds. r

= Thermal resistance at time t.

t

r

= Amplitude of pth term.

p

= Time Constant of rth term.

τ

p

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

9.0 Reverse recovery ratings (i) Q

0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10

p

is based on 50% Irm chord as shown in Fig. 1

ra

1 2 3 4 5

0.01249139 6.316833×10

0.8840810 0.1215195 0.03400152 6.742908×10

1 2 3 4 5 6

6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10

-3

D.C. Single Side Cooled

1

pt

⎜ ⎝

1.850855×10

−

t

⎞

τ

p

⎟

err

−⋅= ⎟

⎠

-3

1.922045×10

-3

6.135330×10

1.326292×10

-4

-3

Fig. 1

is based on a 150µs integration time i.e.

(ii) Q

rr

=

(iii)

FactorK =

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 5 of 11 April, 2014

t

1

t

2

150

s

µ

dtiQ

.

rrrr

∫

0

Phase Control Thyristor Types N1718NC120 to N1718NC200

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

N1718NC120-200

Issue 4

0.1 N1718NC120-200

Issue 4

SSC 0.048K/W

Tj = 25°C

(A)

TM

1000

Instantaneous On-state current - I

100

0.5 1 1.5 2 2.5

Instantaneous On-state voltage - V

Tj = 125°C

(V)

TM

Figure 3 - Gate characteristics - Trigger limits

6

N1718NC120-200

Issue 4

Tj=25°C

DSC 0.024K/W

0.01

0.001

Thermal impedance (K/W)

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Figure 4 - Gate characteristics - Power curves

20

N1718NC120-200

Issue 4

Tj=25°C

18

Time (s)

(V)

GT

5

Max VG dc

4

IGT, V

GT

3

(V)

GT

16

Max VG dc

14

12

10

8

Gate Trigger Voltage - V

2

25°C

-10°C

125°C

1

IGD, V

GD

0

00.20.40.60.8

Gate Trigger Curre n t - I

-40°C

GT

(A)

Min VG dc

1

Gate Trigger Voltage - V

6

PG 4W dc

4

2

0

02468

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

10

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 6 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Figure 5 - Total recovered charge, Q

10000

N1718NC120-200

Issue 4

Tj=125°C

(µC)

rr

Recovered charge - Q

1000

1 10 100 1000

di/dt (A/µs)

rr

4000A 2000A 1000A

500A

Figure 6 - Recovered charge, Qra (50% chord)

10000

N1718NC120-200

Issue 4

Tj=125°C

4000A 2000A 1000A 500A

(µC)

ra

1000

Recovered charge, 50% chord - Q

100

1 10 100 1000

di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I

10000

N1718NC120-200

Issue 4

Tj=125°C

1000

(A)

rm

100

Reverse recovery current - I

10

1 10 100 1000

di/dt (A/µs)

rm

4000A 2000A 1000A 500A

Figure 8 - Maximum recovery time, t

100

(µs)

rr

10

Reverse recovery time, 50% chord - t

1

1 10 100 1000

di/dt (A/µs)

(50% chord)

rr

N1718NC120-200

Issue 4

Tj=125°C

4000A 2000A 1000A 500A

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 7 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

Maximum forward dissipation (W)

4500

4000

3500

3000

2500

2000

1500

1000

500

30°

60°

N1718NC120-200

Issue 4

120°

90°

180°

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

140

120

100

80

N1718NC120-200

Issue 4

60

40

Maximum permissable heatsink temperature (°C)

20

30° 60° 90° 120° 180°

0

0 500 1000 1500 2000 2500

Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

4500

N1718NC120-200

Maximum forward dissipation (W)

4000

3500

3000

2500

2000

1500

1000

500

Issue 4

30°

60°

90°

120°

180°

d.c.

270°

0

0 500 1000 1500 2000 2500

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

140

120

100

Mean forward current (A) (Whole cycle averaged)

N1718NC120-200

80

60

40

Maximum permissible heatsink temperature (°C)

20

30° 60° 90° 120° 180°

Issue 4

270°

d.c.

0

0 500 1000 1500 2000 2500 3000

Mean Forward Current (A) (Whole Cycle Averaged)

0

0 500 1000 1500 2000 2500 3000

Mean Forward Current (A) (Whole Cycle Averaged)

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 8 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

Maximum forward dissipation (W)

2500

2000

1500

1000

500

30°

N1718NC120-200

Issue 4

90°

60°

120°

180°

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

140

120

100

80

N1718NC120-200

60

40

Maximum permissable heatsink temperature (°C)

20

30° 60° 90° 120° 180°

Issue 4

0

0 200 400 600 800 1000 1200 1400

Mean forward current (A) (Whole cycle averaged)

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

2500

2000

1500

1000

Maximum forward dissipation (W)

500

N1718NC120-200

Issue 4

d.c. 270° 180° 120° 90° 60° 30°

0

0 200 400 600 800 1000 1200 1400

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

140

120

100

Mean forward current (A) (Whole cycle averaged)

80

60

40

Maximum permissible heatsink temperature (°C)

20

30° 60° 90° 120° 180° d.c.270°

N1718NC120-200

Issue 4

0

0 500 1000 1500 2000

Mean Forward Current (A) (Whole Cycle Averaged)

0

0 500 1000 1500 2000

Mean Forward Current (A) (Whole Cycle Averaged)

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 9 of 11 April, 2014

Phase Control Thyristor Types N1718NC120 to N1718NC200

Figure 17 - Maximum surge and I

100000

10000

Total peak half sine surge current (A)

1000

135101 5 10 50 100

2

t Ratings

I2t: V

I2t: 60% V

I

TSM

I

TSM

RRM

: V

RRM

: 60% V

≤10V

RRM

≤

10V

RRM

Tj (initial) = 125°C

N1718NC120-200

Issue 4

1.00E+08

1.00E+07

1.00E+06

s)

2

t (A

2

Maximum I

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 10 of 11 April, 2014

Outline Drawing & Ordering Information

Phase Control Thyristor Types N1718NC120 to N1718NC200

101A223

ORDERING INFORMATION (Please quote 10 digit code as below)

N1718 NC

Fixed

Type Code

Order code: N1718NC200 – 2000V V

IXYS Semiconductor GmbH

Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627

marcom@ixys.de

E-mail:

IXYS Corporation

1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670

sales@ixys.net

E-mail:

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

outline code

, V

DRM

Fixed

, 26.6mm clamp height capsule.

RRM

www.ixysuk.com

www.ixys.com

 

Voltage code

/100

V

DRM

12-20

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail:

IXYS UK Westcode Ltd

Tel: +44 (0)1249 444524

Fax: +44 (0)1249 659448

E-mail:

2500 Mira Mar Ave, Long Beach

service@ixyslongbeach.com

Fixed turn-off

time code

sales@ixysuk.com

IXYS Long Beach

IXYS Long Beach, Inc

CA 90815

Tel: +1 (562) 296 6584

Fax: +1 (562) 296 6585

Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 11 of 11 April, 2014

Datasheet N1718NC120, N1718NC200 Datasheet (Westcode Semiconductors)

Specifications and Main Features

Frequently Asked Questions

User Manual

Absolute Maximum Ratings

Characteristics

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

8.0 Computer Modelling Parameters

8.1 Device Dissipation Calculations

8.3 D.C. Thermal Impedance Calculation

9.0 Reverse recovery ratings (i) Q

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

Figure 6 - Recovered charge, Qra (50% chord)

Outline Drawing & Ordering Information